KR100591931B1 - Electric field tunable pb-based pyrochlore dielectric thin films and process for making - Google Patents

Abstract

The present invention relates to a field-variable dielectric thin film having a pyrochlore structure based on Pb and a method of manufacturing the same. The present invention is a solid solution thin film of Pb-X-Nb-O (where X is one element selected from the group consisting of Zn, Ni, Cu, and Mg) -based pyrochlore structure, the electric field when applying an electric field of 1000kV / cm Provided is a dielectric thin film characterized in that the electric field variable rate, which is defined as a percentage of the change in the dielectric constant of the thin film when the electric field is applied to the dielectric constant of the thin film when no application is applied, is about 10 to 43%. According to the present invention, it is possible to provide an electric field variable dielectric thin film having high dielectric constant, low dielectric loss characteristics, high electric field variable rate, and suitable for use as an electric field variable capacitor of a phase converter, a flat panel antenna, a filter, and the like.

Dielectric thin film, Pyroclaw phase, Pb-based dielectric, field variable capacitor, dielectric constant, dielectric loss, field variable rate, profit index

Description

Field-variable P-type pyroclaw dielectric thin film and manufacturing method {ELECTRIC FIELD TUNABLE Pb-BASED PYROCHLORE DIELECTRIC THIN FILMS AND PROCESS FOR MAKING}

1 is a flowchart illustrating a thin film manufacturing process of the present invention.

2A to 2C are X-ray diffraction patterns of Pb ₆ ZnNb ₆ O ₂₂ , Pb ₆ ZnNb ₆ O _22, and Pb ₆ ZnNb ₆ O ₂₂ targets prepared according to the method of the present invention, respectively.

3A to 3D are X-ray diffraction patterns of a thin film in a deposited state and a post-heat treatment PZN thin film according to substrate temperatures, respectively.

4A to 4D are X-ray diffraction patterns of PMN thin films subjected to deposition and post-heat treatment according to substrate temperatures, respectively.

5A and 5B are X-ray diffraction patterns of PNN thin films subjected to deposition and post-heat treatment according to substrate temperatures, respectively.

6 is a diagram schematically illustrating a laminated structure of a thin film sample for measuring dielectric properties of the dielectric thin film of the present invention.

7A to 7C are graphs showing changes in dielectric constants according to deposition states and post-heating temperatures of PZN, PMN, and PNN thin films formed at various substrate temperatures, respectively.

8A to 8C are graphs showing changes in dielectric loss according to deposition states and post-heating temperatures of PZN, PMN, and PNN thin films formed at various substrate temperatures, respectively.

9A to 9C are graphs showing electric field variable rate characteristics of PZN, PMN, and PNN thin films formed at various substrate temperatures, respectively.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric thin film and a method for manufacturing the same, and more particularly, to a field-variable dielectric thin film having a pyrochlore structure based on Pb and a method for manufacturing the same.

The electric field variable characteristic of the dielectric thin film refers to a characteristic in which the capacitance and the dielectric constant change according to the change of the applied electric field, and this characteristic is defined as the ratio of the change of the dielectric constant at the time of application of the electric field to the permittivity without the electric field. can be evaluated by tunability.

Until now, examples of applying the field-variable thin film as a capacitor have been limited to Ba _1-x Sr _x TiO ₃ (hereinafter, referred to as 'BST') thin films of solid solution of BaTiO ₃ and SrTiO ₃ . Curie temperature (Tc) changes according to the composition of the BST thin film, it is known that the composition around x = 0.3 ~ 0.5 where the Curie temperature is near room temperature is suitable as an electric field-variable device. BST thin films generally have an electric field variable rate of 0.5 or more, and use an oxide single crystal substrate as a substrate or exhibit an electric field variable rate of about 0.7 under other special deposition conditions. However, the BST thin film has a problem in that practical application is difficult due to a large dielectric loss exceeding 0.01 despite excellent electric field variable characteristics.

In order to solve this problem, efforts have been made to reduce the dielectric loss of BST thin films. For example, a method such as epitaxial growth of a BST thin film on an oxide single crystal substrate or addition of a cation such as Mg ²⁺ to a BST thin film. Although some methods have reported that the BST thin film having a dielectric loss of less than 0.01 can be produced by this method, it is not a fundamental solution to the high dielectric loss of the BST thin film.

Accordingly, much effort has been devoted to the development of new materials with lower dielectric losses, and a lot of research has been made especially on Bi-Zn-Nb-O based films (hereinafter referred to as 'BZN'). Among them, a BZZN thin film having a (Bi _1.5 Zn _0.5 ) (Zn _0.5 Nb _1.5 ) O ₇ (hereinafter referred to as 'BZZN') composition having a cubic crystal structure has a dielectric constant of 150 and a dielectric loss of 0.005, and has an electric field of about 830 kV / cm. An electric field variable rate of 0.1 is shown. Of course, in case of BZZN thin film, if the applied electric field is increased, the electric field variability is expected to increase slightly.However, the relatively low permittivity and electric field variability characteristics of the BZZN thin film do not replace the existing BST thin film. to be.

Accordingly, there is a demand for the development of a dielectric thin film having a composition having a larger dielectric constant and excellent electric field variable characteristics while maintaining a low dielectric loss.

An object of the present invention is to provide a dielectric thin film having a new composition having a high dielectric constant and a low dielectric loss and having excellent electric field variable characteristics, and a method of manufacturing the same.

In order to achieve the above technical problem, the present invention provides a solid solution thin film of Pb-X-Nb-O (where X is one element selected from the group consisting of Zn, Ni, Cu, and Mg) -based pyrochlore structure. It provides a dielectric thin film, characterized in that the electric field variable rate is defined by the formula of about 10 to 43%.

(Where C ₀ is the capacitance at the field, C _v is the capacitance at 1000 kV / cm)

In the thin film of the present invention, the electric field variable rate is preferably 30 to 43%, the dielectric constant is preferably 100 or more, and the dielectric loss tan δ is 0.01 or less, preferably 0.005, most preferably 0.002 or less. It is preferable that the said thin film of this invention is 4500 kPa or less in thickness.

The present invention also provides a cubic pyrochlore single phase solid solution thin film represented by Pb ₆ X ₁ Nb ₆ O ₂₂ , wherein X is one element selected from the group consisting of Zn, Ni, Cu and Mg.

The solid solution thin film has an electric field variable rate of 10 to 43%, preferably 30, which is defined as a percentage of the dielectric constant of the thin film when the electric field is applied to the dielectric constant of the thin film when no electric field is applied in an electric field application range of 1000 kV / cm. ~ 40%. In addition, the dielectric constant of the thin film is preferably 100 or more, and the dielectric loss tan δ is 0.01, preferably 0.005, most preferably 0.002 or less.

In another aspect, the present invention provides a step of providing a sintered compact target represented by Pb-X-Nb-O, wherein X comprises at least one selected from the group consisting of Zn, Ni, Cu and Mg; Heating the substrate; And sputtering the sintered compact target to form a Pb-X-Nb-O thin film on the substrate. In the above method, the Pb-X-Nb-O thin film is preferably a pyrochlore single phase represented by the compositional formula Pb ₆ X ₁ Nb ₆ O ₂₂ . In addition, the substrate temperature of the substrate heating step in the method is preferably maintained at 350 ~ 600 ℃.

In addition, the Pb-X-Nb-O thin film forming step in the method of the present invention may further comprise a post-heat treatment at a temperature of 500 ℃ or more. At this time, the post-heat treatment step is preferably performed at a temperature of 800 ℃ or less.

In the above-described Pb-X-Nb-O based pyroclaw thin film of the present invention, in addition to Zn, Mg, Cu, and Ni listed as the element X, other divalent metals having similar ionic radii may be used. Anyone skilled in the art will know.

Hereinafter, the present invention will be described in detail by explaining preferred embodiments of the present invention with reference to the drawings.

1 is a flowchart illustrating a thin film manufacturing process of the present invention. Referring to FIG. 1, first, a target is manufactured by a solid phase synthesis method (S110), and a Pb-X-Nb-O thin film is formed on a substrate using the manufactured target (S120). At this time, the substrate is maintained at a temperature of about 300 to 600 ℃. The upper limit of the holding temperature of the substrate depends on the heating conditions of the stuffer device, and may be maintained at a high temperature such as, for example, a sintering temperature suitable for the manufacture of the sputter target, if the sputter device permits. Subsequently, the obtained thin film is post-heated at a temperature of about 500 to 800 ° C. (S130). The post heat treatment is for the crystallization of the obtained thin film when present in an amorphous phase. Hereinafter, the above-described thin film manufacturing process and characteristics of the obtained thin film will be described in more detail with reference to preferred embodiments of the present invention.

Preparation of Sputter Target

PbO, ZnO, MgO, NiO, and Nb ₂ O ₅ with a purity of 99.9% or higher of Kojundo Chemical Lab Co., Ltd., Japan, were converted into Pb ₆ ZnNb ₆ O ₂₂ , Pb ₆ ZnNb ₆ O ₂₂ and Pb ₆ Each was weighed according to the stoichiometric ratio of ZnNb ₆ O ₂₂ , and then mixed using anhydrous ethanol and zirconia balls.

The mixed powder was calcined at about 900-950 ° C. and then ground using zirconia balls. After the pulverization, polyvinyl alcohol was added as a binder to granulate the particles, and uniaxially pressurized and hydrostatically formed at a pressure of about 1000 kg / cm ² to prepare a molded article. Subsequently, the molded body was sintered at a temperature range of 1150 ° C to 1250 ° C. The sintered body was processed into a disk shape having a diameter of 2 inches and a thickness of 7 mm, and burned out at a temperature of about 800 ° C. to prepare a sputter target.

2A to 2C are X-ray diffraction patterns of the prepared Pb ₆ ZnNb ₆ O ₂₂ , Pb ₆ ZnNb ₆ O _22, and Pb ₆ ZnNb ₆ O ₂₂ targets, respectively. From (a) of FIG. 2 and (c) of FIG. 2, each of the prepared targets has a single cubic pyrochlore phase (diffraction peaks represented by '▼' are all in the orthogonal pyrochlore phase). It is a diffraction peak of).

Table 1 below is a table summarizing the physical properties and manufacturing conditions of each manufactured target.

Furtherance sign Calcination temperature (℃) Sintering Temperature (℃) Phase Pb ₆ ZnNb ₆ O ₂₂ PZN 900 1150 Cubic Pb ₆ MgNb6O ₂₂ PMN 950 1250 Cubic Pb ₆ NiNb ₆ O ₂₂ PNN 950 1250 Cubic

Fabrication of Dielectric Thin Films

Dielectric thin films were prepared by using a reactive RF magnetron sputtering system having off-axis geometry as a target of Table 1 above.

Pt (111) / TiO ₂ / SiO ₂ / Si was used as the substrate material, and the thickness of each substrate was 1500 μs / 200 μs / 3000 μs / 550 μm.

The chamber was initially vacuumed at a pressure of about 3 × 10 ⁻⁶ Torr, and argon gas having a purity of 99.99% as a sputter gas and oxygen gas having a purity of 99.99% as a reactive gas were introduced into the chamber.

A 150 W RF power source was used as the plasma source. The flow rate controller maintained the flow rate of argon gas at 20 sccm and the flow rate of oxygen gas at 2 sccm to maintain an O ₂ / Ar ratio of about 10%. Working pressure was maintained at 10 mTorr.

During deposition, the substrate temperature was set as the main process variable, and the deposition was performed at a temperature range of 350 to 550 ° C. for each target composition. During deposition, the distance between the target and the substrate was maintained at 13 cm. The thickness of the deposited thin film was maintained to be about 4000 mm 3.

As-deposited thin film may exist in the amorphous phase at low temperature and crystalline phase at high temperature according to the substrate temperature at the time of manufacture, the thin film is post-heat-treated for 3 hours at an air temperature of about 500 ~ 800 ℃ .

Dielectric Thin Film Characteristics

a. X-ray Diffraction Characteristics

3A is an X-ray diffraction pattern of a deposited state of a PZN thin film deposited at a substrate temperature of 350 ° C. and a thin film after post-heat treatment. Referring to FIG. 3, no cubic pyroclaw peak is observed in the thin film in the deposited state, and an increase in cubic phase is observed as the heat treatment temperature increases. In addition, it can be seen that no secondary phase other than the cubic pyrochlore phase is formed even after the post-heat treatment.

3B to 3D are X-ray diffraction patterns of a thin film in a deposited state and a post-heat treated thin film at a substrate temperature of 450 ° C., 500 ° C. and 550 ° C., respectively. From these patterns, it can be seen that as the substrate temperature increases, crystallization proceeds in the thin film in a deposited state. In addition, as in FIG. 3, an increase in cubic phase is observed as the post-heat treatment temperature increases. On the other hand, it can be seen that no secondary phase other than the pyrochlore phase is observed during the post-heat treatment.

As can be seen from FIG. 3A to FIG. 3D, it can be seen that the formed PZN thin film has a cubic pyrochlore structure of a single phase during post-heat treatment.

4A to 4D are X-ray diffraction patterns after the deposition state and the post-heat treatment, respectively, according to the substrate temperature of the PMN thin film. The substrate temperatures in FIGS. 4A-4D were 350 ° C., 450 ° C., 500 ° C. and 550 ° C., respectively. It can be seen from FIG. 4A to FIG. 4D that the thin film exists in the amorphous phase when the substrate temperature is low, and that the formation of the cubic pyrochlore phase is accelerated as the post-heat treatment temperature increases. In addition, it can be seen that even in the case of the PMN thin film, the formation of the secondary phase is not observed.

5A and 5B are X-ray diffraction patterns after undergoing deposition and post-heat treatment of PNN thin films deposited at substrate temperatures of 350 ° C. and 550 ° C., respectively.

In the case of FIGS. 5A and 5B, it can be seen that the substrate temperature and the post-heat treatment temperature exhibit the same behaviors as those of the PZN thin film and the PMN thin film described above in connection with the formation of the cubic pyroclaw phase.

b. Genetic characteristics

Using a shadow mask to measure the dielectric properties of the Pyroclaw thin film, an Ag dot having a diameter of 250 μm and a thickness of 5 μm was formed on the thin film by thermal evaporation to reduce the capacitance between the Pt layer of the substrate and the Ag dot. Measured. 6 schematically illustrates a laminated structure of a thin film sample for measuring dielectric properties.

Capacitance and dissipation factor (tan δ) were measured at an effective voltage of 500 mV oscillating at a frequency of 40 Hz to 10 MHz using an Agilent 4249A impedance analyzer. However, in the case of the thin film not subjected to the post-heat treatment at the substrate temperature of 350 ° C., as described in the X-ray diffraction pattern, the capacitance and the electric field variability were not measured because the cubic pyrochlore phase was not formed. .

The dielectric constant was calculated from the following Equation 1 from the measured capacitance.

는 8.8542×10^-12이다)Where C is the capacitance, d is the film thickness, A is the top electrode area,

Is 8.8542 × 10 ^-12 )

In addition, the electric field variable rate defined by the change in the dielectric constant of the thin film when the electric field is applied to the dielectric constant of the thin film when no electric field is applied was measured according to the following equation. The field variability was measured at a frequency of 1 MHz and the applied field range was ± 1000 kV / cm.

(Where C ₀ is the capacitance at the field, C _v is the capacitance at the time of application)

FIG. 7A is a graph illustrating a change in dielectric constant according to deposition state and post-heating temperature of a PZN thin film formed at various substrate temperatures (S. T.).

It can be seen from this graph that the dielectric constant increases as the substrate temperature and the post-heating temperature increase. In case of PZN thin film deposited at substrate temperature of 550 ℃, after 800 ℃ heat treatment, the dielectric constant is about 180 ~ 200.

FIG. 8A is a graph showing dielectric loss characteristics of PZN thin films formed at various substrate temperatures according to deposition conditions and post-heat treatment temperatures.

As shown, it can be seen that the dielectric loss decreases as the substrate temperature increases, and the dielectric loss of the obtained thin film is at most 0.006 or less. In the case of the thin film formed at the substrate temperature of 550 ° C., the dielectric loss is 0.002 or less. It can be seen that the maximum decreases to 0.001.

FIG. 7B is a graph showing a change in dielectric constant according to the deposition state and the post-heating temperature of a PMN thin film formed at various substrate temperatures.

It can be seen from this graph that the dielectric constant of the thin film increases as the substrate temperature and the post-heating temperature increase. The PMN thin film deposited at a substrate temperature of 550 ° C. has a dielectric constant of 100 or more, and after passing through 800 ° C., the dielectric constant is about 190.

FIG. 8B is a graph illustrating dielectric loss characteristics of PMN thin films formed at various substrate temperatures according to deposition conditions and post-heat treatment temperatures.

As shown, it can be seen that the dielectric loss decreases as the substrate temperature increases, and the dielectric loss of the obtained thin film is at most 0.007 or less. In the case of the thin film formed at the substrate temperature of 550 ° C., the dielectric loss is 0.001. It can be seen that the decrease.

FIG. 7C is a graph showing changes in dielectric constants according to deposition conditions and post-heating temperatures of PNN thin films formed at various substrate temperatures.

It can be seen from this graph that the dielectric constant of the thin film increases as the substrate temperature and the post-heating temperature increase. In the case of the PNN thin film deposited at a substrate temperature of 550 ° C., the dielectric constant is about 140 when subjected to post-heat treatment of 800 ° C.

FIG. 8C is a graph illustrating dielectric loss characteristics of PNN thin films formed at various substrate temperatures according to deposition conditions and post-heat treatment temperatures.

As shown, it can be seen that the dielectric loss decreases as the substrate temperature increases, and the dielectric loss of the obtained thin film is at most 0.009 or less. In the case of the thin film formed at the substrate temperature of 550 ° C., the dielectric loss is about 0.0015. It can be seen that the decrease.

FIG. 9A is a graph illustrating electric field variable rate characteristics of PZN thin films formed at various substrate temperatures. Here, the electric field variable rate is a value calculated at 1000 kV / cm.

Referring to FIG. 9A, the electric field variable rate increases as the substrate temperature increases and increases as the post-heat treatment temperature increases. In addition, in the case of the thin film formed at a substrate temperature of 550 ° C., the electric field variable rate may be about 30% to about 42% according to the post-heat treatment temperature.

9B is a graph showing the electric field variable rate characteristic of PMN thin films formed at various substrate temperatures.

Referring to FIG. 9B, it can be seen that the electric field variable rate increases with the increase of the substrate temperature and the post heat treatment temperature. Also, in the case of the thin film formed at the substrate temperature of 550 ° C., the electric field variable rate is maximum depending on the post heat treatment temperature. About 43% of the names are known.

FIG. 9C is a graph showing electric field variability characteristics of PNN thin films formed at various substrate temperatures. In general, it can be seen that the variation of the electric field variable rate according to the substrate temperature and the post-heat treatment temperature is slower than that of PZN and PMN. The thin film formed at the substrate temperature of 550 ° C. shows a maximum electric field variable rate of 22%. .

Dielectric properties (dielectric constant, dielectric loss) and electric field variable rate characteristics of PZN, PMN, and PNN thin films calculated with reference to the above graphs are summarized in Tables 2 to 4 below.

Characteristic table of PZN thin film Characteristics Heat Treatment Temperature Dielectric constant Dielectric loss (× 10 ^-3 ) Electric field variable rate (%) Substrate temperature 350 ℃ 450 ℃ 500 ℃ 550 ℃ 350 ℃ 450 ℃ 500 ℃ 550 ℃ 350 ℃ 450 ℃ 500 ℃ 550 ℃ as-dep - 57.7 117 178.1 - 5.8 3.71 1.56 - 4.2 23.1 29.4 500 ℃ 63 124.5 167.4 184.6 4.81 3.2 1.82 1.33 14.3 16.35 28.5 30 600 ℃ 72.1 137.7 171.9 193.1 4.6 2.21 1.39 1.2 15 22.64 30 32 700 ℃ 88.8 145.3 179.1 198 2.73 1.7 1.32 1.01 18.8 26.35 34 36 800 ℃ 114.4 152.7 181.8 197.9 2.43 1.62 1.18 0.99 20.54 30.2 38 42

PMN thin film characteristics table Characteristics Heat Treatment Temperature Dielectric constant Dielectric loss (× 10 ^-3 ) Electric field variable rate (%) 350 ℃ 450 ℃ 500 ℃ 550 ℃ 350 ℃ 450 ℃ 500 ℃ 550 ℃ 350 ℃ 450 ℃ 500 ℃ 550 ℃ as-dep - 47.7 94.5 105.4 - 6.62 6.41 5.51 - 1.2 1.5 11.9 500 ℃ 53.2 121.9 129.7 156.5 4.5 2.72 2.15 1.53 2.3 6.7 14.1 21.6 600 ℃ 62.9 134.8 139.4 177.9 3.92 1.97 1.36 1.06 14.36 23.1 25.8 28.8 700 ℃ 76.3 140.9 142.9 183.6 2.97 1.21 1.29 1.5 17.62 24.6 30.5 36.5 800 ℃ 112.3 141.6 143.2 190.9 2.51 1.7 1.42 1.28 19.54 24.8 33.2 43

Characteristic table of PNN thin film Characteristics Heat Treatment Temperature Dielectric constant Dielectric loss (× 10 ^-3 ) Electric field variable rate (%) 350 ℃ 450 ℃ 500 ℃ 550 ℃ 350 ℃ 450 ℃ 500 ℃ 550 ℃ 350 ℃ 450 ℃ 500 ℃ 550 ℃ as-dep - 43.2 70.2 95.6 - 8.56 6.21 5.09 - 0 0 11 500 ℃ 46.5 98.7 118.2 125.3 6.67 3.56 2.82 2.54 10.5 12.5 13 14 600 ℃ 59.5 125.9 138.2 142.6 5.03 2.87 1.84 1.57 13.3 15.3 18.6 19 700 ℃ 61.6 130.6 145 145.8 4.07 2.76 1.72 1.56 12.5 16.2 20.6 21.5 800 ℃ 70.2 135.3 144.3 149.4 3.92 2.64 1.67 1.55 14 16 21 22.7

The present invention provides a Pb based dielectric thin film of cubic pyroclaw single phase. The Pb-based pyroclear thin film of the present invention exhibits high dielectric constant and low dielectric loss characteristics. In addition, the Pb-based Pyroclaw thin film of the present invention exhibits a high electric field variable rate of up to 40% or more, which is suitable for use as an electric field variable capacitor of a phase converter, a flat antenna, a filter, and the like.

In addition, the dielectric thin film of the present invention has the advantage that the dielectric properties of the thin film, that is, the dielectric constant, the electric field variable rate can be adjusted in a wide range according to the substrate temperature and the post-heat treatment temperature.

Moreover, the dielectric thin film of the present invention exhibits high electric field variability and low dielectric loss as the substrate temperature is increased and post-heat treatment, resulting in a dielectric thin film having a very high profit index. For example, a thin film prepared through a substrate temperature of 550 ° C. and a post heat treatment of 800 ° C. has a dielectric constant of about 190 and a dielectric constant of 0.001, and has an electric field variable rate of 40% (0.4) or more. Accordingly, since the dielectric thin film of the present invention exhibits a very high value of K factor defined as the ratio of the electric field variable rate to dielectric loss, the dielectric thin film of the present invention overcomes the limitation of application to the field variable device of the conventional dielectric thin film. Very promising.

Claims (27)

Pb-X-Nb-O (where X is one element selected from the group consisting of Zn, Ni, Cu and Mg) pyrochlore solid solution thin film, Dielectric thin film, characterized in that the electric field variable rate is defined by the following formula is about 10 to 43%

(Where C ₀ is the capacitance at the field, C _v is the capacitance at 1000 kV / cm). The method of claim 1, The electric field variable rate is a dielectric thin film, characterized in that 30 to 43%. The method of claim 1, The dielectric thin film, characterized in that the dielectric constant is 100 or more. The method of claim 1, The dielectric loss tan δ is less than 0.01. The method of claim 1, The dielectric thin film, characterized in that the thickness of less than 4500Å. Solid solution thin film of cubic pyrochlore single phase represented by Pb ₆ Zn ₁ Nb ₆ O ₂₂ . The method of claim 6, The thin film is a solid solution thin film, characterized in that the electric field variable rate is 4 ~ 43% defined by the following formula

(Where C ₀ is the capacitance at the field, C _v is the capacitance at 1000 kV / cm). The method of claim 6, The dielectric constant is a solid solution thin film, characterized in that 50 to 200. The method of claim 6, The dielectric loss tan δ is less than 0.006 solid solution thin film. The method of claim 6, The thin film of the solid solution, characterized in that the thickness of less than 4500Å. Solid solution thin film of cubic pyrochlore single phase represented by Pb ₆ Mg ₁ Nb ₆ O ₂₂ . The method of claim 11, The thin film is a solid solution thin film, characterized in that the electric field variable rate is defined by the following formula 2 ~ 43%

(Where C ₀ is the capacitance at the field, C _v is the capacitance at 1000 kV / cm). The method of claim 11, A solid solution thin film, wherein the dielectric constant is 45 or more and 200 or less. The method of claim 11, The solid solution thin film, wherein the dielectric loss tan δ is less than 0.007. The method of claim 11, The thin film of the solid solution, characterized in that the thickness of less than 4500Å. Solid solution thin film of cubic pyrochlore single phase represented by Pb ₆ Ni ₁ Nb ₆ O ₂₂ . The method of claim 16, The thin film is a solid solution thin film, characterized in that the electric field variable rate is defined by the following formula 5 ~ 25%

(Where C ₀ is the capacitance at the field, C _v is the capacitance at 1000 kV / cm). The method of claim 16, Solid solution thin film, characterized in that the dielectric constant is 40 or more and 150 or less. The method of claim 16, The solid solution thin film, wherein the dielectric loss tan δ is less than 0.008. The method of claim 16, The thin film of the solid solution, characterized in that the thickness of less than 4500 kPa. Providing a sintered compact target represented by Pb-X-Nb-O, wherein X comprises at least one selected from the group consisting of Zn, Ni, Cu, and Mg; Heating the substrate; And Sputtering the target material to form a Pb-X-Nb-O thin film on the substrate. The method of claim 21, The Pb-X-Nb-O thin film is a dielectric thin film formation method, characterized in that the pyrochlore single phase represented by the composition formula Pb ₆ X ₁ Nb ₆ O ₂₂ . The method of claim 21, In the substrate heating step, the substrate temperature is maintained at 350 ~ 600 ℃ characterized in that the dielectric thin film forming method. The method of claim 21, In the sputtering of the Pb-X-Nb-O thin film, the mixing ratio of oxygen gas to argon is maintained at 10%. The method of claim 21, In the sputtering of the Pb-X-Nb-O thin film, the deposition pressure is maintained at 10 mTorr. The method of claim 21, The Pb-X-Nb-O thin film forming step further comprises the step of post-heat treatment at a temperature of 500 ℃ or more. The method of claim 26, The post-heat treatment step is a dielectric thin film formation method, characterized in that carried out at a temperature of 800 ℃ or less.

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