JP3449630B2 - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JP3449630B2 JP3449630B2 JP19798993A JP19798993A JP3449630B2 JP 3449630 B2 JP3449630 B2 JP 3449630B2 JP 19798993 A JP19798993 A JP 19798993A JP 19798993 A JP19798993 A JP 19798993A JP 3449630 B2 JP3449630 B2 JP 3449630B2
- Authority
- JP
- Japan
- Prior art keywords
- heater
- boat
- temperature
- reaction chamber
- temperature sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は半導体製造工程の１つで
あり、ウェーハに薄膜を蒸着するＣＶＤ（Ｃｈｅｍｉｃ
ａｌ Ｖａｐｏｒ Ｄｉｐｏｓｉｔｉｏｎ）工程、酸化
膜を生成する酸化工程、或はウェーハの拡散、熱処理の
工程に供される縦型炉を具備した半導体製造装置に関す
るものである。
【０００２】
【従来の技術】従来の半導体製造装置の縦型炉を図４に
より説明する。
【０００３】ウェーハ加熱用のヒータ１内に外部反応管
２が設置され、該外部反応管２内に内部反応管３が同心
に設けられている。前記外部反応管２と内部反応管３に
より下端が閉塞された円筒状の空間６が形成される。前
記内部反応管３の下方にガス導入管１０が接続され、前
記空間６の下端には排気管１１が接続される。図示しな
いボートエレベータに設けられたボート載置台４にはボ
ートキャップ５を介してボート７が乗置され、該ボート
７は図示しないボートエレベータにより前記内部反応管
３内に装入される。前記外部反応管２は反応室を画成す
る。前記空間６上端近傍（反応室上部）には温度センサ
１２が挿入され、該温度センサ１２よる検出結果は温度
制御器１３に入力され、検出される温度が一定になる
様、前記ヒータ１が制御される。
【０００４】前記ヒータ１により反応室内部が加熱され
た状態で、前記ボート７に装填されたウェーハ８が反応
室内に装入され、反応室が排気された後、前記ガス導入
管１０より反応ガスが導入され、排気管１１より排気さ
れて、ウェーハ８の処理が行われる。処理完了後不活性
ガスを供給して大気圧に復帰させ、前記ボート７を降下
させ引出す。
【０００５】
【発明が解決しようとする課題】前記半導体製造装置の
縦型炉では、処理の度に反応室へウェーハ８の装入、引
出しを行っており、装入、引出しの度に反応室下部（炉
口部近傍、図４中Ａ部分）の温度が低下する。ところが
前記温度センサ１２は反応室上部の而もヒータ１近傍の
温度検出を行っている。反応室上部の温度はボート７の
出入れに大きく影響されないと共に温度センサ１２はヒ
ータ１の発熱状態に大きく影響されるので、一時的に該
温度センサ１２は反応室下部の温度を正確には反映しな
い状態を生ずる。従って、温度センサ１２の検出結果で
前記ヒータ１を制御して、反応室下部の温度を安定させ
るには多くの時間を要するという問題があった。
【０００６】本発明は斯かる実情に鑑み、短時間で反応
室の温度の回復安定を達成し、ウェーハの処理時間の短
縮を図ろうとするものである。
【０００７】
【課題を解決するための手段】本発明は、ウェーハ加熱
用のヒータ内部に反応管が設置され、ボートに装填され
たウェーハが前記反応管内反応室に装入、引出しされる
半導体製造装置に於いて、前記ボートはボートキャップ
に乗置され、炉口ヒータを該炉口ヒータが前記ヒータの
下端を閉塞する様に前記ボートキャップの上端部に設
け、前記反応室下部の前記反応管と前記ボートの間に温
度センサを設け、該温度センサの検出結果に基づき前記
ヒータ、炉口ヒータの加熱を制御する様構成したことを
特徴とするものである。
【０００８】
【作用】ボートを反応室に装入すると、反応室下部の温
度が低下するが、温度センサが反応室下部の温度を検出
する。従って、該温度センサの温度検出結果を基に迅速
な温度回復、温度の安定を行える。
【０００９】
【実施例】以下、図面を参照しつつ本発明の一実施例を
説明する。
【００１０】尚、図１中、図４中で示したものと同一の
ものには同符号を付してある。
【００１１】ウェーハ加熱用のヒータ１内に外部反応管
２が設置され、該外部反応管２内に内部反応管３が同心
に設けられている。図示しないボートエレベータに設け
られたボート載置台４にはボートキャップ５を介してボ
ート７が乗置され、該ボート７は図示しないボートエレ
ベータにより前記内部反応管３内に装入される。温度セ
ンサ１２を前記ボート載置台４に貫通させ、ボートキャ
ップ５の上端近傍、即ち反応室下部に位置させて設け
る。該温度センサ１２よる検出結果は温度制御器１３に
入力され、検出される温度が一定になる様、前記ヒータ
１が制御される。
【００１２】ウェーハ８の処理については上記従来例と
同様であるので説明を省略する。
【００１３】温度センサ１２による温度検出結果を基に
前記ヒータ１を制御し、反応室の温度の安定を図った場
合、前記温度センサ１２がボート７の出入れに伴う反応
室下部の温度変化を検出し、而もヒータ１自体の発熱状
態の影響を余り受けない位置にあるので、反応室の温度
制御は効果的に行われ、反応室下部の迅速な昇温安定を
実現することができる。
【００１４】図２に示す実施例は、反応室下部ボートキ
ャップ５の上端位置に炉口ヒータ１４を設ける。該炉口
ヒータ１４を設けることで、前記ヒータ１下端開口部を
前記炉口ヒータ１４で略閉塞した状態となり、前記ヒー
タ１、炉口ヒータ１４により反応室が囲繞される。而し
て、ボート７の出入れに伴う反応室下部の温度が低下し
た場合に、温度の低下を前記温度センサ１２が迅速に検
知し、更に前記炉口ヒータ１４が反応室下部を加熱し、
所要の温度迄昇温させる。従って、より迅速な反応室の
温度の安定を実現することができる。
【００１５】図３に示す実施例は反応室下部に炉口ヒー
タ１４を設け、前記温度センサ１２を前記空間６の下部
に位置させたものであり、本実施例でも同様に反応室下
部の温度検出が行え、前記炉口ヒータ１４により反応室
下部を加熱し、迅速に所要の温度に昇温安定化させるこ
とができる。
【００１６】
【発明の効果】以上述べた如く本発明によれば、ボート
の出入れに伴う反応室下部の温度の低下を迅速に回復さ
せることができ、炉内温度の安定時間の短縮が図れ、ス
ループットが向上し、半導体製造コストの低減が可能に
なるという優れた効果を発揮する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is one of the semiconductor manufacturing processes, and is a process for forming a thin film on a wafer by CVD (Chemic).
al Vapor Diposition) step, an oxidation step to produce an oxidized film, or diffusion of the wafer, a <br/> shall relates to a semiconductor manufacturing equipment provided with the vertical furnace to be subjected to the heat treatment step. 2. Description of the Related Art A vertical furnace of a conventional semiconductor manufacturing apparatus will be described with reference to FIG. An external reaction tube 2 is provided in a heater 1 for heating a wafer, and an internal reaction tube 3 is provided concentrically in the external reaction tube 2. The outer reaction tube 2 and the inner reaction tube 3 form a cylindrical space 6 whose lower end is closed. A gas introduction pipe 10 is connected below the internal reaction pipe 3, and an exhaust pipe 11 is connected to a lower end of the space 6. A boat 7 is mounted on a boat mounting table 4 provided on a boat elevator (not shown) via a boat cap 5, and the boat 7 is loaded into the internal reaction tube 3 by a boat elevator (not shown). The external reaction tube 2 defines a reaction chamber. A temperature sensor 12 is inserted near the upper end of the space 6 (upper part of the reaction chamber), and the result of detection by the temperature sensor 12 is input to a temperature controller 13 so that the heater 1 is controlled so that the detected temperature becomes constant. Is done. [0004] While the inside of the reaction chamber is heated by the heater 1, the wafer 8 loaded in the boat 7 is loaded into the reaction chamber, and the reaction chamber is evacuated. Is introduced and exhausted from the exhaust pipe 11 to process the wafer 8. After the treatment is completed, an inert gas is supplied to restore the atmospheric pressure, and the boat 7 is lowered and pulled out. In the vertical furnace of the semiconductor manufacturing apparatus, the wafer 8 is loaded and unloaded into the reaction chamber every time the processing is performed, and the reaction chamber is loaded and unloaded every time the wafer 8 is loaded and unloaded. The temperature of the lower part (near the furnace port, part A in FIG. 4) decreases. However, the temperature sensor 12 detects the temperature in the vicinity of the heater 1 in the upper part of the reaction chamber. Since the temperature in the upper part of the reaction chamber is not greatly affected by the entry and exit of the boat 7 and the temperature sensor 12 is greatly affected by the heat generation state of the heater 1, the temperature sensor 12 temporarily temporarily reflects the temperature in the lower part of the reaction chamber. Will result in a state that does not. Therefore, there is a problem that much time is required to control the heater 1 based on the detection result of the temperature sensor 12 to stabilize the temperature in the lower portion of the reaction chamber. The present invention has been made in view of such circumstances, and aims to achieve a stable recovery of the temperature of a reaction chamber in a short time and to shorten the processing time of a wafer. According to the present invention, there is provided a semiconductor manufacturing method in which a reaction tube is installed inside a heater for heating a wafer, and a wafer loaded in a boat is loaded and unloaded into the reaction chamber in the reaction tube. in the equipment, the boat is a boat cap
And the furnace port heater is connected to the heater.
Set at the upper end of the boat cap so that the lower end is closed.
A temperature sensor is provided between the reaction tube and the boat at the lower part of the reaction chamber , and based on a detection result of the temperature sensor,
It is characterized in that the heating of the heater and the furnace port heater is controlled . When the boat is loaded into the reaction chamber, the temperature in the lower part of the reaction chamber decreases, but the temperature sensor detects the temperature in the lower part of the reaction chamber. Therefore, rapid temperature recovery and temperature stabilization can be performed based on the temperature detection result of the temperature sensor. An embodiment of the present invention will be described below with reference to the drawings. In FIG. 1, the same components as those shown in FIG. 4 are denoted by the same reference numerals. An external reaction tube 2 is provided in a heater 1 for heating a wafer, and an internal reaction tube 3 is provided concentrically in the external reaction tube 2. A boat 7 is mounted on a boat mounting table 4 provided on a boat elevator (not shown) via a boat cap 5, and the boat 7 is loaded into the internal reaction tube 3 by a boat elevator (not shown). A temperature sensor 12 penetrates the boat mounting table 4 and is provided near the upper end of the boat cap 5, that is, at a lower portion of the reaction chamber. The result of detection by the temperature sensor 12 is input to a temperature controller 13, and the heater 1 is controlled so that the detected temperature becomes constant. The processing of the wafer 8 is the same as that of the above-mentioned conventional example, and the description is omitted. When the heater 1 is controlled based on the result of temperature detection by the temperature sensor 12 to stabilize the temperature of the reaction chamber, the temperature sensor 12 detects a temperature change in the lower part of the reaction chamber accompanying the entrance and exit of the boat 7. Since the temperature is detected and the position is not much affected by the heat generation state of the heater 1 itself, the temperature control of the reaction chamber is effectively performed, and the rapid temperature rise of the lower portion of the reaction chamber can be realized. In the embodiment shown in FIG. 2, a furnace port heater 14 is provided at the upper end position of the lower boat cap 5 of the reaction chamber. By providing the furnace port heater 14, the lower end opening of the heater 1 is substantially closed by the furnace port heater 14, and the reaction chamber is surrounded by the heater 1 and the furnace port heater 14. Thus, when the temperature in the lower part of the reaction chamber decreases as the boat 7 moves in and out, the temperature sensor 12 quickly detects the decrease in temperature, and the furnace port heater 14 heats the lower part of the reaction chamber.
Raise the temperature to the required temperature. Therefore, the temperature of the reaction chamber can be more quickly stabilized. In the embodiment shown in FIG. 3, a furnace port heater 14 is provided at the lower part of the reaction chamber, and the temperature sensor 12 is located at the lower part of the space 6. In the present embodiment, the temperature of the lower part of the reaction chamber is similarly set. Detection can be performed, and the lower portion of the reaction chamber can be heated by the furnace port heater 14 to quickly stabilize the temperature to a required temperature. As described above, according to the present invention, a decrease in the temperature in the lower part of the reaction chamber due to the entry and exit of the boat can be quickly recovered, and the stabilization time of the furnace temperature can be shortened. In addition, the present invention has an excellent effect that the throughput is improved and the semiconductor manufacturing cost can be reduced.
【図面の簡単な説明】 【図１】本発明の一実施例を示す説明図である。 【図２】本発明の他の実施例を示す説明図である。 【図３】本発明の更に他の実施例を示す説明図である。 【図４】従来例の説明図である。 【符号の説明】 １ ヒータ ２ 外部反応管 ３ 内部反応管 ５ ボートキャップ ６ 空間 ７ ボート ８ ウェーハ １２ 温度センサ １３ 温度制御器 １４ 炉口ヒータ[Brief description of the drawings] FIG. 1 is an explanatory diagram showing one embodiment of the present invention. FIG. 2 is an explanatory view showing another embodiment of the present invention. FIG. 3 is an explanatory view showing still another embodiment of the present invention. FIG. 4 is an explanatory diagram of a conventional example. [Explanation of symbols] 1 heater 2 External reaction tubes 3 Internal reaction tubes 5 Boat cap 6 space 7 boat 8 wafer 12 Temperature sensor 13 Temperature controller 14 Furnace heater
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｈ０１Ｌ 21/324 Ｈ０１Ｌ 21/324 Ｔ ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification code FI H01L 21/324 H01L 21/324 T
Claims (1)
設置され、ボートに装填されたウェーハが前記反応管内
反応室に装入、引出しされる半導体製造装置に於いて、
前記ボートはボートキャップに乗置され、炉口ヒータを
該炉口ヒータが前記ヒータの下端を閉塞する様に前記ボ
ートキャップの上端部に設け、前記反応室下部の前記反
応管と前記ボートの間に温度センサを設け、該温度セン
サの検出結果に基づき前記ヒータ、炉口ヒータの加熱を
制御する様構成したことを特徴とする半導体製造装置。 (57) Patent Claims 1. A reaction tube is installed in the heater inside the wafer heating, charged into wafers loaded in the boat is the reaction tube reaction chamber, a semiconductor manufacturing equipment which is drawers At
The boat is mounted on a boat cap,
The heater so that the furnace port heater closes the lower end of the heater.
Provided at the upper end portion of Tokyappu, the reaction chamber lower portion of the reaction
応管and a temperature sensor disposed between the boat, the temperature sensor
Heating of the heater and furnace port heater based on the detection result of
Semiconductor production equipment, characterized by being configured such that it controls.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19798993A JP3449630B2 (en) | 1993-07-15 | 1993-07-15 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19798993A JP3449630B2 (en) | 1993-07-15 | 1993-07-15 | Semiconductor manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0729838A JPH0729838A (en) | 1995-01-31 |
| JP3449630B2 true JP3449630B2 (en) | 2003-09-22 |
Family
ID=16383664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19798993A Expired - Lifetime JP3449630B2 (en) | 1993-07-15 | 1993-07-15 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3449630B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9666459B2 (en) | 2013-03-12 | 2017-05-30 | Samsung Electronics Co., Ltd. | Apparatus for processing wafers |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11142433A (en) | 1997-11-10 | 1999-05-28 | Mitsubishi Electric Corp | Probe for vertical needle type probe card and manufacture thereof |
| JP4522507B2 (en) * | 1999-02-22 | 2010-08-11 | 株式会社日立国際電気 | Semiconductor manufacturing apparatus and heat treatment method in semiconductor manufacturing apparatus |
| JP3641193B2 (en) * | 2000-06-30 | 2005-04-20 | 東京エレクトロン株式会社 | Vertical heat treatment apparatus, heat treatment method, and heat insulation unit |
| US6833418B2 (en) | 2002-04-05 | 2004-12-21 | 3M Innovative Properties Company | Dispersions containing perfluorovinyl ether homopolymers and use thereof |
| KR101299715B1 (en) * | 2012-06-22 | 2013-08-28 | 디플러스(주) | Inspection socket using bidirectional buckling pin |
| CN107408505B (en) * | 2015-02-25 | 2021-03-09 | 株式会社国际电气 | Substrate processing apparatus, heater, and method for manufacturing semiconductor device |
| JP6855185B2 (en) | 2016-07-27 | 2021-04-07 | 株式会社日本マイクロニクス | Electrical connection device |
-
1993
- 1993-07-15 JP JP19798993A patent/JP3449630B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9666459B2 (en) | 2013-03-12 | 2017-05-30 | Samsung Electronics Co., Ltd. | Apparatus for processing wafers |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0729838A (en) | 1995-01-31 |
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