JPS6319813A - Vapor growth equipment - Google Patents
Vapor growth equipmentInfo
- Publication number
- JPS6319813A JPS6319813A JP16406386A JP16406386A JPS6319813A JP S6319813 A JPS6319813 A JP S6319813A JP 16406386 A JP16406386 A JP 16406386A JP 16406386 A JP16406386 A JP 16406386A JP S6319813 A JPS6319813 A JP S6319813A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- flow rate
- gas flow
- growth
- valve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims abstract description 120
- 239000013078 crystal Substances 0.000 claims abstract description 35
- 239000002994 raw material Substances 0.000 claims description 23
- 238000009826 distribution Methods 0.000 claims description 12
- 238000001947 vapour-phase growth Methods 0.000 claims description 11
- 239000012159 carrier gas Substances 0.000 claims description 2
- 125000002524 organometallic group Chemical group 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 21
- 238000000034 method Methods 0.000 abstract description 9
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract description 4
- 230000004888 barrier function Effects 0.000 abstract description 3
- 229910000070 arsenic hydride Inorganic materials 0.000 abstract description 2
- 238000010030 laminating Methods 0.000 abstract 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 11
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 10
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 7
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000927 vapour-phase epitaxy Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 240000002329 Inga feuillei Species 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は組成物の異なる結晶層を急峻な界面で、安定か
つ簡便に積層することのできる気相成長装置に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a vapor phase growth apparatus that can stably and easily laminate crystal layers of different compositions at steep interfaces.
従来の技術
半導体装置を製作する場合、必要となる半導体結晶のエ
ピタキシャル成長技術の中に、ガスを原料として用い、
その熱分解反応を利用して結晶成長する気相成長法があ
る。この成長法の特徴として、大面積の成長や多数枚の
ウェハーに一度に成長させるといった量産性がある。第
３図にこのような気相成長法の１例を示す これは原料
に有機金属化合物を用いた有機金属気相成長法（Ｍｅ
ｔ ａ １０ｒｇａｎｉｃ Ｖａｐｏｒ Ｐｈａｓｅ
Ｅｐｉｔａｘｙ；略してＭＯＶＰＥ法）によりＩｎＰ
基板上にＩｎ１．、−、Ｇａ工ＡｓｙＰ１−ｙを成長す
る場合のＭ○ＶＰＥ装置のガス系統の概略である。半導
体レーザなどのデバイスや超格子構造を形成する場合、
組成の異なる結晶層を積層する。Conventional technology When manufacturing semiconductor devices, the epitaxial growth technology for semiconductor crystals that is required involves using gas as a raw material.
There is a vapor phase growth method that uses the thermal decomposition reaction to grow crystals. A feature of this growth method is that it can be mass-produced by growing large areas and growing many wafers at once. Figure 3 shows an example of such a vapor phase growth method. This is a metal organic vapor phase growth method (Me
t a 10rganic Vapor Phase
InP by Epitaxy (abbreviated as MOVPE method)
In1. , -, This is an outline of the gas system of the M○VPE apparatus when growing Ga-based AsyP1-y. When forming devices such as semiconductor lasers or superlattice structures,
Layering crystal layers with different compositions.
気相成長法では、各原料ガスの供給量を調整、制御する
ことによって、組成をいろいろ変化させることができる
。例えば組成Ｘは、Ｉｎの原料であるトリエチルインジ
ウム（（Ｃ２Ｈ５）３Ｉｎ、 ＴＥＩ ）とＧａの原料
であるトリエチルガリウム（（Ｃ２Ｈ５）３ＧａＴＥＧ
）の供給量をそれぞれの流量制御装置４１および４２で
調節することによって、変化させることができる。一方
組成ｙの方も同様に、Ｐの原料ガスであるホスフィン（
ＰＨ３）とＡｓの原料ガスであるアルシン（Ａ ｓ Ｈ
ｓ ）の供給量をそれぞれの流量制御装置４３および４
４で調節することによって変化させることができる。し
たがって、組成の異なる結晶を積層する場合、下の層を
成長した後に、それぞれの流量制御装置を調節し、上の
層を成長するための原料ガス供給量にしてから、積層を
始゛めることになる。In the vapor phase growth method, the composition can be varied in various ways by adjusting and controlling the supply amount of each source gas. For example, composition
) can be varied by adjusting the supply amount with the respective flow control devices 41 and 42. On the other hand, for composition y, phosphine (
PH3) and arsine (A s H
s) is controlled by the respective flow rate controllers 43 and 4.
It can be changed by adjusting 4. Therefore, when stacking crystals with different compositions, after growing the lower layer, adjust each flow rate control device to set the raw material gas supply amount for growing the upper layer, and then start stacking. It turns out.
発明が解決しようとする問題点
ところが組成の異なる結晶を連続して積層する場合、成
長する結晶の組成に応じて原料ガスの供給量を調節、制
御しなければならない。したがって、下の結晶層を成長
した後、その上の結晶層を成長する前に原料ガスの流量
制御装置を調節する時間が必要となる。この間に結晶成
長を連続して行なうと組成が変化し、結晶性の悪い遷移
層ができてしまい、積層した界面の急峻性は非常に悪く
なってしまう。これを防ぐためには、原料ガスの成長炉
への供給を止めて流量調節を行うが、これではでは積層
する層が多くなるにつれて、成長時間が長くなる結果と
なる。特に数十層も積層する超格子構造を形成する場合
は、非常に長時間になってしまう。更に流量調節装置で
もってその都度流量調節するため、超格子構造のように
何回も同じ組成の結晶の積層がある場合、流量調節のく
り返し精度によって、それぞれの結晶の組成にばらつき
が生じる。Problems to be Solved by the Invention However, when crystals of different compositions are successively stacked, the amount of raw material gas supplied must be adjusted and controlled depending on the composition of the growing crystals. Therefore, after growing the lower crystal layer and before growing the upper crystal layer, time is required to adjust the flow rate control device for the raw material gas. If crystal growth is performed continuously during this period, the composition changes, a transition layer with poor crystallinity is formed, and the steepness of the laminated interface becomes extremely poor. In order to prevent this, the supply of raw material gas to the growth furnace is stopped and the flow rate is adjusted, but this results in a longer growth time as the number of layers increases. In particular, when forming a superlattice structure consisting of several tens of layers, the process takes a very long time. Furthermore, since the flow rate is adjusted each time by a flow rate adjustment device, when crystals of the same composition are stacked many times as in a superlattice structure, the composition of each crystal will vary depending on the repeat accuracy of flow rate adjustment.
本発明はかかる点を鑑みてなされたもので、組成の異な
る結晶を積層する場合、急峻な界面で安定かつ簡便に積
層することのできる気相成長装置を提供することを目的
としている。The present invention has been made in view of the above, and an object of the present invention is to provide a vapor phase growth apparatus that can stably and easily stack crystals having different compositions at steep interfaces.
問題点を解決するだめの手段
前述の問題点を解決するだめの技術的手段は、気相成長
装置において、第１のガス流量制御装置を備え、成長炉
にガスを供給するガス供給管と、第２のガラス流量制御
装置とガスの流れを制御する弁を備え、前記第１のガス
流量制御装置以降の前記ガス供給管の部分で分岐し、前
記第１のガス供給管を流れるガスの一部を分流する少な
くとも１本以上のガス分流管とを備えていることである
。Means for Solving the Problems A technical means for solving the above-mentioned problems is to provide a vapor phase growth apparatus with a gas supply pipe that includes a first gas flow rate control device and supplies gas to the growth furnace; A second glass flow rate control device and a valve for controlling the flow of gas are provided, the gas supply pipe is branched at a portion of the gas supply pipe after the first gas flow rate control device, and a part of the gas flowing through the first gas supply pipe is branched. and at least one gas distribution pipe for dividing the gas flow.
作 用 この技術的手段による作用は次のようになる。For production The effect of this technical means is as follows.
第１のガス流量制御装置によって一定流量に制御され、
成長炉に供給されるガスの一部を、第２のガス流量制御
装置によって設定されたある流量だけ、弁を開けて分枝
し、分流することによって、成長炉に供給される原料ガ
スの供給量を第１のガス流量制御装置による流量から、
その流量から第２のガス流量制御装置による流量を差し
引いだ流量に変化させることができる。また弁を閉じガ
スの分流を止めることで、前述とは逆のガス流量の変化
も可能である。このため原料ガスの供給量を弁の開閉操
作で変化させることが可能となるので、組成の異なる結
晶を急峻な界面で、安定かつ簡便に積層することができ
る。controlled to a constant flow rate by a first gas flow rate controller;
Supply of raw material gas to be supplied to the growth furnace by opening a valve and branching a part of the gas supplied to the growth furnace by a certain flow rate set by a second gas flow rate control device. amount from the flow rate by the first gas flow rate controller,
The flow rate can be changed to a value obtained by subtracting the flow rate by the second gas flow rate control device from the flow rate. Furthermore, by closing the valve and stopping the gas flow division, it is also possible to change the gas flow rate in the opposite manner to that described above. Therefore, it is possible to change the supply amount of the raw material gas by opening and closing the valve, so that crystals having different compositions can be stacked stably and easily at a steep interface.
実施例
以下、本発明の一実施例として、ＭＯＶＰＥ法により１
．１ ｐｍ ＩｎＧａＡｓＰと１，３ ｐｍ ＩｎＧａ
ＡｓＰとからなる超格子構造を形成する場合について図
面とともに説明する。なおこの超格子構造は、多重量子
井戸型レーザ（ＭＱＷＬＤ）の活性層として用いられ、
通常のＩｎＰと１．３μｍ帯ＩｎＧａＡｓＰとからなる
ＭＱＷ−ＬＤよりも電流の流入効率が向上しすぐれた発
光効率を示す。さて、Ｉｎ、Ｇａ。Example Hereinafter, as an example of the present invention, 1
．． 1 pm InGaAsP and 1,3 pm InGa
The case of forming a superlattice structure made of AsP will be explained with reference to the drawings. This superlattice structure is used as the active layer of a multiple quantum well laser (MQWLD).
The current flow efficiency is improved and the light emitting efficiency is superior to that of an MQW-LD made of ordinary InP and 1.3 μm band InGaAsP. Now, In, Ga.
Ａｓ、Ｐの結晶成長用の原料ガスとしては、それぞれト
リエチルインジウム（ＴＥＩ ）、 トリエチルガリウ
ム（ＴＥＧ）、アルシン（ＡｓＨ３）、ボスフィン（Ｐ
Ｈ３）が用いられる。有機金属であるＴＥＩ。Raw material gases for crystal growth of As and P include triethyl indium (TEI), triethyl gallium (TEG), arsine (AsH3), and bosphin (P), respectively.
H3) is used. TEI is an organic metal.
ＴＥＧは蒸気圧の比較的高い液体であるため、キャリア
ガス（水素ガス）を通すことによって、蒸気ガスの形で
供給することになる。成長に用いた本発明の一実施例で
あるＭＯＶＰＥ装置のガス系統の概略を第１図に示す。Since TEG is a liquid with relatively high vapor pressure, it is supplied in the form of vapor gas by passing carrier gas (hydrogen gas) through it. FIG. 1 shows an outline of the gas system of the MOVPE apparatus used for growth, which is an embodiment of the present invention.
次に超格子構造の障壁層である１、１μｍ Ｉ心ａＡｓ
Ｐと井戸層の１．３μｍ Ｉ ｎＧａＡｓ Ｐの結晶
成長時の原料ガスの供給量を次表に示す。なお、ＴＥＩ
、ＴＥＧについては、それぞれのバブラー容器に送る水
素ガスの流量で示しである。Next, a barrier layer with a superlattice structure of 1.1 μm I-core aAs
The following table shows the amount of raw material gas supplied during crystal growth of P and the well layer of 1.3 μm InGaAs P. In addition, TEI
, TEG is indicated by the flow rate of hydrogen gas sent to each bubbler container.
各原料の供給量
そこでまずＴＥＩの第１のガス流量制御装置１の流量を
３８０ＣＯ／ｇｉｎに調節しておき、第２のガス流量制
御装置２の流量を８０ＣＱ／ｓｉｎとしておく。また、
ＴＥＧの第１０ガス流量制御装置３の流量を１６０ＣＣ
／／ｊＩｉｎ １第２のガス流量制御装置４の流量を５
５ｃｃ７ｎｉｎとしておく。一方ＰＨ３の第１のガス流
量制御装置５の流量を１９．５Ｃンｉ とし、第２のガ
ス流量制御装置６の流量を９．５ ＱＣＡｉｎ として
、更にＡ ｓ Ｈ３の第１のガス流量制御装置７の流量
を１、４（Ｌ／ｓｉｎとし、第２のガス流量制御装置８
の流量を０．９Ｃ□ｉｎとしておく。さて超格子構造の
障壁層である１、１μｍ ＩｎＧａＡｓＰを成長すると
きは、ＴＥＩのガス分流管９の弁１０を閉じ、ＴＥＧの
ガス分流管１１の弁１２を開く。一方ＰＨ３のガス分流
管１３の弁１４を閉じ、Ａ ｓ Ｈ３のガス分流管１５
の弁１６を開く。各々のガス分流管９゜１１．１３，１
５は各々のガス供給管１７．１８゜１９ 、２０の第１
のガス流量制御装置１ 、３．５゜７以降の部分で分岐
２分流している。このため、ＴＥＩの供給量は第１のガ
ス流量制御装置で調節された流量（３８０ＣＱ／’ｌｒ
ｎ ）のそのものとなるが、ＴＥＧの供給量は、弁１２
が開いて、ガスが分流管１１の方へ分流されるので、第
１のガス流量制御装置で調節された流量から第２のガス
流量制御装置で調節された流量を差し引いた流量（７６
Ｃ吠’ｓｉｎ ＝ １６０−８５ ）となる。同様にし
てＰＨ３゜Ａ ｓ Ｈ３の流量も求めると表に示しだ１
．１ ｐ ｍ ＩｎＧａＡｓＰの結晶成長の原料供給量
となる。Supply amount of each raw material First, the flow rate of the first gas flow rate control device 1 of the TEI is adjusted to 380 CO/gin, and the flow rate of the second gas flow rate control device 2 is set to 80 CQ/sin. Also,
The flow rate of TEG's 10th gas flow rate controller 3 is set to 160CC.
//jIin 1 Set the flow rate of the second gas flow rate controller 4 to 5
Set it to 5cc7nin. On the other hand, the flow rate of the first gas flow rate control device 5 of PH3 is set to 19.5 Ci, the flow rate of the second gas flow rate control device 6 is set to 9.5 QCAin, and the first gas flow rate control device of A s H3 7 is set to 1, 4 (L/sin), and the second gas flow rate controller 8
Let the flow rate be 0.9 C□in. Now, when growing 1.1 μm InGaAsP, which is a barrier layer with a superlattice structure, the valve 10 of the TEI gas distribution tube 9 is closed, and the valve 12 of the TEG gas distribution tube 11 is opened. On the other hand, close the valve 14 of the gas distribution pipe 13 of PH3, and close the valve 14 of the gas distribution pipe 15 of A s H3.
Open the valve 16. Each gas distribution pipe 9゜11.13,1
5 is the first of each gas supply pipe 17.18゜19, 20
The gas flow rate control device 1 branches the flow into two parts at 3.5°7 and beyond. Therefore, the supply amount of TEI is adjusted by the flow rate (380CQ/'lr) controlled by the first gas flow rate controller.
n), but the supply amount of TEG is the same as that of valve 12.
is opened and the gas is diverted toward the flow dividing pipe 11, so that the flow rate (76
C'sin = 160-85). In the same way, the flow rate of PH3゜A s H3 is calculated as shown in the table 1
．． This is the raw material supply amount for crystal growth of 1 pm InGaAsP.
次に井戸層である１、３μｍ ＩｎＧａＡｓＰの成長に
移るとき、弁１０と弁１４を開き、弁１２と弁１６を閉
じる。すると１．１μｍ ＩｎＧａＡｓＰの成長の場合
と同様に各原料ガスの供給量をみると表の１．３μｍＩ
ｎＧａＡｓ Ｐ の結晶成長の原料供給量になって
いることがわかる。このように弁１０，１２，１４゜１
６の開閉操作を繰り返すことによって１．１μｍＩｎＧ
ａＡｓＰと１．３ｐｍ ＩｎＧａＡｓＰ とからなる超
格子構造が形成される。形成された超格子構造の各層間
の急峻性は１５Å以下であり、従来の％以下になった。Next, when proceeding to the growth of 1.3 μm InGaAsP as a well layer, valves 10 and 14 are opened, and valves 12 and 16 are closed. Then, as in the case of the growth of 1.1 μm InGaAsP, looking at the supply amount of each source gas, it is 1.3 μmI as shown in the table.
It can be seen that the amount of raw material supplied for crystal growth of nGaAs P is the same. In this way valves 10, 12, 14゜1
By repeating the opening and closing operations in step 6, 1.1 μm InG
A superlattice structure consisting of aAsP and 1.3 pm InGaAsP is formed. The steepness between each layer of the formed superlattice structure was less than 15 Å, which was less than % of the conventional value.
なおそれぞれの原料ガスはガス供給管１７．１８，１９
．２０を通じ成長炉２１へ供給される。基板２２は高周
波コイル２３による誘導加熱によって成長温度に加熱さ
れたサセプター２４に載置されている。また成長炉２１
内は減圧ポンプ２５により１００ Ｔｏｒｒに減圧され
る。まだ今回はガス流量制御装置としてマスフローコン
トローラを用いたが、これに限らず任意にガス流量を設
定、制御できるものであればよい。In addition, each raw material gas is supplied through gas supply pipes 17, 18, 19.
．． It is supplied to the growth furnace 21 through 20. The substrate 22 is placed on a susceptor 24 which is heated to a growth temperature by induction heating by a high frequency coil 23. Also, growth furnace 21
The inside pressure is reduced to 100 Torr by a pressure reduction pump 25. Although a mass flow controller was used as the gas flow rate control device this time, the present invention is not limited to this, and any device that can arbitrarily set and control the gas flow rate may be used.
以上述べてきたように本発明によれば、従来のようにガ
ス流量制御装置の流量をいちいち調節することなく、弁
の開閉操作のみで、組成の異なる結晶の積層が可能とな
る。しだがって流量調節に要する時間も不必要となり省
くことができた。更に結晶層間の界面の急峻性が向上し
た。また流量調節のくり返しによる流量の設定精度の低
下がなくなり、同じ組成の結晶間での組成のバラツキを
約２５％低減することができた。しかも流量調節すると
きに生じる調節ミスが全くなくなった。As described above, according to the present invention, crystals having different compositions can be stacked by simply opening and closing a valve, without adjusting the flow rate of a gas flow rate control device each time as in the conventional case. Therefore, the time required for adjusting the flow rate became unnecessary and could be saved. Furthermore, the steepness of the interface between crystal layers was improved. Furthermore, there was no reduction in the accuracy of flow rate setting due to repeated flow rate adjustments, and compositional variations between crystals of the same composition could be reduced by about 25%. Furthermore, there are no errors in adjustment that occur when adjusting the flow rate.
次に本発明の第２の実施例であるＭＯＶＰＥ 装置のガ
ス系統の概略図を第２図に示す。大部分は第１図で示し
たＭＯＶＰＥ 装置と同じであるので、異なる点につ
いてのみ説明する。ＴＥＩおよびＴＥＧのガス分流管９
，１１は、それぞれのガス供給管１７．１８の第１のガ
ス流量制御装置１゜３と結晶成長用原料供給源であるＴ
ＥＩおよびＴＥＧのバブラー容器３７．３８との間で分
枝し・分流し、第２のガス流量制御装置２，４と弁１０
゜１２を備えたあと、再びガス供給管１７．１８のそれ
ぞれのバブラー容器３７．３８と成長炉２１までの間で
接続２合流している。Next, FIG. 2 shows a schematic diagram of a gas system of a MOVPE apparatus according to a second embodiment of the present invention. Since most of the components are the same as the MOVPE device shown in FIG. 1, only the different points will be described. TEI and TEG gas flow pipe 9
, 11 are the first gas flow rate control device 1゜3 of each gas supply pipe 17, 18 and T, which is a raw material supply source for crystal growth.
Branching/division between the EI and TEG bubbler containers 37 and 38, and the second gas flow control devices 2 and 4 and the valve 10
12, the gas supply pipes 17, 18 are connected again to the connection 2 between each bubbler container 37, 38 and the growth furnace 21.
したがって弁１０．１２が開き、ガス分流管９゜１１に
分流されたガスは、結晶成長用原料供給源であるＴＥＩ
やＴＥＧのバブラー容器３７ 、３８を通らずに、再び
ガス供給管１７．１８と合流して成長炉２１へ供給され
る。このだめ、ＴＥＩやＴＥＧ側から成長炉へ供給され
るガスの総流量は、原料ガスが変化しても、常に一定で
ある。したがって成長炉内のガスの流量は、ＴＥＩやＴ
ＥＧの原料ガス供給量を変化させても一定となり、流れ
方に変動が生じないため、良好な界面をもつ積層が可能
となる。なおこの実施例では、分流管９゜１１の一方を
バブラー容器３７．３８以降のガス供給管１７．１８に
接続させ、ガスを合流させたが、直接、成長炉２１へ接
続してもよく、また成長炉２１へ接続されている他のガ
ス管、例えばガス管３１．３２に接続してもかまわず効
果は同じである。Therefore, the valve 10.12 is opened, and the gas diverted to the gas distribution pipe 9.11 is transferred to the TEI, which is the raw material supply source for crystal growth.
The gas does not pass through the bubbler containers 37 and 38 of the TEG, but joins the gas supply pipes 17 and 18 again and is supplied to the growth furnace 21. However, the total flow rate of gas supplied from the TEI or TEG side to the growth furnace is always constant even if the raw material gas changes. Therefore, the gas flow rate in the growth reactor is
Even if the raw material gas supply amount of EG is changed, it remains constant and there is no change in the flow direction, making it possible to stack layers with good interfaces. In this embodiment, one side of the branch pipe 9.11 was connected to the gas supply pipe 17.18 after the bubbler container 37.38 to merge the gases, but it may also be directly connected to the growth furnace 21. Further, the same effect can be achieved even if the gas pipes 31 and 32 are connected to other gas pipes connected to the growth furnace 21, for example, gas pipes 31 and 32.
また、第２図に示しだ実施例のＭＯＶＰＥ装置において
も弁１０，１２，１４．１６の操作によって原料ガスの
供給量を変化させることができ、ガス流量制御装置の流
量を調節することなく、組成の異なる結晶の積層が、安
定かつ簡便に行うことができる。Also, in the MOVPE apparatus of the embodiment shown in FIG. 2, the supply amount of the raw material gas can be changed by operating the valves 10, 12, 14, and 16, without adjusting the flow rate of the gas flow rate control device. Lamination of crystals with different compositions can be performed stably and easily.
以上の説明において、Ｉ ｎＧａＡｓ Ｐ を成長する
ＭＯＶＰＥ装置を用いたが、原料にガスを用いて結晶成
長する気相成長装置であれば、一般のＶＰＥ（Ｖａｐｏ
ｒ Ｐｈａｓｅ Ｅｐｉｔａｘｙ ）装置の場合でも本
発明を適用される。In the above explanation, a MOVPE apparatus for growing InGaAs P was used, but a general VPE (Vapo
The present invention is also applicable to the case of a (Phase Epitaxy) device.
更に、ガス分流管は説明では１本であったが、異なる組
成の結晶層の数と同数本のガス分流管があり、それぞれ
のガス流量制御装置の流量をあらかじめ設定しておけば
、二つ以上の異なる組成の結晶層の積層の場合でも本発
明と同様の効果が得られ、本発明を適用できる。Furthermore, although there was only one gas distribution tube in the explanation, there are as many gas distribution tubes as there are crystal layers with different compositions, and if the flow rate of each gas flow rate control device is set in advance, two gas distribution tubes can be used. Even in the case of stacking crystal layers having different compositions as described above, the same effects as the present invention can be obtained and the present invention can be applied.
発明の効果
以上のように本発明によれば、ガス流量制御装置による
ガス流量調節を各結晶層の成長毎に行うことなく、ただ
弁の開閉操作のみで、組成の異なる結晶の積層が可能と
なる。したがって成長途中での流量調節に要する時間、
調節の際の設定のバラツキから生じる組成のバラツキ、
結晶性や膜質の低下を除くことができ、結晶成長工程の
点から、品質、生産性が向上する。Effects of the Invention As described above, according to the present invention, it is possible to stack crystals with different compositions by simply opening and closing a valve, without having to adjust the gas flow rate using a gas flow rate controller every time each crystal layer grows. Become. Therefore, the time required to adjust the flow rate during growth,
Variations in composition resulting from variations in settings during adjustment,
Deterioration in crystallinity and film quality can be eliminated, and quality and productivity are improved in terms of the crystal growth process.
第１図は本発明の一実施例のＭＯＶＰＥ 装置のガス系
統の概略図、第２図は本発明の他の第２の実施例のＭＯ
ＶＰＥ 装置のガス系統の概略図、第３図は従来のＭＯ
ＶＰＥ装置のガス系統の概略図である。
１．３，５，７・・・・・・第１のガス流量制御装置、
２．４，６．８・・・・・・第２のガス流量制御装置、
９゜１１．１３．１６・・・・・・ガス分、流管、１０
，１２゜１４．１６・・・・・・弁、１７，１８，１９
．２０・・・・・・ガス供給管、２１・・・・・・成長
炉、３１．３２・・・・・・他のガス管、３７．３８・
・・・・・結晶成長用原料供給源。FIG. 1 is a schematic diagram of a gas system of an MOVPE apparatus according to an embodiment of the present invention, and FIG.
A schematic diagram of the gas system of the VPE equipment, Figure 3 is a conventional MO
FIG. 2 is a schematic diagram of a gas system of a VPE device. 1.3, 5, 7...first gas flow rate control device,
2.4, 6.8... Second gas flow rate control device,
9゜11.13.16...Gas component, flow tube, 10
, 12゜14.16... Valve, 17, 18, 19
．． 20...Gas supply pipe, 21...Growth furnace, 31.32...Other gas pipes, 37.38.
... Raw material supply source for crystal growth.
Claims (4)
供給するガス供給管と、第２のガス流量制御装置とガス
の流れを制御する弁を備え、前記第１のガス流量制御装
置以降の前記ガス供給管部分で分枝し前記ガス供給管を
流れるガスの一部を分流する、少なくとも１本以上のガ
ス分流管とを備えたことを特徴とする気相成長装置。(1) A first gas flow rate control device, comprising a gas supply pipe for supplying gas to the growth furnace, a second gas flow rate control device and a valve for controlling the flow of gas, and the first gas flow rate control device; A vapor phase growth apparatus comprising: at least one gas branching pipe branching at a portion of the gas supplying pipe after the apparatus and branching off a part of the gas flowing through the gas supplying pipe.
あるいはその混合ガスである特許請求の範囲第１項記載
の気相成長装置。(2) The vapor phase growth apparatus according to claim 1, wherein the gas is a raw material gas for crystal growth, a carrier gas, or a mixed gas thereof.
装置から結晶成長用原料供給源との間で分枝し、前記結
晶成長用原料供給源から成長炉までの間で再び合流する
ように接続、もしくは成長炉に直接接続、もしくは、成
長炉に接続されている他のガス管に接続されているガス
分流管である特許請求の範囲第１項記載の気相成長装置
。(3) The gas distribution pipe branches from the first gas flow rate control device of the gas supply pipe to the crystal growth raw material supply source, and rejoins between the crystal growth raw material supply source and the growth furnace. The vapor phase growth apparatus according to claim 1, which is a gas distribution pipe connected to the growth furnace, directly connected to the growth furnace, or connected to another gas pipe connected to the growth furnace.
ある特許請求の範囲第３項記載の気相成長装置。(4) The vapor phase growth apparatus according to claim 3, wherein the raw material source for crystal growth is an organometallic bubbler container.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16406386A JPS6319813A (en) | 1986-07-11 | 1986-07-11 | Vapor growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16406386A JPS6319813A (en) | 1986-07-11 | 1986-07-11 | Vapor growth equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6319813A true JPS6319813A (en) | 1988-01-27 |
Family
ID=15786076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16406386A Pending JPS6319813A (en) | 1986-07-11 | 1986-07-11 | Vapor growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6319813A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0428227A (en) * | 1990-05-23 | 1992-01-30 | Mitsubishi Electric Corp | Substrate processing |
-
1986
- 1986-07-11 JP JP16406386A patent/JPS6319813A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0428227A (en) * | 1990-05-23 | 1992-01-30 | Mitsubishi Electric Corp | Substrate processing |
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