JPS63181017U - - Google Patents

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Publication number
JPS63181017U
JPS63181017U JP7254187U JP7254187U JPS63181017U JP S63181017 U JPS63181017 U JP S63181017U JP 7254187 U JP7254187 U JP 7254187U JP 7254187 U JP7254187 U JP 7254187U JP S63181017 U JPS63181017 U JP S63181017U
Authority
JP
Japan
Prior art keywords
transistor
base
power supply
impedance
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7254187U
Other languages
Japanese (ja)
Other versions
JPH0533061Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7254187U priority Critical patent/JPH0533061Y2/ja
Publication of JPS63181017U publication Critical patent/JPS63181017U/ja
Application granted granted Critical
Publication of JPH0533061Y2 publication Critical patent/JPH0533061Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Amplifiers (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案の一実施例を示す図、第２図は
本考案に用いられるベースインピーダンスＺＢの
別の構成法を示す図、第３図は本考案の別の実施
例を示す図、第４図は本考案の一実施例の効果を
示す図、第５図は従来の回路を示す図、第６図は
ベース接地トランジスタのπ型等価回路を示す図
である。 Ｑ１，Ｑ２：トランジスタ、ＺＢ：ベースイン
ピーダンス、ＺＬ：負荷インピーダンス、ＶＩＮ
：入力信号、ＶＯＵＴ：出力電圧、ＶＢ：バイア
ス電源、ＶＣ：増幅器電源。 FIG. 1 is a diagram showing one embodiment of the present invention, FIG. 2 is a diagram showing another configuration method of the base impedance ZB used in the present invention, and FIG. 3 is a diagram showing another embodiment of the present invention. FIG. 4 is a diagram showing the effect of an embodiment of the present invention, FIG. 5 is a diagram showing a conventional circuit, and FIG. 6 is a diagram showing a π-type equivalent circuit of a common-base transistor. Q1 , Q2 : Transistor, ZB: Base impedance, ZL: Load impedance, VIN
: input signal, VOUT: output voltage, VB: bias power supply, VC: amplifier power supply.

Claims (1)

【実用新案登録請求の範囲】 入力信号がベースに印加されたエミツタ接地の
第１トランジスタと前記第１トランジスタのコレ
クタとエミツタとが接続され、ベースはバイアス
電源を介し接地され、コレクタは負荷インピーダ
ンスと電源との直列回路を介し接地されたベース
接地形第２トランジスタとのカスコード接続から
なる増幅器に於いて、前記第２トランジスタのベ
ースと前記バイアス電源との間に以下の式を満足
するインピーダンスＺＢを挿入したことを特徴と
する高耐圧広帯域増幅器。 ＺＢ≧２０２πｆＴ・ＣＢＣ ここでｆＴは前記第２トランジスタのカツトオ
フ周波数、ＣＢＣはベース‐コレクタ間静電容量
、ＺＢはｆＴ近辺で抵抗性となるインピーダンス
である。[Claims for Utility Model Registration] A first transistor whose emitter is grounded to which an input signal is applied is connected to the collector and emitter of the first transistor, the base is grounded via a bias power supply, and the collector is connected to a load impedance. In an amplifier having a cascode connection with a second transistor whose base is grounded via a series circuit with a power supply, an impedance ZB satisfying the following formula is provided between the base of the second transistor and the bias power supply. A high-voltage wideband amplifier characterized by the insertion of ZB≧202πfT·CBC Here, fT is the cutoff frequency of the second transistor, CBC is the base-collector capacitance, and ZB is the impedance that becomes resistive near fT.
JP7254187U 1987-05-15 1987-05-15 Expired - Lifetime JPH0533061Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7254187U JPH0533061Y2 (en) 1987-05-15 1987-05-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7254187U JPH0533061Y2 (en) 1987-05-15 1987-05-15

Publications (2)

Publication Number Publication Date
JPS63181017U true JPS63181017U (en) 1988-11-22
JPH0533061Y2 JPH0533061Y2 (en) 1993-08-24

Family

ID=30916079

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7254187U Expired - Lifetime JPH0533061Y2 (en) 1987-05-15 1987-05-15

Country Status (1)

Country Link
JP (1) JPH0533061Y2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101882912A (en) * 2010-04-30 2010-11-10 苏州英诺迅科技有限公司 Radio-frequency CASCODE structure power amplifier with improved linearity and power added efficiency
CN101888214A (en) * 2010-04-30 2010-11-17 苏州英诺迅科技有限公司 Cascode power amplifier with improved efficiency and linearity
JP2015201865A (en) * 2000-09-15 2015-11-12 クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ Cmos transceiver having integrated power amplifier

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015201865A (en) * 2000-09-15 2015-11-12 クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ Cmos transceiver having integrated power amplifier
CN101882912A (en) * 2010-04-30 2010-11-10 苏州英诺迅科技有限公司 Radio-frequency CASCODE structure power amplifier with improved linearity and power added efficiency
CN101888214A (en) * 2010-04-30 2010-11-17 苏州英诺迅科技有限公司 Cascode power amplifier with improved efficiency and linearity

Also Published As

Publication number Publication date
JPH0533061Y2 (en) 1993-08-24

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