JPS63200965A - Wafer polishing device - Google Patents

Wafer polishing device

Info

Publication number
JPS63200965A
JPS63200965A JP62031079A JP3107987A JPS63200965A JP S63200965 A JPS63200965 A JP S63200965A JP 62031079 A JP62031079 A JP 62031079A JP 3107987 A JP3107987 A JP 3107987A JP S63200965 A JPS63200965 A JP S63200965A
Authority
JP
Japan
Prior art keywords
wafer
surface plate
polishing
wafers
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62031079A
Other languages
Japanese (ja)
Inventor
Toshiro Nakanishi
俊郎 中西
Sadahiro Kishii
貞浩 岸井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62031079A priority Critical patent/JPS63200965A/en
Publication of JPS63200965A publication Critical patent/JPS63200965A/en
Pending legal-status Critical Current

Links

Landscapes

  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE:To improve a wafer in quality, by installing nozzles in both upper and lower surface plates, spouting fluid out of these nozzles, and making the wafer to as to separate from both these upper and lower surface plates by dint of the fluid pressure. CONSTITUTION:Fluid is spouted out of nozzles 5 installed in an upper surface plate 1 and a lower surface plate 2, and a wafer 7 is separated from these upper and lower surface plates 1 and 2 by dint of the fluid pressure. Simultaneously with this separation, alkanine abrasives sticking to a surface of the wafer 7 are washed away, getting rid of an etching action. In consequence, occurrence of any irregularity on the surface of the wafer 7 caused by etching is made preventable.

Description

【発明の詳細な説明】 〔概要〕 上部定盤及び下部定盤に噴出口を設け、この噴出口から
液を噴出し、その液圧によりウェーハを上部定盤及び下
部定盤から剥離するようにし、ウェーハが研磨剤により
エツチングされるのを防止するようにしたウェーハ研磨
装置。
[Detailed Description of the Invention] [Summary] Spout ports are provided in the upper surface plate and the lower surface plate, liquid is jetted from the jet ports, and the wafer is peeled from the upper surface plate and the lower surface plate by the liquid pressure. , a wafer polishing apparatus designed to prevent wafers from being etched by abrasives.

〔産業上の利用分野〕[Industrial application field]

本発明は、ウェーハ研磨装置に係り、特に定盤の構造の
改良に関するものである。
The present invention relates to a wafer polishing apparatus, and particularly to an improvement in the structure of a surface plate.

ウェーハ研磨装置に使用する研磨剤と混合して用いられ
る液はアルカリ性でエツチング作用を有している。
The liquid mixed with the polishing agent used in the wafer polishing apparatus is alkaline and has an etching effect.

研磨加工終了後の下部定盤の上には多数のウェーハがあ
り、それを取り出すのに時間が必要である。
There are many wafers on the lower surface plate after polishing, and it takes time to take them out.

このため取り出し!噴序の早いものと遅いものの表面状
態が異なり、特に最後の方で取り出されるウェーハは研
磨剤によりエツチングされるために表面に凹凸が住じる
Take it out for this reason! The surface conditions of wafers that are ejected early and those that are ejected late are different, and in particular, wafers taken out at the end have irregularities on their surfaces because they are etched by the abrasive.

以上のような状況からウェーハが研磨加工終了後に研磨
剤によりエツチングされるのを防止することが可能なウ
ェーハ研磨装置が要望されている。
Under the above circumstances, there is a need for a wafer polishing apparatus that can prevent the wafer from being etched by the abrasive after the polishing process is completed.

〔従来の技術〕[Conventional technology]

従来のウェーハ研磨装置は第4図に示すように示すよう
に、ポリウレタンの研磨布20を貼り付けた逆方向に回
転する二枚の定盤(22,23)の間にウェーハ7をキ
ャリア6の孔の中に入れて保持し、上部定盤22から研
磨剤を供給しながら加圧してウェーハ7の両面を同時に
研磨加工している。
As shown in FIG. 4, a conventional wafer polishing apparatus places a wafer 7 on a carrier 6 between two surface plates (22, 23) rotating in opposite directions and having a polyurethane polishing cloth 20 attached thereto. The wafer 7 is placed in the hole and held, and both sides of the wafer 7 are simultaneously polished by applying pressure while supplying an abrasive from the upper surface plate 22.

このキャリア6は、金属或いはエポキシ樹脂で造られた
Iγさが400μm以下の薄い円板で周囲が歯車になっ
ており、回転する太陽ギア24とインターナルギア25
により自転しな力(らインターナルギア25と太陽ギア
24の回転数の組み合わせによって公転をしている。
This carrier 6 is a thin disc made of metal or epoxy resin with an Iγ of 400 μm or less, surrounded by gears, and has a rotating sun gear 24 and an internal gear 25.
It rotates around its axis due to a combination of the rotational speeds of the internal gear 25 and the sun gear 24.

研磨加工が終了すると、上部定盤22を上に上げ下部定
盤23の上のウェーハ7を一枚づつ取り出して水洗する
。しかし枚数が多いため最後の方で取り出されるウェー
ハは研磨剤によってエツチングされるために第3図に示
す50倍に拡大した表面状態を示す図のように表面に凹
凸が生じている。
When the polishing process is completed, the upper surface plate 22 is raised and the wafers 7 on the lower surface plate 23 are taken out one by one and washed with water. However, since the number of wafers is large, the wafers taken out at the end are etched by the abrasive, resulting in uneven surfaces as shown in FIG. 3, which is enlarged 50 times.

〔発明が解決しようとする問題点3 以上説明の従来のウェーハ研磨装置で問題となるのは、
研磨加工終了後にウェーハを一枚づつ取り出してウェー
ハを水洗するのであるが、枚数が多いため最後の方で取
り出されるウェーハは研p剤と混合して用いられる液が
アルカリ性でエツチング作用を有しているために、表面
がエツチングされるので凹凸が生じていることである。
[Problem to be solved by the invention 3 The problems with the conventional wafer polishing apparatus described above are:
After the polishing process is completed, the wafers are taken out one by one and washed with water. However, since there are a large number of wafers, the wafers taken out at the end have an etching effect because the liquid mixed with the abrasive agent is alkaline. Because of this, the surface is etched, resulting in unevenness.

本発明は以上のような状況からウェーハが研磨加工後、
取り出されるまでの間に研磨剤によってエツチングされ
ないウェーハ研磨装置の提供を目的としたものである。
In view of the above-mentioned circumstances, the present invention is designed to prevent wafers from being polished after polishing.
The object of the present invention is to provide a wafer polishing apparatus that does not cause etching by an abrasive until the wafer is taken out.

〔問題点を解決するための手段〕[Means for solving problems]

上記問題点は、上部定盤及び下部定盤に噴出口を設け、
この噴出口から液を噴出し、その液圧によりウェーハを
上部定盤及び下部定盤から剥離するようにした本発明に
よるウェーハ研磨装置によって解決される。
The above problem can be solved by installing spouts on the upper and lower surface plates.
This problem is solved by a wafer polishing apparatus according to the present invention, in which liquid is ejected from the spout and the wafer is peeled off from the upper surface plate and the lower surface plate by the liquid pressure.

〔作用〕[Effect]

即ち本発明においては、上部定盤及び下部定盤に設けた
噴出口から液を噴出し、その液正によりウェーハを上部
定盤及び下部定盤から剥離すると共にウェーハ表面に付
着したアルカリ性の研磨剤を洗い流してエツチング作用
をなくすので、ウェーハの表面のエツチングによる凹凸
の発生を防止することが可能となる。
That is, in the present invention, liquid is ejected from the spout ports provided on the upper surface plate and the lower surface plate, and the liquid is used to peel the wafer from the upper surface plate and the lower surface plate, and remove the alkaline abrasive agent attached to the wafer surface. Since the etching effect is eliminated by washing away the etching, it is possible to prevent the occurrence of unevenness on the surface of the wafer due to etching.

〔実施例〕〔Example〕

以下第1図〜第2図について本発明の一実施例を説明す
る。
An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.

第1図に示すように本実施例では液としては水を用い、
上部定盤1及び下部定盤2に設けた導液路4を通して水
を流し、第2図に示すような位置に配置した噴出口5か
ら噴出させて研磨布3を通してウェーハ7と研磨布3の
接触面に水を供給すると、ウェーハ7は研磨布3から剥
離される。
As shown in Fig. 1, water is used as the liquid in this example.
Water flows through the liquid guiding path 4 provided on the upper surface plate 1 and the lower surface plate 2, and is ejected from the spout 5 located at the position shown in FIG. When water is supplied to the contact surface, the wafer 7 is peeled off from the polishing cloth 3.

更に供給を続けると、ウェーハ7の表面が水で洗浄され
、研磨剤と混合しているアルカリ性の液を洗い流す。
As the supply continues, the surface of the wafer 7 is washed with water, and the alkaline liquid mixed with the polishing agent is washed away.

このように水を噴出口5から研磨布3を通してウェーハ
7の表面に供給し、ウェーハ7の表面に付着している研
磨剤と混合しているアルカリ性の液を洗い流すことによ
り、研磨剤のアルカリ性を弱めエツチング作用をなくす
ので、ウェーハ7の表面の凹凸の発生を防止することが
可能となる。
In this way, water is supplied from the spout 5 through the polishing cloth 3 to the surface of the wafer 7, and by washing away the alkaline liquid mixed with the polishing agent adhering to the surface of the wafer 7, the alkalinity of the polishing agent is removed. Since the weak etching effect is eliminated, it is possible to prevent the occurrence of unevenness on the surface of the wafer 7.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば定盤に噴出口を設け
て、液を噴出させることにより、ウェーハの取り出し順
序に関係なく、研に剤によりエツチングされない表面に
凹凸のない品質の良好な研磨ウェーハを得ることができ
る利点があり、著しい品質向上の効果が期待でき工業的
には極めて有用なものである。
As explained above, according to the present invention, by providing a spout on the surface plate and spouting the liquid, high-quality polishing can be achieved without unevenness on the surface that is not etched by the abrasive agent, regardless of the order in which the wafers are taken out. It has the advantage of being able to obtain wafers, and can be expected to significantly improve quality, making it extremely useful industrially.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による一実施例を示す側断面間、第2図
は本発明による一実施例の噴出口の配置を示す図、 第3図は従来のウェーハ研磨装置で研磨したウェーハの
研磨面を示す図、 第4図は従来のウェーハ研磨装置の側断面図、ある。 図において、 1は上部定盤、 2は下部定盤、 3は研磨布、 4は導液路、 5は噴出口、 6はキャリア、 7はウェーハ、 を示す。 本発明による一実施例を示す側断面国 策   1   図 本発明による一実施例の噴出口の配置を示す国策  2
  図 従来のウェーハ研磨装置で研磨したウエーノ\の研磨面
を示す国策3図 従来のウェーハ研磨装置の側断面図 第4図
FIG. 1 is a side cross-sectional diagram showing an embodiment of the present invention, FIG. 2 is a diagram showing the arrangement of jet ports in an embodiment of the present invention, and FIG. 3 is a polishing of a wafer polished by a conventional wafer polishing apparatus. FIG. 4 is a side sectional view of a conventional wafer polishing apparatus. In the figure, 1 is an upper surface plate, 2 is a lower surface plate, 3 is a polishing cloth, 4 is a liquid guiding path, 5 is a spout, 6 is a carrier, and 7 is a wafer. Figure 1: National policy showing a side cross-section showing an embodiment of the present invention National policy showing the arrangement of spout ports in an embodiment of the present invention 2
Figure 3: National policy showing the polished surface of a wafer polished with a conventional wafer polishing machine Figure 4: Side sectional view of a conventional wafer polishing machine

Claims (1)

【特許請求の範囲】[Claims] 上部定盤(1)及び下部定盤(2)に噴出口(5)を設
け、前記噴出口(5)から液を噴出し、その液圧により
ウェーハ(7)を上部定盤(1)及び下部定盤(2)か
ら剥離するようにしたことを特徴とするウェーハ研磨装
置。
Spout ports (5) are provided on the upper surface plate (1) and the lower surface plate (2), and liquid is ejected from the jet ports (5), and the wafer (7) is transferred to the upper surface plate (1) and the upper surface plate (1) by the liquid pressure. A wafer polishing device characterized in that the wafer polishing device is capable of peeling off from a lower surface plate (2).
JP62031079A 1987-02-12 1987-02-12 Wafer polishing device Pending JPS63200965A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62031079A JPS63200965A (en) 1987-02-12 1987-02-12 Wafer polishing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62031079A JPS63200965A (en) 1987-02-12 1987-02-12 Wafer polishing device

Publications (1)

Publication Number Publication Date
JPS63200965A true JPS63200965A (en) 1988-08-19

Family

ID=12321420

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62031079A Pending JPS63200965A (en) 1987-02-12 1987-02-12 Wafer polishing device

Country Status (1)

Country Link
JP (1) JPS63200965A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0706857A1 (en) * 1994-10-11 1996-04-17 Ontrak Systems, Inc. Wafer polishing machine
EP0706855A3 (en) * 1994-10-11 1996-07-31 Ontrak Systems Inc Wafer polishing machine
US5692947A (en) * 1994-08-09 1997-12-02 Ontrak Systems, Inc. Linear polisher and method for semiconductor wafer planarization
US6336845B1 (en) 1997-11-12 2002-01-08 Lam Research Corporation Method and apparatus for polishing semiconductor wafers
US6425812B1 (en) 1997-04-08 2002-07-30 Lam Research Corporation Polishing head for chemical mechanical polishing using linear planarization technology
US6666756B1 (en) 2000-03-31 2003-12-23 Lam Research Corporation Wafer carrier head assembly
US7025660B2 (en) 2003-08-15 2006-04-11 Lam Research Corporation Assembly and method for generating a hydrodynamic air bearing

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6114855A (en) * 1984-06-28 1986-01-23 Toshiba Mach Co Ltd Polishing device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6114855A (en) * 1984-06-28 1986-01-23 Toshiba Mach Co Ltd Polishing device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5692947A (en) * 1994-08-09 1997-12-02 Ontrak Systems, Inc. Linear polisher and method for semiconductor wafer planarization
US6231427B1 (en) 1994-08-09 2001-05-15 Lam Research Corporation Linear polisher and method for semiconductor wafer planarization
EP0706857A1 (en) * 1994-10-11 1996-04-17 Ontrak Systems, Inc. Wafer polishing machine
EP0706855A3 (en) * 1994-10-11 1996-07-31 Ontrak Systems Inc Wafer polishing machine
US5558568A (en) * 1994-10-11 1996-09-24 Ontrak Systems, Inc. Wafer polishing machine with fluid bearings
US5593344A (en) * 1994-10-11 1997-01-14 Ontrak Systems, Inc. Wafer polishing machine with fluid bearings and drive systems
US6425812B1 (en) 1997-04-08 2002-07-30 Lam Research Corporation Polishing head for chemical mechanical polishing using linear planarization technology
US6336845B1 (en) 1997-11-12 2002-01-08 Lam Research Corporation Method and apparatus for polishing semiconductor wafers
US6416385B2 (en) 1997-11-12 2002-07-09 Lam Research Corporation Method and apparatus for polishing semiconductor wafers
US6666756B1 (en) 2000-03-31 2003-12-23 Lam Research Corporation Wafer carrier head assembly
US7025660B2 (en) 2003-08-15 2006-04-11 Lam Research Corporation Assembly and method for generating a hydrodynamic air bearing

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