JPS63190789A - Ceramic etched formed products and manufacture - Google Patents
Ceramic etched formed products and manufactureInfo
- Publication number
- JPS63190789A JPS63190789A JP4466686A JP4466686A JPS63190789A JP S63190789 A JPS63190789 A JP S63190789A JP 4466686 A JP4466686 A JP 4466686A JP 4466686 A JP4466686 A JP 4466686A JP S63190789 A JPS63190789 A JP S63190789A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic
- aqueous solution
- phosphoric acid
- etching
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 37
- 238000005530 etching Methods 0.000 claims description 20
- 239000007864 aqueous solution Substances 0.000 claims description 16
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 5
- 235000011007 phosphoric acid Nutrition 0.000 description 16
- 238000000034 method Methods 0.000 description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- UEZVMMHDMIWARA-UHFFFAOYSA-N Metaphosphoric acid Chemical compound OP(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000018044 dehydration Effects 0.000 description 3
- 238000006297 dehydration reaction Methods 0.000 description 3
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229940005657 pyrophosphoric acid Drugs 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- QVLTXCYWHPZMCA-UHFFFAOYSA-N po4-po4 Chemical compound OP(O)(O)=O.OP(O)(O)=O QVLTXCYWHPZMCA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004421 molding of ceramic Methods 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Landscapes
- Devices For Post-Treatments, Processing, Supply, Discharge, And Other Processes (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（産業上の用分野）
この発明はセラミックスをエツチング手段にて成形しよ
うとするセラミックスのエツチング成形品及びその製造
方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Field) The present invention relates to an etched ceramic molded article formed by etching a ceramic and a method for manufacturing the same.
（従来の技術）
従来、セラミックスの成形加工には研削加工、超音波加
工、噴射加工等の如く物理的加工によって専ら行われて
きた。セラミックスへのエツチングの適用は僅かセラミ
ックスの表面研磨に関するもの以外は全〈実施された形
跡がない。(Prior Art) Conventionally, the molding of ceramics has been carried out exclusively by physical processing such as grinding, ultrasonic processing, injection processing, and the like. There is no evidence that etching has been applied to ceramics at all, except for surface polishing of ceramics.
（発明が解決しようとしている問題点）上記の如き物理
的な手段によってセラミックスを成形加工する場合、通
常焼結前に軟弱材料を成形し、しかるのち窯内で焼結さ
れて所定の形状に成形されるが、この方法によると焼結
時の伸縮による成形精度が出ない欠点がある。また、焼
結後にグイシングツ−による切削手段による場合でも細
部の加工には不適当であるのは勿論、切削中にセラミッ
クスに割れ及び欠は等が生しる傾向がある他、このよう
な物理的な加工ではセラミック板面に溝状の加工をする
ことは事実上不可能である欠点がある。(Problem to be solved by the invention) When forming ceramics by physical means as described above, a soft material is usually formed before sintering, and then sintered in a kiln to form it into a predetermined shape. However, this method has the drawback that forming accuracy cannot be achieved due to expansion and contraction during sintering. Furthermore, even if cutting with a guissing tool is used after sintering, it is not only unsuitable for detailed machining, but also tends to cause cracks and chips in the ceramic during cutting. This process has the disadvantage that it is virtually impossible to process grooves on the ceramic plate surface.
この発明はこれらの問題点を解消させ、セラミックスを
加工成形精度の良好であって、しかも細部の加工にも適
応する量産可能のセラミックスのエツチング成形品及び
その製造方法を提供するものである。The present invention solves these problems and provides a ceramic etching molded product that can be mass-produced and has good precision in processing and molding ceramics, and is also suitable for detailed processing, and a method for manufacturing the same.
（問題点を解決するための手段）
この発明を以下添付図面に示す実施例に従って説明する
。(Means for Solving the Problems) The present invention will be described below according to embodiments shown in the accompanying drawings.
本願発明に於いて実施可能なセラミックスとして例えば
、ジルコニア（ＺｒＯ，） 、アルミナ（Ａｈ ｏ。Examples of ceramics that can be used in the present invention include zirconia (ZrO) and alumina (Aho).
）、窒化ケイン（ＳｉＪｎ ） 、炭化ケイン（ＳｉＣ
）、チタン酸バリウム（ＢａＴｉＯａ） 、チタン酸鉛
（ＰｂＴｉＯｓ） 、酸化亜鉛（ＺｎＯ）等のセラミッ
クスに対して有効である。), cane nitride (SiJn), cane carbide (SiC)
), barium titanate (BaTiOa), lead titanate (PbTiOs), zinc oxide (ZnO), and other ceramics.
以下の実施例において、上記のセラミックスの中エツチ
ング性の悪いと考えられているアルミナ（Ａｈ Ｏｓ）
の基材についてそのエツチング例を詳述する。In the following examples, alumina (Ah Os), which is considered to have poor etching properties in the above ceramics, was used.
An etching example will be described in detail for the base material.
内部にりん酸（オルソりん酸）水溶液（］）を入れ、こ
のりん酸水溶液（１）を約１７０〜３００’Ｃに加熱し
て耐える加工槽（２）が選ばれる。表面に怒光性耐熱コ
ーティング剤をフォトレジスト（３）としてスクリーン
印刷するか、又はフォトレジスト（３）をコーティング
した上で露光させる焼き行手段等によりパターン形成（
４）シてなるセラミックス基材（５）を上記加工槽（２
）内のりん酸水溶液ｆｉ＋に清浸し、りん酸水溶液（１
１をバーナー（６）等で加熱し、りん酸水溶液ｆｌ）を
約１７０〜３００”Ｃに加熱すると活発なエツチング現
象の発生が見られる。一般的にりんＭ（オルソりん酸）
水溶液（１）を加熱すると水分の蒸発がＰ２Ｏ，の重量
％で７２．４％以上進むとオルソりん酸がさらに水分を
失うことによって、ピロりん酸（Ｈ＝ Ｐｇ Ｏｖ ）
へ、更にメタりん酸（ＨＰＯ３）へと変質する。A processing tank (2) is selected that can hold a phosphoric acid (orthophosphoric acid) aqueous solution (]) inside and withstand heating of this phosphoric acid aqueous solution (1) to about 170 to 300'C. A pattern is formed by screen printing a photoresist (3) with an angry light-resistant heat-resistant coating agent on the surface, or by a baking method that coats the photoresist (3) and exposes it to light.
4) Put the ceramic base material (5) into the processing tank (2).
) in phosphoric acid aqueous solution fi+, and phosphoric acid aqueous solution (1
When 1 is heated with a burner (6) etc. and the phosphoric acid aqueous solution (fl) is heated to about 170 to 300"C, an active etching phenomenon is observed. Generally, phosphorus M (orthophosphoric acid)
When the aqueous solution (1) is heated, the evaporation of water progresses by 72.4% or more by weight of P2O, and orthophosphoric acid further loses water, resulting in pyrophosphoric acid (H = Pg Ov).
and further changes to metaphosphoric acid (HPO3).
実施例１
りん酸水溶液（１１を入れた加工槽（２）にセラミック
ス基材（５）を入れて加熱していけば、約１５０〜１６
０℃で沸騰しはじめ、りん酸水溶液（１）内の水分が大
きな気泡となって消失する。気泡が活発に発生している
ときは液温の上昇も遅い。Example 1 If a ceramic base material (5) is placed in a processing tank (2) containing a phosphoric acid aqueous solution (11) and heated, it will be approximately 150 to 16
It begins to boil at 0°C, and the water in the phosphoric acid aqueous solution (1) becomes large bubbles and disappears. When bubbles are actively generated, the temperature of the liquid rises slowly.
液温が約２５０６Ｃ程度では水分の蒸発による気泡は少
なくなるが、セラミックス基材（５）の溶解による気泡
の発生がセラミックス基材（５）の周囲に顕著に見られ
る。セラミックス基材（５）の溶解は液温が２９０〜３
００”Ｃに最も顕著である。しかしながら、この状態を
継続し液温を更に上昇させるにもかかわらずセラミック
ス基材（５）の溶解による気泡の発生は加熱時間と共に
少なくなる。エツチング深さを実際に測定しても加工深
さの増加率は時間と共に減少傾向を顕著に示している。When the liquid temperature is about 2506 C, the number of bubbles due to evaporation of water decreases, but the generation of bubbles due to melting of the ceramic base material (5) is noticeable around the ceramic base material (5). The ceramic base material (5) is melted at a liquid temperature of 290 to 3
However, even though this state is continued and the liquid temperature is further increased, the generation of bubbles due to melting of the ceramic base material (5) decreases with heating time. Even when measured, the increase rate of machining depth shows a remarkable tendency to decrease with time.
この理由は次のように考えることができる。即ち、りん
酸（オルソりん酸）を加熱すると水分の蒸発による脱水
によりピロりん酸（Ｈ４Ｐｇ Ｏｑ ）へ、更にメタり
ん酸（ＨＰＯｓ）へと変質することに起因するものとお
もわれる。The reason for this can be considered as follows. That is, it is believed that this is due to the fact that when phosphoric acid (orthophosphoric acid) is heated, it undergoes dehydration due to evaporation of water, resulting in its deterioration into pyrophosphoric acid (H4Pg Oq) and further into metaphosphoric acid (HPOs).
従って、この現象を抑制し、セラミックス基材（５）の
エツチング速度を速めるためには脱水によりピロりん酸
（８４Ｐｚ Ｏｔ ）へ、更にメタりん酸（ＨＰＯ３）
へと変質することを防ぐ必要があるものである。Therefore, in order to suppress this phenomenon and speed up the etching rate of the ceramic substrate (5), dehydration is performed to convert it into pyrophosphoric acid (84PzOt), and then metaphosphoric acid (HPO3).
It is necessary to prevent it from deteriorating into
実施例２
オルソりん酸Ｈｓ ｐｏ、（８５％）単独液に液量４０
０ＣＣ，１００”Ｃになったときセラミックス基材を入
れ、２９０ ＠Ｃに上昇後バーナーをゆるめて４０分エ
ツチングした。（最高液温３００”Ｃ）
上記のエツチング条件によった場合２９０”Ｃから５背
後３００’Ｃの液温で気泡の発生が急激に衰え以後時間
の経過と共に気泡の粒子が細かになり且つ衰えが激しく
なったエツチングの開始から３０分後からオルソりん酸
８３ ＰＯ４（８５％）単独液が白濁し、白煙が出はじ
める。Example 2 Orthophosphoric acid Hs po, (85%) liquid volume 40 in single solution
When the temperature reached 0cc, 100"C, a ceramic base material was put in, and after the temperature rose to 290@C, the burner was loosened and etching was carried out for 40 minutes. (Maximum liquid temperature 300"C) When the above etching conditions were used, etching was performed from 290"C. After 30 minutes from the start of etching, orthophosphoric acid 83 PO4 (85% ) The liquid becomes cloudy and white smoke begins to appear.
４０分エツチングした結果エツチング段差は０゜１８ミ
リメートルである。As a result of etching for 40 minutes, the etching step was 0° and 18 mm.
以上の結果から、エツチングの速度の減少は加熱による
脱水によるオルツリんｅｌＨｓｐｏａ→ビロりん酸（Ｈ
４Ｐｇ Ｏｔ ）−メタりん酸（ＨＰＯｓ）へと変質す
ることに起因していると考えられるから、セラミックス
基板のエツチングの速度を維持する条件はオルソりん酸
ＨｓＰＯｎのままでエツチングすることが必要である。From the above results, the decrease in the etching rate is due to the dehydration caused by heating.
This is thought to be caused by the deterioration into 4Pg Ot )-metaphosphoric acid (HPOs). Therefore, the conditions for maintaining the etching speed of the ceramic substrate are to perform etching with orthophosphoric acid HsPOn as it is. .
以上、セラミックスの中アルミナについて述べたが、他
のセラミックス例えばジルコニア（Ｚｒ（ｈ）、窒化ケ
イン（ＳｉＪａ ”） 、炭化ケイン（ＳｉＣ）、チタ
ン酸バリウム（３ａＴｉＯｓ） 、チタン酸鉛（ＰｂＴ
ｉ０３）、酸化亜鉛（ＺｎＯ）等についても上記の方法
は有効であることは言うまでもない。Above, we have described medium alumina in ceramics, but other ceramics such as zirconia (Zr(h), cane nitride (SiJa''), cane carbide (SiC), barium titanate (3aTiOs), lead titanate (PbT), etc.
It goes without saying that the above method is also effective for zinc oxide (ZnO), zinc oxide (ZnO), and the like.
（作用）
りん酸水溶液（１）を入れた加工槽（２）に−又は複数
のセラミックス基材（５）を入れ、約２５０”Ｃ程度で
加熱すればセラミックス基材（５）の溶解による活発な
気泡の発生がみられりん酸水溶液（１）内でセラミック
ス基材（５）のエツチング成形が達成される。(Function) If one or more ceramic substrates (5) are placed in the processing tank (2) containing the phosphoric acid aqueous solution (1) and heated at about 250"C, the ceramic substrates (5) will be actively dissolved. Etching formation of the ceramic substrate (5) was achieved in the phosphoric acid aqueous solution (1) with the generation of bubbles.
（発明の効果）
セラミックス基材の表面にを感光性耐熱コーティング剤
をレジストとしてパターン形成し、該パターンの形状に
従ってエツチングすることによりるセラミックスのエツ
チング成形品としであるので成形精度において従来のも
のとは比較にならない程の厳しい精度を達成することが
出来る。しかも工、チング手段による成形品であるので
成形面が非常に滑らかで商品価値を損なうことなく成形
することができる。又、従来の物理的な手段では成形出
来ない例えば所定の範囲に深溝を形成すること及び微細
なパターンのものでも容易に実施でき、しかも成形面に
欠けや割れも生じない。(Effects of the Invention) Since this is a ceramic etching molded product by forming a pattern on the surface of a ceramic base material using a photosensitive heat-resistant coating agent as a resist and etching it according to the shape of the pattern, the molding accuracy is superior to that of conventional products. can achieve incomparably tighter accuracy. Moreover, since it is a molded product by means of machining and chiming, the molding surface is extremely smooth and can be molded without impairing its commercial value. In addition, it is possible to easily form deep grooves in a predetermined range and to form fine patterns, which cannot be formed by conventional physical means, and there is no chipping or cracking of the molded surface.
更に、この発明は感光性耐熱コーティング剤をレジスト
としてセラミックス基材の表面にパターン形成した後、
表面にパターン形成されたセラミックス基材を加工槽内
のりん酸水溶液中に配置せしめ、上記りん酸水溶液を約
１７０〜３００℃の範囲内の液温でエツチングするよう
にしであるので、セラミックス基材を一時に多数の精度
ある成形が可能となるものである。Furthermore, this invention uses a photosensitive heat-resistant coating agent as a resist to form a pattern on the surface of a ceramic substrate, and then
The ceramic base material with a pattern formed on its surface is placed in a phosphoric acid aqueous solution in a processing bath, and the phosphoric acid aqueous solution is etched at a temperature within the range of approximately 170 to 300°C. This makes it possible to mold a large number of parts at once with high precision.
図面はこの発明の実施例を示すもので、第１図は使用状
態を示す断面図、第２図はパターン形成したセラミック
ス基材の断面図、第３図はセラミックスのエツチング成
形品の斜視図である。
ｆｌ＋・・・りん酸水溶液
（２）・・・加工槽内
（３）・・・フォトレジスト
（４）・・・パターン形成
（５）・・・セラミックス基材
（６）・・・バーナー
第ｆ図The drawings show embodiments of the present invention; Fig. 1 is a cross-sectional view showing the state of use, Fig. 2 is a cross-sectional view of a patterned ceramic substrate, and Fig. 3 is a perspective view of an etched ceramic product. be. fl+... Phosphoric acid aqueous solution (2)... Inside the processing tank (3)... Photoresist (4)... Pattern formation (5)... Ceramic base material (6)... Burner No. f figure
Claims (3)
グ剤をレジストとしてパターン形成し、該パターンの形
状に従ってエッチングしたことを特徴とするセラミック
スのエッチング成形品。(1) A ceramic etched molded product characterized in that a photosensitive heat-resistant coating agent is patterned as a resist on the surface of a ceramic base material, and etched according to the shape of the pattern.
ミックス基材の表面にパターン形成した後、表面にパタ
ーン形成されたセラミックス基材を加工槽内のりん酸水
溶液中に配置せしめ、上記りん酸水溶液を約１７０〜３
６０℃の範囲内の液温でエッチングしたことを特徴とす
るセラミックスのエッチング成形品の製造方法(2) After forming a pattern on the surface of a ceramic substrate using a photosensitive heat-resistant coating agent as a resist, the ceramic substrate with the pattern formed on the surface is placed in a phosphoric acid aqueous solution in a processing tank, and the phosphoric acid aqueous solution is poured into 170-3
A method for producing an etched ceramic molded product characterized by etching at a liquid temperature within the range of 60°C.
許請求の範囲第２項記載のセラミックスのエッチング成
形品の製造方法(3) The method for producing an etched ceramic article according to claim 2, wherein the phosphoric acid aqueous solution has a concentration of about 60 to 85%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4466686A JPS63190789A (en) | 1986-02-28 | 1986-02-28 | Ceramic etched formed products and manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4466686A JPS63190789A (en) | 1986-02-28 | 1986-02-28 | Ceramic etched formed products and manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63190789A true JPS63190789A (en) | 1988-08-08 |
Family
ID=12697770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4466686A Pending JPS63190789A (en) | 1986-02-28 | 1986-02-28 | Ceramic etched formed products and manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63190789A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4110745A1 (en) * | 1990-04-04 | 1991-10-10 | Mitsubishi Electric Corp | METHOD FOR PROCESSING A CERAMIC MATERIAL |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49130844A (en) * | 1973-04-12 | 1974-12-14 | ||
| JPS5514078A (en) * | 1978-04-19 | 1980-01-31 | Braun Ag | Household electric mixing grinding instrument |
| JPS5722184A (en) * | 1980-07-11 | 1982-02-05 | Dainippon Printing Co Ltd | Ceramic precise working method |
-
1986
- 1986-02-28 JP JP4466686A patent/JPS63190789A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49130844A (en) * | 1973-04-12 | 1974-12-14 | ||
| JPS5514078A (en) * | 1978-04-19 | 1980-01-31 | Braun Ag | Household electric mixing grinding instrument |
| JPS5722184A (en) * | 1980-07-11 | 1982-02-05 | Dainippon Printing Co Ltd | Ceramic precise working method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4110745A1 (en) * | 1990-04-04 | 1991-10-10 | Mitsubishi Electric Corp | METHOD FOR PROCESSING A CERAMIC MATERIAL |
| US5178725A (en) * | 1990-04-04 | 1993-01-12 | Mitsubishi Denki Kabushiki Kaisha | Method for working ceramic material |
| DE4110745C2 (en) * | 1990-04-04 | 1997-01-16 | Mitsubishi Electric Corp | Process for the removal of material from base material which is difficult to process and essentially consists of ceramic material |
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