JPS63215086A - Magnetoelectric transducer - Google Patents
Magnetoelectric transducerInfo
- Publication number
- JPS63215086A JPS63215086A JP62049210A JP4921087A JPS63215086A JP S63215086 A JPS63215086 A JP S63215086A JP 62049210 A JP62049210 A JP 62049210A JP 4921087 A JP4921087 A JP 4921087A JP S63215086 A JPS63215086 A JP S63215086A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- magnetoelectric
- magnetoelectric transducer
- insulating substrate
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 230000001681 protective effect Effects 0.000 claims abstract description 9
- 238000006243 chemical reaction Methods 0.000 claims abstract description 6
- 239000011347 resin Substances 0.000 abstract description 9
- 229920005989 resin Polymers 0.000 abstract description 9
- 239000010409 thin film Substances 0.000 abstract description 8
- 239000010408 film Substances 0.000 abstract description 7
- 229920001187 thermosetting polymer Polymers 0.000 abstract description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 4
- 229910000679 solder Inorganic materials 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 abstract 2
- 229910017709 Ni Co Inorganic materials 0.000 abstract 1
- 229910003267 Ni-Co Inorganic materials 0.000 abstract 1
- 229910003262 Ni‐Co Inorganic materials 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 238000000605 extraction Methods 0.000 description 5
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、主にモータの回転速度、回転角の検出等に利
用される磁電変換素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a magnetoelectric transducer mainly used for detecting the rotation speed and rotation angle of a motor.
従来の技術
従来、この種の磁電変換素子は、第２図に示すような構
造であった。まずガラス等の絶縁基板１にＮ１−Ｃｏ薄
膜２を真空蒸着法またはスパッタリング法により形成す
る。次に７オトエソチングにより所望のパターンに形成
後、Ｎｉ−Ｃｏ薄膜のうち取り出し電極となる電極取出
部２ａｉ除く部分に保護膜３を形成する。次にリードフ
レーム４を電極取出部２ａ−にハンダ付けし、電極取出
部２１Ｌおよび・・ンダ接合部を熱硬化性樹脂５により
被覆して磁電変換素子とするものである。2. Description of the Related Art Conventionally, this type of magnetoelectric transducer has had a structure as shown in FIG. First, an N1-Co thin film 2 is formed on an insulating substrate 1 made of glass or the like by vacuum evaporation or sputtering. Next, after forming a desired pattern by etching seven times, a protective film 3 is formed on a portion of the Ni--Co thin film excluding the electrode extraction portion 2ai that will become an extraction electrode. Next, the lead frame 4 is soldered to the electrode extraction portion 2a-, and the electrode extraction portion 21L and the solder joint portion are covered with a thermosetting resin 5 to form a magnetoelectric transducer.
この種の磁電変換素子の応用を次に説明する。Applications of this type of magnetoelectric transducer will be described below.
第３図において、６はモータにより駆動され回転するロ
ータである。その外周面に微細なピッチで着磁された磁
石が形成されている。ロータ６が回転すると、着磁部８
近傍の磁界が変化するので、その一箇所に磁電変換素子
７を配置することによって磁界の変化を電気的信号とし
て回転速度に応じた周波数で取り出すことができ、回転
速度が検出できるものである。検出精度を向上させるた
めに、磁石と磁電変換素子７との間のギャップも小さく
することが要求され、精度の高いロータ６に関しては０
．１Ｈ以下のギャップも近年必要とされる様になってき
ている。In FIG. 3, 6 is a rotor driven and rotated by a motor. Magnets magnetized at fine pitches are formed on its outer peripheral surface. When the rotor 6 rotates, the magnetized part 8
Since the magnetic field in the vicinity changes, by arranging the magnetoelectric conversion element 7 at one location, changes in the magnetic field can be extracted as an electrical signal at a frequency corresponding to the rotation speed, and the rotation speed can be detected. In order to improve detection accuracy, it is required to reduce the gap between the magnet and the magnetoelectric transducer 7, and for the highly accurate rotor 6,
．． In recent years, gaps of 1H or less have also become necessary.
発明が解決しようとする問題点
従来の構造では、電極部分を覆う樹脂５の寸法を規定す
ることが難しく、樹脂５が規定寸法よりもセンサ側には
み出す可能性があり、そのような場合には磁界発生用ロ
ータと磁電変換素子のギャップを小さくすることができ
ない等の問題があった。Problems to be Solved by the Invention In the conventional structure, it is difficult to specify the dimensions of the resin 5 that covers the electrode portion, and there is a possibility that the resin 5 protrudes beyond the specified dimensions toward the sensor side. There have been problems such as the inability to reduce the gap between the magnetic field generating rotor and the magnetoelectric transducer.
本発明は、このような問題点を解決するもので磁電変換
素子のセンサ面上に保護膜以外の凸出部を無くすことを
目的とするものである。The present invention is intended to solve these problems and aims to eliminate any protrusions other than the protective film on the sensor surface of the magnetoelectric transducer.
問題点を解決するための手段
この問題点を解決するために、本発明は、スルホール等
を有する絶縁基板と、この絶縁基板上に形成された磁電
変換部と、この磁電変換部上に形成した保護膜と、前記
磁電変換部に前記スルホール等を介して基板裏面にて導
通をもたせたリード部とを備えたものである。Means for Solving the Problem In order to solve this problem, the present invention provides an insulating substrate having through holes etc., a magnetoelectric converter formed on the insulating substrate, and a magnetoelectric converter formed on the magnetoelectric converter. The device includes a protective film and a lead portion that provides conduction to the magnetoelectric conversion portion on the back surface of the substrate via the through hole or the like.
作用
この構造により、磁電変換素子のロータに近接する面上
には極めて薄い保護膜を除いては、障害となり得るもの
は存在せず、電極部分を種う樹脂の位置１寸法等にかか
わらず、ロータとセンサのギャップを最適にして磁電変
換素子を実装することが可能となる。Function: Due to this structure, there is no obstacle on the surface of the magnetoelectric transducer near the rotor, except for an extremely thin protective film, and regardless of the position, size, etc. of the resin that forms the electrode part, It becomes possible to mount a magnetoelectric transducer by optimizing the gap between the rotor and the sensor.
実施例
第１図は本発明の一実施例による磁電変換素子の断面図
である。まず、アルミナ等の絶縁基板９にＡｇ−Ｐｄ等
によりスルホール電極１０ｉ形成する。この基板９上に
Ｎ１−Ｇｏ薄膜１１を真空蒸着法またはスパッタリング
法により形成する。次にフォトエツチング法により、所
望のパターンに形成後、Ｎｉ−Ｃｏ薄膜１１上に保護膜
１２を形成する。次にリードフレーム１３′にスルホー
ル電極１０の基板裏面側１０１Ｌにハンダ付けし、基板
裏面側１０＆およびハンダ接合部を熱硬化性樹脂１４に
より被覆する。Embodiment FIG. 1 is a sectional view of a magnetoelectric transducer according to an embodiment of the present invention. First, through-hole electrodes 10i are formed using Ag-Pd or the like on an insulating substrate 9 made of alumina or the like. An N1--Go thin film 11 is formed on this substrate 9 by vacuum evaporation or sputtering. Next, a desired pattern is formed by photoetching, and then a protective film 12 is formed on the Ni--Co thin film 11. Next, the through-hole electrode 10 is soldered to the back side 101L of the substrate on the lead frame 13', and the back side 10& of the substrate and the solder joint portion are covered with a thermosetting resin 14.
なお、本実施例において、絶縁基板９はアルミナ等、ス
ルホール電極１ｏはムｇ−Ｐ ｄ等、センサ薄膜はＮ１
−Ｇｏ、また保護膜塗料は熱硬化性樹脂としたが、同様
な目的を達成できるものであれば何でもよい。In this embodiment, the insulating substrate 9 is made of alumina or the like, the through-hole electrode 1o is made of Mug-Pd or the like, and the sensor thin film is made of N1.
-Go and a thermosetting resin was used as the protective film coating, but any material may be used as long as it can achieve the same purpose.
発明の効果
以上のように本発明によれば、基板表面に形成された磁
電変換部とリード部とはスルホール等を介して導通を得
ることができるため、リードフレームを基板裏面にハン
ダ付けでき、センサ面には、リードフレームおよびハン
ダ接合部を被覆する樹脂等の凸出物が存在せず、磁界発
生用ロータ等とセンサのギャップを最適にして、磁電変
換素子を実装することができるという効果が得られる。Effects of the Invention As described above, according to the present invention, conduction can be obtained between the magnetoelectric conversion section formed on the surface of the substrate and the lead section through the through hole, etc., so that the lead frame can be soldered to the back surface of the substrate. There are no protruding objects such as resin covering the lead frame and solder joints on the sensor surface, and the gap between the magnetic field generating rotor, etc. and the sensor can be optimized and the magnetoelectric conversion element can be mounted. is obtained.
また、磁電変換素子の大きさも、従来電極取出部分がロ
ータ厚みよりはみ出していたものが、本発明によると容
易にロータ厚みより小さくすることができるので小型化
され、高密度実装できるという特長をも有するものであ
る。In addition, the size of the magnetoelectric transducer can be made smaller than the thickness of the rotor, whereas in the past, the electrode extraction part protruded beyond the thickness of the rotor, according to the present invention. It is something that you have.
第１図は本発明−の一実施例による磁電変換素子を示す
断面図、第２図は従来例を示す断面図、第３図は磁電変
換素子の使用方法の一例を示す概略図である。
９・・・・・・アルミナ基板、１ｏ・・・・・・スルホ
ール電極、１１・・・・・・Ｎ１−Ｇｏ薄膜、１２・・
・・・・保護膜、１３・・・・・・リードフレーム、１
４・・・・・・熱硬化性樹脂。FIG. 1 is a sectional view showing a magnetoelectric transducer according to an embodiment of the present invention, FIG. 2 is a sectional view showing a conventional example, and FIG. 3 is a schematic diagram showing an example of a method of using the magnetoelectric transducer. 9...Alumina substrate, 1o...Through hole electrode, 11...N1-Go thin film, 12...
...Protective film, 13...Lead frame, 1
4...Thermosetting resin.
Claims (1)
成された磁電変換部と、この磁電変換部上に形成された
保護膜と、前記スルホール等を介して絶縁基板裏面にて
導通をもたせたリード部とを備えたことを特徴とする磁
電変換素子。An insulating substrate having through holes etc., a magnetoelectric converter formed on this insulating substrate, a protective film formed on this magnetoelectric converter, and a lead provided with conduction on the back side of the insulating substrate via the through holes etc. A magnetoelectric conversion element characterized by comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62049210A JPS63215086A (en) | 1987-03-04 | 1987-03-04 | Magnetoelectric transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62049210A JPS63215086A (en) | 1987-03-04 | 1987-03-04 | Magnetoelectric transducer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63215086A true JPS63215086A (en) | 1988-09-07 |
Family
ID=12824615
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62049210A Pending JPS63215086A (en) | 1987-03-04 | 1987-03-04 | Magnetoelectric transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63215086A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0722668A (en) * | 1993-06-23 | 1995-01-24 | Nec Corp | Magnetoresistive effect element |
| JP2014119260A (en) * | 2012-12-13 | 2014-06-30 | Keihin Corp | Fuel injection valve with in-cylinder pressure sensor |
-
1987
- 1987-03-04 JP JP62049210A patent/JPS63215086A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0722668A (en) * | 1993-06-23 | 1995-01-24 | Nec Corp | Magnetoresistive effect element |
| JP2014119260A (en) * | 2012-12-13 | 2014-06-30 | Keihin Corp | Fuel injection valve with in-cylinder pressure sensor |
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