JPS63221905A - Cutters - Google Patents
CuttersInfo
- Publication number
- JPS63221905A JPS63221905A JP5766387A JP5766387A JPS63221905A JP S63221905 A JPS63221905 A JP S63221905A JP 5766387 A JP5766387 A JP 5766387A JP 5766387 A JP5766387 A JP 5766387A JP S63221905 A JPS63221905 A JP S63221905A
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- base material
- ion
- protective film
- cutter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 39
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 37
- 230000001681 protective effect Effects 0.000 claims abstract description 25
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 15
- 239000010432 diamond Substances 0.000 claims abstract description 15
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 9
- 238000005520 cutting process Methods 0.000 abstract description 16
- 238000010884 ion-beam technique Methods 0.000 abstract description 14
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 230000008020 evaporation Effects 0.000 abstract description 6
- 238000001704 evaporation Methods 0.000 abstract description 6
- OKTJSMMVPCPJKN-IGMARMGPSA-N Carbon-12 Chemical compound [12C] OKTJSMMVPCPJKN-IGMARMGPSA-N 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 239000010953 base metal Substances 0.000 abstract 4
- 229910000997 High-speed steel Inorganic materials 0.000 abstract 1
- 238000005299 abrasion Methods 0.000 abstract 1
- 230000006641 stabilisation Effects 0.000 abstract 1
- 238000011105 stabilization Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 22
- 150000002500 ions Chemical class 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000007779 soft material Substances 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005261 decarburization Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 etc.) Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011121 hardwood Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000011122 softwood Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Landscapes
- Cutting Tools, Boring Holders, And Turrets (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、例えばドリル、超硬チップ、鋏、包丁、鋸
等のように、部材の切削加工、切断加工等に用いられる
刃物類に関し、特にその保護膜の改良に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to cutlery used for cutting, cutting, etc. of members, such as drills, carbide tips, scissors, kitchen knives, saws, etc. In particular, it relates to improvements in the protective film.
従来、この種の刃物類の加工性向上および長寿命化等の
ための保護膜としては、炭化チタン（Ｔｉｃ）や窒化チ
タン（ＴｉＮ）等が用いられていた。Conventionally, titanium carbide (Tic), titanium nitride (TiN), or the like has been used as a protective film for improving workability and extending the life of this type of cutlery.
ところが、例えば切削工具を例に取ると、炭化チタンは
、高硬度物質であるため高硬度材に対しては切削性が良
いが、耐摩耗性が小さい（即ち熱的に安定ではない）た
めに、ニッケル等の軟削材の切削の場合は切粉がすくい
面（第２図のすくい面４Ｓ参照）にまつわりついてそれ
で加熱され、脱炭が起きて切削性等がすぐに悪くなると
いう問題があり、逆に窒化チタンは、硬度が炭化チタン
の約半分であるため高硬度材の切削に不向きであるいう
問題がある。これらは他の刃物類についてもほぼ同様の
問題がある。However, if we take cutting tools as an example, titanium carbide is a highly hard material and has good cutting properties against hard materials, but its wear resistance is low (that is, it is not thermally stable), so it When cutting soft materials such as nickel, the problem is that chips cling to the rake face (see rake face 4S in Figure 2) and are heated, causing decarburization and immediately deteriorating machinability. On the other hand, titanium nitride has a hardness that is approximately half that of titanium carbide, making it unsuitable for cutting high-hardness materials. Almost similar problems exist with other cutlery.
そこでこの発明は、保護膜を改良することによって、硬
材から軟材まで幅広い材料に対して加工性が良好でしか
も長寿命の刃物類を提供することを目的とする。Therefore, an object of the present invention is to provide cutlery that has good workability for a wide range of materials from hard to soft materials and has a long life by improving the protective film.
第１図は、この発明に係る刃物類の基本構成を示す概略
断面図である。母材４の表面に、ダイヤモンド結晶とア
モルファス炭素とを含む炭素系の保護膜６を形成してい
る。FIG. 1 is a schematic sectional view showing the basic structure of cutlery according to the present invention. A carbon-based protective film 6 containing diamond crystals and amorphous carbon is formed on the surface of the base material 4.
母材４の材質は、用途等に応じて、例えば高速皮調、超
硬材等の種々のものが採り得る。The base material 4 may be made of various materials, such as high-speed skin tone, super hard material, etc., depending on the purpose.
また母材４の形状も、用途等に応じて、例えばドリル、
超硬チップ、鋏、包丁、鋸等のための種々のものが採り
得る。The shape of the base material 4 also varies depending on the application, such as a drill,
Various types can be used for carbide tips, scissors, knives, saws, etc.
炭素系の保護膜６を表面に形成する領域も、用途等に応
じて、例えば刃先部およびすくい面等の種々のものが採
り得る。The area where the carbon-based protective film 6 is formed on the surface may be various, such as a cutting edge portion or a rake face, depending on the application.
例えば第２図は、切削工具刃先のすくい面４Ｓに炭素系
の保護膜６を被覆した例である。For example, FIG. 2 shows an example in which the rake face 4S of the cutting tool edge is coated with a carbon-based protective film 6.
上記炭素系の保護膜６は、そこに含まれるダイヤモンド
結晶が高硬度で熱的にも安定なため、耐摩耗性かつ熱的
安定性に優れている。しかも、そこに含まれるアモルフ
ァス炭素の粒子が細かいため、表面の潤滑性（この明細
書では、表面がなめらかで滑りが良好なことを意味する
。）にも優れており、従って軟削材の切削等の場合にも
切粉の離れが良く、従来のように切粉がまつわりつくこ
とによって加熱されて切削性等が悪くなるという問題も
起こらない。The carbon-based protective film 6 has excellent wear resistance and thermal stability because the diamond crystals contained therein are highly hard and thermally stable. Furthermore, because the amorphous carbon particles contained in it are fine, it has excellent surface lubricity (in this specification, it means a smooth surface with good sliding properties), which makes it suitable for cutting soft materials. Even in such cases, the chips are easily separated, and there is no problem of the chips clinging together and heating up, resulting in poor cutting performance, etc., as in the past.
それゆえ、上記刃物類は、硬材から軟材まで幅広い材料
に対して加工性が良好でしかも長寿命となる。Therefore, the above-mentioned cutlery has good workability on a wide range of materials, from hardwood to softwood, and has a long life.
次に、上記のような炭素系の保護膜６の形成方法の一例
を第３図を参照して説明する。Next, an example of a method for forming the carbon-based protective film 6 as described above will be explained with reference to FIG.
真空容器（図示省略）内に、例えばホルダ１５に取り付
けられて前述したような母材４ （図は切削工具の場合
の例を示す）が収納されており、当該母材４に向けて蒸
発源８およびイオンｔＸ１６が配置されている。In a vacuum container (not shown), a base material 4 (the figure shows an example of a cutting tool) as described above attached to a holder 15 is housed, and an evaporation source is directed toward the base material 4. 8 and ion tX16 are arranged.
蒸発源８は、図示例のものは電子ビーム蒸発源であり、
蒸発材料１０として炭素ベレットを有しており、それを
電子ビームによって加熱蒸気化して得られる炭素１２を
母材４の表面に蒸着させることができる。もっとも、炭
素は昇華性であるため電子ビーム蒸発源では膜形成速度
が遅い場合もあり、その場合は蒸発源８として、炭素か
ら成るターゲットを不活性ガスイオンの照射やマグネト
ロン放電によってスパッタさせる方式のもの、あるいは
炭素から成るカソードにおける真空アーク放電によって
炭素を蒸発させる方式のもの等としても良く、更にはこ
れらを併用しても良い。The evaporation source 8 in the illustrated example is an electron beam evaporation source,
A carbon pellet is used as the evaporation material 10, and carbon 12 obtained by heating and vaporizing it with an electron beam can be evaporated onto the surface of the base material 4. However, since carbon is sublimable, the film formation rate may be slow when using an electron beam evaporation source. It is also possible to use a method in which carbon is evaporated by vacuum arc discharge at a cathode made of carbon, or a combination of these may be used.
イオン源１６としても特定の方式のものに限定されるも
のではないが、例えばプラズマ閉込めにカスプ磁場を用
いるバケット型イオン源が好ましく、それによれば供給
されたガスＧをイオン化して均一で大面積のイオンビー
ム１Ｂを母材４の表面に向けて照射することができるの
で、一度に大面積の処理が可能になる。尚、１４は母材
４上に形成される膜の膜厚モニタである。Although the ion source 16 is not limited to a specific type, for example, a bucket type ion source that uses a cusp magnetic field for plasma confinement is preferable. Since the surface of the base material 4 can be irradiated with the ion beam 1B having a large area, a large area can be treated at one time. In addition, 14 is a film thickness monitor of the film formed on the base material 4.
イオン源１６に供給するガスＧとしては、後述するよう
な理由から、不活性ガス（例えばヘリウムガス、アルゴ
ンガス等）、炭化水素系ガス（例えばメタンガス、エタ
ンガス等）および有機化合物系ガス（例えばアセトン等
）の内の少なくとも一種、即ちこれらの単一ガスまたは
混合ガスを用いる。The gas G supplied to the ion source 16 may include inert gas (for example, helium gas, argon gas, etc.), hydrocarbon gas (for example, methane gas, ethane gas, etc.), and organic compound gas (for example, acetone gas, etc.) for the reasons described later. etc.), i.e., a single gas or a mixture thereof.
膜形成に際しては、真空容器内を例えば１０−５〜１Ｏ
−７Ｔｏｒｒ程度にまで排気した後、蒸発源８からの炭
素１２を母材４上に蒸着させるのと同時に、またはそれ
と交互に、あるいは間歇的に、イオン源工６からのイオ
ンビームＩ８を母材４に向けて照射する。その際、母材
４に蒸着させる炭素量に対する照射イオン量の割合、即
ちイオン／炭素は、例えば０．１％〜１００％程度の範
囲内にする。When forming a film, the temperature inside the vacuum container is, for example, 10-5 to 1O.
After evacuation to about -7 Torr, the ion beam I8 from the ion source 6 is applied to the base material simultaneously with, alternately with, or intermittently depositing the carbon 12 from the evaporation source 8 onto the base material 4. Irradiate toward 4. At this time, the ratio of the amount of irradiated ions to the amount of carbon deposited on the base material 4, ie, ions/carbon, is set within a range of, for example, about 0.1% to 100%.
その結果、例えば第１図あるいは第２図に示すように、
母材４の表面に、ダイヤモンド結晶とアモルファス炭素
とがほぼ偏在することなく混在した炭素系の保護膜６が
形成される。これは、イオン照射によって、母材４に蒸
着された炭素がアモルファス化する一方、照射イオンが
、母材４に蒸着されたグラフプイト構造の炭素をダイヤ
モンドに結晶成長させるための核形成エネルギー供給源
として作用するからであると考えられる。As a result, for example, as shown in Figure 1 or Figure 2,
A carbon-based protective film 6 is formed on the surface of the base material 4, in which diamond crystals and amorphous carbon are mixed without being unevenly distributed. This is because the ion irradiation causes the carbon deposited on the base material 4 to become amorphous, while the irradiated ions act as a nucleation energy supply source to crystallize the graphite-structured carbon deposited on the base material 4 into diamond. This is thought to be because it works.
その場合、母材４の表面の所定領域のみに炭素系の保護
膜６を形成する必要がある場合には、その領域のみが露
出するようなマスクを用いる等すれば良い。In that case, if it is necessary to form the carbon-based protective film 6 only on a predetermined region of the surface of the base material 4, a mask that exposes only that region may be used.
尚、ガスＧに上記のような種類のものを用いるのは、不
活性ガスを用いれば、イオンビーム１８として照射され
る不活性元素は反応性が乏しいため、不純物混入の無い
良質の炭素系の保護膜６が得られるからであり、炭化水
素系ガスや有機化合物系ガスを用いれば、蒸着炭素にそ
れと同系の、即ち炭素系のイオンビーム１８が照射され
るため、それによって蒸着炭素をより励起し易くなるか
らであり、またこれらの混合ガスを用いれば、上記のよ
うな各作用を併合した結果を得ることができるからであ
る。The reason why the above-mentioned gas G is used is because if an inert gas is used, the inert element irradiated as the ion beam 18 has poor reactivity. This is because a protective film 6 can be obtained, and if a hydrocarbon-based gas or an organic compound-based gas is used, the vapor-deposited carbon is irradiated with an ion beam 18 of the same type as that, that is, a carbon-based ion beam 18, thereby further exciting the vapor-deposited carbon. This is because it becomes easier to perform the operation, and also because if these mixed gases are used, a result that combines the above-mentioned effects can be obtained.
また、ガスＧとして、上記のような単一ガスまたは混合
ガスに、ケイ素系ガス（例えばモノシランガス、ジシラ
ンガス等）および水素ガスの内の少なくとも一方を混合
したガスを用いても良く、そのようにすれば、イオンビ
ーム１８として照射されたケイ素はＳＰ３混成軌道しか
取らず、蒸着炭素中におけるグラファイトの析出を抑制
すると共にダイヤモンド形成に有効に作用するため、ま
たイオンビーム１８として照射された水素は、蒸着炭素
中のグラファイトをメタン、エタン等の炭化水素系のガ
スとして取り除く作用をするため、ダイヤモンド結晶が
より効果的に形成されるようになる。Further, as the gas G, a gas obtained by mixing at least one of a silicon-based gas (for example, monosilane gas, disilane gas, etc.) and hydrogen gas with the above-mentioned single gas or mixed gas may be used. For example, silicon irradiated as the ion beam 18 takes only SP3 hybrid orbits, which suppresses the precipitation of graphite in the vapor-deposited carbon and effectively acts on diamond formation. Since it acts to remove graphite from carbon as a hydrocarbon gas such as methane or ethane, diamond crystals can be formed more effectively.
上記の場合、炭素系の保護膜６中におけるダイヤモンド
結晶とアモルファス炭素との割合は、前述した母材４に
入射させるイオン／炭素の割合、イオン源１６に供給す
る上記のような各種ガスの混合比、イオンビーム１８の
エネルギー等ノ条件によって変化するので、これらの条
件によって所望のものに制御することができる。In the above case, the ratio of diamond crystals to amorphous carbon in the carbon-based protective film 6 is determined by the ratio of ions/carbon incident on the base material 4 described above, and the mixture of various gases as described above supplied to the ion source 16. Since it changes depending on conditions such as the ratio and the energy of the ion beam 18, it can be controlled to a desired value based on these conditions.
尚、イオンビーム１８のエネルギーは、その照射によっ
て炭素系の保護膜６や母材４の内部にダメージ（欠陥部
）が発生するのを極力少なくする観点から、１０ＫｅＶ
程度以下の低エネルギー、より好ましくは数百ｅＶ程度
以下にするのが良く、またその下限は特にないが、イオ
ン源１６からイオンビーム１８を引き出せる限度から、
現実的には１０ｅＶ程度以上になる。Note that the energy of the ion beam 18 is set to 10 KeV from the viewpoint of minimizing damage (defects) caused inside the carbon-based protective film 6 and base material 4 due to the irradiation.
It is preferable to set the energy to a level lower than the ion source 16, more preferably a few hundred eV or lower, and there is no particular lower limit, but from the limit that the ion beam 18 can be extracted from the ion source 16,
In reality, it will be about 10 eV or more.
また、母材４に対するイオンビーム１８の照射角度（即
ち母材４の表面に対する垂線との間の角度）は、０°〜
５０°程度の範囲内にするのが好ましく、そのようにす
れば、イオンビーム１８の照射に伴う蒸着炭素のスパッ
タを小さく抑えることができる。この角度は、例えば図
示例のような切削工具では刃先のすくい面４Ｓに対する
角度θとする。Further, the irradiation angle of the ion beam 18 to the base material 4 (that is, the angle between the perpendicular to the surface of the base material 4) is 0° to
It is preferable to set the angle within a range of about 50°, and by doing so, it is possible to suppress sputtering of the vapor deposited carbon due to irradiation with the ion beam 18. This angle is, for example, the angle θ of the cutting edge with respect to the rake surface 4S in a cutting tool like the illustrated example.
また、膜形成時には、必要に応じて母材４を加熱手段（
図示省略）によって例えば数百℃程度まで加熱、あるい
は冷却手段（図示省略）によって例えば室温〜１００℃
程度以内になるように冷却しても良く、加熱すれば熱励
起によってダイヤモンド形成の反応を促進することがで
きると共に、炭素系の保護膜６中に発生する欠陥部を成
膜中に除去することができ、また冷却すればイオンビー
ム１８の照射による母材４への熱的影響を防止すること
ができる。In addition, during film formation, the base material 4 may be heated by heating means (
heating the temperature to, for example, several hundred degrees Celsius by using a cooling means (not shown), or heating it to a temperature ranging from room temperature to 100 degrees Celsius by cooling means (not shown).
The carbon-based protective film 6 may be cooled to within a certain range, or heated to promote the reaction of diamond formation through thermal excitation, and to remove defects occurring in the carbon-based protective film 6 during film formation. In addition, cooling can prevent thermal effects on the base material 4 due to irradiation with the ion beam 18.
上記方法の特徴を列挙すれば次の通りである。The features of the above method are listed below.
■ ＣＶＤ法のように母材４を高温（例えば８００℃〜
１０００°Ｃ程度）に加熱する必要がなく、低温処理が
可能であるため、母材４が脆性素化を起こす恐れがない
。■ As in the CVD method, the base material 4 is heated to a high temperature (e.g. 800℃~
Since there is no need to heat the base material 4 to a temperature of about 1000° C. and low-temperature treatment is possible, there is no fear that the base material 4 will become brittle.
■ イオンビーム照射を併用するため、イオンの押込み
（ノックオン）作用により母材と炭素系保護膜との混合
層の形成が期待でき、母材４に対する密着性の良い炭素
系の保護膜６が得られる。■ Since ion beam irradiation is used in combination, a mixed layer of the base material and carbon-based protective film can be expected to be formed due to the knock-on effect of the ions, resulting in a carbon-based protective film 6 with good adhesion to the base material 4. It will be done.
■ 炭素系の保護膜６中のダイヤモンド結晶とアモルフ
ァス炭素との割合が、前述したイオン／炭素の割合等の
条件によって制御可能であり、しかもそのような条件の
制御は容易であるので、被覆する炭素系の保護膜６の耐
摩耗性、潤滑性等の機械的特性を目的等に応じて容易に
変えることができる。■ The ratio of diamond crystals to amorphous carbon in the carbon-based protective film 6 can be controlled by conditions such as the ion/carbon ratio mentioned above, and since such conditions are easy to control, the coating is Mechanical properties such as wear resistance and lubricity of the carbon-based protective film 6 can be easily changed depending on the purpose.
以上のようにこの発明に係る刃物類は、母材の表面に、
ダイヤモンド結晶とアモルファス炭素とを含む炭素系の
保護膜を形成しているため、耐摩耗性、熱的安定性およ
び潤滑性に優れており、硬材から軟材まで幅広い材料に
対して加工性が良好でしかも長寿命となる。As described above, the cutlery according to the present invention has
Because it forms a carbon-based protective film containing diamond crystals and amorphous carbon, it has excellent wear resistance, thermal stability, and lubricity, and can process a wide range of materials from hard to soft materials. It is good and has a long life.
第１図は、この発明に係る刃物類の基本構成を示す概略
断面図である。第２図は、この発明の一実施例に係る切
削工具の刃先を部分的に示す概略断面図である。第３図
は、ダイヤモンド結晶とアモルファス炭素とを含む炭素
系の保護膜の形成に用いられる装置の一例を示す概略図
である。
４・・・母材、６・・・ダイヤモンド結晶とアモルファ
ス炭素とを含む炭素系の保護膜。FIG. 1 is a schematic sectional view showing the basic structure of cutlery according to the present invention. FIG. 2 is a schematic sectional view partially showing the cutting edge of a cutting tool according to an embodiment of the present invention. FIG. 3 is a schematic diagram showing an example of an apparatus used for forming a carbon-based protective film containing diamond crystals and amorphous carbon. 4... Base material, 6... Carbon-based protective film containing diamond crystals and amorphous carbon.
Claims (1)
炭素とを含む炭素系の保護膜を形成していることを特徴
とする刃物類。(1) Cutlery characterized by forming a carbon-based protective film containing diamond crystals and amorphous carbon on the surface of the base material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5766387A JPS63221905A (en) | 1987-03-11 | 1987-03-11 | Cutters |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5766387A JPS63221905A (en) | 1987-03-11 | 1987-03-11 | Cutters |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63221905A true JPS63221905A (en) | 1988-09-14 |
Family
ID=13062141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5766387A Pending JPS63221905A (en) | 1987-03-11 | 1987-03-11 | Cutters |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63221905A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020069625A (en) * | 2001-02-27 | 2002-09-05 | 프리시젼다이아몬드 주식회사 | CVD (chemical vapor deposition) diamond pencil and cutter |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6147903A (en) * | 1984-08-16 | 1986-03-08 | Furukawa Electric Co Ltd:The | Optical fiber surplus length containing tool |
| JPS61109628A (en) * | 1984-10-29 | 1986-05-28 | Toshiba Tungaloy Co Ltd | Diamond coated tool |
-
1987
- 1987-03-11 JP JP5766387A patent/JPS63221905A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6147903A (en) * | 1984-08-16 | 1986-03-08 | Furukawa Electric Co Ltd:The | Optical fiber surplus length containing tool |
| JPS61109628A (en) * | 1984-10-29 | 1986-05-28 | Toshiba Tungaloy Co Ltd | Diamond coated tool |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020069625A (en) * | 2001-02-27 | 2002-09-05 | 프리시젼다이아몬드 주식회사 | CVD (chemical vapor deposition) diamond pencil and cutter |
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