JPH0577306B2 - - Google Patents
Info
- Publication number
- JPH0577306B2 JPH0577306B2 JP6487987A JP6487987A JPH0577306B2 JP H0577306 B2 JPH0577306 B2 JP H0577306B2 JP 6487987 A JP6487987 A JP 6487987A JP 6487987 A JP6487987 A JP 6487987A JP H0577306 B2 JPH0577306 B2 JP H0577306B2
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- insulating material
- alkali
- anodic bonding
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011810 insulating material Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 12
- 150000001447 alkali salts Chemical class 0.000 claims description 7
- 239000003513 alkali Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 159000000011 group IA salts Chemical class 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 239000005995 Aluminium silicate Substances 0.000 description 1
- -1 Na + Chemical class 0.000 description 1
- 235000012211 aluminium silicate Nutrition 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Ceramic Products (AREA)
- Joining Of Glass To Other Materials (AREA)
- Pressure Sensors (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はセラミツクス、ガラスのような絶縁材
の表面に、金属やシリコン等を接合するために利
用される陽極接合方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an anodic bonding method used for bonding metal, silicon, etc. to the surface of an insulating material such as ceramics or glass.
（従来の技術）
例えば半導体圧力センサー等の製造工程におい
ては、ガラス等の絶縁材の表面にシリコンウエハ
ー等を接合するために陽極接合が行われている。
この陽極接合法は米国特許第3397278号明細書等
にも示されているとおり、ガラス等の絶縁材の片
面に接合しようとする金属やシリコンウエハー等
を陽極として接触させるとともに、絶縁材の反対
側の表面に金属製の陰極を接触させ、300〜400℃
の温度条件下で直流電圧を印加することにより陽
極と絶縁材とを接合させる方法である。ところが
このような陽極接合の際には、ガラス中のNa+、
K+、Li+等のアルカリインオが陰極側に向つて移
動し、陰極と接する絶縁体の表面層にアルカリリ
ツチな層が形成され、表面層の熱膨張率を大きく
して反りを生じさせたり、アルカリリツチな表面
層の吸湿性によつて温度、湿度の変化によるゼロ
点の変動を招いたりする欠点があつた。そこでこ
のような欠点を解決するために、特開昭58−
118159号公報には陰極側のアルカリリツチな表面
層をエツチング又は機械的研摩により除去し、安
定な品質の半導体圧力センサーを製造する技術が
示されているが、陽極接合後にこのような加工を
行うことは工程が複雑化し、コスト高となる等の
問題があつた。(Prior Art) For example, in the manufacturing process of semiconductor pressure sensors and the like, anodic bonding is performed to bond a silicon wafer or the like to the surface of an insulating material such as glass.
As shown in U.S. Patent No. 3,397,278, etc., this anodic bonding method involves contacting the metal or silicon wafer to be bonded to one side of an insulating material such as glass as an anode, and the other side of the insulating material. A metal cathode is brought into contact with the surface of the
This is a method of bonding an anode and an insulating material by applying a DC voltage under a temperature condition of . However, during such anodic bonding, Na + in the glass,
Alkaline ions such as K + and Li + move toward the cathode, forming an alkali-rich layer on the surface layer of the insulator in contact with the cathode, increasing the coefficient of thermal expansion of the surface layer and causing warping. Also, the hygroscopicity of the alkali-rich surface layer caused the zero point to fluctuate due to changes in temperature and humidity. Therefore, in order to solve these drawbacks, we
Publication No. 118159 discloses a technique for manufacturing a semiconductor pressure sensor of stable quality by removing the alkali-rich surface layer on the cathode side by etching or mechanical polishing, but such processing is not performed after anodic bonding. This resulted in problems such as the process becoming more complicated and costs increasing.
（発明が解決しようとする問題点）
本発明はこのような従来の問題点を解決して、
絶縁材の陰極側にアルカリが偏析することを防止
し、アルカリ偏析に起因する反りや絶縁材表層部
の変質をなくした用極接合方法を目的として完成
されたものである。(Problems to be solved by the invention) The present invention solves these conventional problems,
This method was developed to prevent alkali from segregating on the cathode side of the insulating material, and to eliminate warping and deterioration of the surface layer of the insulating material caused by alkali segregation.
（問題点を解決するための手段）
本発明は絶縁材の片面に陰極を接触させ、その
反対面に陰極を接触させたうえ直流電圧を印加し
絶縁材と陽極とを接合させる陽極接合方法におい
て、陰極として接合温度で溶融状態となるアルカ
リ塩を用いることを特徴とするものである。(Means for Solving the Problems) The present invention provides an anodic bonding method in which a cathode is brought into contact with one side of an insulating material, a cathode is brought into contact with the opposite surface, and a DC voltage is applied to join the insulating material and the anode. , is characterized by using an alkali salt that becomes molten at the bonding temperature as the cathode.
（実施例）
次に本発明を図示の実施例によつて更に詳細に
説明すると、１はガラス、セラミツクスのような
絶縁材であり、２は絶縁材１の片面に接触させた
陽極である。半導体圧力センサーの製造の場合に
おいては絶縁材１はガラス、陰極２はシリコンウ
エハーであり、陽極２はリード線３を介して200
〜2000V程度の直流電源４のプラス側に接続され
ている。５は絶縁材１の反対側の表面に接触させ
た陰極であるが、本発明においては陰極５として
接合温度で溶融状態となるアルカリ塩が用いられ
る。接合温度は300〜400℃程度であり、ヒーター
６によつて与えられる。アルカリ塩としては
KNO3、NaNO3等が代表的なものであり、接合
温度に応じて選択するものとする。このようなア
ルカリ塩は付着性を向上させるためにカオリンの
粘土と水を加えてペースト状とし、絶縁材１の表
面に印刷塗布し、乾燥させて安定した陰極５を形
成させることが好ましいが、アルカリ塩を単独で
用いることもできる。(Embodiments) Next, the present invention will be explained in more detail with reference to the illustrated embodiments. Reference numeral 1 is an insulating material such as glass or ceramics, and 2 is an anode that is in contact with one side of the insulating material 1. In the case of manufacturing a semiconductor pressure sensor, the insulating material 1 is glass, the cathode 2 is a silicon wafer, and the anode 2 is connected to the
It is connected to the positive side of the DC power supply 4 of ~2000V. A cathode 5 is brought into contact with the opposite surface of the insulating material 1, and in the present invention, an alkali salt that becomes molten at the bonding temperature is used as the cathode 5. The bonding temperature is approximately 300 to 400°C, and is provided by the heater 6. As an alkaline salt
Typical examples include KNO 3 and NaNO 3 , and they should be selected depending on the bonding temperature. In order to improve adhesion, such an alkali salt is preferably made into a paste by adding kaolin clay and water, printed and coated on the surface of the insulating material 1, and dried to form a stable cathode 5. Alkaline salts can also be used alone.
このように陰極５として接合温度において溶融
状態となるアルカリ塩を用いれば、陽極接合の際
に絶縁材１中を移動して陰極５側に偏折する
Na+、K+、Li+等のアルカリイオンは溶融状態に
あるアルカリ塩に溶解吸収されるため、絶縁材１
の陰極５側の表面にアルカリの偏析が生ずること
はない。従つて本発明の方法により陽極接合を行
えば、アルカリ偏折による絶縁材の反りや変質が
生ずることがなく、温度や湿度の変動によつても
ゼロ点の変動がない半導体圧力センサー等を得る
ことができる。なお絶縁材１に塗布された陰極５
は陽極接合の完了後に削り落とせばよい。 If an alkali salt that becomes molten at the bonding temperature is used as the cathode 5 in this way, it will move through the insulating material 1 and deflect toward the cathode 5 during anodic bonding.
Alkali ions such as Na + , K + , and Li + are dissolved and absorbed by molten alkali salts, so insulating material 1
No alkali segregation occurs on the surface of the cathode 5 side. Therefore, by performing anodic bonding by the method of the present invention, it is possible to obtain a semiconductor pressure sensor, etc., which does not cause warping or deterioration of the insulating material due to alkali polarization, and whose zero point does not fluctuate even with changes in temperature or humidity. be able to. Note that the cathode 5 coated on the insulating material 1
can be scraped off after anodic bonding is completed.
（発明の効果）
本発明は以上の説明からも明らかなように、陰
極として接合温度で溶融状態となるアルカリ塩を
用いることにより陰極側にアルカリが偏析するこ
とを防止したものであり、従来のような絶縁材の
陰極側の表面をエツチング等により除去しなくて
も、製品の反りやゼロ点ドリフト等を防止できる
ものである。よつて本発明は従来の問題点を解決
した陽極接合方法として、業界に寄与するところ
は極めて大きいものである。(Effects of the Invention) As is clear from the above description, the present invention uses an alkali salt that becomes molten at the bonding temperature as the cathode to prevent alkali from segregating on the cathode side. It is possible to prevent product warping, zero point drift, etc. without removing the surface of the cathode side of the insulating material by etching or the like. Therefore, the present invention makes an extremely large contribution to the industry as an anodic bonding method that solves the conventional problems.
第１図は本発明の陽極接合方法を説明する断面
図である。
１：絶縁材、２：陽極、５：陰極。
FIG. 1 is a sectional view illustrating the anodic bonding method of the present invention. 1: Insulating material, 2: Anode, 5: Cathode.
Claims (1)
に陰極を接触させたうえ直流電圧を印加して絶縁
材と陽極とを接合させる陽極接合方法において、
陰極として接合温度で溶融状態となるアルカリ塩
を用いることを特徴とする陽極接合方法。1. In an anodic bonding method in which an anode is brought into contact with one side of an insulating material, a cathode is brought into contact with the opposite side, and a DC voltage is applied to join the insulating material and the anode,
An anodic bonding method characterized by using an alkali salt that becomes molten at the bonding temperature as a cathode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6487987A JPS63229864A (en) | 1987-03-19 | 1987-03-19 | Method of joining anode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6487987A JPS63229864A (en) | 1987-03-19 | 1987-03-19 | Method of joining anode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63229864A JPS63229864A (en) | 1988-09-26 |
| JPH0577306B2 true JPH0577306B2 (en) | 1993-10-26 |
Family
ID=13270845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6487987A Granted JPS63229864A (en) | 1987-03-19 | 1987-03-19 | Method of joining anode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63229864A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07112939B2 (en) * | 1988-11-21 | 1995-12-06 | 三菱電機株式会社 | Anodic bonding method of silicon wafer and glass substrate |
-
1987
- 1987-03-19 JP JP6487987A patent/JPS63229864A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63229864A (en) | 1988-09-26 |
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