JPS63184339A - Oxidizing device - Google Patents
Oxidizing deviceInfo
- Publication number
- JPS63184339A JPS63184339A JP1639587A JP1639587A JPS63184339A JP S63184339 A JPS63184339 A JP S63184339A JP 1639587 A JP1639587 A JP 1639587A JP 1639587 A JP1639587 A JP 1639587A JP S63184339 A JPS63184339 A JP S63184339A
- Authority
- JP
- Japan
- Prior art keywords
- steam
- chamber
- combustion
- water vapor
- oxidation treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000001590 oxidative effect Effects 0.000 title claims description 5
- 238000002485 combustion reaction Methods 0.000 claims abstract description 36
- 230000003647 oxidation Effects 0.000 claims abstract description 31
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 31
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- 239000001257 hydrogen Substances 0.000 claims abstract description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 37
- 239000000126 substance Substances 0.000 claims description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 23
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 23
- 239000000919 ceramic Substances 0.000 abstract description 6
- 239000007800 oxidant agent Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 239000006096 absorbing agent Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、半導体ウェハ等の酸化処理に利用される酸化
装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to an oxidation apparatus used for oxidizing semiconductor wafers and the like.
（従来の技術）
一般に酸化装置は、半導体ウェハ等の酸化処理に従来か
ら広く使用されている。(Prior Art) Generally, oxidation apparatuses have been widely used for oxidation treatment of semiconductor wafers and the like.
第３図は、このような従来の酸化装置のうち、最も多用
されている横型酸化炉を示すもので、石英等からほぼ中
空円筒状に形成されたチャンバ（プロセスチューブ）１
の周囲には、ヒータ２が配置されており、このチャンバ
１の一端には、水素ガス導入管３および酸素ガス導入管
４が配置されている。また、チャンバ１内の水素ガス導
入管３先端と、被処理物が配置される部位との間にはバ
ッファ５が配置されている。Figure 3 shows a horizontal oxidation furnace, which is the most commonly used type of conventional oxidation equipment.
A heater 2 is arranged around the chamber 1, and a hydrogen gas introduction pipe 3 and an oxygen gas introduction pipe 4 are arranged at one end of the chamber 1. Further, a buffer 5 is arranged between the tip of the hydrogen gas introduction pipe 3 in the chamber 1 and the region where the object to be processed is arranged.
上記構成の酸化装置では、水素ガス導入管３および酸素
ガス導入管４がらチャンバ１内に水素ガスおよび酸素ガ
スが導入され、水素ガスと酸素ガスの反応によって生成
された水（水蒸気）と酸素ガスによって、チャンバ１内
に配置された図示しない半導体ウェハ等が酸化される。In the oxidation apparatus having the above configuration, hydrogen gas and oxygen gas are introduced into the chamber 1 through the hydrogen gas introduction pipe 3 and the oxygen gas introduction pipe 4, and water (steam) and oxygen gas are generated by the reaction between the hydrogen gas and the oxygen gas. As a result, a semiconductor wafer (not shown) placed in the chamber 1 is oxidized.
なお、バッファ５は、水素ガスの燃焼反応による熱がち
半導体ウェハ等の被酸化物を保護するために配置されて
いる。Note that the buffer 5 is arranged to protect objects to be oxidized, such as semiconductor wafers, which tend to heat up due to the combustion reaction of hydrogen gas.
しかしながら、上述の酸化装置では、チャンバ１内の温
度制御性か悪いなめ、最近では、第４図に示すように、
チャンバ１の一端に、ボールジヨイント６等を介してチ
ャンバ１外に設けた燃焼容器７を接続した外部燃焼方式
の酸化装置が開発されている。However, the above-mentioned oxidation apparatus suffers from poor temperature control in the chamber 1, and recently, as shown in FIG.
An external combustion type oxidation apparatus has been developed in which a combustion vessel 7 provided outside the chamber 1 is connected to one end of the chamber 1 via a ball joint 6 or the like.
この外部燃焼方式の酸化装置では、燃焼容器７内に水素
ガス導入管８および酸素ガス導入管９から水素ガスと酸
素ガスを導入し、この燃焼容器７内で水素を燃焼させ、
発生した水蒸気を水滴化しないようにしてチャンバ１内
へ導入する。なお、水素ガスは、ヒータ１０によってあ
らかじめ加熱することが多い。In this external combustion type oxidizer, hydrogen gas and oxygen gas are introduced into the combustion vessel 7 from the hydrogen gas introduction pipe 8 and the oxygen gas introduction pipe 9, and the hydrogen is combusted within the combustion vessel 7.
The generated water vapor is introduced into the chamber 1 without turning into water droplets. Note that the hydrogen gas is often heated in advance by the heater 10.
上述の外部燃焼方式の酸化装置では、前述のチャンバ１
内で水素を燃焼させる方式の酸化装置に較べて、チャン
バ１内の温度制御性を大幅に改善することができる。In the above-mentioned external combustion type oxidation apparatus, the above-mentioned chamber 1
Compared to an oxidizer that burns hydrogen within the chamber 1, temperature controllability within the chamber 1 can be significantly improved.
（発明が解決しようとする問題点）
しかしながら、上記説明の従来の酸化装置では、水蒸気
の発生量を減少させるため、燃焼容器内への水素ガスの
導入量を減少させると、燃焼か不安定となり、水蒸気の
発生量が不安定となる。(Problem to be Solved by the Invention) However, in the conventional oxidizer described above, when the amount of hydrogen gas introduced into the combustion vessel is reduced in order to reduce the amount of water vapor generated, combustion becomes unstable. , the amount of water vapor generated becomes unstable.
したがって、チャンバ内へ導入される水蒸気量も不安定
となり、特に低濃度の水蒸気により酸化処理を行う場合
に、水蒸気濃度の精度が低下し、所望の酸化処理を行う
ことが困難になるという問題がある。Therefore, the amount of water vapor introduced into the chamber becomes unstable, and especially when performing oxidation treatment with water vapor at a low concentration, the accuracy of the water vapor concentration decreases, making it difficult to perform the desired oxidation treatment. be.
本発明は、かかる従来の事情に対処してなされたもので
、低濃度の水蒸気により酸化処理を行う場合でも、水蒸
気濃度の精度を高く保つことができ、所望の酸化処理を
行うことのできる酸化装置を提供しようとするものであ
る。The present invention has been made in response to such conventional circumstances, and even when performing oxidation treatment with water vapor at a low concentration, the accuracy of the water vapor concentration can be maintained high, and the oxidation treatment can perform the desired oxidation treatment. The aim is to provide equipment.
［発明の構成］
（問題点を解決するための手段）
すなわち本発明は、被酸化物を収容するチャンバと、水
素と酸素とを反応させ水蒸気を生成させる燃焼容器と、
この燃焼容器から前記チャンバへ前記水蒸気を導入する
導入路とを備えた酸化装置において、前記燃焼容器内で
生成された前記水蒸気を前記チャンバ以外の部位へ導出
する分流手段を設け、前記水蒸気の一部のみを前記チャ
ンバへ導入可能に構成したことを特徴とする。[Structure of the Invention] (Means for Solving the Problems) That is, the present invention includes a chamber that accommodates a substance to be oxidized, a combustion vessel that reacts hydrogen and oxygen to generate water vapor,
In this oxidizing device, the oxidizer is equipped with an introduction path for introducing the water vapor from the combustion vessel to the chamber, and a dividing means is provided for guiding the water vapor generated in the combustion vessel to a part other than the chamber, The present invention is characterized in that only the portion can be introduced into the chamber.
（作 用）
本発明の酸化装置では、燃焼容器内で生成された水蒸気
を被酸化物を収容するチャンバ以外の部位へ導出する分
流手段が設けられており、燃焼容器内で生成された水蒸
気の一部のみをチャンバへ導入可能に構成されている。(Function) The oxidizer of the present invention is provided with a diverting means for directing the water vapor generated in the combustion vessel to a part other than the chamber containing the oxidized material, so that the water vapor generated in the combustion vessel can be diverted. It is configured so that only a portion can be introduced into the chamber.
したがって、低濃度の水蒸気により酸化処理を行う場合
でも、燃焼容器内での燃焼を安定に保ちながら、チャン
バ内への水蒸気の導入量のみを減少させることができ、
水蒸気濃度の精度を高く保つことができる。Therefore, even when performing oxidation treatment with water vapor at a low concentration, it is possible to maintain stable combustion within the combustion vessel while reducing only the amount of water vapor introduced into the chamber.
High accuracy of water vapor concentration can be maintained.
（実施例）
以下本発明の酸化装置を第１図および第２図を参照して
実施例について説明する。(Example) Hereinafter, an example of the oxidation apparatus of the present invention will be described with reference to FIGS. 1 and 2.
この実施例の酸化装置では、石英等がらほぼ中空円筒状
に形成されたチャンバ（プロセスチューブ）１１の一端
には、燃焼容器１２が、水蒸気流路１３を介してボール
ジヨイント１４により接続されている。In the oxidation apparatus of this embodiment, a combustion vessel 12 is connected to one end of a chamber (process tube) 11 formed of quartz or the like in a substantially hollow cylindrical shape via a steam flow path 13 by a ball joint 14. There is.
燃焼容器１２には、水素ガス導入管１５および酸素ガス
導入管１６が接続されており、水素ガス導入管１５には
、セラミックヒータ１７が配置されている。A hydrogen gas introduction pipe 15 and an oxygen gas introduction pipe 16 are connected to the combustion vessel 12, and a ceramic heater 17 is arranged on the hydrogen gas introduction pipe 15.
そして、水蒸気流路１３には、上流側から順に、排気流
路１８、セラミックヒータ１９等の加熱手段、流量コン
トローラ２０が配置されている。In the water vapor flow path 13, an exhaust flow path 18, heating means such as a ceramic heater 19, and a flow rate controller 20 are arranged in order from the upstream side.
上記構成のこの実施例の酸化装置では、水素ガス導入管
１５および酸素ガス導入管１６により、水素ガスおよび
酸素ガスを、燃焼容器１２内へ導入する。なお、このと
き水素ガスは、セラミックヒータ１７によって加熱しな
がら導入する。In the oxidizing apparatus of this embodiment having the above configuration, hydrogen gas and oxygen gas are introduced into the combustion vessel 12 through the hydrogen gas introduction pipe 15 and the oxygen gas introduction pipe 16. Note that at this time, the hydrogen gas is introduced while being heated by the ceramic heater 17.
そして、燃焼容器１２内で水素と酸素を燃焼させ、発生
した水蒸気および未反応の酸素ガスを、水蒸気流路１３
により、セラミックヒータ１９で加熱し、流量コントロ
ーラ２０で流量を制御しながらチャンバ１１内へ導入す
る。Then, hydrogen and oxygen are combusted in the combustion vessel 12, and the generated water vapor and unreacted oxygen gas are transferred to the water vapor flow path 13.
As a result, it is heated by the ceramic heater 19 and introduced into the chamber 11 while controlling the flow rate by the flow controller 20.
このとき、流量コントローラ２０で流量を制御すること
によって余剰となった水蒸気および酸素ガスは、排気流
路１８により装置外へ排出する。At this time, excess water vapor and oxygen gas are discharged from the apparatus through the exhaust flow path 18 by controlling the flow rate with the flow rate controller 20.
したがって、低濃度の水蒸気により酸化処理を行う場合
は、燃焼容器１２内へ燃焼が不安定とならない程度の充
分な水素ガスと酸素ガスとを導入し、安定した燃焼によ
って生成された水蒸気のうち、酸化処理に必要な水蒸気
のみを、流量コントローラ２０によってチャンバ１１内
へ導入し、余剰な水蒸気および酸素ガスは、排気流路１
８によって装置外へ排出することにより、水蒸気濃度を
精度良く制御することができる。Therefore, when performing oxidation treatment with water vapor at a low concentration, sufficient hydrogen gas and oxygen gas are introduced into the combustion vessel 12 to the extent that combustion does not become unstable, and among the water vapor generated by stable combustion, Only the water vapor necessary for oxidation treatment is introduced into the chamber 11 by the flow controller 20, and excess water vapor and oxygen gas are removed from the exhaust flow path 1.
By discharging the water vapor to the outside of the apparatus through step 8, the water vapor concentration can be controlled with high accuracy.
第２図は、他の実施例の酸化装置を示すもので、この酸
化装置では、水蒸気流路１３の排気流路１８分岐部位と
セラミックヒータ１９との間に酸素吸着器２１が介挿さ
れており、流量コントローラ２０下流側に、流量コント
ローラ２２を備えた酸素ガス供給路２３か接続されてい
る。なお、他の部分については、前述の実施例と同一で
あるため、同一部分には、同一符号を付して、重複した
説明は、省略する。FIG. 2 shows an oxidizer according to another embodiment. In this oxidizer, an oxygen absorber 21 is inserted between a branch part of the exhaust flow path 18 of the water vapor flow path 13 and a ceramic heater 19. An oxygen gas supply path 23 including a flow rate controller 22 is also connected to the downstream side of the flow rate controller 20 . Note that other parts are the same as those in the previous embodiment, so the same parts are given the same reference numerals and redundant explanations will be omitted.
上記構成のこの実施例の酸化装置では、燃焼容器１２内
からチャンバ１１へ導入されるガスのうち、酸素ガスを
酸素吸着器２１によって除去し、燃焼容器１２内からチ
ャンバ１１へ導入されるガスは、水蒸気のみとする。そ
して、流量コントローラ２２によって流量を制御しなが
ら酸素ガス供給路２３により酸素ガスを水蒸気流路１３
内へ供給し、水蒸気と混合した後、チャンバ１１内へ導
入する。In the oxidizer of this embodiment having the above configuration, oxygen gas is removed from the gas introduced into the chamber 11 from the combustion vessel 12 by the oxygen absorber 21, and the gas introduced from the combustion vessel 12 into the chamber 11 is removed by the oxygen absorber 21. , water vapor only. Then, while the flow rate is controlled by the flow rate controller 22, the oxygen gas is supplied to the water vapor flow path 13 by the oxygen gas supply path 23.
After being mixed with water vapor, it is introduced into the chamber 11.
したがって、前述の実施例と同様な効果を得ることがで
き、さらに、水蒸気と酸素ガスとの割合を精度良く制御
することができる。Therefore, it is possible to obtain the same effects as in the above-mentioned embodiments, and furthermore, it is possible to control the ratio of water vapor and oxygen gas with high precision.
［発明の効果］
上述のように′、本発明の酸化装置では、低濃度の水蒸
気により酸化処理を行う場合でも、水蒸気濃度の精度を
高く保つことができ、所望の酸化処理を行うことができ
る。[Effects of the Invention] As described above, in the oxidation apparatus of the present invention, even when performing oxidation treatment with low concentration steam, the accuracy of the steam concentration can be maintained high, and the desired oxidation treatment can be performed. .
第１図は本発明の一実施例の酸化装置の要部を示す構成
図、第２図は他の実施例の酸化装置の要部を示す構成図
、第３図は従来の横型酸化炉を示す構成図、第４図は従
来の外部燃焼方式の酸化装置の要部を示す構成図である
。
１１・・・・・・チャンバ、１２・・・・・・燃焼容器
、１３・・・・・・水蒸気流路、１５・・・・・・水素
ガス導入管、１６・・・・・・酸素ガス導入管、１８・
・・・・・排気流路、２０・・・・・・流量コントロー
ラ。
出願人 東京エレクトロン株式会社
代理人 弁理士 須 山 佐 −
一 ９ −
第１図
１８開口ＵＧ３−１８４３３９ （４）第３図Fig. 1 is a block diagram showing the main parts of an oxidation apparatus according to one embodiment of the present invention, Fig. 2 is a block diagram showing the main parts of an oxidation apparatus according to another embodiment, and Fig. 3 shows a conventional horizontal oxidation furnace. FIG. 4 is a block diagram showing the main parts of a conventional external combustion type oxidizer. 11...Chamber, 12...Combustion container, 13...Steam flow path, 15...Hydrogen gas introduction pipe, 16...Oxygen Gas introduction pipe, 18・
...Exhaust flow path, 20...Flow rate controller. Applicant Tokyo Electron Co., Ltd. Agent Patent Attorney Sasa Suyama - 9 - Figure 1 18 opening UG3-184339 (4) Figure 3
Claims (1)
反応させ水蒸気を生成させる燃焼容器と、この燃焼容器
から前記チャンバへ前記水蒸気を導入する導入路とを備
えた酸化装置において、前記燃焼容器内で生成された前
記水蒸気を前記チャンバ以外の部位へ導出する分流手段
を設け、前記水蒸気の一部のみを前記チャンバへ導入可
能に構成したことを特徴とする酸化装置。(1) An oxidizing device comprising a chamber for accommodating a substance to be oxidized, a combustion vessel for reacting hydrogen and oxygen to generate water vapor, and an introduction path for introducing the water vapor from the combustion vessel to the chamber, An oxidation apparatus characterized in that a dividing means is provided for guiding the water vapor generated in the combustion vessel to a part other than the chamber, and the oxidation apparatus is configured such that only a part of the water vapor can be introduced into the chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1639587A JPH0652731B2 (en) | 1987-01-27 | 1987-01-27 | Oxidizer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1639587A JPH0652731B2 (en) | 1987-01-27 | 1987-01-27 | Oxidizer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63184339A true JPS63184339A (en) | 1988-07-29 |
| JPH0652731B2 JPH0652731B2 (en) | 1994-07-06 |
Family
ID=11915055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1639587A Expired - Fee Related JPH0652731B2 (en) | 1987-01-27 | 1987-01-27 | Oxidizer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0652731B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02130925A (en) * | 1988-11-11 | 1990-05-18 | Tel Sagami Ltd | Vertical type pressure oxidation equipment |
| WO2009028619A1 (en) * | 2007-08-30 | 2009-03-05 | Tokyo Electron Limited | Treating-gas supply system and treating apparatus |
| JP2009076881A (en) * | 2007-08-30 | 2009-04-09 | Tokyo Electron Ltd | Treatment gas supply system and processing device |
-
1987
- 1987-01-27 JP JP1639587A patent/JPH0652731B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02130925A (en) * | 1988-11-11 | 1990-05-18 | Tel Sagami Ltd | Vertical type pressure oxidation equipment |
| WO2009028619A1 (en) * | 2007-08-30 | 2009-03-05 | Tokyo Electron Limited | Treating-gas supply system and treating apparatus |
| JP2009076881A (en) * | 2007-08-30 | 2009-04-09 | Tokyo Electron Ltd | Treatment gas supply system and processing device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0652731B2 (en) | 1994-07-06 |
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|---|---|---|---|
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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