JPS63229864A - Method of joining anode - Google Patents
Method of joining anodeInfo
- Publication number
- JPS63229864A JPS63229864A JP6487987A JP6487987A JPS63229864A JP S63229864 A JPS63229864 A JP S63229864A JP 6487987 A JP6487987 A JP 6487987A JP 6487987 A JP6487987 A JP 6487987A JP S63229864 A JPS63229864 A JP S63229864A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- insulating material
- alkali
- anode
- brought
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000011810 insulating material Substances 0.000 claims abstract description 24
- 150000001447 alkali salts Chemical class 0.000 claims abstract description 11
- 239000003513 alkali Substances 0.000 abstract description 13
- 239000002344 surface layer Substances 0.000 abstract description 6
- 238000005204 segregation Methods 0.000 abstract description 5
- 150000002500 ions Chemical class 0.000 abstract description 4
- 230000006866 deterioration Effects 0.000 abstract description 3
- 239000011521 glass Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- -1 Na'' Chemical class 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000005995 Aluminium silicate Substances 0.000 description 1
- 235000012211 aluminium silicate Nutrition 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はセラミックス、ガラスのような絶縁材の表面に
、金属やシリコン等を接合するために利用される陽極接
合方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an anodic bonding method used for bonding metal, silicon, etc. to the surface of an insulating material such as ceramics or glass.
（従来の技術）
例えば半導体圧力センサー等の製造工程においては、ガ
ラス等の絶縁材の表面にシリコンウェハー等を接合する
ために陽極接合が行われている。(Prior Art) For example, in the manufacturing process of semiconductor pressure sensors and the like, anodic bonding is performed to bond a silicon wafer or the like to the surface of an insulating material such as glass.
この陽極接合法は米国特許第３３９７２７８号明細書等
にも示されているとおり、ガラス等の絶縁材の片面に接
合しようとする金属やシリコンウェハー等を陽極として
接触させるとともに、絶縁材の反対側の表面に金属製の
陰極を接触させ、３００〜４ｏｏ℃の温度条件下で直流
電圧を印加することにより陽極と絶縁材とを接合させる
方法である。ところがこのような陽極接合の際には、ガ
ラス中のＮａ”、Ｋ゛、Ｌ１゛等のアルカリイオンが陰
極側に向って移動し、陰極と接する絶縁体の表面層にア
ルカリリッチな層が形成され、表面層の熱膨張率を大き
くして反りを生じさせたり、アルカリリッチな表面層の
吸湿性によって温度、湿度の変化によるゼロ点の変動を
招いたりする欠点があった。そこでこのような欠点を解
決するために、特開昭５８−１１８１５９号公報には陰
極側のアルカリリッチな表面層をエツチング又は機械的
研摩により除去し、安定な品質の半導体圧力センサーを
製造する技術が示されているが、陽極接合後にこのよう
な加工を行うことは工程が複雑化し、コスト高となる等
の問題があった。As shown in U.S. Patent No. 3,397,278, etc., this anodic bonding method involves contacting one side of an insulating material such as glass with a metal, silicon wafer, etc. to be bonded as an anode, and In this method, the anode and the insulating material are bonded by bringing a metal cathode into contact with the surface of the insulator and applying a DC voltage at a temperature of 300 to 40°C. However, during such anodic bonding, alkali ions such as Na'', K'', and L1'' in the glass move toward the cathode, forming an alkali-rich layer on the surface layer of the insulator in contact with the cathode. However, the thermal expansion coefficient of the surface layer increases, causing warping, and the hygroscopicity of the alkali-rich surface layer causes zero point fluctuations due to changes in temperature and humidity. In order to solve this problem, Japanese Patent Application Laid-open No. 118159/1983 discloses a technique for manufacturing a semiconductor pressure sensor of stable quality by removing the alkali-rich surface layer on the cathode side by etching or mechanical polishing. However, performing such processing after anodic bonding has the problem of complicating the process and increasing costs.
（発明が解決しようとする問題点）
本発明はこのような従来の問題点を解決して、絶縁材の
陰極側にアルカリが偏析することを防止し、アルカリ偏
析に起因する反りや絶縁材表層部の変質をなくした陽極
接合方法を目的として完成されたものである。(Problems to be Solved by the Invention) The present invention solves these conventional problems and prevents alkali from segregating on the cathode side of the insulating material, thereby preventing warping and the surface layer of the insulating material caused by alkali segregation. This was completed with the aim of creating an anodic bonding method that eliminates deterioration of the parts.
（問題点を解決するための手段）
本発明は絶縁材の片面に陽極を接触させ、その反対面に
陰極を接触させたうえ直流電圧を印加して絶縁材と陽極
とを接合させる陽極接合方法において、陰極として接合
温度で溶融状態となるアルカリ塩を用いることを特徴と
するものである。(Means for Solving the Problems) The present invention provides an anodic bonding method in which an anode is brought into contact with one side of an insulating material, a cathode is brought into contact with the opposite side, and a DC voltage is applied to join the insulating material and the anode. The method is characterized in that an alkali salt that becomes molten at the bonding temperature is used as the cathode.
（実施例）
次に本発明を図示の実施例によって更に詳細に説明する
と、（１）はガラス、セラミックスのような絶縁材であ
り、（２）は絶縁材ｆ１＋の片面に接触させた陽極であ
る。半導体圧力センサーの製造の場合においては１色縁
材（１）はガラス、陽極（２）はシリコンウェハーであ
り、陽極（２）はリード線（３）を介して２００〜２０
００ Ｖ程度の直流電源（４）のプラス側に接続されて
いる。（５）は絶縁材（１１の反対側の表面に接触させ
た陰極であるが、本発明においては陰極（５）とじて接
合温度で溶融状態となるアルカリ塩が用いられる。接合
温度は３００〜４００℃程度であり、ヒーター（６）に
よって与えられる。アルカリ塩としてはＫＮＯ＊、Ｎａ
ＮＪ等が代表的なものであり、接合温度に応じて選択す
るものとする。このようなアルカリ塩は付着性を向上さ
せるためにカオリン等の粘土と水を加えてペースト状と
し、絶縁材Ｔ１＋の表面に印刷塗布し、乾燥させて安定
した陰極（５）を形成させることが好ましいが、アルカ
リ塩を単独で用いることもできる。(Example) Next, the present invention will be explained in more detail with reference to illustrated examples. (1) is an insulating material such as glass or ceramics, and (2) is an anode in contact with one side of the insulating material f1+. be. In the case of manufacturing a semiconductor pressure sensor, the one-color edge material (1) is glass, the anode (2) is a silicon wafer, and the anode (2) is connected to a
It is connected to the positive side of a DC power supply (4) of approximately 00 V. (5) is a cathode that is in contact with the surface opposite to the insulating material (11). In the present invention, as the cathode (5), an alkali salt that becomes molten at the bonding temperature is used. The temperature is approximately 400°C and is provided by the heater (6).KNO*, Na
NJ is a typical example, and should be selected depending on the bonding temperature. In order to improve adhesion, such alkali salts can be made into a paste by adding clay such as kaolin and water, printed and coated on the surface of the insulating material T1+, and dried to form a stable cathode (5). Although preferred, alkali salts can also be used alone.
このように陰極（５）として接合温度において溶融状態
となるアルカリ塩を用いれば、陽極接合の際に絶縁材（
１１中を移動して陰極（５）側に偏析するＮａ’、Ｋ゛
、Ｌｉ９等のアルカリイオンは溶融状態にあるアルカリ
塩に溶解吸収されるため、絶縁材（１）の陰極（５）側
の表面にアルカリの偏析が生ずることはない。従って本
発明の方法により陽極接合を行えば、アルカリ偏析によ
る絶縁材の反りや変質が生ずることがなく、温度や湿度
の変動によってもゼロ点の変動がない半導体圧力センサ
ー等を得ることができる。なお絶縁材（１）に塗布され
た陰極（５）は陽極接合の完了後に削り落とせばよい。In this way, if an alkali salt that becomes molten at the bonding temperature is used as the cathode (5), the insulating material (
Alkali ions such as Na', K', Li9, etc. that move through the insulation material (1) and segregate on the cathode (5) side are dissolved and absorbed by the molten alkali salt. There is no segregation of alkali on the surface. Therefore, by performing anodic bonding by the method of the present invention, it is possible to obtain a semiconductor pressure sensor, etc., which does not cause warping or deterioration of the insulating material due to alkali segregation, and whose zero point does not fluctuate even with changes in temperature or humidity. Note that the cathode (5) applied to the insulating material (1) may be scraped off after the anodic bonding is completed.
（発明の効果）
本発明は以上の説明からも明らかなように、陰極として
接合温度で溶融状態となるアルカリ塩を用いることによ
り陰極側にアルカリが偏析することを防止したものであ
り、従来のように絶縁材の陰極側の表面をエツチング等
により除去しなくても、製品の反りやゼロ点ドリフト等
を防止できるものである。よって本発明は従来の問題点
を解決した陽極接合方法として、業界に寄与するところ
は極めて大きいものである。(Effects of the Invention) As is clear from the above description, the present invention uses an alkali salt that becomes molten at the bonding temperature as the cathode to prevent alkali from segregating on the cathode side. In this way, product warpage, zero point drift, etc. can be prevented without removing the cathode side surface of the insulating material by etching or the like. Therefore, the present invention makes an extremely large contribution to the industry as an anodic bonding method that solves the conventional problems.
第１図は本発明の陽極接合方法を説明する断面図である
。
（１）：絶縁材、（２）：陽極、（５）：陰極。
第１図FIG. 1 is a sectional view illustrating the anodic bonding method of the present invention. (1): Insulating material, (2): Anode, (5): Cathode. Figure 1
Claims (1)
触させたうえ直流電圧を印加して絶縁材と陽極とを接合
させる陽極接合方法において、陰極として接合温度で溶
融状態となるアルカリ塩を用いることを特徴とする陽極
接合方法。In the anodic bonding method, in which the anode is brought into contact with one side of the insulating material, the cathode is brought into contact with the opposite side, and a DC voltage is applied to join the insulating material and the anode, an alkali salt that becomes molten at the bonding temperature serves as the cathode. An anodic bonding method characterized by using.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6487987A JPS63229864A (en) | 1987-03-19 | 1987-03-19 | Method of joining anode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6487987A JPS63229864A (en) | 1987-03-19 | 1987-03-19 | Method of joining anode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63229864A true JPS63229864A (en) | 1988-09-26 |
| JPH0577306B2 JPH0577306B2 (en) | 1993-10-26 |
Family
ID=13270845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6487987A Granted JPS63229864A (en) | 1987-03-19 | 1987-03-19 | Method of joining anode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63229864A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02141442A (en) * | 1988-11-21 | 1990-05-30 | Mitsubishi Electric Corp | Method for anodically bonding silicon wafer and glass substrate |
-
1987
- 1987-03-19 JP JP6487987A patent/JPS63229864A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02141442A (en) * | 1988-11-21 | 1990-05-30 | Mitsubishi Electric Corp | Method for anodically bonding silicon wafer and glass substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0577306B2 (en) | 1993-10-26 |
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