JPS63236797A - Orientating perovskite-type compound laminated film - Google Patents
Orientating perovskite-type compound laminated filmInfo
- Publication number
- JPS63236797A JPS63236797A JP62072432A JP7243287A JPS63236797A JP S63236797 A JPS63236797 A JP S63236797A JP 62072432 A JP62072432 A JP 62072432A JP 7243287 A JP7243287 A JP 7243287A JP S63236797 A JPS63236797 A JP S63236797A
- Authority
- JP
- Japan
- Prior art keywords
- film
- perovskite
- orientation
- substrate
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 23
- 239000010408 film Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000010409 thin film Substances 0.000 claims abstract description 26
- 239000013078 crystal Substances 0.000 claims abstract description 19
- 239000000203 mixture Substances 0.000 claims abstract description 4
- 229910052788 barium Inorganic materials 0.000 claims abstract description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 3
- 239000000126 substance Substances 0.000 claims abstract description 3
- 229910052742 iron Inorganic materials 0.000 claims abstract 2
- 229910052745 lead Inorganic materials 0.000 claims abstract 2
- 229910052748 manganese Inorganic materials 0.000 claims abstract 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 239000005001 laminate film Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 abstract description 9
- 238000001514 detection method Methods 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000001552 radio frequency sputter deposition Methods 0.000 description 3
- 229910003781 PbTiO3 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 101150105710 CRF1 gene Proteins 0.000 description 1
- -1 TiOs or PLZT+BaTi0° Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は電子デバイス分野に用いられる電子材料に関す
るものであシ、特に、結晶軸に配向性を有する配向性ペ
ロブスカイト型化合物積層膜に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an electronic material used in the field of electronic devices, and in particular to a laminated film of an oriented perovskite-type compound having crystal axis orientation.
従来の技術
ペロブスカイト型化合物の薄膜の研究は、ＰｂＴｉＯ３
系薄膜の焦電形熱検出素子や、ＰＬＺＴ系薄膜の光変調
素子や、ＢａＴｉＯｓ系薄膜のコンデンサ素子に代表さ
れる様に近年活発に行なわれている。これらの薄膜素子
ではすぐれた特性を得るために薄膜の結晶軸を配向させ
る事が必要であシ、そのためにＭｇＯなどの単結晶を基
板にし、その上にペロブスカイト型化合物をエピタキシ
ャル成長させる手法が用いられている。Conventional technology The study of thin films of perovskite-type compounds is based on PbTiO3
In recent years, this technology has been actively used, as typified by pyroelectric heat detection elements using thin films based on pyroelectric elements, light modulation elements using thin films based on PLZT, and capacitor elements using thin films based on BaTiOs. In order to obtain excellent properties in these thin film devices, it is necessary to orient the crystal axes of the thin film, and for this purpose, a method is used in which a single crystal such as MgO is used as a substrate and a perovskite compound is epitaxially grown on it. ing.
発明が解決しようとする問題点
しかしながら、この様に単結晶基板上にスパッタリング
法などで生成されたペロブスカイト型化金物薄膜はすぐ
れた配向性を示すが、たとえば、焦電形熱検出素子の様
に信号検出用の電極をＭｇＯとＰｂＴｉＯ３薄膜の間に
設ける事が必要であシ、このためにＰｂＴ ｉ Ｏｓ薄
膜の配向性が低下し、また、単結晶基板を用いるために
高価になるという問題があった。Problems to be Solved by the Invention However, although the perovskite-type metal thin film produced by sputtering or the like on a single crystal substrate exhibits excellent orientation, it is It is necessary to provide an electrode for signal detection between the MgO and PbTiO3 thin films, which reduces the orientation of the PbTiOs thin film, and also increases the cost due to the use of a single crystal substrate. there were.
本発明の目的は、これらの問題を解決するもので、配向
性のすぐれたペロブスカイト型化合物積層膜を提供する
事にある。An object of the present invention is to solve these problems and provide a perovskite compound multilayer film with excellent orientation.
問題点を解決するだめの手段
本発明による配向性ペロブスカイト型化合物積層膜は上
記目的を達成するもので、その技術的手段は、結晶軸に
配向性を有さないガラスなどの基板上に、結晶軸が配向
したペロブスカイト構造を有する化学式Ｌａ１Ｘ 、５
ｒＸＢａ’、Ｍｅ０３ｑ、で、０≦Ｘ≦０．８、ｏ＜ｙ
＜ｏ、ｓ、０．１りｘ＋ｙ＜０．８．０くδり０．５で
あり、ＭｅがＭｎＸＦｅＸＣｏのうちから選ばれた少な
くとも１種である組成範囲にある導電性薄膜を設け、前
記導電性の配向膜上にペロブスカイト型化合物ＡＢＯ３
膜を成長せしめたことにある。Means to Solve the Problems The oriented perovskite compound laminated film according to the present invention achieves the above object. Chemical formula La1X, 5 with perovskite structure with oriented axes
rXBa', Me03q, 0≦X≦0.8, o<y
< o, s, 0.1 x + y < 0.8.0 δ = 0.5, and Me is at least one selected from MnXFeXCo. Perovskite compound ABO3 on the conductive alignment film
The reason lies in the growth of the film.
作用
本発明は上記構成からなシ、結晶軸に配向性のない基板
上にも、導電性薄膜を介して極めて配向性の良いペロブ
スカイト型化合物膜を得ることができる。Operation The present invention has the above-mentioned structure, and a perovskite compound film with extremely good orientation can be obtained via a conductive thin film even on a substrate with no crystal axis orientation.
導電性薄膜はペロブスカイト構造を有し、その結晶軸の
配向方向としては＜１００＞もしくは＜１１０＞方向が
好ましい。The conductive thin film has a perovskite structure, and the orientation direction of its crystal axis is preferably <100> or <110> direction.
ペロブスカイト化合物膜としては、Ｌａ、、□５ｒｘＢ
ａ、Ｍｅ０３−δとの格子定数のミスフィツトが±１５
％以内のものが望ましく、特に、薄膜素子としての機能
を考慮した場合、ペロブスカイト型化合物ＡＢＯ３のＡ
サイトにｐｂとＢａとＬａの少なくとも１種、Ｂサイト
にＴｉとＺｒの少なくとも１種を含んだ強誘電体が望ま
しい。As a perovskite compound film, La, , □5rxB
a, the lattice constant misfit with Me03-δ is ±15
% of the perovskite compound ABO3 is desirable, especially when considering the function as a thin film element.
A ferroelectric material containing at least one of pb, Ba, and La at the site and at least one of Ti and Zr at the B site is desirable.
また本発明で使用されるＬａ１Ｘ−７”ｒＸＢａｙＭｅ
Ｏ３−Ｊ導電性薄膜の第１の特徴は、その配向性の良さ
である。一般に、配向性の良好なペロブスカイト型化合
物薄膜を得るには、基板に製膜したい材料と格子定数の
近い単結晶が使用される。たとえば正方晶のペロブスカ
イトＰｂＴｉ０． （ａ ＝ ３．９０４λ、Ｃ単結
晶基板上にスパッタリング法で作成した場合、Ｃ軸がＭ
ｇＯ基板に垂直に並んだ配向膜がエピタキシャル成長す
る事が知られている。この場合の格子定数のミスフィツ
トは７．１％である。これに対し、Ｌａ１ｚ 、５ｒＸ
Ｂａ、ＭｅＯ３，５では基板として結晶軸に配向性のな
い非晶質の石英ガラスや多結晶基板を用いた場合にも極
めて配向性の良い薄膜が得られ、これを基板としてＰｂ
ＴｉＯｓやＰＬＺＴ＋ＢａＴｉ０゜などのペロブスカイ
ト化合物をエピタキシャル成長せしめる事により、配向
性がすぐれ安価な薄膜を得る事が可能となる。Also, La1X-7"rXBayMe used in the present invention
The first feature of the O3-J conductive thin film is its good orientation. Generally, in order to obtain a perovskite compound thin film with good orientation, a single crystal having a lattice constant similar to that of the material desired to be formed on the substrate is used. For example, the tetragonal perovskite PbTi0. (a = 3.904λ, when created by sputtering on a C single crystal substrate, the C axis is M
It is known that alignment films aligned perpendicularly to a gO substrate are epitaxially grown. The lattice constant misfit in this case is 7.1%. On the other hand, La1z, 5rX
For Ba, MeO3,5, a thin film with extremely good orientation can be obtained even when an amorphous quartz glass or polycrystalline substrate with no crystal axis orientation is used as a substrate, and this can be used as a substrate for Pb.
By epitaxially growing a perovskite compound such as TiOs or PLZT+BaTi0°, it is possible to obtain an inexpensive thin film with excellent orientation.
本発明で使用されるＬａ１ｚ 、ＳｒｚＢａｙＭｅ０３
７導電性薄膜の第２の特徴は、その固有抵抗値ρが低く
、それ自身が電極として作用する点にある。たとえば、
Ｌａ０１５ Ｓ ｒＯ，５Ｃｏ Ｏｓではρ〜５Ｘ１０
０−ｆｆｉが得られる。ρはＸＸｙの値やＭｅの種類で
大巾に変化するが実用的にはρ〈１０Ω・ｍが望ましく
、０≦Ｘ≦０．８．０くｙく０゜５．０．１ りｘ ＋
ｙ ＜ ０．８．０くδり０．５でＭｅがＭｎＸＦｅ
ＸＣｏのうちから選ばれた少なくとも１種である組成で
ある事が望ましい。δ（酸素欠損量）の制御はスパッタ
リング時の雰囲気、基板温度で制御する事が可能である
。La1z used in the present invention, SrzBayMe03
7 The second characteristic of the conductive thin film is that its specific resistance value ρ is low and that it itself acts as an electrode. for example,
For La015S rO,5Co Os, ρ~5X10
0-ffi is obtained. ρ varies widely depending on the value of XXy and the type of Me, but practically it is desirable that ρ〈10Ω・m, and 0≦X≦0.8.0×0゜5.0.1 ri×+
y < 0.8.0 δ 0.5 and Me is MnXFe
It is desirable that the composition be at least one selected from XCo. δ (oxygen vacancy amount) can be controlled by the atmosphere during sputtering and the substrate temperature.
Ｌａｔ−Ｘ−ｙ Ｓ ｒｘＢ ａ、 Ｃｏ Ｏ３ｑは立
方格子もしくは立方格子かられずかにずれた菱面体格子
で形成される。Lat-X-y S rxB a, Co O3q is formed in a cubic lattice or a rhombohedral lattice slightly shifted from a cubic lattice.
たとえば、Ｌａ、 Ｓ ｒｏ、９ Ｃｏ０．２Ｆｅｏ、
ｇはａ＝３．８６１Ａを有する立方晶であり ＰｂＴｉ
Ｏｓのａ軸（３，９０４Ａ）やＢａＴｉＯ３のａ軸（３
，９８９Ａ）に極めて近くミスフィツトは数％以内であ
る。Ｌａｔ、ｙｓｒｘＢａｙＭｅ０３Ｊ上に製膜される
ペロブスカイト化合物としては、ＰｂＴｉ０ａやＢａＴ
ｉ０．の他に（Ｐｂ、、Ｌａｘ） （Ｔｉ、−ｙＺｒ
ｙ ） Ｏｓ （Ｐ ＬＺ Ｔ ）やＢａＭｏ ０３
、ＢａＺｒ Ｏｓ 、ＳｒＭｏＯ３、ＬａＡ４？Ｏ１、
ＬａＴｉ０ａ、５ｒＴｉＯ，などが挙げられるが、実用
的には強誘電性を示す前３者が望ましい。For example, La, S ro, 9 Co0.2Feo,
g is a cubic crystal with a=3.861A, PbTi
The a-axis of Os (3,904A) and the a-axis of BaTiO3 (3
, 989A), and the misfit is within a few percent. Perovskite compounds formed on Lat, ysrxBayMe03J include PbTi0a and BaT.
i0. In addition to (Pb, Lax) (Ti, -yZr
y) Os (PLZ T) and BaMo 03
, BaZrOs, SrMoO3, LaA4? O1,
Examples include LaTiOa, 5rTiO, etc., but the first three exhibiting ferroelectricity are practically preferred.
実施例 以下に本発明の実施例を詳細に説明する。Example Examples of the present invention will be described in detail below.
Ｌａ、、、 Ｓ ｒｘＢａｙＭｅ Ｏ，５薄膜および”
１７）ｌ”ｘＢａｙＭｅ０３−δ上にエピタキシャル成
長せしめられるペロブスカイト型化合物薄膜はいずれも
スバノタリング法で作成された。La,..., S rxBayMe O,5 thin film and''
17) The perovskite compound thin films epitaxially grown on l''xBayMe03-δ were all produced by the Subanotaling method.
第１図に石英ガラス基板上に製膜したＬａｏ、５Ｓｒｏ
、５Ｃｏ０３−δのＸ線回折図形を示す。（イ）はＲＦ
スパッタリング法によるものであシ、スパッタガスには
混合比３：１のアルゴンと酸素との混合ガスを用い、全
圧を８ Ｘ １０ ’−２Ｘ １０２Ｔｏｒｒ ％基板
温度２５０ ｒ、入力電力３００Ｗ、ターゲット直径１
２．５ｃｒｆ１であった。Figure 1 shows Lao and 5Sro films formed on a quartz glass substrate.
, shows the X-ray diffraction pattern of 5Co03-δ. (b) is RF
The sputtering method was performed using a mixed gas of argon and oxygen at a mixing ratio of 3:1, with a total pressure of 8 x 10'-2 x 102 Torr, a substrate temperature of 250 r, an input power of 300 W, and a target diameter. 1
It was 2.5 crf1.
第２図にターゲットに用いたＬａ６．５ Ｓｒ、５Ｃｏ
ｏｓの粉末Ｘ線回折図形を示すが、第１図（イ）と第２
図を比較すると第１図（イ）のスパッタ膜では＜１００
＞配向している事が認められる。第１図（ロ）は第１図
（ｒ）とはソ同様の条件でＲＦスパッタした場合である
が、この場合には＜１１０＞配向している事が認められ
る。この様にスパッタ条件によって配向方向が変化する
例はこれまで報告された事がないが、以下の様な傾向が
認められた。すなわち、基板温度２００ＣにしてＲＦパ
ワーを１００Ｗ、 ２００Ｗ、 ３００Ｗ。Figure 2 shows La6.5 Sr and 5Co used as targets.
The powder X-ray diffraction pattern of os is shown in Figure 1 (a) and Figure 2.
Comparing the figures, in the sputtered film in Figure 1 (a), <100
＞Orientation is observed. FIG. 1(B) shows the case of RF sputtering under the same conditions as FIG. 1(R), and in this case, <110> orientation is observed. Although an example in which the orientation direction changes depending on sputtering conditions in this way has never been reported, the following tendency was observed. That is, the substrate temperature is 200C and the RF power is 100W, 200W, and 300W.
４００ Ｗと変化させると膜は非晶質から＜１１０＞配
向膜、４１０＞と＜１００＞配向膜の混ざった膜、＜１
００＞配向膜と変化する０人力電力以外に基板温度、ガ
ス圧などによっても配向膜のでき方は変化するが基板温
度を高くシ、ガス圧を低くしすぎるとδ〉０．５となシ
ペロブスカイト以外の相が生成される場合があるので基
板温度は７００Ｃ以下、ガス圧はＩＣ３−１０″′ＴＯ
ｒｒＯ間が望ましい。When the power is changed to 400 W, the film changes from amorphous to a <110> oriented film, a mixed film of 410> and <100> oriented films, and a <1
00>Alignment film and 0 changes.In addition to human power, the formation of the alignment film also changes depending on the substrate temperature, gas pressure, etc., but if the substrate temperature is too high and the gas pressure is too low, δ>0.5. Since phases other than perovskite may be generated, the substrate temperature should be 700C or less, and the gas pressure should be IC3-10''TO.
A range between rr0 and 0 is desirable.
Ｌａ１−ＸｙＳ ｒＸＢ ａ、Ｍｅ ０３６で、ｘ％ｙ
の値やＭｅの種類をかえてもＬａｏ、ｓ Ｓｒｏ、ｓｃ
ｏ ０３−ａの場合とはソ同様の結果が得られ、また、
基板として石英ガラス以外にＭ２Ｏ３焼結体、ｚｒＯ２
焼結体、届、Ａｕなどの金属基板を用いる事も可能であ
る。La1-XyS rXB a, Me 036, x%y
Lao, s Sro, sc even if you change the value of or type of Me
o The same results as in the case of 03-a were obtained, and
In addition to quartz glass, M2O3 sintered body, zrO2 can be used as a substrate.
It is also possible to use a metal substrate such as a sintered body, aluminum, or Au.
この様にして得られた配向膜上に種々のペロブスカイト
膜をエピタキシャル成長させた具体的な実施例を以下に
述べる。Specific examples in which various perovskite films were epitaxially grown on the alignment film thus obtained will be described below.
〈実施例１〉
＜１００＞配向したＬａｏ、、Ｓｒｏ、５Ｃ００Ｊ膜上
にｐｂｏ、５Ｌａｏ、、’ｒｉｏ３薄膜をＲＦスバツタ
リ／グ法で作製した。ターゲットには頷モル％ＰｂＯを
過剰に加えた粉末を用いた。基板温度６００Ｃ，スパッ
タガスは混合比９：１のアルゴンと酸素の混合ガスを用
い、全圧は２×１σ２Ｔｏ ｒ ｒであった０得られた
膜のＸ線回折図形では（１００）面と（００１）面から
の反射のみが観察された。（１００）面と（００１）面
の反射強度をそれぞれＩゆ、■。。１とし配向度Ａを
Ａ＝ＩＯｏ１／（工。。１＋１１ｏｏ）で定義すると、
Ａ＝９６％であった。<Example 1> A pbo, 5Lao, and 'rio3 thin film was fabricated on a <100> oriented Lao, Sro, and 5C00J film by an RF sputtering/gating method. A powder to which an excess of PbO was added in a molar % was used as a target. The substrate temperature was 600C, the sputtering gas was a mixture of argon and oxygen at a mixing ratio of 9:1, and the total pressure was 2×1σ2Torr. 001) only reflection from the surface was observed. The reflection intensities of the (100) plane and (001) plane are Iyu and ■, respectively. . 1 and the degree of orientation A is defined as A=IOo1/(Eng..1+11oo),
A=96%.
なお、比較のためにＭｇＯ単結晶上に＜１００＞配向し
たｐｔ膜を設け、これを基板としてＰｂＯ０９Ｌａ０．
ｌＴｉＯ３膜を生成したところＡ＝７５％であった。For comparison, a <100> oriented PT film was provided on an MgO single crystal, and this was used as a substrate for PbO09La0.
When a lTiO3 film was produced, A=75%.
〈実施例２〉
＜Ｚｏｏ＞配向したＬａ０１７８ ｒｏ、３ Ｍｎｏ、
５ＦｅＯ，５ｏ３−δ膜上にＰｂ０．８３ＬａＯ６１３
Ｔ’０．８６ＺｒＯ１１４０３薄膜を実施例１と同じ条
件で作成した。得られた膜はＡ＝９３％を示した。<Example 2><Zoo> oriented La0178 ro, 3 Mno,
Pb0.83LaO613 on 5FeO,5o3-δ film
A T'0.86 ZrO11403 thin film was created under the same conditions as in Example 1. The obtained film showed A=93%.
〈実施例３〉
＜１１０＞配向したＬａｏ、５ Ｓ ｒｏ、ｓ Ｃｏ
０３−Ｊ膜上にＢａ０．５Ｔ ｉ Ｏｓ薄膜をＲＦスパ
ッタリング法で作成した。<Example 3><110> oriented Lao, 5 S ro, s Co
A Ba0.5T i Os thin film was formed on the 03-J film by RF sputtering.
基板温度６５０１Ｚ’％スパッタガスは混合比３：１の
アルゴンと酸素の混合ガスを用い、全圧は５ｘ１０Ｔｏ
ｒｒであった。得られた膜のＸ線回折図形ははソ完全に
（１１０）面からの反射のみを示した。Substrate temperature: 6501Z'% Sputtering gas is a mixed gas of argon and oxygen with a mixing ratio of 3:1, and the total pressure is 5x10To
It was rr. The X-ray diffraction pattern of the obtained film completely showed only reflection from the (110) plane.
発明の効果
本発明による配向性ペロブスカイト型化合物積層膜は、
非配向性基板上に設けられた配向性のＬａ１．、５ｒｘ
Ｂａ、Ｍｅ ０３−Ｊ膜上にペロブスカイト型化合物膜
を成長せしめられるため、極めて配向性にすぐれ、また
、高価な単結晶基板を用いないために高性能で安価な圧
電素子、焦電形熱検出素子、あるいは光変調素子等に応
用する事ができる。Effects of the Invention The oriented perovskite compound multilayer film according to the present invention is as follows:
Oriented La1. provided on a non-oriented substrate. ,5rx
Since a perovskite compound film can be grown on the Ba, Me 03-J film, it has extremely good orientation, and because it does not use an expensive single crystal substrate, it can be used as a high-performance and inexpensive piezoelectric element or pyroelectric thermal detection device. It can be applied to elements, light modulation elements, etc.
第１図は本発明の一実施例におけるＬａＱ５ＳｒＯ，５
ＣＯＯ３−Ｊのスパッタ膜のＸ線回折図形を示す図、第
２図はＬａ００ＳＳｒＯ０５ＣＯＯ３−Ｊの粉末のＸ線
回折図形を示す図である。Figure 1 shows LaQ5SrO,5 in one embodiment of the present invention.
FIG. 2 is a diagram showing the X-ray diffraction pattern of the sputtered film of COO3-J, and FIG. 2 is a diagram showing the X-ray diffraction pattern of the powder of La00SSrO05COO3-J.
Claims (1)
した化学式Ｌａ＿１＿−＿ｘ＿−＿ｙＳｒ＿ｘＢａ＿ｙ
ＭｅＯ＿３＿−＿δで、０≦ｘ≦０．８、０≦ｙ≦０．
５、０．１≦ｘ＋ｙ≦０．８、０≦δ≦０．５であり、
ＭｅがＭｎ、Ｆｅ、Ｃｏのうちから選ばれた少なくとも
１種である組成範囲にある導電性薄膜を介して、ペロブ
スカイト型化合物ＡＢＯ＿３膜を設けたことを特徴とす
る配向性ペロブスカイト型化合物積層膜。 ２）Ｌａ＿１＿−＿ｘ＿−＿ｙＢａ＿ｙＭｅＯ＿３＿−
＿δの結晶軸配向方向が＜１００＞もしくは＜１１０＞
であることを特徴とする特許請求の範囲第１項記載の配
向性ペロブスカイト型化合物積層膜。 ３）ペロブスカイト型化合物ＡＢＯ＿３膜がＡサイトに
ＰｂとＢａとＬａの少なくとも１種、ＢサイトにＴｉと
Ｚｒの少なくとも１種を含んだことを特徴とする特許請
求の範囲第１項記載の配向性ペロブスカイト型化合物積
層膜。[Claims] 1) Chemical formula La_1_-_x_-_ySr_xBa_y with crystal axes oriented on a substrate without crystal axis orientation.
MeO_3_−_δ, 0≦x≦0.8, 0≦y≦0.
5, 0.1≦x+y≦0.8, 0≦δ≦0.5,
An oriented perovskite compound laminated film characterized in that a perovskite compound ABO_3 film is provided via a conductive thin film having a composition in which Me is at least one selected from Mn, Fe, and Co. 2) La_1_-_x_-_yBa_yMeO_3_-
The crystal axis orientation direction of _δ is <100> or <110>
The oriented perovskite compound laminate film according to claim 1, which is characterized in that: 3) Orientation according to claim 1, wherein the perovskite compound ABO_3 film contains at least one of Pb, Ba, and La at the A site and at least one of Ti and Zr at the B site. Perovskite compound multilayer film.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62072432A JP2583882B2 (en) | 1987-03-26 | 1987-03-26 | Oriented perovskite-type compound laminated film |
| US07/173,748 US5077270A (en) | 1987-03-26 | 1988-03-25 | Elements comprising a film of a perovskite compound whose crystallographic axes are oriented and a method of making such elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62072432A JP2583882B2 (en) | 1987-03-26 | 1987-03-26 | Oriented perovskite-type compound laminated film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63236797A true JPS63236797A (en) | 1988-10-03 |
| JP2583882B2 JP2583882B2 (en) | 1997-02-19 |
Family
ID=13489131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62072432A Expired - Fee Related JP2583882B2 (en) | 1987-03-26 | 1987-03-26 | Oriented perovskite-type compound laminated film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2583882B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6988300B2 (en) * | 2000-02-01 | 2006-01-24 | Murata Manufacturing Co., Ltd. | Method of producing a piezoelectric element |
| US7423308B2 (en) | 2001-11-01 | 2008-09-09 | Fujitsu Limited | Ferroelectric capacitor |
| JP2010132972A (en) * | 2008-12-04 | 2010-06-17 | Noritake Co Ltd | Oxygen-ion conductive ceramic film material and method of manufacturing the same |
| CN103897613A (en) * | 2014-04-18 | 2014-07-02 | 太仓泰邦电子科技有限公司 | Piezoelectric and conductive adhesive tape |
-
1987
- 1987-03-26 JP JP62072432A patent/JP2583882B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6988300B2 (en) * | 2000-02-01 | 2006-01-24 | Murata Manufacturing Co., Ltd. | Method of producing a piezoelectric element |
| US7423308B2 (en) | 2001-11-01 | 2008-09-09 | Fujitsu Limited | Ferroelectric capacitor |
| JP2010132972A (en) * | 2008-12-04 | 2010-06-17 | Noritake Co Ltd | Oxygen-ion conductive ceramic film material and method of manufacturing the same |
| CN103897613A (en) * | 2014-04-18 | 2014-07-02 | 太仓泰邦电子科技有限公司 | Piezoelectric and conductive adhesive tape |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2583882B2 (en) | 1997-02-19 |
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