JPH1187329A - Steam supply system and oxidation processing equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent saturation generated in adjusting the concentration of steam in a mixture with a carrier gas and supplying the mixture to a processing furnace, and facilitate adjustment of the concentration of steam and control of an oxide film, by providing, in a carrier gas supply tube, heating means for heating the carrier gas to substantially the same temperature as the combustion temperature. SOLUTION: A carrier gas supply tube 6 for mixing a carrier gas with steam immediately after generation and thus adjusting the concentration of steam is merged and connected with a steam supply tube 5. The upstream side of the carrier gas supply tube 6 is connected to a gas source of the carrier gas through a flow control mechanism or the like. Then, in the carrier gas supply tube 6, a heater 7 is provided as heating means for heating the carrier gas to substantially the same temperature as the combustion temperature in a combustion device 2. Thus, since the carrier gas is heated in advance to substantially the same temperature as the combustion temperature and then mixed with steam, saturation generated in adjusting the concentration of steam in the mixture with the carrier gas and supplying the mixture to a processing furnace can be prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a steam supply system and an oxidation treatment apparatus.

[0002]

2. Description of the Related Art In the manufacture of semiconductor devices, there is an oxidation treatment step of forming an oxide film on the surface of a substrate to be treated, for example, a semiconductor wafer.
2. Description of the Related Art There is known a method of oxidizing (also called wet oxidation) a semiconductor wafer in a processing furnace by bringing the semiconductor wafer into contact with water vapor at a high temperature. In order to perform such an oxidation treatment, for example, as described in JP-B-63-60528, a combustion apparatus that generates (generates) steam by burning (reacting) hydrogen gas and oxygen gas. Is provided independently outside the processing furnace, and steam generated by the combustion device is supplied to the processing furnace.

When supplying steam to a processing furnace, it is preferable to adjust the concentration of steam using a carrier gas composed of an inert gas such as nitrogen (N ₂ ) gas in order to perform a desired oxidation treatment. In this case, there is a method of supplying a carrier gas into the combustion device during the combustion operation. However, in this method, the combustion tends to be unstable because the hydrogen gas and the oxygen gas are diluted by the carrier gas during the combustion.

On the other hand, as a method of preventing combustion from becoming unstable, there is a method of mixing a carrier gas with steam immediately after being generated by a combustion device. FIG. 5 shows an example of a steam supply system for implementing this method. The steam supply system has a combustion device 2 for burning hydrogen (H ₂ ) gas and oxygen (O ₂ ) gas to generate steam, and the generated steam is subjected to a treatment for oxidation treatment. A steam supply pipe 5 for supplying to the furnace is provided. A carrier gas supply pipe 6 for supplying a carrier gas is connected to the steam supply pipe 5, and the steam is supplied to the processing furnace with the concentration adjusted by mixing the carrier gas.

[0005]

However, in the above-mentioned steam supply system, since the normal temperature carrier gas is mixed with the high-temperature steam immediately after generation, the steam is easily condensed and the particles of the steam are liable to become large. Therefore, there is a problem that it is difficult to adjust the water vapor concentration and it is difficult to control an oxide film formed on a semiconductor wafer. Further, in the above-mentioned steam supply system, there is also a problem that a defective oxide film is liable to be generated because steam containing unburned gas at the start of combustion or at the time of incomplete combustion at the end of combustion is also supplied to the processing furnace.

[0006] Therefore, an object of the present invention is to prevent the dew condensation that occurs when the water vapor is mixed with a carrier gas to adjust the concentration and supply the water to the processing furnace, so that the adjustment of the water vapor concentration and the management of the oxide film can be performed. An object of the present invention is to provide a steam supply system and an oxidation treatment apparatus that can be easily manufactured. Another object of the present invention is to provide a steam supply system and an oxidation treatment apparatus that can supply only steam during complete combustion together with a carrier gas to a processing furnace, thereby preventing a defective oxide film and improving the film quality. Is to do.

[0007]

Means for Solving the Problems In order to achieve the above object, the invention according to claim 1 of the present invention provides a carrier gas supplied to a steam supply pipe for supplying steam generated by burning hydrogen gas and oxygen gas. In a steam supply system for connecting a carrier gas supply pipe for supply and adjusting the concentration while mixing steam with the carrier gas and supplying the carrier gas to a processing furnace for oxidation treatment, the carrier gas is supplied to the carrier gas supply pipe at the temperature of the combustion. A heating means for heating to substantially the same temperature as that described above is provided.

According to a second aspect of the present invention, a carrier gas supply pipe for supplying a carrier gas is merged with a steam supply pipe for supplying water vapor generated by burning hydrogen gas and oxygen gas, and the water vapor is mixed with the carrier gas. In the oxidation treatment apparatus for oxidizing a substrate to be treated in the treatment furnace, the carrier gas is supplied to the treatment gas in the treatment furnace, and the carrier gas is supplied to the carrier gas supply pipe. It is characterized in that a heating means for heating to substantially the same temperature is provided.

According to a third aspect of the present invention, the hydrogen gas and the oxygen gas are burned to generate steam, and the steam immediately after the generation is mixed with the carrier gas to adjust the concentration and supply the steam to the processing furnace for the oxidation treatment. In the steam supply system, a steam supply pipe for supplying the steam and a carrier gas supply pipe for supplying the carrier gas are merged to control the flow of the carrier gas so that the flow direction of the steam is directed toward the processing furnace or the exhaust system. Forming a flow direction regulating portion for regulating, heating means for heating the carrier gas to a temperature substantially equal to the combustion temperature upstream of the flow direction regulating portion of the carrier gas supply pipe, and unburned gas during incomplete combustion. A flow rate control that increases the flow rate of the carrier gas to exhaust the contained water vapor to the exhaust system and decreases the flow rate of the carrier gas to supply the water vapor to the processing furnace during complete combustion A Department provided, are in the open during incomplete combustion in the exhaust pipe leading to the exhaust system from the flow direction regulating portion, and characterized by providing an exhaust valve that is in the closed upon complete combustion.

According to a fourth aspect of the present invention, there is provided a steam supply system for generating steam by burning hydrogen gas and oxygen gas, adjusting the concentration while mixing the steam immediately after generation with a carrier gas, and supplying the steam to a processing furnace. An oxidation processing apparatus for oxidizing a substrate to be processed in the processing furnace, wherein a steam supply pipe for supplying the steam and a carrier gas supply pipe for supplying the carrier gas are joined to control the flow of the carrier gas; This forms a flow direction regulating portion for regulating the flow direction of the steam to the processing furnace side or the exhaust system side, and the carrier gas is supplied to the carrier gas upstream of the flow direction regulating portion of the carrier gas supply pipe at substantially the same temperature as the combustion temperature. Heating means to heat the steam to the exhaust system, and increase the flow rate of the carrier gas to exhaust steam containing unburned gas to the exhaust system during incomplete combustion. A flow control unit for reducing the flow rate of the carrier gas to be supplied, and an exhaust valve opened from incomplete combustion and closed during complete combustion is provided in an exhaust pipe from the flow direction regulating unit to the exhaust system. It is characterized by:

[0011]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings.

FIG. 1 is a diagram showing a steam supply system according to a first embodiment of the present invention. The steam supply system 1 includes a combustion device 2 that reacts (combustes) hydrogen (H ₂ ) gas and oxygen (O ₂ ) gas to generate steam (H ₂ O).
It has. The combustion device 2 has a combustion tube 3 formed of a material having heat resistance and corrosion resistance, for example, quartz glass, and is configured to supply hydrogen gas and oxygen gas into the combustion tube 3 for combustion. ing.

The combustion tube 3 is preferably formed in a horizontal shape in order to obtain combustion stability. At one end of the combustion tube 3, nozzles 4a, 4b for injecting hydrogen gas and oxygen gas into the combustion tube 3 are provided. Around the nozzles 4a, 4b, hydrogen gas and oxygen gas are supplied at a temperature equal to or higher than the auto-ignition temperature. Is provided with a heater not shown. A gas source (not shown) for hydrogen gas and oxygen gas is connected to the nozzles 4a and 4b via a flow control mechanism or the like. At the other end of the combustion tube 3 is provided a steam supply tube 5 for supplying steam generated by burning hydrogen gas and oxygen gas in the combustion tube 3. The steam supply pipe 5 is configured to supply steam to a processing furnace 9 for oxidation treatment described later.

The steam supply pipe 5 is connected to a carrier gas supply pipe 6 for mixing the carrier gas with the steam immediately after generation to adjust the steam concentration. As the carrier gas, an inert gas such as a nitrogen (N ₂ ) gas is preferable. The upstream side of the carrier gas supply pipe 6 is connected to a carrier gas source via a flow rate control mechanism or the like.

The carrier gas supply pipe 6 has:
A heater 7 is provided as heating means for heating the carrier gas to substantially the same temperature as the combustion temperature in the combustion device 2. The heater 7 employs, for example, an electric heating type in which a heating resistor 8 is arranged so as to surround the carrier gas supply pipe 6. Another example of the heater 7 is more preferably an instantaneous gas heater that can instantaneously heat the carrier gas flowing in the carrier gas supply pipe 6 by a gas heating method. When the combustion temperature in the combustion device 2 is, for example, 1000 ° C., the heater 7 converts the carrier gas to a temperature substantially equal to the combustion temperature, for example, 1000 ° C.
It is configured to heat to ° C. As long as this condition is satisfied, the heating method of the heater 7 is the same as the illustrated 2 method.
The method is not limited to the method, and another method may be used.

FIG. 2 is a sectional view showing an example of a processing furnace for oxidation treatment. The processing furnace 9 is a batch-type vertical heat treatment furnace configured to simultaneously oxidize a large number of substrates, for example, about 150 wafers to be processed, for example, about 150 wafers, and is a vertically long heat treatment furnace having a closed upper end and an open lower end. Reaction tube 1 made of cylindrical material having heat resistance and corrosion resistance, for example, quartz glass
0 is provided. A lid 11 that opens and closes the opening is provided below the reaction tube 10, and a large number of semiconductor wafers W are supported on the lid 11 in a horizontal state in multiple stages at intervals in the vertical direction. A wafer boat 12 is supported via a heat retaining tube 13.

The lid 11 is connected to an elevating mechanism 14 for carrying the wafer boat 12 in and out of the reaction tube 10 and opening and closing the lid 11. A heater 15 for heating the inside of the reaction tube 10 to a desired temperature, for example, about 400 to 1200 ° C. is provided around the reaction tube 10, and the outside of the heater 15 is covered with a heat insulating material 16. A process gas supply port 17 for connecting the steam supply pipe 5 of the steam system is provided at one side of the reaction tube 10. An exhaust port 18 for exhausting the inside of the reaction tube 10 is provided on the other side of the reaction tube 10. Is connected.

On the other hand, the oxidizing apparatus has the steam supply system 1 and the processing furnace 9, and is configured to contact the semiconductor wafer W with steam in the processing furnace 9 to oxidize. Next, the operation of the steam supply system 1 configured as described above and the oxidation treatment apparatus including the steam supply system 1 will be described. When hydrogen gas and oxygen gas are supplied to the combustion device 2 in the steam supply system 1 and burned, pure water steam is generated and supplied to the steam supply pipe 5.

The carrier gas supplied through the carrier gas supply pipe 6 is preheated to a temperature substantially the same as the combustion temperature in the combustion device 2 in the course of passing through a heater 7 serving as a heating means, and then the steam is It is supplied to the supply pipe 5.
Thereby, the steam is mixed with the carrier gas in the steam supply pipe 5, adjusted to a desired steam concentration, and supplied to the processing furnace 9.

Since the carrier gas is previously heated to a temperature substantially equal to the combustion temperature and then mixed with the steam, the concentration of the steam is adjusted by mixing with the carrier gas to supply the steam to the processing furnace. The resulting condensation can be prevented beforehand, and the adjustment of the water vapor concentration and the management of the oxide film become easy. That is, when the carrier gas is mixed with the water vapor, the water vapor does not condense or the water vapor particles do not become large due to the dew condensation, so that the concentration of the water vapor can be managed as calculated, and the semiconductor wafer W The thickness of the oxide film formed on the surface of the substrate can be easily controlled, and the reproducibility of the oxidation treatment can be improved.

FIGS. 3A and 3B show a steam supply system according to a second embodiment of the present invention. FIG. 3A shows the flow of a carrier gas during incomplete combustion, and FIG. It is a figure which shows the flow of the water vapor of FIG. As in the first embodiment, the steam supply system 1 of the present embodiment converts the hydrogen (H ₂ ) gas and the oxygen (O ₂ ) gas into the combustion tube 3 of the combustion device 2.
To react (combust) the water vapor (H
_The carrier gas supply pipe 6 for supplying ₂ O) is connected to a carrier gas supply pipe 6 for mixing the carrier gas with the steam immediately after generation to adjust the steam concentration.

The steam supply pipe 5 and the carrier gas supply pipe 6 are connected in parallel to each other. The flow of the steam is controlled at the junction by controlling the flow of the carrier gas toward the processing furnace 9 or the exhaust system. Flow direction regulating part 19 to regulate
Are formed. In the flow direction regulating portion 19, a supply pipe 20 leading to the processing furnace 9 from the junction and an exhaust pipe 21 leading to the exhaust system are branched, and the branch point x is on the downstream side of the junction y and It is eccentric to the carrier gas supply pipe 5 side. Thus, when the flow rate of the carrier gas is low, the steam flows to the processing furnace side. However, when the flow rate of the carrier gas is high, the carrier gas flows not only to the processing furnace side but also to the exhaust system side. It is configured to be difficult to flow to As described above, the flow direction regulating portion 19 in the present embodiment can switch the flow direction of the steam by the flow ratio of the carrier gas, and thus can be referred to as a flow ratio valve.

A heater 7 as heating means for heating the carrier gas to a temperature substantially equal to the combustion temperature is provided upstream of the flow direction regulating portion 19 of the carrier gas supply pipe 6. For example, at the start of combustion and at the end of combustion (at the end of the process), the flow rate of the carrier gas is increased so as to exhaust steam containing unburned gas to the exhaust system, and the carrier gas is supplied to the processing furnace 9 at the time of complete combustion. A flow control unit 22 for reducing the flow rate is provided. As the flow controller 22, for example, a flow control valve, preferably a flow controller (MFC) is used.

The flow controller 22 is preferably provided upstream of the heater 7. In addition, the carrier gas supply pipe 6 is provided with a bypass pipe 23 that bypasses the flow rate control unit 22 in order to prevent steam from flowing back toward the flow rate control unit 22 when the flow rate control unit 22 is closed during a power failure. Preferably. The bypass pipe 23 has an on-off valve 24 that is normally closed and opened when a power failure occurs.
The flow of the carrier gas is such that the backflow can be prevented through the bypass pipe 23 at the time of the power failure, thereby preventing the backflow of the steam, and the corrosion of the flow control unit 22 due to the contact of the steam and the corrosion. Therefore, contamination of the semiconductor wafer W due to the above can be prevented beforehand.

An exhaust pipe 21 communicating from the flow direction regulating portion 19 to the exhaust system is provided with an exhaust valve 25 that is opened when incomplete combustion is performed and closed when complete combustion is performed. An inert gas such as nitrogen (N ₂ ) gas is supplied to the exhaust pipe 25 to prevent the backflow of water vapor containing metal, dust, etc., which is a contamination source of the semiconductor wafer W, from the exhaust valve 25 side. A barrier passage 26 that obliquely crosses the upstream side to shield in an air curtain shape;
It is preferable that a bypass pipe 27 that communicates with the bypass valve 6 to bypass the exhaust valve 25 is provided. In addition,
As the backflow preventing means, instead of providing the barrier passage 26 and the bypass pipe 27, the exhaust system may be configured to exhaust the air under reduced pressure.

As means for detecting whether combustion in the combustion device 2 is incomplete combustion or complete combustion, the combustion device 2 includes a flow rate sensor for detecting the flow rates of oxygen gas and hydrogen gas, and nozzles 4a and 4b. A temperature sensor for detecting a heater temperature and a flame sensor for detecting a flame are provided (not shown). When the steam supply system 1 detects incomplete combustion based on the signals from these sensors, the flow control unit 22 is opened to increase the flow rate of the carrier gas, and the exhaust valve is opened. A controller 28 is provided to open the exhaust valve 25 and close the exhaust valve 25 while opening the valve 25 and detecting that the combustion is complete, in order to reduce the flow rate of the carrier gas.

The operation of the steam supply system 1 configured as described above and the oxidation treatment apparatus provided with the steam supply system 1 will be described. When the combustion device 2 in the steam supply system 1 is incomplete combustion, FIG.
As shown in FIG. 7, the controller 28 opens the flow control unit 22 of the carrier gas supply pipe 6 and the
One exhaust valve 25 is opened. As a result, the flow rate of the carrier gas increases, so that the flow direction regulating portion 19
Most of the carrier gas flows to the processing furnace 9 side through the flow path, and part of the carrier gas flows to the exhaust system side. Therefore, the unburned gas or unburned gas flowing from the combustion device 2 to the steam supply pipe 5 is removed. The contained steam is exhausted to the exhaust system without being supplied to the processing furnace 9.

On the other hand, when the combustion device 2 in the steam supply system 1 performs complete combustion, as shown in FIG. 3B, the controller 28 narrows down the flow control unit 22 of the carrier gas supply pipe 6, and , The exhaust valve 25 of the exhaust pipe 21 is closed. As a result, the flow rate of the carrier gas is reduced, so that the steam flows from the steam supply pipe 5 side to the supply pipe 20 to the processing furnace 9 via the flow direction regulating section 19. Therefore, only the steam at the time of complete combustion can be supplied to the processing furnace 9 together with the carrier gas heated via the heater 7, and the dew condensation of the steam is prevented to easily adjust the steam concentration and manage the oxide film. As a result, the quality of the film can be improved by preventing the defective oxide film. Further, by employing the flow direction regulating portion 19, there is no need to provide a mechanical valve in a path connecting the combustion device 2 and the processing furnace 9, so that the problem of contamination of the semiconductor wafer due to the valve is not required. Absent.

FIGS. 4A and 4B show a steam supply system according to another embodiment of the present invention. FIG. 4A shows the flow of steam during incomplete combustion, and FIG. 4B shows steam during complete combustion. It is a figure showing the flow of. The steam supply system 1 of the present embodiment supplies a hydrogen (H ₂ ) gas and an oxygen (O ₂ ) gas into the combustion tube 3 of the combustion device 2 to react (combust) similarly to the first embodiment. The carrier gas supply pipe 6 for supplying the generated steam (H ₂ O) is connected to a carrier gas supply pipe 6 for mixing the carrier gas with the steam immediately after the generation to adjust the steam concentration. .

In this case, the steam supply pipe 5 is branched into a supply pipe 20 leading to the processing furnace 9 and an exhaust pipe 21 leading to the exhaust system. The carrier gas supply pipe 6
Is also branched into two, one branch pipe 6a regulates the flow of steam to the processing furnace 9 side by the flow of the carrier gas, and the other branch pipe 6b directs the flow of steam to the exhaust system side by the flow of the carrier gas. The flow direction regulating portion 19 is formed by being joined to the upstream side of the branch portion of the steam supply pipe 5 so as to regulate the flow direction. Branch pipes 6a and 6 of the carrier gas supply pipe 6
b are provided with switching valves 29a and 29b for switching the flow direction, and are provided with switching valves 29a and 29b of the carrier gas supply pipe 6.
Upstream from b, a heater 7 is provided as heating means for heating the carrier gas to a temperature substantially equal to the combustion temperature.

As means for detecting whether the combustion in the combustion device 2 is incomplete combustion or complete combustion, the combustion device 2 includes a flow sensor for detecting the flow rates of oxygen gas and hydrogen gas, and a heater temperature. A temperature sensor for detecting the flame and a flame sensor for detecting the flame are provided. In addition, when it is detected that the combustion is incomplete by the signals from these sensors, one of the switching valves 2 is provided to the steam supply system 1.
9a is closed and the other switching valve 29b is opened, and when it is detected that the combustion is complete, one switching valve 2b is opened.
A controller 28 for opening 9a and closing the other switching valve 29b is provided.

According to the steam supply system 1 configured as described above and the oxidation treatment apparatus provided with the steam supply system 1, the combustion device 2 in the steam supply system 1 is used.
Is incomplete combustion, as shown in FIG. 4 (a), the controller 28 closes the switching valve 29a of one branch pipe 6a of the carrier gas supply pipe 6 and the other branch pipe. The switching valve 29b of 6b is opened. As a result, the carrier gas flows to the exhaust system side in the flow direction regulating section 19, and the flow of steam is regulated to the exhaust system side. Therefore, the carrier gas contains unburned gas or unburned gas flowing from the combustion device 2 to the steam supply pipe 5. The steam is exhausted to the exhaust system without being supplied to the processing furnace 9.

On the other hand, when the combustion device 2 in the steam supply system 1 is in complete combustion, the switching valve of one branch pipe 6a of the carrier gas supply pipe 6 is controlled by the controller 28 as shown in FIG. 29a is opened, and the switching valve 29b of the other branch pipe 6b is closed. As a result, the carrier gas flows toward the processing furnace through the flow direction regulating portion 19, and the flow of steam is regulated toward the processing furnace. Thus, the steam flowing from the combustion device 2 to the steam supply pipe 5 is converted into the carrier gas. Accordingly, it is supplied to the processing furnace 9. Therefore, only the steam at the time of complete combustion is supplied to the heater 7.
Can be supplied to the processing furnace 9 together with the heated carrier gas through the heater to prevent dew condensation of the water vapor, thereby making it possible to easily adjust the water vapor concentration and control the oxide film, and to improve the film quality by preventing the defective oxide film. Can be achieved.

Although the preferred embodiments of the present invention have been described in detail with reference to the drawings, the present invention is not limited to the above-discussed preferred embodiments, and various design changes and the like can be made without departing from the scope of the present invention. Is possible. For example, the combustion device 2 may be used as a carrier gas heating unit. in this case,
The carrier gas supply pipe 6 may be penetrated into the combustion pipe 3 of the combustion device 2 or may be provided by being wound around the outer circumference of the combustion pipe 3.
According to this, since no separate heating means is required, the apparatus can be made compact and the cost can be reduced by simplifying the structure. The processing furnace may be a batch type horizontal furnace or a single wafer type.

[0035]

In summary, according to the present invention, the following effects can be obtained.

(1) According to the steam supply system according to the first aspect or the oxidation treatment apparatus according to the second aspect, the heating means for heating the carrier gas to the carrier gas supply pipe to substantially the same temperature as the combustion temperature. Is provided, it is possible to prevent the dew condensation occurring when the steam is adjusted to a concentration by mixing with the carrier gas and supplied to the processing furnace, and the adjustment of the steam concentration and the management of the oxide film can be easily performed. .

(2) According to the steam supply system of the third aspect or the oxidation treatment apparatus of the fourth aspect, the steam supply pipe for supplying the steam and the carrier gas supply pipe for supplying the carrier gas are merged to form the carrier gas. Forming a flow direction regulating portion that regulates the flow direction of the steam to the processing furnace side or the exhaust system side by controlling the flow of the carrier gas. Heating means for heating to approximately the same temperature as the temperature,
A flow control unit that increases the flow rate of the carrier gas to exhaust steam containing unburned gas to the exhaust system during incomplete combustion, and reduces the flow rate of the carrier gas to supply steam to the processing furnace during complete combustion, Since the exhaust pipe from the flow direction regulating section to the exhaust system is provided with an exhaust valve that is opened during incomplete combustion and closed during complete combustion, only steam during complete combustion is supplied together with the heated carrier gas. Thus, it is possible to prevent the dew condensation of the water vapor, to easily adjust the water vapor concentration and to control the oxide film, and to prevent the defective oxide film to improve the film quality.

[Brief description of the drawings]

FIG. 1 is a diagram showing a steam supply system according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating an example of a processing furnace included in the oxidation processing apparatus.

3A and 3B are diagrams showing a steam supply system according to a second embodiment of the present invention, wherein FIG. 3A shows a flow of a carrier gas at the time of incomplete combustion, and FIG. It is a figure showing a flow.

4A and 4B are diagrams showing a steam supply system according to another embodiment of the present invention, in which FIG. 4A shows the flow of steam during incomplete combustion, and FIG. 4B shows the flow of steam during complete combustion. FIG.

FIG. 5 is a diagram showing an example of a conventional steam supply system.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Steam supply system 5 Steam supply pipe 6 Carrier gas supply pipe 7 Heater (heating means) 9 Processing furnace 19 Flow direction regulation part 22 Flow control part 25 Exhaust valve

Claims (4)

[Claims] 1. A carrier gas supply pipe for supplying a carrier gas is connected to a steam supply pipe for supplying steam generated by burning hydrogen gas and oxygen gas, and the concentration is adjusted while mixing the steam with the carrier gas. A steam supply system for supplying a treatment furnace for oxidation treatment, wherein a heating means for heating a carrier gas to a temperature substantially equal to the combustion temperature is provided in the carrier gas supply pipe. 2. A carrier gas supply pipe for supplying a carrier gas is connected to a steam supply pipe for supplying steam generated by burning hydrogen gas and oxygen gas, and the concentration is adjusted while mixing the steam with the carrier gas. In an oxidation treatment apparatus having a steam supply system for supplying a processing furnace and bringing a substrate to be processed into contact with steam in the processing furnace to oxidize, a carrier gas is supplied to the carrier gas supply pipe at substantially the same temperature as the combustion temperature. An oxidation treatment device comprising a heating means for heating to a temperature. 3. A steam supply system for producing steam by burning hydrogen gas and oxygen gas, adjusting the concentration while mixing the steam immediately after generation with a carrier gas, and supplying the adjusted steam to a processing furnace for oxidation treatment. A flow direction regulating unit that regulates the flow direction of steam to the processing furnace side or the exhaust system side by controlling the flow of the carrier gas by merging a steam supply pipe that supplies steam and a carrier gas supply pipe that supplies the carrier gas. And heating means for heating the carrier gas to a temperature substantially equal to the combustion temperature upstream of the flow direction regulating portion of the carrier gas supply pipe, and steam containing unburned gas to the exhaust system during incomplete combustion. A flow controller for increasing the flow rate of the carrier gas to exhaust the gas, and reducing the flow rate of the carrier gas to supply steam to the processing furnace during complete combustion; A steam supply system, characterized in that an exhaust pipe, which is opened when incomplete combustion is performed and is closed when complete combustion is performed, is provided in an exhaust pipe connected to the exhaust system from the direction regulating section. 4. A steam supply system comprising: generating steam by burning hydrogen gas and oxygen gas; adjusting the concentration while mixing the steam immediately after generation with a carrier gas; Controlling the flow of a carrier gas by combining a steam supply pipe for supplying the steam and a carrier gas supply pipe for supplying the carrier gas in an oxidation treatment apparatus for oxidizing a substrate to be treated by contacting the substrate with steam therein; Forming a flow direction restricting portion for restricting the flow direction of steam to the processing furnace side or the exhaust system side, and bringing the carrier gas upstream of the flow direction restricting portion of the carrier gas supply pipe to substantially the same temperature as the combustion temperature. Heating means for heating and increasing the flow rate of carrier gas to exhaust steam containing unburned gas to the exhaust system during incomplete combustion, and supply steam to the processing furnace during complete combustion A flow control unit for reducing the flow rate of the carrier gas in order to minimize the flow rate of the carrier gas, and an exhaust valve which is opened when incomplete combustion and closed when complete combustion is provided in an exhaust pipe from the flow direction regulating unit to the exhaust system. An oxidation treatment apparatus characterized by the above-mentioned.