JPS63211664A - Semiconductor integrated circuit device - Google Patents

Abstract

PURPOSE:To make it possible to carry out proper temperature management of individual semiconductor integrated circuit devices and to improve reliability thereof, by providing a temperature detection circuit which detects that a temperature of the semiconductor substrate has exceeded a predetermined level and outputs a detection output signal a logic level through a predetermined external terminal. CONSTITUTION:A bipolar gate array integrated circuit is provided with a temperature detection circuit TD including a temperature detection element whose base-emitter voltage has negative temperature properties and formed during the same manufacture process with a bipolar transistor constituting a logic gate circuit. The temperature detection circuit TD determines a change is base-emitter voltage of the temperature detection element by means of a current switching circuit provided in the form of a differential amplifier in a voltage comparison section VC and detects that a temperature of a semiconductor substrate has exceeded a predetermined dangerous temperature. The detection signal is outputted as a logic level signal by an output section OB and supplied to an external temperature control circuit through an external terminal. In this manner, increase of temperature can be detected for individual semiconductor substrates and thus proper temperature management can be carried out.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor integrated circuit device, and relates to a technique effective for use in, for example, a bipolar gate array integrated circuit.

[Conventional technology]

There is a bipolar gate array integrated circuit that is equipped with a relatively large number of logic gate circuits that operate at high speed. In addition, in such bipolar gate array integrated circuits, CCB (Cnt
rolled Col11apseB onding)
There is a method.

Regarding this CCB method, for example, on November 28, 1983,
It is described on pages 1253 to 258 of the SI Device Handbook.

[Problem that the invention seeks to solve]

Since the bipolar gate array integrated circuit as described above attempts to speed up its operation by passing a relatively large operating current, the power consumption and heat generation amount of the semiconductor substrate are large. Therefore, in such a bipolar gate array integrated circuit, it is necessary to perform temperature management using, for example, an air cooling or water cooling method. In particular, when the above-mentioned CCB method is adopted in the semiconductor integrated circuit device, the temperature resistance between the package board and the semiconductor substrate is reduced by connecting the pancage board and the semiconductor substrate with solder balls. There is a large variation depending on the

Therefore, it is difficult to predict these temperature resistances at the design stage of a semiconductor integrated circuit device, limit the temperature rise of the semiconductor substrate, and prevent failures due to abnormally high temperatures.

For this reason, it is desirable to detect temperature abnormalities in the semiconductor substrate for each semiconductor integrated circuit device and to perform temperature management to deal with this, but conventional semiconductor integrated circuit devices do not have individual temperature detection functions. Reliable temperature control cannot be achieved.

An object of the present invention is to provide a semiconductor integrated circuit device having new functions.

The above and other objects and novel features of this invention include:
It will become clear from the description of this specification and the accompanying drawings.

[Means for solving problems]

A brief overview of typical inventions disclosed in this application is as follows.

That is, a temperature detection circuit is provided on a semiconductor substrate on which a semiconductor integrated circuit device is formed, which detects when the temperature of the semiconductor substrate exceeds a predetermined temperature and outputs a logic level detection output signal via a predetermined external terminal. It shall be established.

[For production]

According to the above-mentioned means, by monitoring the detection output signal, without providing a special analog circuit,
Since temperature increases in individual semiconductor substrates can be detected, appropriate temperature management can be performed.

〔Example〕

FIG. 2 shows a layout diagram of an embodiment of a bipolar gate array integrated circuit to which the present invention is applied. The bipolar gate array integrated circuit of this embodiment is formed on one semiconductor substrate FisUB by a known bipolar integrated circuit manufacturing technique, although it is not particularly limited. In addition, this semiconductor substrate SUB is not particularly limited, but may be used for CC
It is mounted on a package board using method B.

In FIG. 1, although not particularly limited, a temperature detection circuit TD is formed in the center of a semiconductor substrate SUB, and a gate array G- ARY is formed. Bonding pads P1 to P7 are arranged at both ends of the semiconductor substrate SUB.

As will be described later, the temperature detection circuit TD includes a temperature detection section including a temperature detection element that utilizes the temperature characteristics of the base-emitter voltage v8E of a bipolar transistor, and a temperature detection section that detects changes in the base-emitter voltage of the temperature detection element using a reference voltage. It is comprised of a voltage comparison section that makes the determination and an output section that sends out the output signal of the voltage comparison section as a logic level output signal. The logic level output signal LTD of the temperature detection circuit TD is output from band P5 via a predetermined external terminal.
Sent to the outside.

FIG. 3 shows a block diagram of an embodiment of the temperature detection circuit TD of FIG. 2. In FIG.

In FIG. 3, the temperature detection circuit TD of this embodiment is composed of a temperature detection section TS, a voltage comparison section VC, and an output section OB.

As will be described later, the temperature detection section TS of the temperature detection circuit 1'D includes two bipolar transistors having a diode configuration by having their bases and collectors connected in common. Although not particularly limited, these transistors have their base-emitter voltages V having a negative temperature gradient, and function as temperature detection elements of the temperature detection circuit TD. Changes in the base-emitter voltage V= of these transistors correspond to the output signal -Vs of the temperature detection section TS.
The voltage is sent to the voltage comparator VC as a change in the voltage.

The voltage comparison section VC includes a reference voltage generation circuit that generates a reference voltage -Vo, and a current switch circuit in the form of a differential amplifier that compares this reference voltage with the output signal -Vs of the temperature detection section TS. Although not particularly limited, the output signal -vL of the voltage comparator VC is at a low level when the semiconductor substrate SOB is at a normal temperature, and is at a high level when the temperature of the semiconductor substrate SUB is, for example, 90 degrees Celsius or higher. .

The output section OB includes an emitter follower circuit made of a bipolar transistor, and the output signal of this output section OB is used as the output signal LTD of this temperature detection circuit TD. This output signal LTD is set to a logic high level when the semiconductor substrate SUB is at a normal temperature, and is set to a logic low level when the temperature of the semiconductor substrate SUB exceeds, for example, 90 degrees Celsius.

Although not particularly limited, the output signal LTD of the temperature detection circuit TD is sent to a temperature control circuit for controlling the temperature of a system including this semiconductor integrated circuit device, for example, for controlling air cooling or water cooling equipment of the system. used as an input signal.

FIG. 1 shows a circuit diagram of an embodiment of the temperature detection circuit TD of the bipolar gate array integrated circuit of this embodiment. In the figure, all bipolar transistors are NPN type bipolar transistors. Although not particularly limited, the bipolar gate array integrated circuit including this temperature detection circuit TD uses a negative power supply voltage -Vee, such as -5.2 .ANG., as its operating power supply voltage.

In FIG. 1, temperature detection parts TS of temperature detection circuits T and D
includes two bipolar transistors Tl and T2, whose bases and collectors are connected in common, so that they are in diode form and in series form.
The commonly connected bases and collectors of l are coupled to the circuit ground potential. The emitter of transistor T2 is coupled via resistor R4 to the collector of transistor T5 of voltage comparator VC.

A predetermined operating current is supplied to the transistors T1 and T2 of the temperature detection section TS via the transistor T5 of the voltage comparison section VC. As a result, the output signal -Vs of the temperature detection section TS has a relationship of -V3--2XVBE, where vBE is the base-emitter voltage of the transistors TI and T2. Here, although not particularly limited, the transistor T1. And the base-emitter voltage VIE of T2 has a relatively large negative temperature characteristic. That is, the base-emitter voltages of these transistors are reduced by increasing the temperature of the semiconductor substrate SUB on which the transistors are formed. Therefore, the output signal -Vs of the temperature detection unit TS increases as the temperature of the semiconductor substrate SUB increases.

The base of the transistor T5 of the voltage comparison section VC of the temperature detection circuit TD is coupled to the collector of the transistor T4. Transistor T4 is in diode form by having its base and collector connected in common, and its emitter is coupled to the circuit power supply voltage -Vee. That is, transistors T4 and T5 are in a current mirror configuration.

A series transistor T3 and a resistor R3 are provided between the commonly connected base and collector of the transistor T4 and the ground potential of the circuit.

A resistor R is connected between the collector and base of the transistor T3.
1 is provided, and a resistor R is provided between its base and the emitter γ.
2 is provided. Thereby, the transistor T3 acts as a constant voltage source whose emitter voltage is set by the resistance values of the resistors R1 and R2.

The collector current of the transistor T4 has a relatively stable current value determined by its base-emitter voltage, the stable emitter voltage formed by the transistor T3, and the resistance value of the resistor R3. The collector voltage of this transistor T4 is projected as a collector current of a transistor T5 having a current mirror configuration, and is supplied to the transistors T1 and T2 of the temperature detection section TS via a resistor R4. Therefore, the collector voltage -Vc of the transistor T5 becomes -Vc=-Vs-ICXR4, where the collector current is Ic and the resistance value of the resistor R4 is R4.

The collector voltage -Vc of the transistor T5 is supplied to the base of the transistor T6 that constitutes the amplifier circuit. The collector of transistor T6 is coupled to the circuit ground potential via resistor R5, and its emitter is coupled to the circuit power supply voltage -Vee via resistor R6. The collector voltage of the transistor T6 is supplied to the base of a transistor T7 that constitutes a current switch circuit in the form of a differential amplifier.

Incidentally, the collector of the transistor T4 described above is coupled to the base of the transistor T5 and also to the base of the transistor Tll. The collector of this transistor Tll is coupled to the circuit ground potential via a resistor RIO, and its emitter is connected to the circuit power supply voltage -Vee
is combined with

Transistor Tll is designed to have approximately the same electrical characteristics as transistor T5. That is, like the transistor T5, the transistor Tll has a current mirror configuration with the transistor T4, and a relatively stable collector current having the same value as the collector current of the transistor T5 is obtained at its collector. Therefore, the transistor T
The collector voltage -Vo of ll is the collector current Ic
When the resistance value of resistor RIO is RIO, -Vo=
The collector voltage -Vo of this transistor Tll becomes -1cXRl 0
is taken as a determination reference voltage of a current switch circuit, which will be described later.

The collector voltage -Vo of the transistor Tll is supplied to the base of the transistor TIO that constitutes the amplifier circuit.

The collector of transistor TIO is coupled to the circuit ground potential via resistor R8, and its emitter is coupled to the circuit power supply voltage -Vee via resistor R9. The collector voltage of the transistor TIO is supplied to the base of another transistor T8 constituting the current switch circuit in the form of a differential amplifier.

The emitters of transistors T7 and T8 are commonly connected;
It is further coupled to the collector of transistor T9. The collector of transistor T7 is coupled to the circuit ground potential via resistor R7. The collector of transistor T8 is
Connected directly to circuit ground potential. The emitter of the transistor T9 is coupled to the circuit power supply voltage -Vee, and the base thereof is supplied with a predetermined control voltage -Vcs from a voltage generating circuit (not shown) of the semiconductor integrated circuit device. Transistor T9 functions as a constant current source and supplies a predetermined operating current according to control voltage -Vcs to transistors T7 and T8. Thereby, transistors T7 and T8 constitute a current switch circuit in the form of a differential amplifier.

As mentioned above, the output signal -Vs of the temperature detection section TS is connected to the base of the transistor T7 via the amplification transistor T6.
A voltage according to the reference voltage -10 is supplied to the base of the transistor T8 via the amplifying transistor TlO. The reference voltage -Vo, that is, the resistance value of the resistor R8, is designed so that the base voltage of the transistor T8 is slightly higher than the base voltage of the transistor T7 when the semiconductor substrate SUB is at a normal temperature. Therefore, at this time, transistor T8 is turned on, and transistor T7 is turned off. As a result, the collector voltage of the transistor T7, that is, the voltage comparator VC
The output signal -1L is at a high level almost like the ground potential of the circuit.

On the other hand, when the temperature of the semiconductor substrate 1sUB increases, the base-emitter voltage vBE of the transistors T1 and T2 of the temperature detection section TS decreases in accordance with their temperature characteristics, and the output signal -Vs of the temperature detection section TS increases. Further, as the output signal -VS of the temperature detection section TS increases, the collector voltage -Vc of the transistor T5 increases, and the base voltage of the transistor T7 forming the current switch circuit increases.

The base voltage of this transistor T7 is the transistor T8
When the base voltage becomes higher than the base voltage of , the transistor 18 is rapidly turned off due to the amplification effect of the differential amplifier, and the transistor T7 is quickly turned on instead. As a result, the collector voltage of the transistor T7, that is, the output signal -vL of the voltage comparator VC becomes a predetermined low level determined by the transistor T9.

Although not particularly limited, in the bipolar gate array integrated circuit of this embodiment, the temperature of the semiconductor substrate SUB is 90 degrees Celsius.
The output signal -vL of the voltage comparator VC, in which the reference voltage -Vee value is set, is such that the collector voltage of the transistor T7, that is, the output signal -VL of the voltage comparator VC changes from high level to low level when the voltage exceeds the threshold voltage. , is supplied to the base of the transistor T12 of the output section OB of the temperature detection circuit TD. The collector of this transistor T12 is coupled to the ground potential of the circuit, and its emitter is coupled to the power supply voltage -Vee of the circuit via a resistor R11. In other words, the transistor T12 forms an emitter follower circuit together with the resistor R11. The emitter voltage of the transistor T12 is sent to the outside via an external terminal as an output signal LTD of the temperature detection circuit TD.

When the semiconductor substrate SUB is at a normal temperature, the output signal -vL of the voltage comparator VC is almost the ground of the circuit? ? It becomes a high level like R position. Therefore, the transistor T12 of the output section OB is turned on, and its output signal, that is, the output signal L TD of the temperature detection circuit TD becomes a logic high level like the ground potential of the circuit. On the other hand, semiconductor substrate S
When the temperature of UB rises and exceeds, for example, 90 degrees Celsius, the output signal -VL of the voltage comparator VC becomes low level. As a result, the transistor T12 of the output section OB is turned off, and its output signal LTD is set to the circuit power supply voltage -Vee
It becomes a logic low level like .

As mentioned above, the output signal LTD of this temperature detection circuit TD
is supplied to a temperature control circuit of a system including this bipolar gate array integrated circuit, and is used as an input signal for temperature management of the system. When the temperature of the semiconductor substrate SUB of this bipolar gate array integrated circuit exceeds, for example, 90 degrees Celsius and the output signal LTD is set to a logic low level, the temperature control circuit of the system strengthens device cooling by air cooling or water cooling, and backs up the system. preparations can begin.

As described above, the bipolar gate array integrated circuit of this embodiment includes a temperature detection element that is formed by the same manufacturing process as the bipolar transistors constituting the logic gate circuit and whose base-emitter voltage has negative temperature characteristics. A temperature detection circuit TD is provided. This temperature detection circuit TD determines changes in the base-emitter voltage of the temperature detection element using a current switch circuit in the form of a voltage comparison section and a VCO differential amplifier, and detects that the temperature of the semiconductor substrate exceeds a predetermined dangerous temperature. . This detection signal is converted into a logic level signal by the output section OB and is supplied to an external temperature control circuit via an external terminal.

For this reason, a digital system incorporating the bipolar gate array integrated circuit of this embodiment does not require a special analog circuit for determining changes in output signals due to temperature rise, and the semiconductor substrate of each semiconductor integrated circuit device can be temperature abnormalities can be detected individually, and system temperature management and system backup preparations can be started.

As shown in the above embodiment, when the present invention is applied to a semiconductor integrated circuit device such as a bipolar gate array integrated circuit, the following effects can be obtained. That is, (1) a temperature on a semiconductor substrate on which a semiconductor integrated circuit device is formed, at which it is detected that the temperature of the semiconductor substrate exceeds a predetermined temperature and a logic level detection output signal is output via a predetermined external terminal; By providing the detection circuit, the digital system including the semiconductor integrated circuit device can determine whether the temperature of the semiconductor substrate exceeds the dangerous temperature by monitoring the detection output signal.

(2) According to the above (paragraph 11), even if the semiconductor integrated circuit device included in the system is mounted by the CCB method and the temperature resistance between the package board and the semiconductor substrate is unstable, the individual semiconductor This provides the effect that consistent temperature management can be performed for each integrated circuit device.

(3) Since the temperature detection circuit TD in item (1) above is formed by the same manufacturing process as the logic gate circuit for realizing the main function of this semiconductor integrated circuit device, the temperature detection circuit TD is formed. There is no need to add a special manufacturing process to achieve this, and the advantage is that it can be achieved relatively easily.

(4) As mentioned above (in Section 11), by transmitting the temperature detection signal at a logic level, there is no need to provide analog circuits that are susceptible to noise (such as amplifier circuits) outside the semiconductor integrated circuit device, thereby preventing malfunctions. If possible, the above-described temperature control can be achieved without a relatively large increase in cost.

(5) Items (1) to (4) above prevent the occurrence of failures due to temperature abnormalities in digital systems that include semiconductor integrated circuit devices such as bipolar gate array integrated circuits that are equipped with high-speed logic gate circuits that consume relatively large amounts of power. This has the effect of being able to prevent this and improve its reliability.

Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that this invention is not limited to the above Examples and can be modified in various ways without departing from the gist thereof. Nor. For example, in this embodiment, the temperature detection circuit TD is placed in the center of the semiconductor substrate SUB, but it may be placed in any other position, or, for example, the temperature detection circuit TS may be separated from other blocks. It may also be placed. Furthermore, by providing a plurality of temperature detection circuits TD with different judgment temperatures, temperature management may be carried out in stages. In this embodiment, one semiconductor substrate SU[3 is mounted on one pancage board. However, the number of boards mounted on each package board may be plural. Furthermore, various embodiments can be adopted, such as the block configuration of the temperature detection circuit TD shown in FIG. 2 and the specific circuit configuration of the temperature detection circuit TD shown in FIG.

In the above explanation, the invention made by the present inventor was mainly applied to bipolar gate array integrated circuits, which is the background field of application, but the invention is not limited thereto. The present invention can also be applied to gate array integrated circuits using circuits and other bipolar logic integrated circuits. It can be widely used in digital devices including circuit devices.

〔Effect of the invention〕

The effects obtained by typical inventions disclosed in this application are explained to HR as follows. That is, a temperature detection circuit is provided on a semiconductor substrate on which a semiconductor integrated circuit device is formed, which detects when the temperature of the semiconductor substrate exceeds a predetermined temperature and outputs a detection output signal of a 1ζ logic level via a predetermined external terminal. By providing an external analog circuit such as an amplifier circuit, it is possible to properly manage the temperature of each semiconductor integrated circuit device, and prevent failures in digital systems that include such semiconductor integrated circuit devices. It is possible to prevent this and increase its reliability.

[Brief explanation of the drawing]

FIG. 1 is a circuit diagram showing an embodiment of a temperature detection circuit of a bipolar gate array integrated circuit to which the present invention is applied, and FIG. 2 is a circuit diagram of an embodiment of a bipolar gate array integrated circuit including the temperature detection circuit of FIG. Layout diagram showing an embodiment. FIG. 3 is a schematic diagram showing an embodiment of the temperature detection circuit of FIG. T D...Temperature detection circuit, 1゛s...Temperature detection section,
VC...voltage comparison section, OB...output section, T1 to T1
2...NPN type bipolar transistor, R1-R1
1...Resistance. SUB: Semiconductor substrate, G-ARY: Gate array, PI to P7: Bonding pad. Do. Figure 1 Figure 2 Figure 3 O

Claims (1)

[Claims] 1. A temperature detection circuit for detecting that the temperature of a semiconductor substrate exceeds a predetermined temperature, and an external terminal for outputting an output signal of the temperature detection circuit to the outside. Semiconductor integrated circuit device. 2. The temperature detection circuit includes a temperature detection element that is formed by the same manufacturing process as a circuit element for realizing the main function of the semiconductor integrated circuit device and converts a temperature change of the semiconductor substrate into a voltage change. a voltage comparison section that receives the output voltage of the temperature detection section and compares it with a predetermined reference voltage; and an output section that sends out the output signal of the voltage comparison section as a logic level output signal from the external terminal. A semiconductor integrated circuit device according to claim 1, characterized in that: 3. Claim 1, wherein the semiconductor integrated circuit device is a bipolar gate array integrated circuit.
The semiconductor integrated circuit device according to item 1 or 2.