JPS63215592A - Production of compound semiconductor - Google Patents
Production of compound semiconductorInfo
- Publication number
- JPS63215592A JPS63215592A JP4497987A JP4497987A JPS63215592A JP S63215592 A JPS63215592 A JP S63215592A JP 4497987 A JP4497987 A JP 4497987A JP 4497987 A JP4497987 A JP 4497987A JP S63215592 A JPS63215592 A JP S63215592A
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- gas
- carbon
- reducing gas
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 150000001875 compounds Chemical class 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000007789 gas Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000011261 inert gas Substances 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims abstract description 7
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims abstract description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 239000002360 explosive Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052799 carbon Inorganic materials 0.000 abstract description 13
- 238000004880 explosion Methods 0.000 abstract description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 239000003575 carbonaceous material Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000008014 freezing Effects 0.000 description 2
- 238000007710 freezing Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000004925 denaturation Methods 0.000 description 1
- 230000036425 denaturation Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は化合物半導体の液体封止回転引上げ法における
改良された化合物半導体の製造方法に関するものである
。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to an improved method for manufacturing compound semiconductors in a liquid-filled rotary pulling method for compound semiconductors.
化合物半導体例えばＧａＡｓ、Ｉｎｐなどの製造方法と
してＢオＯ１などの液体を封止して回転しながら単結晶
を引上げるいわゆる液体封止回転引上げ法（ＬＥＣ法）
がある、この装置は原料とるつぼ原料を溶融するヒータ
ー、適正な温度環境を作る断熱材、雰囲気ガス、全体を
包むチャンバー、シードおよびるつぼの回転、移動装置
などから構成されている。このうちヒーター、断熱材は
加工性、耐熱性、コストなどの点からグラファイトカー
ボンが用いられている。結晶成長は、Ｎ２、Ａｒなどの
不活性ガス圧下で行なわれるがチャンバー内にはガス置
換した後にも残留酸素が９９１１１以上の濃度で存在し
、高温下でカーボンと反応してＣｏ、Ｃｏ、が発生し、
Ｇｏ、Ｃｏ、がＧａＡｓのメルトと反応して炭素がメル
ト中にとり込まれる。As a manufacturing method for compound semiconductors such as GaAs and InP, the so-called liquid-sealed rotational pulling method (LEC method) involves sealing a liquid such as BO1 and pulling a single crystal while rotating.
This equipment consists of a heater that melts the raw materials and the crucible raw materials, a heat insulator that creates an appropriate temperature environment, an atmospheric gas, a chamber that envelops the whole, and equipment that rotates and moves the seeds and crucible. Among these, graphite carbon is used for heaters and heat insulators due to its workability, heat resistance, and cost. Crystal growth is performed under the pressure of an inert gas such as N2 or Ar, but residual oxygen exists in the chamber at a concentration of 99111 or higher even after gas replacement, and it reacts with carbon at high temperatures, resulting in Co, Co, etc. occurs,
Go, Co, and react with the GaAs melt to incorporate carbon into the melt.
この炭素はＧａＡｓ中ではアクセプタとして作用し、ｐ
ｐｍの濃度になると熱変性や、イオン注入後の活性化率
の悪化などの悪影響をおよぼす問題があった。This carbon acts as an acceptor in GaAs, p
When the concentration reaches pm, there are problems such as thermal denaturation and deterioration of the activation rate after ion implantation.
そこで装置に使用されるカーボンを凍らすこと、残留酸
素を減少させるなどの観点から■カーボン材を減らすこ
と、■カーボン材料をウールなどからソリッド材に変更
すること、■カーボン材表面をＢＮ、Ａ／！Ｎなどでコ
ーティングすること、■チャンバー機密性を高めること
などの対策が講じられている。Therefore, from the viewpoints of freezing the carbon used in the device and reducing residual oxygen, it is necessary to reduce the amount of carbon material, change the carbon material from wool etc. to solid material, and change the surface of the carbon material to BN, A, etc. /! Countermeasures have been taken, such as coating with N, etc., and increasing chamber confidentiality.
しかしながら上記の■カーボン材を凍らすことは結晶成
長上の適正な温度環境を得るためには限界があり大巾に
減らすことができない。■のカーボン材料の変更も上記
の理由により限界がある。However, freezing the carbon material described above has a limit in obtaining an appropriate temperature environment for crystal growth, and cannot be reduced significantly. There is also a limit to the change in the carbon material (2) due to the above reasons.
■のカーボン表面のコーティングは、ヒーター電極など
不可能な部分があり、またＢＮ、ＡＩＮなどのコーティ
ングは高価であるため大きな部品には特に困難である。Coating the surface of carbon (2) is impossible in some parts, such as heater electrodes, and coating with BN, AIN, etc. is expensive, so it is particularly difficult to coat large parts.
■チャンバーは高圧容器であるため超高真空装置程度の
高機密性を得ることは無理であるなど、いずれにおいて
も困難であることが判った。(2) Since the chamber is a high-pressure container, it was found to be difficult in both cases, such as it being impossible to achieve the same level of confidentiality as an ultra-high vacuum device.
本発明者は、酸素と炭素を減少させることが困難である
以上、これが存在してもＣｏ、Ｃｏｚ、の濃度を減少さ
せるべく検討した結果、還元性の気体を不活性ガスに混
合させることにより、Ｃｏ。Since it is difficult to reduce oxygen and carbon, the inventor investigated how to reduce the concentration of Co and Coz even if they exist, and found that by mixing a reducing gas with an inert gas, , Co.
Ｃｏｘ、ｆ４度を減少させ、インゴットの炭素濃度を著
しく低減できる化合物半導体の製造方法を開発したもの
である。We have developed a method for manufacturing compound semiconductors that can significantly reduce the carbon concentration of ingots by reducing Cox and f4 degrees.
〔問題点を解決するための手段および作用〕本発明は上
記に鑑みなされたもので化合物半導体の液体封止回転引
上げ法において製造装置内に導入する不活性ガスに還元
性の気体を混合して結晶成長を行なうことを特徴とする
化合物半導体の製造方法である。[Means and effects for solving the problems] The present invention has been made in view of the above, and is a method for mixing a reducing gas with an inert gas introduced into a manufacturing apparatus in a liquid-sealed rotational pulling method for compound semiconductors. This is a compound semiconductor manufacturing method characterized by performing crystal growth.
また本発明は上記の還元性気体として、水素、アンモニ
アの他、アルシンなどが一使用できるものであり、還元
性気体の混合比は爆発限界以下とするものである。すな
わち本発明は、製造装置内に導入するＡ「、Ｎ２などの
不活性ガスに水素、アンモニアなどの気体を混合するこ
とによりＣ０１Ｃｏｔ、の濃度を減少せしめて結晶成長
中のインゴットに混入する炭素量を低減するものである
。Further, in the present invention, hydrogen, ammonia, arsine, etc. can be used as the above-mentioned reducing gas, and the mixing ratio of the reducing gases is set to be below the explosion limit. That is, the present invention reduces the concentration of COt by mixing a gas such as hydrogen or ammonia with an inert gas such as N2 introduced into the manufacturing equipment, thereby reducing the amount of carbon mixed into the ingot during crystal growth. This is to reduce the
しかして本発明において還元性気体とは水素、アンモニ
アの他、アルシンなどが使用できる。また還元性気体の
混合比は水素は５％以下とすることが好ましく５％を越
えると爆発のおそれがある。In the present invention, the reducing gas includes hydrogen, ammonia, arsine, and the like. Further, the mixing ratio of the reducing gas is preferably 5% or less for hydrogen, and if it exceeds 5%, there is a risk of explosion.
アンモニアの場合は１６％以下が好ましい。In the case of ammonia, it is preferably 16% or less.
以下に本発明の一実施例について説明する。 An embodiment of the present invention will be described below.
液体封止回転引上げ装置によりＧａＡｓのチャージ量を
１．４ｋｇとし、不活性ガスのＡｒに予めＮ２ガスを０
．３％、０．５％の体積比で混合したウォーミンガスを
上記装置内に導入し、圧力１０気圧とし、成長速度７ｍ
／ｈとして、外径５５ｍφ、長さ８５−１引上げ方向＜
１００＞のＧａＡｓのインゴットを製造した。また比較
のためＮ２ガスを混合しない従来の方法により上記条件
で２本のインゴットを製造し、これらのインゴットの炭
素量を赤外吸光法により測定した。なお濃度換算はＢｒ
ｏｚｅｌらのαΔ＝ １ ｃｒａ−”−２，４ＸＩＯ”
ｃｍ−’（ａｔ７７” Ｋ）を用いた。この結果を第１
表に示す。The amount of GaAs charged was set to 1.4 kg using a liquid sealed rotary pulling device, and N2 gas was added to the inert gas Ar in advance.
．． Warming gas mixed at a volume ratio of 3% and 0.5% was introduced into the above apparatus, the pressure was 10 atm, and the growth rate was 7 m.
/h, outer diameter 55 mφ, length 85-1 pulling direction <
100> GaAs ingots were produced. For comparison, two ingots were manufactured under the above conditions using a conventional method without mixing N2 gas, and the carbon content of these ingots was measured by infrared absorption spectroscopy. The concentration conversion is Br
αΔ= 1 cra−”−2,4XIO” of ozel et al.
cm-'(at77"K). This result was used as the first
Shown in the table.
第 １ 表
第１表から明らかなように本発明方法によれば従来の方
法によるものよりインゴットの炭素濃度が１１５〜１／
９に減少することが確認された。Table 1 As is clear from Table 1, according to the method of the present invention, the carbon concentration of the ingot is 115 to 1/2% lower than that of the conventional method.
It was confirmed that the number decreased to 9.
なお本実施例ではＮ２の濃度を高いもので０．５％とし
たものでチャンバー材質は５ＵＳ３１６を用いたがＮ２
濃度がより高い場合は水素脆性を考慮した材料を用いる
必要がある。Note that in this example, the concentration of N2 was high, 0.5%, and the chamber material was 5US316, but N2
If the concentration is higher, it is necessary to use materials that take hydrogen embrittlement into consideration.
以上に説明したように本発明は成長装置内の雰囲気ガス
に水素などの還元性気体を混合するだけの簡単な方法に
より半導体インゴットの炭素濃度を著しく低減させるこ
とができたものでこれに要する費用も安価であり、工業
上顕著な効果を奏するものである。As explained above, the present invention makes it possible to significantly reduce the carbon concentration of a semiconductor ingot by a simple method of mixing a reducing gas such as hydrogen into the atmospheric gas in the growth apparatus, and the cost required for this. It is also inexpensive and has significant industrial effects.
Claims (3)
造装置内に導入する不活性ガスに還元性の気体を混合し
て結晶成長を行なうことを特徴とする化合物半導体の製
造方法。(1) A method for manufacturing a compound semiconductor, which is characterized in that crystal growth is performed by mixing a reducing gas with an inert gas introduced into a manufacturing apparatus in a liquid-sealed rotational pulling method for compound semiconductors.
どであることを特徴とする特許請求の範囲第１項記載の
化合物半導体の製造方法。(2) The method for manufacturing a compound semiconductor according to claim 1, wherein the reducing gas is hydrogen, ammonia, arsine, or the like.
特徴とする特許請求の範囲第１項または第２項記載の化
合物半導体の製造方法。(3) The method for manufacturing a compound semiconductor according to claim 1 or 2, wherein the mixing ratio of the reducing gas is below the explosive limit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4497987A JPS63215592A (en) | 1987-02-27 | 1987-02-27 | Production of compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4497987A JPS63215592A (en) | 1987-02-27 | 1987-02-27 | Production of compound semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63215592A true JPS63215592A (en) | 1988-09-08 |
Family
ID=12706586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4497987A Pending JPS63215592A (en) | 1987-02-27 | 1987-02-27 | Production of compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63215592A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5041186A (en) * | 1987-11-30 | 1991-08-20 | Kabushiki Kaisha Toshiba | Method for manufacturing compound semiconductor single crystals using a hydrogen monitor gas |
| JP2008077625A (en) * | 2006-09-18 | 2008-04-03 | Samsung Electronics Co Ltd | System and method for processing user defined extended operation |
-
1987
- 1987-02-27 JP JP4497987A patent/JPS63215592A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5041186A (en) * | 1987-11-30 | 1991-08-20 | Kabushiki Kaisha Toshiba | Method for manufacturing compound semiconductor single crystals using a hydrogen monitor gas |
| JP2008077625A (en) * | 2006-09-18 | 2008-04-03 | Samsung Electronics Co Ltd | System and method for processing user defined extended operation |
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