JPS63236377A - Edge emission type light-emitting diode - Google Patents
Edge emission type light-emitting diodeInfo
- Publication number
- JPS63236377A JPS63236377A JP62070711A JP7071187A JPS63236377A JP S63236377 A JPS63236377 A JP S63236377A JP 62070711 A JP62070711 A JP 62070711A JP 7071187 A JP7071187 A JP 7071187A JP S63236377 A JPS63236377 A JP S63236377A
- Authority
- JP
- Japan
- Prior art keywords
- current injection
- current
- light
- injected
- injection region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002347 injection Methods 0.000 claims abstract description 28
- 239000007924 injection Substances 0.000 claims abstract description 28
- 230000003287 optical effect Effects 0.000 abstract description 12
- 230000010355 oscillation Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 238000012544 monitoring process Methods 0.000 abstract description 5
- 230000003321 amplification Effects 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
本発明は、端面放射型発光ダイオードにおいて、高精度
なモニタ光監視を行なう為、電流注入領域を素子上面両
端部に、各々の面積が同等である様、設け、且つ、両電
流注入領域間には所定長のｔ流末注入領域を設けるもの
である。[Detailed Description of the Invention] [Summary] In order to perform highly accurate monitoring light monitoring in an edge-emitting light emitting diode, the present invention provides current injection regions at both ends of the top surface of the device, so that the area of each region is equal. In addition, a t-flow end injection region of a predetermined length is provided between both current injection regions.
本発明は、半導体装置、特にその端面放射型発光ダイオ
ードの構造に関する。The present invention relates to a semiconductor device, and particularly to the structure of an edge-emitting light emitting diode thereof.
従来の端面放射型発光ダイオードの一例を、第３因囚〜
何を参照して説明する。第３図において、（Ａ）は、従
来の端面放射型発光ダイオードの上面構造を示す図、ａ
３）は、線分＆−＆’における断面図、（０は、線分ｂ
−ｂ’における断面図である。An example of a conventional edge-emitting light emitting diode is
What to see and explain. In FIG. 3, (A) is a diagram showing the top structure of a conventional edge-emitting light emitting diode;
3) is a cross-sectional view at line segment &-&', (0 is line segment b
It is a sectional view at -b'.
図において、１はｎ型インジウム燐（ＩｎＰ）基板、２
はＰ型ＩｎＰｔ流阻上層であり、Ｐ型１ｎＰ層２及びｎ
型ＺｎＰ基板ＩＫ設けられたｖＨ内にｎ型ＩｎＰ閉じ込
め層３、ノンドープのインジウム−ガリウム−砒素−燐
（Ｉｎ・Ｇａ＠ＡｓＩＩＰ）活性層４が形成され、更に
、その上部にＰ型ＩｎＰ閉じ込めｊ＃Ａ５及びＰ型Ｉｎ
ＧａＡａＰコンタクト層６が順次形成された、■溝基板
埋込みへテロ構造、いわゆるＶＳＢ（Ｖ ｇｒｏｏｖｅ
ｄ ５ｕｂｓｔｒａｔｅ Ｂｕｒｉｅｄ ｈｅｔ
ｅｒｏ ５ｔｒｕｃｔｕｒｅ ）構造である。また、素
子の上面は第３図（４）に示す様に絶縁膜７によって絶
縁されており、光送出面となっているＡ端面側にのみ、
この絶縁膜７が除去されて電流注入領域８が形成されて
いる。In the figure, 1 is an n-type indium phosphide (InP) substrate, 2
is the P-type InPt flow-blocking upper layer, and the P-type 1nP layer 2 and n
An n-type InP confinement layer 3 and a non-doped indium-gallium-arsenic-phosphorus (In.Ga@AsIIP) active layer 4 are formed in the vH provided with the ZnP type substrate IK, and furthermore, a p-type InP confinement layer 4 is formed on top of the n-type InP confinement layer 3. #A5 and P type In
A so-called VSB (V groove substrate buried heterostructure) in which GaAaP contact layers 6 are sequentially formed.
d 5ubstrate Buried het
ero5structure) structure. Further, the upper surface of the element is insulated by an insulating film 7 as shown in FIG. 3 (4), and only on the A end surface side which is the light transmission surface
This insulating film 7 is removed to form a current injection region 8.
前記した従来の端面放射型発光ダイオードは光送出面と
なっているＡ端面側の活性層にのみ電流を注入して発光
領域とし、その他の’！１１流を注入しない活性層を光
減衰領域として使用することによって、レーザ発振を抑
えるものである。In the conventional edge-emitting light emitting diode described above, a current is injected only into the active layer on the side of the A end face, which is the light transmission surface, to form a light emitting region, and the other '! Laser oscillation is suppressed by using the active layer into which the No. 11 flow is not injected as an optical attenuation region.
通常、発光素子を光通信用光源に用いる場合、信号光々
ｉを一定に制するためのモニタ光監視装４Ｒを必要とす
ることがある。そのため、一般には上記した端面放射型
発光ダイオードの場合、光送出側（Ａ面）の反対側（Ｂ
面）から出射される光をモニタ光として利用するが、そ
の光出力は光減衰領域を介して出射されるため、光取出
し側に比べて大（隔に減少し、これをモニタ光として使
用す−るためには、増幅或いは換算する必要があった。Normally, when a light emitting element is used as a light source for optical communication, a monitor light monitoring device 4R may be required to control the signal light i to a constant level. Therefore, in the case of the above-mentioned edge-emitting light emitting diode, the side (B side) opposite to the light transmission side (A side) is generally
The light emitted from the light output side is used as monitor light, but since the light output is emitted through the optical attenuation region, the light output is reduced to a larger value than the light output side. -, it was necessary to amplify or convert.
更にモニタ光の増幅、換算作業に起因して検出されたそ
の変化量に誤差が生じる恐れがあり、ひいては高精度な
光通信が期待できないという問題点を有していた。Furthermore, there is a possibility that errors may occur in the amount of change detected due to amplification and conversion of the monitor light, and as a result, highly accurate optical communication cannot be expected.
また、光出力が光送出側とモニタ側とでは異なるため、
第４図の渫にステム１０にのブロック９このダイオード
チップ１２をマウントする際にはモニタ光出力面を検出
器１３側に対向させる必要があり、それに起因する組立
時の作業性低下が問題となっていた。Also, since the optical output differs between the optical sending side and the monitor side,
When mounting the block 9 on the stem 10 in Fig. 4, the monitor light output surface must face the detector 13 side, which causes a problem of reduced workability during assembly. It had become.
本発明は上記した問題点に鑑み、光送出面と同等の光出
力を、その反対面側よシ出力可能な端面放射型発光ダイ
オードを得るものであり、それは電流注入領域を、素子
上面両端部に各々の面積が同等である様設け、且つ両電
流注入領域間にはレーザ発振を抑制する所定長の電流注
入領域を設けるものである。In view of the above-mentioned problems, the present invention provides an edge-emitting light emitting diode capable of outputting light output equivalent to that of the light output surface from the opposite surface. The area of each current injection region is the same, and a current injection region of a predetermined length for suppressing laser oscillation is provided between both current injection regions.
本発明によると、レーザ発振を抑えるための所定長の電
流末注入領域を介して光送出側及びその反対側に電流注
入領域が設けられるため、光送出面側と同等の光出力を
その反対面より得ることができる。According to the present invention, the current injection region is provided on the light transmission side and the opposite side through the current end injection region of a predetermined length for suppressing laser oscillation, so that the same optical output as that on the light transmission side can be generated on the opposite side. You can get more.
以下、本発明の一実施例を第１図囚〜（０を参照して詳
細に説明する。第１図において、（２）は本実施例によ
る端面放射型発光ダイオードの上面構造を示す図、の）
ｒｆｉ線分ａ−ａ’における断面図、（Ｃ）は線分ｂ−
ｂ’における断面図である。Hereinafter, one embodiment of the present invention will be described in detail with reference to FIGS. of)
Cross-sectional view along rfi line a-a', (C) is line segment b-
It is a sectional view at b'.
本実施例は、前記した促米例と同様にＰ型インジウム・
燐（ＩｎＰ ） ’［流用止層２及びｎ型ＩｎＰ基板１
に設けられた７ｍ内にｎ型ＩｎＰ閉じ込め層３、ノンド
ープのインジウム・ガリウム・砒素・燐（ＩｎＧａＡｓ
Ｐ ）活性層４が形成され、更にＰ型ＩｎＰ閉じ込め層
５及びＰ型ＩｎＧａＡｓＰコンタクト層６が順次形成さ
れた、いわゆるＶＳＢ構造であるが、第１図囚に示す様
に電流注入領域８が、光放射面となっているＡ、Ｂ面の
両方に開面積（７５μｍ×６０μｍ）で形成され、更に
その間には絶縁膜７によって絶縁された、その距離が４
５０μｍの電流末注入領域１４が設けられている。この
電流注入領域１４直下の活性層４け、電流注入がなされ
ないために光減衰領域として作用し、その結果、素子両
端で発生した光が互いに干渉することはなく、レーザ発
振することもない。また、債の工程により素子上面全面
には、例えばチタン（Ｔｉ）／口金（Ｐｔ）／金（Ａｕ
）からなる１！極が形成され、その結果、絶縁膜７のな
い両電流注入領域８には各々、等しＸＡ電流が注入され
る。This example uses P-type indium as well as the rice promotion example described above.
Phosphorus (InP)' [Diversion stop layer 2 and n-type InP substrate 1
An n-type InP confinement layer 3, a non-doped indium-gallium-arsenic-phosphorus (InGaAs
P) This is a so-called VSB structure in which an active layer 4 is formed, and a P-type InP confinement layer 5 and a P-type InGaAsP contact layer 6 are sequentially formed.As shown in FIG. An open area (75 μm x 60 μm) is formed on both the A and B surfaces, which are the light emitting surfaces, and an insulating film 7 is insulated between them, and the distance is 4.
A current end injection region 14 of 50 μm is provided. Since no current is injected into the active layer 4 directly below the current injection region 14, it acts as a light attenuation region, and as a result, the light generated at both ends of the device does not interfere with each other, and no laser oscillation occurs. Furthermore, due to the bonding process, the entire upper surface of the element is coated with, for example, titanium (Ti)/base (Pt)/gold (Au).
) consisting of 1! A pole is formed, so that an equal XA current is injected into each of the two current injection regions 8 without the insulating film 7.
以上の様に本実施例の端面放射型発光ダイオードは電流
注入領域がレーザ発ｍｋ抑えるための所定長の電流末注
入領域狭んで光放射面となっているＡ面倒及びＢ面側に
各々同等の面積で設けられているためＡ、Ｂ面の両方よ
り同等の光出力を得ることができ、その一方を光送出側
、他方をモニタ側として使用することにより、モニタ光
の増幅、換算が不要な高精度のモニタ光監視が可能であ
る。As described above, in the edge-emitting light emitting diode of this embodiment, the current injection region has a predetermined length for suppressing laser emission mk, and the current end injection region is narrowed to become a light emitting surface. Because it is provided in two areas, it is possible to obtain the same optical output from both sides A and B, and by using one side as the light transmission side and the other as the monitor side, there is no need to amplify or convert the monitor light. Highly accurate monitor light monitoring is possible.
また、更に第４図に示す様にダイオードチップをステム
１０のブロック９にマウントする際においてｌｄＡ 、
Ｂ面とも同等の光出力が得られることから、どちらの
面が検出器１３に対向していても前述の効果が得られる
ため、組立時における作業性を著しく向上させることが
できる。Further, as shown in FIG. 4, when mounting the diode chip on the block 9 of the stem 10, ldA,
Since the same optical output can be obtained from the B side, the above-mentioned effect can be obtained regardless of which side faces the detector 13, so that workability during assembly can be significantly improved.
また、本実施例による端面放射型発光ダイオードの別の
使用法として、第２図に示す様に、例えば光ファイバか
らの光信号を、例えばフォトダイオードなどからなるデ
フレクタに入力して一旦、電気信号に変換し、それを増
幅器１５などを介して本実施例の端面放射型発光ダイオ
ードに供給することによって、プリズムやハーフミラ−
等の光学系を使用しない多出力の中継器として用いるこ
とが可能である。As another method of using the edge-emitting light emitting diode according to this embodiment, as shown in FIG. By converting it into
It can be used as a multi-output repeater without using any optical system.
以上述べた様に、本発明の端面放射型発光ダイオードは
、同等の光出力を２方向に出射できるため一方を光送出
側、他方をモニタ側として使用することによって、高精
度なモニタ光監視が可能である他、前述した様に、多出
力の中継器としても使用可能な端面放射製発光ダイオー
ドを得ることができる。As described above, the edge-emitting light emitting diode of the present invention can emit equal light output in two directions, so by using one side as the light transmission side and the other side as the monitor side, highly accurate monitor light monitoring can be achieved. In addition to this, as described above, it is possible to obtain an edge-emitting light emitting diode that can also be used as a multi-output repeater.
また、以上はＩｎＧａ Ａｓ Ｐ ／ ＩｎＰ系の端面
放射型発光ダイオード、その中でも特にＶＳＢ構造のも
のについて説明したが、この発明は素子側面に発光領域
を有し、その上面より電流注入を行なう構造の端面放射
型発光ダイオードならば、他のいかなる構造、及び半導
体材料の発光ダイオードにも適用できると共に、導電ｍ
金入れ換えた構造においても同様の効果が得られること
は明白である。In addition, although the above description has been made of an InGaAsP/InP-based edge-emitting type light emitting diode, especially one with a VSB structure, this invention has a light emitting region on the side surface of the device, and a structure in which current is injected from the top surface. Edge-emitting light-emitting diodes can be applied to light-emitting diodes of any other structure and semiconductor material, and can also be applied to light-emitting diodes of any other structure and semiconductor material.
It is clear that a similar effect can be obtained in a structure in which gold is replaced.
第１図は、本発明による端面放射製発光ダイオードの一
実施例を説明する図、第２図は、本発明による端面放射
型発光ダイオードの使用例全説明する図、第３因は従来
の端面放射型発光ダイオードを説明する図、第４図はダ
イオードチップのマウント方法を説明する図である。
１．３ ・・・・ ・・・・・ ｎ型１ｎＰ ｌｉｔ
＋２．５ ・・・・・・ Ｐ型ＩｎＰ層。
４ ・・ ・・・・・・・・・・・ ｎ型ＩｎＧａＡｓ
Ｐ層。
６ ・・・・・・・・・・・・・・ Ｐ型ＩｎＧａＡ
ｓＰ層。
７ ・・・・・・・・・・ ・・ 絶縁膜。
８ ・・・・・・・・・・・・・・・・・ 電流注入領
域。
９ ・・・・・・・・・・・・ サブマウント。
１０ ・・・・・・・・・・・・・・ ステム。
１２ ・・・・・・・・・・・・・・・ ダイオードチ
ップ。
１３ ・・・・・・・・・ 検出器。
１４ ・・・・・・・・・・・・ 電流末注入領域。
ネギ明ｉ；ようＰ＃Ｉ向Ｘ気祖−４Ｉ資たグイオード０
穴記１列第 １ 図
不発明婦面方（射を売九タイオードｎイ吏用１列り西
ど トｄFIG. 1 is a diagram illustrating an embodiment of the edge-emitting light emitting diode according to the present invention, FIG. 2 is a diagram illustrating all usage examples of the edge-emitting light emitting diode according to the present invention, and the third factor is the conventional edge-emitting light emitting diode. FIG. 4 is a diagram illustrating a radiation-type light emitting diode, and FIG. 4 is a diagram illustrating a method for mounting a diode chip. 1.3 ・・・・・・・・・ N-type 1nP lit
+2.5... P-type InP layer. 4 ・・・・・・・・・・・・ N-type InGaAs
P layer. 6 ・・・・・・・・・・・・・・・ P-type InGaA
sp layer. 7 ・・・・・・・・・・・・ Insulating film. 8 ・・・・・・・・・・・・・・・ Current injection region. 9 ・・・・・・・・・・・・ Submount. 10 ・・・・・・・・・・・・ Stem. 12 ・・・・・・・・・・・・ Diode chip. 13 ・・・・・・・・・Detector. 14 ...... Current end injection region. Negi Akira; YoP #I Muko
Anonymous 1st row 1st figure non-inventive woman side (1st row west
Do d
Claims (1)
の活性層に電流が注入されてなり、素子側面より光放射
がなされる端面放射型発光ダイオードにおいて、 該電流注入領域を、素子上面両端部に各々の面積が同等
である様設け、且つ両電流圧入領域間には所定長の電流
末注入領域を有することを特徴とする端面放射型発光ダ
イオード。[Claims] An edge-emitting light emitting diode in which current is injected into a striped active layer from a current injection region provided on the top surface of the device, and light is emitted from the side surface of the device, wherein the current injection region is 1. An edge-emitting light emitting diode, which is provided at both ends of the upper surface of the device so that the respective areas are equal, and has a current end injection region of a predetermined length between both current press-fit regions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62070711A JPS63236377A (en) | 1987-03-25 | 1987-03-25 | Edge emission type light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62070711A JPS63236377A (en) | 1987-03-25 | 1987-03-25 | Edge emission type light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63236377A true JPS63236377A (en) | 1988-10-03 |
Family
ID=13439434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62070711A Pending JPS63236377A (en) | 1987-03-25 | 1987-03-25 | Edge emission type light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63236377A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04310974A (en) * | 1991-04-09 | 1992-11-02 | Ricoh Co Ltd | Image recorder |
| JP2007519244A (en) * | 2004-01-23 | 2007-07-12 | エグザロス・アクチェンゲゼルシャフト | Super luminescent light emitting diode |
-
1987
- 1987-03-25 JP JP62070711A patent/JPS63236377A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04310974A (en) * | 1991-04-09 | 1992-11-02 | Ricoh Co Ltd | Image recorder |
| JP2007519244A (en) * | 2004-01-23 | 2007-07-12 | エグザロス・アクチェンゲゼルシャフト | Super luminescent light emitting diode |
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