JPS63197343A - Thermal treatment device - Google Patents
Thermal treatment deviceInfo
- Publication number
- JPS63197343A JPS63197343A JP3035487A JP3035487A JPS63197343A JP S63197343 A JPS63197343 A JP S63197343A JP 3035487 A JP3035487 A JP 3035487A JP 3035487 A JP3035487 A JP 3035487A JP S63197343 A JPS63197343 A JP S63197343A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- heat treatment
- valve
- line
- tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007669 thermal treatment Methods 0.000 title 1
- 238000010438 heat treatment Methods 0.000 claims abstract description 28
- 239000007789 gas Substances 0.000 abstract description 40
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 7
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract 1
- 238000007670 refining Methods 0.000 abstract 1
- 230000001172 regenerating effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Incineration Of Waste (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体工業において使用される熱処理装置に
関し、特に、ガスの再製ラインに関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to heat treatment equipment used in the semiconductor industry, and in particular to gas remanufacturing lines.
従来の技術
従来、この種の熱処理装置は第2図に示すようなもので
、ガス供給ライン6から供給されて第1ガス精製機4で
精製されたガスは、導入ライン3を通って熱処理装置内
のチューブ1に導入された後、全て排気ライン2を通っ
て排気されるというものであった。2. Description of the Related Art Conventionally, this type of heat treatment apparatus is as shown in FIG. After being introduced into the inner tube 1, it was all exhausted through the exhaust line 2.
発明が解決しようとする問題点
第2図に示す従来の熱処理装置システムでは、チューブ
1に導入されたガスは全て排気ライ/2を通って排気さ
れておシ、また、チューブ1の清浄を保つために熱処理
を行なっていない時でも大量の窒素ガスがチューブ1内
に導入されていた。Problems to be Solved by the Invention In the conventional heat treatment system shown in FIG. 2, all the gas introduced into the tube 1 is exhausted through the exhaust line/2, and the tube 1 is kept clean. Therefore, a large amount of nitrogen gas was introduced into the tube 1 even when no heat treatment was performed.
それ故、クエハが大口径化してチューブ10口径および
内容積が大きくなるに従って、無駄にすてられるガスが
非常に大きくなってきた。Therefore, as the diameter of the quefer becomes larger and the diameter and internal volume of the tube 10 become larger, the amount of gas that is wasted becomes extremely large.
本発明は、°熱処理を行なっていない時に大量に捨てら
れていたガスを再利用することを目的とするものである
。The object of the present invention is to reuse gas that was discarded in large quantities when heat treatment was not performed.
問題点を解決するための手段
本発明の熱処理装置は、ガス供給ラインから送られてき
たガスをガス精製機で精製して熱処理部に導入し、被処
理物を熱処理する装置であって、熱処理部を出たガスを
再製して再び熱処理部に導入する機構を有するものであ
る。Means for Solving the Problems The heat treatment apparatus of the present invention is an apparatus for heat-treating the object to be treated by purifying gas sent from a gas supply line using a gas purifier and introducing it into a heat treatment section. It has a mechanism to regenerate the gas that exits the heat treatment section and reintroduce it into the heat treatment section.
作用
本発明によれば、熱処理を行っていない時に通常すてら
れている窒素等のガスを再利用することが可能となる。Effect: According to the present invention, it is possible to reuse gas such as nitrogen, which is normally wasted when no heat treatment is performed.
実施例 第1図は本発明の一実施例にかかる熱処理装置を示す。Example FIG. 1 shows a heat treatment apparatus according to an embodiment of the present invention.
第1図の熱処理装置は、熱処理部となるチューブ1から
出たガスを再製して第1ガス精製機にもどすための第1
弁8、第2弁9、ガス再製ライン7、第2ガス精製機e
、第3弁10.第4弁11、第5弁12などをもっこと
である。この特徴によって、熱処理を行なっていない時
に大量にすてられていた窒素ガスを再利用することがで
きる。The heat treatment apparatus shown in FIG.
Valve 8, second valve 9, gas remanufacturing line 7, second gas purifier e
, third valve 10. A fourth valve 11, a fifth valve 12, etc. are also included. This feature makes it possible to reuse a large amount of nitrogen gas that was wasted when no heat treatment was performed.
半導体基板が内部で熱処理されるチューブ1がら出たガ
スを再利用する時としない時とでガスのラインを排気ラ
イン2とガス再製ライン7とに切り換えることで、ガス
の再利用が可能となる。By switching the gas line between the exhaust line 2 and the gas remanufacturing line 7 depending on when the gas discharged from the tube 1 in which the semiconductor substrate is heat-treated is to be reused or not, the gas can be reused. .
熱処理を行なっていない時には、第1弁8を開けて第2
弁9を閉じ、チューブ1から出たガスを排気ライン2か
らガス再製ライン7に切換えて流す。ガス精製ライン7
を通ったガスは、第2ガス精製機で再製されて開けられ
ている第3弁1oを通って第1ガス精製機4に再供給さ
れて精製された後、再び導入ライン3を通ってチューブ
1に導入される。この時、チューブ1から出たガスを全
て再利用するなら、第4弁11と第6弁12は閉じる。When heat treatment is not being performed, the first valve 8 is opened and the second valve 8 is opened.
The valve 9 is closed, and the gas coming out of the tube 1 is switched from the exhaust line 2 to the gas remanufacturing line 7 to flow. Gas purification line 7
The passed gas is regenerated in the second gas purifier, passed through the opened third valve 1o, and resupplied to the first gas purifier 4 for purification, and then passed through the introduction line 3 again into the tube. 1 will be introduced. At this time, if all the gas coming out of the tube 1 is to be reused, the fourth valve 11 and the sixth valve 12 are closed.
一部を再利用するなら、第4弁11と第5弁12は開け
る。If a portion is to be reused, the fourth valve 11 and the fifth valve 12 are opened.
また、チューブ1から出たガスの大気の混入が大きい場
合を考えて第2ガス精製機6をガス再製ラインT内に入
れであるが、大気の混入が少ない場合には第2ガス精製
機6はなくてもよい。In addition, the second gas purifier 6 is placed in the gas remanufacturing line T in case the gas coming out of the tube 1 is mixed with a large amount of air, but if the amount of air mixed in is small, the second gas purifier 6 It doesn't have to be there.
発明の効果
本発明の熱処理装置を使用することによって、熱処理を
行なっていない時に大量に捨てられていた窒素ガスを再
利用することができる。半導体工業においてウェハの大
口径化が進み、それと共に無駄にすてられるガスが非常
に大きくなっている今日、本発明の熱処理装置システム
は極めて価値の高いものである。Effects of the Invention By using the heat treatment apparatus of the present invention, it is possible to reuse nitrogen gas that was thrown away in large quantities when heat treatment was not performed. In today's world, where wafer diameters are increasing in the semiconductor industry and the amount of gas being wasted is increasing, the heat treatment system of the present invention is of extremely high value.
第1図は本発明の一実施例の熱処理装置の概略構成図、
第2図は従来例の概略構成図である。
1・・・・・・チューブ、2・・・・・・排気ライン、
3・・・・・・導入ライン、4・・・・・・第1ガス精
製機、5・・・・・・ガス供給ライン、6・・・・・・
第2ガス精製機、7・・・・・・ガス再製ライン、8〜
12・・・・・・弁。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名!−
づl−フ゛ 7−カヌJ1Nライン?−署
ト筑うΔン 8−升
J−−調入ライン 9−升
4−第1πスa貰 10−弁FIG. 1 is a schematic configuration diagram of a heat treatment apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a conventional example. 1...tube, 2...exhaust line,
3...Introduction line, 4...First gas purifier, 5...Gas supply line, 6...
Second gas purifier, 7...Gas remanufacturing line, 8~
12... Valve. Name of agent: Patent attorney Toshio Nakao and 1 other person! −
Zl-F 7-Kanu J1N line? -Signing Δn 8-Sho J--Procurement line 9-Sho 4-1st π space a 10-Valve
Claims (1)
製して熱処理部に導入して被処理物を熱処理する熱処理
装置であって、前記熱処理部を出たガスを再製して前記
熱処理部に再び導入する機構を設けてなる熱処理装置。A heat treatment apparatus that purifies gas sent from a gas supply line using a gas purifier and introduces it into a heat treatment section to heat treat the object to be treated, the gas leaving the heat treatment section being regenerated and sent to the heat treatment section. A heat treatment device equipped with a mechanism for reintroduction.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3035487A JPS63197343A (en) | 1987-02-12 | 1987-02-12 | Thermal treatment device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3035487A JPS63197343A (en) | 1987-02-12 | 1987-02-12 | Thermal treatment device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63197343A true JPS63197343A (en) | 1988-08-16 |
Family
ID=12301515
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3035487A Pending JPS63197343A (en) | 1987-02-12 | 1987-02-12 | Thermal treatment device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63197343A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003051505A (en) * | 2001-06-01 | 2003-02-21 | Semiconductor Energy Lab Co Ltd | Apparatus and method for heat treatment |
US7879693B2 (en) | 2001-06-01 | 2011-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Thermal treatment equipment and method for heat-treating |
US7974524B2 (en) | 2001-03-16 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Heat treatment apparatus and heat treatment method |
-
1987
- 1987-02-12 JP JP3035487A patent/JPS63197343A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7974524B2 (en) | 2001-03-16 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Heat treatment apparatus and heat treatment method |
US9666458B2 (en) | 2001-03-16 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Heat treatment apparatus and heat treatment method |
JP2003051505A (en) * | 2001-06-01 | 2003-02-21 | Semiconductor Energy Lab Co Ltd | Apparatus and method for heat treatment |
US7879693B2 (en) | 2001-06-01 | 2011-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Thermal treatment equipment and method for heat-treating |
US7923352B2 (en) | 2001-06-01 | 2011-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Thermal treatment equipment and method for heat-treating |
US8318567B2 (en) | 2001-06-01 | 2012-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Thermal treatment equipment and method for heat-treating |
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