JPS63189836A - Optical shutter array - Google Patents

Optical shutter array

Info

Publication number
JPS63189836A
JPS63189836A JP2292187A JP2292187A JPS63189836A JP S63189836 A JPS63189836 A JP S63189836A JP 2292187 A JP2292187 A JP 2292187A JP 2292187 A JP2292187 A JP 2292187A JP S63189836 A JPS63189836 A JP S63189836A
Authority
JP
Japan
Prior art keywords
shutter
array
windows
elements
shutter array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2292187A
Other languages
Japanese (ja)
Inventor
Ken Matsubara
兼 松原
Itaru Saito
格 齊藤
Koichi Aragaki
新垣 康一
Hirohisa Kitano
博久 北野
Tomohiko Masuda
朋彦 益田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Minolta Co Ltd
Original Assignee
Minolta Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minolta Co Ltd filed Critical Minolta Co Ltd
Priority to JP2292187A priority Critical patent/JPS63189836A/en
Priority to US07/120,949 priority patent/US4887104A/en
Priority to DE3745010A priority patent/DE3745010C2/en
Priority to DE19873739219 priority patent/DE3739219B4/en
Publication of JPS63189836A publication Critical patent/JPS63189836A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To interrupt leaked light and to simplify the production of an optical shutter array by constituting the shutter array of a transparent porcelain substrate on which two strings of shutter elements having windows corresponding to approximately two picture elements are formed and masks formed on the substrate to interrupt one picture element of each window. CONSTITUTION:The shutter array 16 in a shutter array body 11 produced by using the transparent porcelain substrate 10 having an electrooptical effect consists of shutter elements 17 and a shutter array 18 symmetrical with the array 16 through a groove 12 consists of shutter elements 19. Each of windows 17w, 19w of the elements 17, 19 is a rectangle longitudinal in the array direction and has an area corresponding to two picture elements and more. Masks 30, 31 for interrupting the light formed on these windows 17w and 19w are zigzag arrayed on all the windows 17w, 19w. Each of masks 30, 31 has an area corresponding to approximately one picture element to expose only picture element windows 27w-29w respectively corresponding to almost a half of the area of each window 17w or 19w. Consequently, leaked light due to the influence of crosstalk can be removed. In addition, the production of the shutter array can be simplified.

Description

【発明の詳細な説明】 番2上Δ五里塵訪 この発明は、電気光学効果を有する材料を用いた光シヤ
ツタアレイに関する。
DETAILED DESCRIPTION OF THE INVENTION This invention relates to an optical shutter array using a material having an electro-optic effect.

良木α遣艦 電気光学効果を有する材料、特にカ一定数の大きいPL
ZTの透明磁器基板に、共通電極と個別電極を形成した
光シヤツタアレイは、例えば特開昭52−8842号公
報等で知られている。
Yoshiki α Materials with electro-optic effect, especially PL with large force constant
An optical shutter array in which a common electrode and individual electrodes are formed on a ZT transparent porcelain substrate is known, for example, from Japanese Patent Laid-Open No. 52-8842.

辞誓l十 其撥め以ムた書面は常膓か嵌青十スLのであ
ったが、シャッタ駆動の低電圧化を図るためにシャッタ
エレメントを立体状に形成し対向電極に平行電界を印加
し実効的な電界強度を大きくしようとする提案がある(
特開昭60−170828号公報)。
The original document that has been used for this purpose was written in the usual way, but in order to reduce the voltage for driving the shutter, the shutter element was formed into a three-dimensional shape and a parallel electric field was applied to the opposing electrode. There is a proposal to increase the effective electric field strength (
(Japanese Unexamined Patent Publication No. 170828/1982).

これらの背景を踏まえて我々は、より一層の低電圧化を
実現できるとともに製作が容易な光シヤツタ7レイを提
案した。第1図にこれを示す。
Based on these backgrounds, we proposed an optical shutter 7-ray that can realize even lower voltage and is easy to manufacture. This is shown in Figure 1.

PLZTの透明磁器基板(1)に精密切削加工技術によ
り深い溝(2)?(3)、(4)を設け、共通電極(5
)と個別fIt極(6a)t(ab)を同時にスパッタ
リングにより形成し、一定ピツチでm(7)を切り込ん
でシャッタエレメント(8e)、シャッタエレメント(
9e)でなる2列のシャッタアレイ(8)、(9)とし
たものである。光プリンタに適用する場合、これを偏光
子と検光子の間に設置し、2列のシャッタアレイ(8)
、(9)を時分割で駆動して(駆動電圧は50V以下で
もよい)、1本の画素ライン(8〜12画素/−m)を
形成する。
Deep grooves (2) created using precision cutting technology on PLZT's transparent porcelain substrate (1)? (3) and (4) are provided, and a common electrode (5
) and individual fIt poles (6a) and t(ab) are simultaneously formed by sputtering, and m (7) is cut at a constant pitch to form the shutter element (8e) and the shutter element (
9e) and two rows of shutter arrays (8) and (9). When applied to an optical printer, it is installed between a polarizer and an analyzer, and a two-row shutter array (8)
, (9) in a time division manner (the driving voltage may be 50 V or less) to form one pixel line (8 to 12 pixels/-m).

明が 7 しようとする 亀荒 ところが、2列のシャッタアレイ(8)、(9)に椙、
1て、千鳥状に1.全く使用していないシャッタエレメ
ントがあり、クロストークその他によってこの不使用の
シャッタエレメント(以下、遊び窓という)からの漏れ
光が問題となっている。
Akira tries to do 7. However, Sugi is in the 2 rows of shutter arrays (8) and (9).
1, staggered 1. There are shutter elements that are not used at all, and light leakage from these unused shutter elements (hereinafter referred to as play windows) is a problem due to crosstalk and other factors.

この発明は、遊び窓の漏れ光の問題を解決し、合わせて
シャッタアレイの製作を簡略化することを目的とする。
The purpose of this invention is to solve the problem of light leakage from play windows and also to simplify the production of a shutter array.

、ヴを  するための この発明に係る光シヤツタアレイは、ほぼ2画素分の窓
をもつシャッタエレメントの列を2列形成した電気光学
効果を有する透明磁器基板と、この基板に形成され、シ
ャッタエレメントの窓を1画素分遮光し2列のシャッタ
エレメントの窓に対しては千鳥状の配列となるマスクと
からなることを基本的な特徴としている。
The optical shutter array according to the present invention for the purpose of The basic feature is that the window is shielded from light by one pixel and consists of a mask arranged in a staggered manner for the window of two rows of shutter elements.

シャッタエレメントはすべて駆動され、RV窓がないの
でこれによる漏れ光がない。シャッタエレメントにはほ
ぼ2画素分の光が通り、窓のマスクによりそのうちのほ
ぼ1画素分は完全に遮光される。他の1画素分の光は、
窓を通過し、この通過窓は千鳥配列のマスクにより千鳥
状になっているから、2列のシャッタエレメントの時分
割駆動によって1本の画素ラインを形成することができ
る。
All shutter elements are driven and there is no RV window, so there is no light leakage. Approximately two pixels worth of light passes through the shutter element, and approximately one pixel of the light is completely blocked by the window mask. The light for one other pixel is
The light passes through a window, and since the passing window is arranged in a staggered manner due to a staggered mask, one pixel line can be formed by time-division driving of two rows of shutter elements.

X凰餞 第2図に実施例を示す。X 凰鞞 An example is shown in FIG.

(11)は、PLZTの透明磁器基板(10)を精密切
削加工して作成したシャッタアレイ本体である。
(11) is a shutter array body made by precision cutting a PLZT transparent porcelain substrate (10).

溝(12)とこの溝(12)より浅い溝(13)、(1
4)を設け、電極となる金属膜を着膜し、溝(12)と
溝(13)、 (14)との中間の深さをもつ溝(15
)を切り込むことにより物理的、電気的にシャッタエレ
メントに分離したものである。
A groove (12) and a groove (13) shallower than this groove (12), (1
A groove (15) having a depth intermediate between the groove (12) and the grooves (13) and (14) is formed by depositing a metal film to serve as an electrode.
) is physically and electrically separated into shutter elements.

シャッタアレイ(16)はシャッタエレメント(17)
からなり、溝(12)を挾んで対称なシャッタアレイ(
18)はシャッタエレメント(19)からなる。シャッ
タエレメント(17)、(19)の窓(17w)=(1
9w)は配列方向に長い長方形をなし、2画素分以上の
面積をもつ。
The shutter array (16) is a shutter element (17)
A symmetrical shutter array (
18) consists of a shutter element (19). Window (17w) of shutter element (17), (19) = (1
9w) forms a long rectangle in the arrangement direction and has an area of two pixels or more.

m(12)に着膜された金属膜は共通電極(20)を形
成し、シャッタニレメン) (17)の個別電極(21
)は基板(10)の−刃端縁まで連続して電極リード部
(211)を形する。また、シャッタニレメン) (1
9)の個別電極(22)も基板(10)の他方端縁まで
連続して電極リード部(221)を形成する。電極リー
ド部(211)、 (221)の端部にはリード線をポ
ンディングし、駆動回路と接続する。共通電極(20)
をアースし、個別電極(21)、(22)に所定電圧を
印加すると、シャッタエレメント(1)゛)、(19)
は電気光学効果を示し、窓(17w)、(19w)を通
る光を偏光させる。
The metal film deposited on m (12) forms a common electrode (20) and separates the individual electrodes (21) of (17)
) forms an electrode lead portion (211) that continues up to the negative edge of the substrate (10). Also, Shattaniremen) (1
The individual electrode (22) of 9) also forms an electrode lead portion (221) continuously to the other edge of the substrate (10). Lead wires are bonded to the ends of the electrode lead parts (211) and (221) and connected to the drive circuit. Common electrode (20)
When grounded and a predetermined voltage is applied to the individual electrodes (21) and (22), the shutter elements (1) ゛) and (19)
exhibits an electro-optic effect and polarizes the light passing through the windows (17w) and (19w).

(30)、(31)は、シャッタエレメント(17)、
 (19)の窓(17w)、(19m)上に形成した光
を遮断するマスクである。マスク(30)、(31)は
シャッタ7レイ(16)。
(30) and (31) are shutter elements (17);
This is a mask that blocks light formed on the windows (17w) and (19m) of (19). Masks (30) and (31) are shutter 7 rays (16).

(18)のすべての窓(17w)*(19m)に対し、
千鳥状の配列となっている。マスク(30)、(31)
のいずれも、はば1画素分の面積をもち、その一部で窓
(17w)。
For all windows (17w) * (19m) in (18),
They are arranged in a staggered pattern. Mask (30), (31)
Both have an area of one pixel, and part of it is a window (17w).

(19m)の周辺部を囲うようにして窓(17w)−(
19w)の面積のばば半分に相当する画素窓(27w)
、(29m)のみを露呈させている0画素窓(27w)
、 (29w)はいずれも正方形の1画素に対応し、千
鳥状に配列する。
Window (17w) - (
Pixel window (27w) equivalent to half the area of 19w)
, 0 pixel window (27w) exposing only (29m)
, (29w) each correspond to one square pixel and are arranged in a staggered manner.

マスク(30)、(31)はこの画素窓(27w)、 
(29w)を通る光以外の光を完全に遮断する。シャッ
タアレイ(16)とシャッタアレイ(18)を時分割で
駆動し、時間差を感光体の移動と整合させると、1回の
駆動で感光体には画素窓(27w)、(29m)の投影
像からなる1本の画素ラインが形成される。
Masks (30) and (31) are this pixel window (27w),
Completely blocks light other than light passing through (29w). When the shutter array (16) and the shutter array (18) are driven in a time division manner and the time difference is matched with the movement of the photoreceptor, the projected images of the pixel windows (27w) and (29m) are displayed on the photoreceptor with one drive. One pixel line is formed.

上記のマスク(30)、(31)は、シャッタアレイ本
体(11)の作製と関連付けて形成されるほうが好まし
く、第3図にその作製・形成方法を工程順に示す。
It is preferable that the masks (30) and (31) described above be formed in conjunction with the fabrication of the shutter array main body (11), and the fabrication method thereof is shown in the order of steps in FIG.

まず、PLZT透明磁器基板(10)に例えば感光性黒
色二マルシ1ンを塗布してマスク材料薄膜(40)を形
成する(第3図(a))、次に、7オトリソグラフイー
によってマスクパターン(41)を形成する(同図(b
))、次いでこのマスクパターン(41)及び基板(1
0)上に帯状にホトレジス) (42)を塗布し、熱硬
化させる。(同図(c))。
First, a thin film of mask material (40) is formed by coating a PLZT transparent porcelain substrate (10) with, for example, photosensitive black bimarine (Fig. 3(a)).Next, a mask pattern is formed by otolithography. (41) ((b)
)), then this mask pattern (41) and the substrate (1
0) Apply a strip of photoresist (42) on top and heat cure. (Figure (c)).

精密切削加工に移り、第3図(d)に示すように、例え
ばグイシングツ−を用いて、溝(12)、(13)、(
14)をカッティングする。次に、電極用の金属、例え
ばAi’、Crなどを真空成膜により全面に着膜して電
極薄膜(43)を形成しく同図(e))、電極及びエレ
メントを分離するための溝(15)を一定ピツチで多数
カッティングし、最後にレジスト剥離液を用いて上に電
極薄l1l(43)の来ったレジス) (42)を剥離
し、完成させる(同図(f))。
Moving on to precision cutting, grooves (12), (13), (
14) Cut. Next, a metal for electrodes, such as Ai', Cr, etc., is deposited on the entire surface by vacuum deposition to form an electrode thin film (43) (see Figure (e)), and a groove (43) for separating the electrode and element ( 15) is cut in large numbers at a certain pitch, and finally, the resist (42) with the thin electrode l1l (43) on top is removed using a resist stripper to complete the process ((f) in the same figure).

第3図(f)に図解される溝(15)のカッティングに
関し、これを先の例に比べると工数の点できわめて有利
である。即ち、第2図に示したシャッタアレイ本体(1
1)から明らかなように、シャッタエレメント(17)
、 (19)の窓(17m)、(19m)は2画素分以
上の面積であるから、第1図のものに比較すると、エレ
メント分離用の溝(15)のカッティング回数は半分で
よい。通常、この溝(15)は1000〜2000本作
られるので相当に大きな工数がかかるが、それが牛滅し
製作工程が簡略化される。また、電極リード部(211
)、 (221)も2g素分以上の幅をもつこととなり
、ボンディングの困難さを回避できる。
Regarding the cutting of the groove (15) illustrated in FIG. 3(f), this is extremely advantageous in terms of the number of man-hours compared to the previous example. That is, the shutter array main body (1
As is clear from 1), the shutter element (17)
Since the windows (17m) and (19m) in (19) have an area equal to or more than two pixels, the number of times the element separation groove (15) is cut can be reduced to half compared to that of FIG. Normally, 1,000 to 2,000 grooves (15) are made, which requires a considerable amount of man-hours, but this eliminates this and simplifies the manufacturing process. In addition, the electrode lead part (211
) and (221) also have a width of 2g element or more, which avoids the difficulty of bonding.

兄曹Vソ九乳 以上の説明で明らかなように、この発明によれば、遊び
窓をもたない構成であるのでクロストークの影響による
漏れ光をなくすことができ、また、シャッタエレメント
に分離するための溝カッティングの回数が牛滅しシャッ
タアレイの製作を簡略化できると同時に電極の接続部を
広幅にできることから駆動回路とのボンディングが容易
になる。
As is clear from the above explanation, according to the present invention, since the structure does not have a play window, it is possible to eliminate light leakage due to the influence of crosstalk. This simplifies the production of the shutter array by reducing the number of times the grooves must be cut to achieve this, and at the same time, the electrode connection portion can be made wider, which facilitates bonding with the drive circuit.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は先に提案の光シヤツタ7レイの説明図、第2図
は本発明の実施例を示す図、第3図は実施例の一作製列
を断面模式的に°示した工程図である。 11・・・シャッタアレイを形成したPLZT透明磁器
基板、16.18・・・シャッタアレイ、17.19・
・・シャッタエレメント、17m、19m・・・ほぼ2
画素分の面積の窓、27w、29w・・・画素窓、30
゜31・・・千鳥配列のマスク。
Fig. 1 is an explanatory diagram of the previously proposed optical shutter 7-lay, Fig. 2 is a diagram showing an embodiment of the present invention, and Fig. 3 is a process diagram schematically showing a cross-sectional view of one manufacturing row of the embodiment. be. 11... PLZT transparent porcelain substrate on which a shutter array was formed, 16.18... Shutter array, 17.19.
...Shutter element, 17m, 19m...almost 2
Window with area for pixel, 27w, 29w...pixel window, 30
゜31...Staggered mask.

Claims (1)

【特許請求の範囲】[Claims] (1)電気光学効果を有し、ほぼ2画素分の窓をもつシ
ャッタエレメントの列を2列形成した透明磁器基板に、
前記2列のシャッタエレメントの窓に対しこの窓の1画
素分を遮光するマスクを千鳥状に形成したことを特徴と
する光シャッタアレイ。
(1) A transparent porcelain substrate on which two rows of shutter elements with an electro-optical effect and a window for approximately two pixels are formed.
An optical shutter array characterized in that a mask is formed in a staggered manner to block one pixel of light from the windows of the two rows of shutter elements.
JP2292187A 1986-11-19 1987-02-02 Optical shutter array Pending JPS63189836A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2292187A JPS63189836A (en) 1987-02-02 1987-02-02 Optical shutter array
US07/120,949 US4887104A (en) 1986-11-19 1987-11-16 Electrooptical light shutter device and printer apparatus using same
DE3745010A DE3745010C2 (en) 1986-11-19 1987-11-19 Electro=optical light shutter e.g. for printer
DE19873739219 DE3739219B4 (en) 1986-11-19 1987-11-19 Electro-optical light shutter device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2292187A JPS63189836A (en) 1987-02-02 1987-02-02 Optical shutter array

Publications (1)

Publication Number Publication Date
JPS63189836A true JPS63189836A (en) 1988-08-05

Family

ID=12096105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2292187A Pending JPS63189836A (en) 1986-11-19 1987-02-02 Optical shutter array

Country Status (1)

Country Link
JP (1) JPS63189836A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02235017A (en) * 1989-03-09 1990-09-18 Sankyo Seiki Mfg Co Ltd Optical shutter array and its manufacture
WO1990010887A1 (en) * 1989-03-09 1990-09-20 Kabushiki Kaisha Sankyo Seiki Seisakusho Light shutter array and method of producing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02235017A (en) * 1989-03-09 1990-09-18 Sankyo Seiki Mfg Co Ltd Optical shutter array and its manufacture
WO1990010887A1 (en) * 1989-03-09 1990-09-20 Kabushiki Kaisha Sankyo Seiki Seisakusho Light shutter array and method of producing the same
JPH0529890B2 (en) * 1989-03-09 1993-05-06 Sankyo Seiki Seisakusho Kk

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