JPS63211732A - Manufacture of lead with bump - Google Patents
Manufacture of lead with bumpInfo
- Publication number
- JPS63211732A JPS63211732A JP4497887A JP4497887A JPS63211732A JP S63211732 A JPS63211732 A JP S63211732A JP 4497887 A JP4497887 A JP 4497887A JP 4497887 A JP4497887 A JP 4497887A JP S63211732 A JPS63211732 A JP S63211732A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- metal
- bump
- alloy
- bumps
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 13
- 239000000956 alloy Substances 0.000 claims abstract description 13
- 150000002739 metals Chemical class 0.000 claims abstract description 11
- 238000005530 etching Methods 0.000 claims abstract description 9
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- 239000011888 foil Substances 0.000 claims abstract description 7
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 5
- 229910052709 silver Inorganic materials 0.000 claims abstract description 5
- 229910052745 lead Inorganic materials 0.000 claims abstract description 4
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 4
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 3
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 3
- 229910052738 indium Inorganic materials 0.000 claims abstract description 3
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 claims abstract 4
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract 2
- 229910052735 hafnium Inorganic materials 0.000 claims abstract 2
- 229910052758 niobium Inorganic materials 0.000 claims abstract 2
- 229910052720 vanadium Inorganic materials 0.000 claims abstract 2
- 229910052726 zirconium Inorganic materials 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 15
- 239000012212 insulator Substances 0.000 claims description 4
- 229910017709 Ni Co Inorganic materials 0.000 claims description 2
- 229910003267 Ni-Co Inorganic materials 0.000 claims description 2
- 229910003262 Ni‐Co Inorganic materials 0.000 claims description 2
- 229910000640 Fe alloy Inorganic materials 0.000 claims 1
- 229910000990 Ni alloy Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 229910052742 iron Inorganic materials 0.000 abstract description 4
- 229910052759 nickel Inorganic materials 0.000 abstract description 4
- 229910052804 chromium Inorganic materials 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 2
- 229910052761 rare earth metal Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910017518 Cu Zn Inorganic materials 0.000 description 1
- 229910017752 Cu-Zn Inorganic materials 0.000 description 1
- 229910002482 Cu–Ni Inorganic materials 0.000 description 1
- 229910017770 Cu—Ag Inorganic materials 0.000 description 1
- 229910017827 Cu—Fe Inorganic materials 0.000 description 1
- 229910017818 Cu—Mg Inorganic materials 0.000 description 1
- 229910017945 Cu—Ti Inorganic materials 0.000 description 1
- 229910017943 Cu—Zn Inorganic materials 0.000 description 1
- 101100136092 Drosophila melanogaster peng gene Proteins 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体素子などの外部接続用電極（パッド）と
外部回路を接続するテープ状リードの製法に関し、特に
高密度で信頼性の高い接続を可能にするものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a method for manufacturing a tape-shaped lead that connects an external connection electrode (pad) of a semiconductor device or the like to an external circuit, and in particular, relates to a method for manufacturing a tape-shaped lead that connects an external connection electrode (pad) of a semiconductor element, etc. This is what makes it possible.
ＩＣ，ＬＳＩ等の半導体素子は、Ｓｉなどのチップ表面
にＡ２配線を形成したパッドを除いてパッシベーション
層により保護され、パッドと外部回路との接続には、Ａ
ｕや、１１細線を用いたワイヤーボンドが利用されてい
る。しかるにＬＳＩやＶＳＬＩなどの高集積素子では、
チップ当りのパッド数が１０〜１００以上となり、隣接
するワイヤー間で接触混戦等の障害が起り易い。このた
め最近ではテープ自動ボンディング（Ｔａｐｅ Ａｕｔ
ｏｍａｔｅｄＢｏｎｄｉｎｇ ： Ｔ Ａ Ｂ ）を
用い、テープ状リードを一括接続する方式が採用される
方向にある。Semiconductor elements such as ICs and LSIs are protected by a passivation layer, except for pads with A2 wiring formed on the surface of the Si chip.
Wire bonding using U or 11 fine wires is used. However, in highly integrated devices such as LSI and VSLI,
The number of pads per chip is 10 to 100 or more, and problems such as contact between adjacent wires are likely to occur. For this reason, tape automatic bonding (Tape Out) has recently been introduced.
There is a trend toward adoption of a method in which tape-shaped leads are connected all at once using omated bonding (TAB).
テープ状リードやＴＡＢテープについては、例えばソリ
ッドステイトテクノロジイ（Ｓｏｌｉｄ ＳｔａｔｅＴ
ｅｃｈｎｏｌｏｇｙ） １９７８年３月号ｐ、５３〜５
８に詳しく説明されている。すなわちテープ状リードは
厚さ７０μ、３５ａまたはこれ以下のタフピッチ銅（Ｃ
１１０）、無酸素ｍ （Ｃ１０１） 、Ｃｕ −２，４
％Ｆ ｅ −０，１２％Ｚ ｎ−０，０３％Ｐ合金（Ｃ
ｕ １９４） 、電解銅等の箔状体からエツチングなど
により形成される。チップ外周近くに配列するパッドは
通常５０〜１００μ角で、ＩＯθ〜３００μピッチに形
成されており、リード先端もこれに正確に重なるパター
ンに形成され、２層または３層のテープ状リードはリー
ド先端部を除き、それぞれ片面または両面がポリイミド
膜で処理される。Regarding tape leads and TAB tape, for example, Solid State Technology
technology) March 1978 issue p. 53-5
8 is explained in detail. In other words, the tape-shaped lead is made of tough pitch copper (C) with a thickness of 70μ, 35A or less.
110), anoxic m (C101), Cu-2,4
%Fe -0,12%Z n-0,03%P alloy (C
u 194) is formed by etching or the like from a foil-like material such as electrolytic copper. The pads arranged near the outer periphery of the chip are usually 50 to 100μ square and formed at an IOθ to 300μ pitch, and the lead tips are also formed in a pattern that exactly overlaps with this. Each one or both sides are treated with a polyimide film, except for the parts.
素子のパッド上に形成されたＡｕバンプ（凸起）とＡｕ
メッキされたリード先端は熱ブロツク上で圧着して接続
しているが、より新しい方法としてリード側にバンプを
形成している。この方法によればチップにバンプを形成
することによるコストや品質上の難問が回避できる。こ
の製法はＡｕメッキ法などにより予めバンプパターンの
基板に形成して熱圧着などで転写する方法が一触的であ
るが複雑な工程を要しかつ高価なＡｕの使用は避けられ
なかった。Ｃｕリードの一部を凸状に残して他の部分を
エツチング処理しバンプを形成することも一部で行なわ
れているが、リード部のＣｕは一般的に硬質で、素子の
Ａｊ２パッドを熱圧着するには高温、高圧力を必要とし
、このため素子への熱的、機械的ストレスとなり性能の
低下をまねき易い。Au bumps (protrusions) formed on the pad of the element and Au
The plated lead tips are connected by crimping on a thermal block, but a newer method involves forming bumps on the lead side. This method avoids the cost and quality problems associated with forming bumps on the chip. This manufacturing method involves forming a bump pattern on a substrate in advance by Au plating or the like and transferring it by thermocompression bonding or the like, but it requires a complicated process and the use of expensive Au is unavoidable. In some cases, bumps are formed by leaving a part of the Cu lead in a convex shape and etching the other part, but the Cu in the lead part is generally hard, and the Aj2 pad of the element is heated. Pressure bonding requires high temperature and high pressure, which causes thermal and mechanical stress on the element, which can easily lead to a decrease in performance.
上記の問題は、ＬＳＩ、ＶＬＳ Ｉなどのように高集積
化、微細化され、かつパッド部が多層化されるにつれ、
より重大となる。すなわち可及的にボンディングし易く
、しかも実用期間中に劣化せず、経済的なバンプ構造が
強く求められている。The above-mentioned problems arise as LSIs, VLSIs, etc. become more highly integrated and miniaturized, and pads become multilayered.
becomes more serious. In other words, there is a strong demand for an economical bump structure that is as easy to bond as possible, does not deteriorate during its practical use.
さらにハンドリング的にリード変形を起すことな（微細
形状を保つことのできる充分な強度と熱伝導性を要する
ため前記のバンプ要求特性と相反するところがあり、こ
れらを総合して満すことが必要である。またリードの製
造においても可及的に単純工程で能率的に製造できるこ
とが求められている０本発明はこれらの諸問題を総て解
決した新規なバンプ付きリードの製法を開発したもので
ある。In addition, sufficient strength and thermal conductivity are required to prevent lead deformation during handling (maintaining the fine shape), which conflicts with the bump characteristics required above, and these must be met in total. In addition, in manufacturing leads, it is required to be able to manufacture them efficiently using as simple a process as possible.The present invention is the development of a new method for manufacturing leads with bumps that solves all of these problems. be.
本発明は上記の問題に鑑みなされたものでバンプ用とリ
ード用とが少なくとも２種以上の金属を層状に固着した
金属テープまたは金属テープと絶縁体とからなり、リー
ド部の一部にバンプ用金属を突起状に設けたことを特徴
とするバンプ付きリードの製法であ、る。The present invention was made in view of the above problem, and the bump and lead parts are made of a metal tape made of at least two or more metals fixed in a layered manner, or a metal tape and an insulator, and a part of the lead part is used for the bump part. This is a method for manufacturing a lead with bumps, which is characterized by metal being provided in the shape of a protrusion.
以下に本発明の態様について図面により具体的に説明す
る。Embodiments of the present invention will be specifically explained below with reference to the drawings.
第１図（ａ）に示すように金属箔状体はリード用金属（
１）とバンプ用金属（２）を固着して複合したもので所
定の中にスリットされ第２図に示すようにパイロットホ
ール（３）がパンチされている。この両面にホトレジス
ト処理してリードパターンにエツチングされている６次
にレジスト剥離してから、再びバンプ部のみをレジスト
処理して第１図（ハ）に示すバンプ（４）を形成する。As shown in Fig. 1(a), the metal foil-like body is made of lead metal (
1) and a bump metal (2) are fixedly bonded to each other, slits are made in a predetermined area, and pilot holes (3) are punched as shown in FIG. Both surfaces are subjected to photoresist treatment, and the resist that has been etched into the lead pattern is then peeled off, and then only the bump portion is subjected to resist treatment again to form the bumps (4) shown in FIG. 1(C).
同図は第２図のリード（５）の先端を拡大したものであ
る。上記においてリードの形成をプレスで行ないバンプ
のみをレジストエツチング法とすることもできる。また
最初にバンプを形成してからエツチングすることもでき
る。This figure is an enlarged view of the tip of the lead (5) in FIG. 2. In the above method, the leads may be formed by pressing and only the bumps may be formed by resist etching. Alternatively, the bumps can be formed first and then etched.
さらに本発明においては上記のリード用金属とバンプ用
金属との間に第３図（ａ）に示すように中間に中間層（
ハ）となる金属層を設けることができる。この場合はエ
ツチング処理後に同図ら）のようにリード部として残存
する。この中間層はＮｉ、Ｃｏ、Ｆｅ、Ｃｒ、Ｔｉなど
の拡散バリヤー作用やＡｇ。Furthermore, in the present invention, as shown in FIG. 3(a), an intermediate layer (
C) A metal layer can be provided. In this case, after the etching process, the lead portion remains as shown in FIG. This intermediate layer contains diffusion barrier materials such as Ni, Co, Fe, Cr, and Ti, and Ag.
Ｓｎ、５ｎ−Ｐｂなどの接着性の作用をなすものである
。この他、中間または表裏に金属層を設けて多層にする
ことも可能である。It acts as an adhesive such as Sn or 5n-Pb. In addition, it is also possible to provide a multilayer structure by providing a metal layer in the middle or on the front and back sides.
次に本発明の別の態様について説明する。Next, another aspect of the present invention will be explained.
第４図に示すようにリード用金属の下面にポリイミド、
ポリエステル、エポキシレジンなどからなる絶縁体（７
）により補強されている。これは前記第２図のパイロッ
トホール（３）、第５図（ａ）のダイホール（８）など
をパンチした絶縁フィルム（９）に同図０）のように金
属箔（］）をラミネートしてから前記と同様にエツチン
グ法などにより、リードおよびバンプを形成するもので
ある。As shown in Figure 4, polyimide is applied to the lower surface of the lead metal.
Insulators made of polyester, epoxy resin, etc. (7
) is reinforced by This is done by laminating a metal foil (]) on an insulating film (9) punched with pilot holes (3) in Figure 2 and die holes (8) in Figure 5 (a) as shown in Figure 0). Then, leads and bumps are formed by etching or the like in the same manner as described above.
さらに別の態様としては第６図（ａ）に示すようにリー
ド金属（１）の両面にバンプ金属（２）、（２′）を配
した箔状体を用い、これを前記した如くエツチング処理
してバンプ（４）、（４′）を形成するものである。In yet another embodiment, as shown in FIG. 6(a), a foil-like body in which bump metals (2) and (2') are arranged on both sides of a lead metal (1) is used, and this is etched as described above. Then, bumps (4) and (4') are formed.
（ｂ）は同一リードに２個のバンプが形成されており、
（Ｃ）は別個のリードの表裏にバンプを形成したもので
、これらは２個の素子を接合できる。In (b), two bumps are formed on the same lead,
(C) shows bumps formed on the front and back sides of separate leads, which can bond two elements together.
本発明においてリード金属としては、ＣｕおよびＣｕ合
金としては例えばＣｕ−Ｆｅ系、Ｃｕ−５ｎ系、Ｃｕ−
Ａｊ２系、Ｃｕ−Ａｇ系、Ｃｕ−Ｎｉ−３ｎ系、Ｃｕ−
Ｚｎ−Ｃｒ系、Ｃｕ−Ｍｇ系、Ｃｕ−Ｔｉ系、Ｃｕ−Ｂ
ｅ系、Ｃｕ−Ｚｎ系、Ｃｕ−Ｎｉ系などの他、Ｆｅ系、
Ｎｉ系、例えば純Ｆｅ、純Ｎｉ、Ｆｅ−４２Ｎｉ合金、
Ｆｅ−Ｎｉ−Ｃｏ系、／ｌおよびＡ２合金などが使用で
きる。In the present invention, lead metals such as Cu and Cu alloys include Cu-Fe series, Cu-5n series, Cu-
Aj2 series, Cu-Ag series, Cu-Ni-3n series, Cu-
Zn-Cr series, Cu-Mg series, Cu-Ti series, Cu-B
In addition to e-based, Cu-Zn-based, Cu-Ni-based, etc., Fe-based,
Ni-based, such as pure Fe, pure Ni, Fe-42Ni alloy,
Fe-Ni-Co based, /l and A2 alloys, etc. can be used.
またバンプ金属としては、／ｌ、Ａｇ、Ｐｂ。Examples of bump metals include /l, Ag, and Pb.
Ｉｎ、Ｐｄなどおよびこれらの合金または純Ｃｕ特に純
度９９．９９５％以上の高純度Ｃｕ、さらにこれに少量
のＭｇ、レア・アース、Ｂｅ、Ｃａ、ＴＩ。In, Pd, etc. and their alloys or pure Cu, especially high purity Cu with a purity of 99.995% or more, and in addition small amounts of Mg, rare earths, Be, Ca, TI.
Ｚｒ、ＶＳＮｂ、Ｔａ、、ＨＥＳＣｒなどを含む合金が
好適である。そして中間金属としてはＮｉ、Ｃｏ、Ｆｅ
、Ｃｒなどのバリアー性金属やＳｎ。Alloys containing Zr, VSNb, Ta, HESCr, etc. are suitable. And intermediate metals include Ni, Co, and Fe.
, barrier metals such as Cr, and Sn.
５ｎ−Ｐｂ、Ａｇなどの接着性金属および合金などであ
る。前記のリード金属は厚さ１０〜１ｏＯ−１特に１０
〜５０−がよく、巾０．０５〜０．２ｍでピッチ０．１
〜０．５鵬である。またバンプ用金属としては厚さ１０
〜５０−で巾は３０〜１００ｎのものが一般的である。These include adhesive metals and alloys such as 5n-Pb and Ag. The lead metal has a thickness of 10 to 1oO-1, especially 10
~50- is good, width 0.05-0.2m, pitch 0.1
~0.5 Peng. Also, as a metal for bumps, the thickness is 10
-50- and the width is generally 30-100n.
本発明においてはリードの強度や導電性とバンプの接合
性を両立させ、かつ容易で能率的に製造できるものであ
る。すなわちバンプとしては素子のパッド金属（通常は
Ａ２またはＡｎ−Ｓｔ。The present invention achieves both the strength and conductivity of the leads and the bondability of the bumps, and can be manufactured easily and efficiently. That is, the bumps are pad metal of the element (usually A2 or An-St).
Ａｌ−Ｃｕなどの、１１合金）と熱圧着法などにより接
合し易い比較的低融点金属を使用するので有利である。It is advantageous to use a relatively low melting point metal that can be easily bonded to Al--Cu (alloy No. 11) by thermocompression bonding or the like.
特に同一の金属であるＡｌはＡｕバンプとＡｆパッドで
起る拡散劣化減少であるｐｕｒｐｌｅｐｌａｎｇｕｅを
起さないので、高温の長期の実用に亘り信転性に勝り、
電食の点においても理想的であまた高純度Ｃｕも通常の
Ｃｕに比べ軟質でボンディングし易く、かつＡｕよりも
安価でかつｐｕｒｐｌｅ ｐｌａｎｇｕｅも起し難い。In particular, since Al, which is the same metal, does not cause purple plunge, which is a reduction in diffusion deterioration that occurs in Au bumps and Af pads, it has superior reliability over long-term practical use at high temperatures.
It is also ideal in terms of electrolytic corrosion, and high-purity Cu is softer and easier to bond with than ordinary Cu, is cheaper than Au, and is less likely to cause purple plunge.
リードとしてはＣｕ、Ｃｕ合金が特に好適であり、熱お
よび電気伝導度に優れかつ広範囲の機械的強度のものが
選択できる。さらにＣｕリードは半田付は性、メッキ性
に優れているので外部回路と接続されるリードの必要条
件を有利に満すことができる。しかして本発明において
はエツチング法によりバンプを形成するので生産性に優
れている他、第７図に示すようにサイドエッチにより頂
部がせまい台形状または角錐状のバンプとなるためボン
ディング時にツールの荷重が接合部に有効に集中してボ
ンディングを容易に確実に行なうことができる。Cu and Cu alloys are particularly suitable for the lead, and those with excellent thermal and electrical conductivity and a wide range of mechanical strength can be selected. Further, since Cu leads have excellent solderability and plating properties, they can advantageously meet the requirements for leads connected to external circuits. However, in the present invention, since the bumps are formed by an etching method, productivity is excellent, and as shown in FIG. is effectively concentrated at the joint, making it possible to perform bonding easily and reliably.
以下に本発明の一実施例について説明する。 An embodiment of the present invention will be described below.
３５−のＣｕ−０，１％Ｚｒ合金と３０ｔｔｖａＡ ｌ
−１％Ｓｉ１または９９．９９９％Ｃｕ ＋０．００
０４％Ｔｉからなる合金の合わせ箔をＦｅＣｊ！ｓを用
いてエツチングによりリードを形成し、５０〜５０−の
バンプを有する第２図と第７図に示すリードパターンを
作成した０本品を１ｎのＡＮを蒸着したＳｔウェハーと
４００℃で７０ｇ／リードの荷重で１秒間加熱して熱圧
着した。これの剥離試験を行なった結果、剥離強度は前
者が３２ｇｒ、後者が３５ｇｒであり、これを１５０℃
で５００時間エージング後も３０ｇｒと２９ｇｒで劣化
は非常に少ない。35-Cu-0,1% Zr alloy and 30ttvaAl
-1%Si1 or 99.999%Cu +0.00
FeCj! alloy laminated foil consisting of 04% Ti! Leads were formed by etching using S, and the lead patterns shown in Figures 2 and 7 with 50 to 50 bumps were created.This product was heated to 70g at 400℃ with a St wafer on which 1n of AN was evaporated. /Heated for 1 second under the load of the lead and bonded by thermocompression. As a result of a peel test, the former had a peel strength of 32 gr and the latter had a peel strength of 35 gr.
Even after aging for 500 hours, there was very little deterioration at 30gr and 29gr.
比較のためＣｕ−０，ＩＺｒ合金の１体の６５−の箔か
ら形成したリードについて同様な試験を行なったところ
剥離強度１０ｇｒ以下で不安定であった。For comparison, a similar test was conducted on a lead formed from a single 65- foil of Cu-0, IZr alloy, and the lead was unstable with a peel strength of 10 gr or less.
これは本発明品と同じ３０ｇｒ程度の剥離強度を安定し
て得るためには５００°Ｃにおいて２倍の熱圧着荷重を
要した。In order to stably obtain the peel strength of about 30 gr, which is the same as the product of the present invention, twice the thermocompression load was required at 500°C.
以上説明したように本発明によれば任意の組合せでバン
プ部とリードを能率的に凸状バンプを製造することがで
きるものであり、半導体の小型化、高集積化に対応し得
る微細で良好な導電性と信幀性の高い接続が可能である
など工業上顕著な効果を奏するものである。なお本発明
は半導体の他、同様の電子部品、機器にも応用できるも
のであり、ＴＡＢテープに留まらずＪ本発明リード部を
含むプリント回路板にも同様に適用し得るものである。As explained above, according to the present invention, it is possible to efficiently manufacture convex bumps using any combination of bump parts and leads, and it is possible to efficiently manufacture convex bumps using any combination of bump parts and leads. It has remarkable industrial effects, such as enabling connections with high conductivity and reliability. The present invention can be applied not only to semiconductors but also to similar electronic parts and devices, and is not limited to TAB tapes, but can be similarly applied to printed circuit boards including lead portions of the present invention.
第１図乃至第７図は本発明の一実施例を示す図であり、
第１図、第３図、第４図および第６図は本発明によるリ
ードの側面図、第２図および第５図は本発明によるリー
ドの平面図、第７図は本発明によるリードのバンプ部の
拡大図で（ａ）は側面図、（ロ）は平面図である。
１・・・リード金属、 ２・・・バンプ金属、 ３・・
・パイロットホール、 ４・・・バンプ、 ５・・・
リード、６・・・中間層、 ７・・・絶縁体、 ８・・
・グイホール、９・・・絶縁フィルム。
特許出願人 古河電気工業株式会社
第２図1 to 7 are diagrams showing an embodiment of the present invention,
1, 3, 4 and 6 are side views of the lead according to the invention, FIGS. 2 and 5 are plan views of the lead according to the invention, and FIG. 7 is a bump of the lead according to the invention. In the enlarged view of the part, (a) is a side view and (b) is a plan view. 1... Lead metal, 2... Bump metal, 3...
・Pilot hole, 4...bump, 5...
Lead, 6... Intermediate layer, 7... Insulator, 8...
・Guihole, 9...Insulating film. Patent applicant Furukawa Electric Co., Ltd. Figure 2
Claims (3)
属を層状に固着した金属箔体または金属箔体と絶縁体と
の箔状体を用いてエッチング法によりリード部の一部に
バンプ用金属を突起状に設けたことを特徴とするバンプ
付きリードの製法。(1) For bumps and for leads, use a metal foil body made of at least two types of metals fixed in layers or a foil body of a metal foil and an insulator, and use an etching method to form bumps on a part of the lead part. A method for manufacturing bumped leads characterized by metal protrusions.
およびこれらの合金または高純度Ｃｕおよびこれに少量
のＭｇ、レア・アース、Ｂｅ、Ｃａ、Ｔｉ、Ｚｒ、Ｖ、
Ｎｂ、Ｈｆ、を含む金属または合金であることを特徴と
する特許請求の範囲第１項記載のバンプ付きリードの製
法。(2) Bump metal is Al, Ag, Pb, In, Pd
and alloys of these or high-purity Cu and small amounts of Mg, rare earths, Be, Ca, Ti, Zr, V,
2. The method for manufacturing a bumped lead according to claim 1, wherein the bumped lead is made of a metal or alloy containing Nb and Hf.
Ａｌ合金、Ｆｅ系合金、Ｎｉ系合金、Ｆｅ−Ｎｉ−Ｃｏ
系などの金属または合金であることを特徴とする特許請
求の範囲第１項記載のバンプ付きリードの製法。(3) Lead metal is Cu and Cu alloy, Al and Al alloy, Fe alloy, Ni alloy, Fe-Ni-Co
2. The method for producing a bumped lead according to claim 1, wherein the bumped lead is made of a metal or alloy such as a metal or an alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4497887A JPS63211732A (en) | 1987-02-27 | 1987-02-27 | Manufacture of lead with bump |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4497887A JPS63211732A (en) | 1987-02-27 | 1987-02-27 | Manufacture of lead with bump |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63211732A true JPS63211732A (en) | 1988-09-02 |
Family
ID=12706556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4497887A Pending JPS63211732A (en) | 1987-02-27 | 1987-02-27 | Manufacture of lead with bump |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63211732A (en) |
-
1987
- 1987-02-27 JP JP4497887A patent/JPS63211732A/en active Pending
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