JPS6320026B2 - - Google Patents
Info
- Publication number
- JPS6320026B2 JPS6320026B2 JP57228918A JP22891882A JPS6320026B2 JP S6320026 B2 JPS6320026 B2 JP S6320026B2 JP 57228918 A JP57228918 A JP 57228918A JP 22891882 A JP22891882 A JP 22891882A JP S6320026 B2 JPS6320026 B2 JP S6320026B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- type
- tin
- layer
- sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 26
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 229910003437 indium oxide Inorganic materials 0.000 claims description 9
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000007769 metal material Substances 0.000 claims description 5
- 229910006854 SnOx Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- YNMICVQQTIWUQI-UHFFFAOYSA-N [Sb].[Pt] Chemical compound [Sb].[Pt] YNMICVQQTIWUQI-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Description
本発明は、水素化アモルフアスシリコン（以下
「ａ−Si：Ｈ」という。）又は水素化アモルフアス
シリコンカーバイト（以下「ａ−SiC：Ｈ」とい
う。）を用いた太陽電池に関する。
従来、この太陽電池の代表例としては、第１図
に示すようにガラス等の透光性絶縁基板１上に、
真空蒸着法、スパツタ法又はCVD法等により酸
化インジウム等の透明導電膜２と、グロー放電分
解法によりｐ型ａ−Si：Ｈ層３、ｉ型ａ−Si：Ｈ
層４及びｎ型ａ−Si：Ｈ層５からなるアモルフア
スシリコン半導体層（以下「ａ−Si半導体層」と
いう。）６と、真空蒸着法等によりアルミニウム
等の金属電極７とを積層している。
そして、光８は、透光性絶縁基板１の側から入
射し、主としてｉ型ａ−Si：Ｈ層４内で吸収され
て透明導電膜２と金属電極７との間で起電力を発
生させる。
このような太陽電池の変換効率と、ａ−Si半導
体層６の作成条件については多くの研究がなされ
ているが、透明導電膜２とａ−Si：Ｈ層３との界
面については未だ解明されておらず、現状では変
換効率を向上させるにも限界を来たしており、ま
たそのバラツキが大きい欠点があつた。
本発明の目的は、上記した欠点を除去し、変換
効率を向上させ、かつそのバラツキの少ない太陽
電池を提供することである。
このような目的を達成させるために、本発明
は、透光性絶縁基板上に、酸化インジウムを主成
分とした膜と、ｐ型、ｉ型及びｎ型の各層がａ−
Si：Ｈであり又はｐ型及びｎ型のうち少なくとも
一方の層がａ−SiC：Ｈであつてｉ型の層がａ−
Si：Ｈであるａ−Si半導体層とを順次具備した太
陽電池において、前記酸化インジウムを主成分と
した膜と前記ａ−Si：Ｈ又は前記ａ−SiC：Ｈと
の間に、スズを主成分とした金属材料を用いて成
膜された、スズを主成分とし酸素を含有しない膜
又はSnOx（ただし、０＜ｘ＜１である。）で表わ
されるスズの低級酸化物を主成分とした膜を介在
していることを特徴とする太陽電池である。
ここで、「透光性絶縁基板」とは、ガラス、フ
イルムなどの透光性絶縁材料からなる基板であ
る。「酸化インジウムを主成分とした膜」として
は、酸化インジウム膜の他に、酸化インジウムに
酸化スズ、酸化タングステン、酸化モリブデンな
どを含有させた膜が挙げられる。「スズを主成分
とした金属材料」としては、スズの他に、アンチ
モン白金などを含有させた金属材料が挙げられ
る。「スズの低級酸化物」とは、SnOxについて
０＜ｘ＜１で表わされ、真空蒸着法、スパツタリ
ング法などにより成膜される。「スズ又はスズの
低級酸化物を主成分とした膜」は、膜の光吸収が
10％以下になる膜厚が好ましく、例えばスズ膜の
質量膜厚（単位面積当りの膜質量をその膜の比重
で割つたものをいう。）については20Å以下が好
ましい。
以下、本発明を実施例をもつて詳細に説明す
る。
第２図は、透光性絶縁基板を用いた太陽電池に
おける本発明の一実施例を示し、第１図と同一構
成部分は同一記号を付している（以下同様）。
１０はソーダライムガラスから成形されたガラ
ス基板であり、このガラス基板１０上にスズを不
純物として含んだ酸化インジウム（以下「ITO」
という。）膜２０（膜厚：700Å、シート抵抗：約
30Ω／□）を真空蒸着法により成膜し、このITO
膜２０上にスズ膜９（質量膜厚：約10Å）を真空
蒸着により成膜する。このスズ膜９は非常に薄い
ものであるから、必ずしも連続膜にならず、島状
構造のような不連続膜になつていると予想され
る。このスズ膜９による光の吸収は、波長550n
ｍの光に対して約４％であつた。次に、このスズ
膜９上にｐ型ａ−SiC：Ｈ層３０（膜厚：100
Å）、ｉ型ａ−Si：Ｈ層４０（膜厚：5000Å）及
びｎ型ａ−Si：Ｈ層５０からなるａ−Si半導体層
６０をグロー放電分解法により成膜し、このａ−
Si半導体層６０上に金属電極としてアルミニウム
電極７０を真空蒸着法により付着させて、太陽電
池を製作した。なお、本発明の効果を評価するた
めに、比較例として、第２図に示した実施例中、
ITO膜２０上にスズ膜９を成膜せずに、直接ａ−
Si半導体層６０を積層し、次いでアルミニウム電
極７０を付着した太陽電池を製作した。
このような実施例及び比較例による太陽電池の
電流電圧特性は、AM1（エアマス１）に調整され
た光を照射したときの電流電圧特性を測定した結
果、それぞれ第３図の曲線１１及び１２で示され
る。また下表に実施例及び比較例による太陽電池
の諸特性を示す。なお、同表の数値は比較例の
個々の特性を基準にして規格化している。
The present invention relates to a solar cell using hydrogenated amorphous silicon (hereinafter referred to as "a-Si:H") or hydrogenated amorphous silicon carbide (hereinafter referred to as "a-SiC:H"). Conventionally, as a typical example of this solar cell, as shown in FIG. 1, on a transparent insulating substrate 1 such as glass,
A transparent conductive film 2 of indium oxide or the like is formed by a vacuum evaporation method, a sputtering method, or a CVD method, and a p-type a-Si:H layer 3 and an i-type a-Si:H layer 3 are formed by a glow discharge decomposition method.
An amorphous silicon semiconductor layer (hereinafter referred to as "a-Si semiconductor layer") 6 consisting of a layer 4 and an n-type a-Si:H layer 5 and a metal electrode 7 made of aluminum or the like are laminated by a vacuum evaporation method or the like. There is. The light 8 enters from the transparent insulating substrate 1 side, is mainly absorbed within the i-type a-Si:H layer 4, and generates an electromotive force between the transparent conductive film 2 and the metal electrode 7. . Although much research has been conducted on the conversion efficiency of such solar cells and the conditions for forming the a-Si semiconductor layer 6, the interface between the transparent conductive film 2 and the a-Si:H layer 3 has not yet been elucidated. Currently, there is a limit to the improvement of conversion efficiency, and there is also a drawback of large variations in efficiency. An object of the present invention is to eliminate the above-mentioned drawbacks, improve conversion efficiency, and provide a solar cell with less variation. In order to achieve such an object, the present invention provides a film in which a film mainly composed of indium oxide and p-type, i-type, and n-type layers are formed on a transparent insulating substrate.
Si:H, or at least one of the p-type and n-type layers is a-SiC:H, and the i-type layer is a-
In a solar cell sequentially provided with a-Si semiconductor layers of Si:H, a film mainly composed of tin is interposed between the film mainly composed of indium oxide and the a-Si:H or the a-SiC:H. A film that is mainly composed of tin and does not contain oxygen, or a film that is mainly composed of a lower oxide of tin expressed as SnOx (0<x<1), which is formed using a metal material as a component. This solar cell is characterized by having a membrane interposed therein. Here, the "transparent insulating substrate" is a substrate made of a transparent insulating material such as glass or film. Examples of the "film containing indium oxide as a main component" include films in which indium oxide contains tin oxide, tungsten oxide, molybdenum oxide, etc., in addition to indium oxide films. Examples of the "metal material containing tin as a main component" include metal materials containing antimony platinum or the like in addition to tin. The "lower tin oxide" is represented by 0<x<1 for SnOx, and is formed into a film by a vacuum evaporation method, a sputtering method, or the like. "Films mainly composed of tin or lower oxides of tin" have low light absorption.
The film thickness is preferably 10% or less, and for example, the mass film thickness (meaning the film mass per unit area divided by the specific gravity of the film) of the tin film is preferably 20 Å or less. Hereinafter, the present invention will be explained in detail using examples. FIG. 2 shows an embodiment of the present invention in a solar cell using a transparent insulating substrate, and the same components as in FIG. 1 are given the same symbols (the same applies hereinafter). 10 is a glass substrate molded from soda lime glass, and on this glass substrate 10 is formed indium oxide (hereinafter referred to as "ITO") containing tin as an impurity.
That's what it means. ) Film 20 (thickness: 700Å, sheet resistance: approx.
30Ω/□) was formed by vacuum evaporation method, and this ITO
A tin film 9 (mass film thickness: about 10 Å) is formed on the film 20 by vacuum evaporation. Since this tin film 9 is very thin, it is not necessarily a continuous film, but is expected to be a discontinuous film such as an island structure. The absorption of light by this tin film 9 is at a wavelength of 550n.
It was about 4% of the light of m. Next, on this tin film 9, a p-type a-SiC:H layer 30 (thickness: 100
Å), an a-Si semiconductor layer 60 consisting of an i-type a-Si:H layer 40 (film thickness: 5000 Å) and an n-type a-Si:H layer 50 is formed by glow discharge decomposition method, and this a-
A solar cell was manufactured by depositing an aluminum electrode 70 as a metal electrode on the Si semiconductor layer 60 by vacuum evaporation. In addition, in order to evaluate the effect of the present invention, as a comparative example, among the examples shown in FIG.
Without forming the tin film 9 on the ITO film 20, directly a-
A solar cell was manufactured in which a Si semiconductor layer 60 was laminated and then an aluminum electrode 70 was attached. The current-voltage characteristics of the solar cells according to the examples and comparative examples are as shown by curves 11 and 12 in Figure 3, respectively, as a result of measuring the current-voltage characteristics when irradiated with light adjusted to AM1 (air mass 1). shown. Further, the table below shows various characteristics of solar cells according to Examples and Comparative Examples. Note that the numerical values in the same table are standardized based on the individual characteristics of the comparative examples.
【表】
この表によれば、実施例の太陽電池は、比較例
のものと対比して変換効率を10％も向上させてい
ることがわかる。また、この変換効率のバラツキ
については、実施例の太陽電池が比較例のものよ
りも少ないことが確認された。なお、実施例の太
陽電池は短絡電流が減少している。これはスズ膜
９の内部での光吸収及びその表面での光反射によ
り有効に利用される光量が減少したためと予想さ
れる。しかし、この短絡電流の減少分よりもフイ
ルフアクタの増加分の方が大きいために、結果と
しては前述したとおり変換効率を増加させてい
る。フイルフアクタが増加した理由は現時点では
定かでないが、スズ膜９をITO膜２０とｐ型ａ−
SiC：Ｈ層３０との間に介在させたことにより、
このスズ膜９が、グロー放電分解法によつてｐ型
ａ−SiC：Ｈ層３０を積層するときに発生する還
元性プラズマからITO膜２０を保護し、抵抗性接
触（オーミツクコンタクト）を改善したためであ
ると予想される。
本発明は以上の実施例に限定されず、ａ−Si半
導体層６０についてｎ型ａ−Si：Ｈ層５０をｎ型
ａ−SiC：Ｈ層に変更し、ｐ型ａ−SiC：Ｈ層３
０とｎ型ａ−Si：Ｈ層５０（又はｎ型ａ−SiC：
Ｈ層）を置換してもよい。
なお、ａ−SiC：Ｈ層はａ−Si：Ｈ層と対比し
てバンドギヤツプを大きくすることができ、短絡
電流及び開放端電圧を上昇させる効果があり、変
換効率が高くなる利点をもつている。
また、スズ膜９の成膜法としては、真空蒸着法
の他に、スパツタリング法でもよく、そのスズ膜
９としては金属スズのみならず、スズを主成分と
し、アンチモン、白金などを含有させた金属材料
の低級酸化物であつてもよい。このようなスズ膜
９又はスズの低級酸化物を介在しても、成膜後の
熱処理などの酸化工程を必要とせずに、前述した
ように太陽電池の特性を改善することができる。
以上のとおり、本発明によれば、従来以上に太
陽電池の変換効率を向上させ、かつそのバラツキ
を少なくさせたことから、その実用的価値は多大
である。[Table] According to this table, it can be seen that the solar cells of the examples have improved conversion efficiency by as much as 10% compared to those of the comparative examples. Furthermore, it was confirmed that the variation in conversion efficiency was smaller in the solar cells of the examples than in the comparative examples. In addition, the short circuit current of the solar cell of the example is reduced. This is expected to be due to a decrease in the amount of light that can be effectively utilized due to light absorption inside the tin film 9 and light reflection on its surface. However, since the increase in the foil factor is greater than the decrease in short circuit current, the conversion efficiency is increased as described above. Although the reason for the increase in film factor is not clear at present, the tin film 9 is replaced with the ITO film 20 and the p-type a-
By interposing it between the SiC:H layer 30,
This tin film 9 protects the ITO film 20 from reducing plasma generated when p-type a-SiC:H layer 30 is laminated by glow discharge decomposition method, and improves resistive contact (ohmic contact). This is expected to be because of this. The present invention is not limited to the above embodiments, but the n-type a-Si:H layer 50 of the a-Si semiconductor layer 60 is changed to an n-type a-SiC:H layer, and the p-type a-SiC:H layer 3
0 and n-type a-Si:H layer 50 (or n-type a-SiC:
H layer) may be replaced. Note that the a-SiC:H layer can have a larger band gap than the a-Si:H layer, has the effect of increasing short-circuit current and open circuit voltage, and has the advantage of increasing conversion efficiency. . In addition, the tin film 9 may be formed by a sputtering method in addition to the vacuum evaporation method, and the tin film 9 may be made not only of metal tin but also of tin as a main component and containing antimony, platinum, etc. It may also be a lower oxide of a metal material. Even if such a tin film 9 or a lower oxide of tin is interposed, the characteristics of the solar cell can be improved as described above without requiring an oxidation process such as heat treatment after film formation. As described above, according to the present invention, the conversion efficiency of solar cells is improved more than ever, and the variation thereof is reduced, so that the present invention has great practical value.
第１図は従来の太陽電池を示す断面図、第２図
は本発明による実施例を示す断面図、第３図は前
実施例による太陽電池の電流電圧特性図である。
１０……ガラス基板、２０……ITO膜、３０…
…ｐ型ａ−SiC：Ｈ層、４０……ｉ型ａ−Si：Ｈ
層、５０……ｎ型ａ−Si：Ｈ層、６０……ａ−Si
半導体層、７０……アルミニウム電極、８……
光、９……スズ膜。
FIG. 1 is a sectional view showing a conventional solar cell, FIG. 2 is a sectional view showing an embodiment according to the present invention, and FIG. 3 is a current-voltage characteristic diagram of the solar cell according to the previous embodiment. 10...Glass substrate, 20...ITO film, 30...
...p-type a-SiC:H layer, 40...i-type a-Si:H
Layer, 50... n-type a-Si:H layer, 60... a-Si
Semiconductor layer, 70... Aluminum electrode, 8...
Light, 9...Tin film.
Claims (1)
分とした膜と、ｐ型、ｉ型及びｎ型の各層がａ−
Si：Ｈであり又はｐ型及びｎ型のうち少なくとも
一方の層がａ−SiC：Ｈであつてｉ型の層がａ−
Si：Ｈであるａ−Si半導体層とを順次具備した太
陽電池において、前記酸化インジウムを主成分と
した膜と前記ａ−Si：Ｈ又はａ−SiC：Ｈとの間
に、スズを主成分とした金属材料を用いて成膜さ
れた、スズを主成分とし酸素を含有しない膜又は
SnOx（ただし、０＜ｘ＜１である。）で表わされ
るスズの低級酸化物を主成分とした膜を介在して
いることを特徴とする太陽電池。1 A film mainly composed of indium oxide and p-type, i-type, and n-type layers are placed on a transparent insulating substrate.
Si:H, or at least one of the p-type and n-type layers is a-SiC:H, and the i-type layer is a-
In a solar cell that sequentially includes a-Si semiconductor layers that are Si:H, a layer that contains tin as a main component is disposed between the film that mainly contains indium oxide and the a-Si:H or a-SiC:H. A film formed using a metal material containing tin as a main component and containing no oxygen or
1. A solar cell comprising a film mainly composed of a lower oxide of tin represented by SnOx (0<x<1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57228918A JPS59119875A (en) | 1982-12-27 | 1982-12-27 | Solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57228918A JPS59119875A (en) | 1982-12-27 | 1982-12-27 | Solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59119875A JPS59119875A (en) | 1984-07-11 |
| JPS6320026B2 true JPS6320026B2 (en) | 1988-04-26 |
Family
ID=16883889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57228918A Granted JPS59119875A (en) | 1982-12-27 | 1982-12-27 | Solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59119875A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2538300B2 (en) * | 1988-02-10 | 1996-09-25 | 三洋電機株式会社 | Photoelectric conversion device |
| JPH0272564U (en) * | 1988-11-24 | 1990-06-01 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5548978A (en) * | 1978-10-04 | 1980-04-08 | Asahi Chem Ind Co Ltd | Photo-electromotive element |
| JPS55127083A (en) * | 1979-03-26 | 1980-10-01 | Matsushita Electric Ind Co Ltd | Semiconductor element |
-
1982
- 1982-12-27 JP JP57228918A patent/JPS59119875A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5548978A (en) * | 1978-10-04 | 1980-04-08 | Asahi Chem Ind Co Ltd | Photo-electromotive element |
| JPS55127083A (en) * | 1979-03-26 | 1980-10-01 | Matsushita Electric Ind Co Ltd | Semiconductor element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59119875A (en) | 1984-07-11 |
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