JPS63175326A - Ion processing device - Google Patents

Abstract

PURPOSE:To make it possible to regulate an incident angle of on-beams to surfaces of wafers by rotating a disc so as to be in its horizontal or standing states to a central axis for the disc and wafers by the use of an inversion mechanism. CONSTITUTION:While a disc 4 is held in a horizontal state, wafers 2 are mounted/dismounted by a wafer mounting/dismounting mechanism involving a carrier belt 36. Next, while the disc 4 is held in its prescribed standing state, a peripheral part of the disc 4 is moved to an irradiation region for ion beams 10. Next, while the disc is rotated and moved parallel, respective wafers 2 are irradiated serially with the beams 10, and then processes such as ion implantation are performed for the wafers. An incident angle of the beams 10 to the surface of each wafer is regulated by defining a standing angle of the disc 4 by the use of a disc invertion motor 32. At that time the disc is rotated in a D direction around a central axis M which approximately passes through both a center of the disc 4 and that of a processing surface S of the wafer 2 situated on the ion beam irradiation position.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a so-called batch-type ion processing apparatus that processes (for example, ion implantation) a plurality of wafers mounted on a rotating disk at once. .

[Conventional technology]

In this type of equipment, the wafer is attached to and removed from the disk with the disk in an almost horizontal position for reasons such as ease of handling the wafer, and the ion beam is usually sent in a horizontal direction, so This is generally done with the disc in an upright position.

Such an apparatus is capable of not only processing wafers but also attaching and removing wafers to and from disks in a vacuum, thereby preventing contamination of the wafers and shortening the evacuation time. This method has been proposed separately by the same applicant (see Japanese Unexamined Patent Publication No. 133546/1983).

The outline thereof will be explained with reference to FIG. 4 and the like. A disk 4 onto which a plurality of wafers 2 can be attached is housed in a vacuum container 6a that is evacuated by an evacuation device (not shown). There is. In addition, the vacuum container 6a has two positions in which the disk 4 is placed in a substantially horizontal state (shown by a solid line in the figure) and an upright state in which it is raised at a predetermined angle (for example, 90 degrees) from the horizontal (state B shown by a two-dot chain line in the figure). A disk drive device 12 is installed, which includes a disk overturning mechanism that rotates the disk 4 between the disks, and a disk rotation/translation mechanism that rotates the disk 4 in an upright state as shown by arrow B and translates it as shown by arrow C, for example.

The details of the disk drive device 12 will be explained with reference to FIG. 5. A disk rotation motor 18 and a disk translation motor 24 are attached to a casing 16 supported by a bearing 14 in a vacuum container 6a. The rotational movement of the ball screw 26 connected to the disk translation motor 24 is converted into a translational movement of the shaft 30 in the direction of arrow C through the pole nut 28 that is threaded therewith.
The mechanism section 22 attached to the tip of the mechanism section 22 and the disk 4 attached thereto are translated. Further, the rotational movement of the rotating shaft 20 connected to the disk rotation motor 18 is as follows.
The rotational movement of the disk 4 in the direction of arrow B is changed via the mechanism section 22 . On the other hand, the gear 34 attached to the rotating shaft of the disk overturning motor 32 and the teeth on the outer periphery of the casing 16 mesh with each other, and the disk overturning motor 32 rotates the entire casing 16 around its central axis. direction, thereby keeping the disk 4 in a substantially horizontal and upright position.

Referring again to FIG. 4, when loading and unloading the wafer 2 onto the disk 4, the disk 4 is kept in a substantially horizontal state, and the elevating and reversible conveyor belt 36 provided below the predetermined periphery is moved. A wafer attachment/detachment mechanism includes a wafer attachment/detachment mechanism that raises and lowers a wafer holder (not shown) on the disk 4 and sequentially loads and unloads the wafers 2 one by one. At that time, disk 4
is rotated by a predetermined pitch, for example, as indicated by arrow A, by a mechanism not shown. Note that 38 is a reversible conveyor belt for loading and unloading the wafer 2.

On the other hand, when processing the wafer 2 mounted on the disk 4, the disk 4 is kept in an upright state, its peripheral portion is placed in the processing chamber 8 adjacent to the vacuum chamber 6a in this example, and the disk 4 is While rotating and translating the
Each wafer 2 on the disk 4 is sequentially irradiated with an ion beam 10 to perform processing such as ion implantation. In order to further improve the processing capacity, a vacuum vessel 6b or the like having the same structure as the vacuum vessel 6a side may be provided on the opposite side of the processing chamber 8 as in this example.

[Problem that the invention seeks to solve]

In recent years, ion implantation has been performed by irradiating ion beams onto the side walls of recesses carved on the surface of wafer 2, or
The incident angle of the ion beam 10 to the surface of the wafer 2 (i.e., the angle formed by the ion beam IO and the perpendicular to the surface of the wafer 2; see θ in FIG. 3) is changed for reasons such as improving the uniformity of ion implantation against the surface of the wafer 2. There is an increasing demand for devices that can do this.

To deal with this, the disk tipping mechanism
The most practical method is to adjust the standing angle of the wafer 2 on the disk 4, but in the disk overturning mechanism in the ion processing apparatus, as shown in FIG. Since there is a large discrepancy between the disc 4 and the disc 4, as shown in FIG.
If it is changed from (for example, shape B indicated by a two-dot chain line), the center of the ion beam 10 and the center of the wafer 2 at the ion beam irradiation position will shift, making it impossible to achieve the initial objective.

SUMMARY OF THE INVENTION An object of the present invention is to further improve the ion processing apparatus as described above, and to enable adjustment of the incident angle of the ion beam with respect to the wafer surface using a disk overturning mechanism.

[Means for solving problems]

In the ion processing apparatus of the present invention, the disk overturning mechanism moves the disk between a substantially horizontal state and an upright state about a central axis that substantially passes through the center of the disk and the center of the processing surface of the wafer at the ion beam irradiation position. It is characterized by rotating.

[Effect]

According to the above-mentioned disk overturning mechanism, even if the standing angle of the disk is changed, the center of the ion beam and the center of the wafer at the ion beam irradiation position on the disk do not shift, and therefore the incident angle of the ion beam with respect to the wafer surface is maintained. can be easily adjusted.

〔Example〕

FIG. 1 is a cross-sectional view partially showing an ion processing apparatus according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view showing a line n-n in FIG.
FIG. The same or corresponding parts as in FIGS. 4 and 5 are given the same reference numerals, and the differences from the conventional example will be mainly explained below.

In this embodiment, two rotary plates 40a and 40b are provided on the left and right side walls of a vacuum container 6, which also serves as a processing chamber, and are rotatably supported by bearings 14 and the like in a vacuum-sealed state.

Two upper and lower guide shafts 42 passing through the mechanism section 22 are passed between both rotating plates 40a and 40b.

One rotating plate 40a has a guide 54 and a mounting base 5.
6, a disk rotation motor 18 and a disk translation motor 24 are attached so as to be able to reciprocate as shown by arrow E. The rotational movement of the rotating shaft 20 connected to the disk rotation motor 18 is converted into the rotational movement of the disk 4 in the direction of arrow B via the mechanism section 22. 44 is an O-ring for vacuum sealing.

Further, a ball screw 52 is provided protruding from the rotary plate 40a, and a ball nut 50 which is screwed into the pole screw 52 is pivotally supported on a mounting base 56. A gear 46 attached to the rotating shaft of the disk translation motor 24 and a gear 48 attached to the pole nut 50 mesh with each other, and the rotational movement of the disk translation motor 24 is controlled by the mounting base 5.
6 and the equipment attached thereto into a translational movement as shown by the arrow E, thereby via the rotation axis 20,
The mechanism section 22 and the disk 4 attached thereto are translated in the direction of arrow C.

On the other hand, the gear 34 attached to the rotating shaft of the disk overturning motor 32 and the teeth on the outer periphery of the rotating plate 40a mesh with each other, and the disk overturning motor 32 causes the rotating plate 40a,
40b and the entire equipment attached to them can be rotated in the direction of the arrow, thereby rotating the disk 4 between a substantially horizontal position and an upright position. In that case, the central axis M of rotation of the rotary plates 40a, 40b is made to pass approximately through the center O of the disk 4 and the center of the processing surface S of the wafer 2 at the ion beam irradiation position, and the disk 4 is The robot is rotated about the axis M between a horizontal state and an upright state as shown by the arrow.

In the apparatus of this embodiment, when attaching and detaching the wafer 2 to and from the disk 4, the disk 4 is kept in a substantially horizontal state as shown by the two-dot chain line, and the wafer including the conveyor belt 36 is attached and detached, as in the case of the conventional example. The wafer 2 is attached and detached by the mechanism. Further, the wafer 2 is carried in and out using a conveyor belt 38.

On the other hand, when processing the wafer 2 mounted on the disk 4, the disk 4 is kept in a predetermined upright state as shown by the solid line, the peripheral edge of the disk 4 is moved to the irradiation area of the ion beam 10, and the disk 4 is placed there. While rotating and translating, each wafer 2 is sequentially irradiated with the ion beam 10 to perform processing such as ion implantation.

In this case, the angle of incidence θ of the ion beam 10 with respect to the surface of the wafer 2 can be easily adjusted by adjusting the upright angle of the disk 4 using the disk overturning motor 32 in advance. This is because, as mentioned above, the disk 4 is moved by the disk overturning motor 32 to the center 0 of the disk 4 and the wafer 2 at the ion beam irradiation position.
As shown in FIG.
Even if the incident angle θ is changed by changing the upright angle of the disk 4 from a predetermined one (for example, the state shown by the solid line) (for example, the state shown by the two-dot chain line), the center of the ion beam 10 and the center of the wafer 2 at the ion beam irradiation position will be different. This is because it does not shift. Therefore, according to the apparatus of this embodiment, it is possible to meet demands such as implanting ions into the side walls of recesses carved on the surface of the wafer 2.

In addition, in the conventional example, the disk 4 and the mechanism section 22
Since the disk 4 and the mechanism section 22 are supported at one end, the rigidity is large and there is a risk of deflection.
Since it is supported by the wafer 2, the rigidity can be increased and deflection can be reduced, so each movement can be controlled with precision, and the wafer 2 can be processed with precision. .

Furthermore, in order to further improve the processing capacity, the disk 4 and its related mechanisms may be provided on both the left and right sides of the ion beam 10, as in the conventional example. In that case, if necessary, the disk 4 and the mechanism section 22 may be supported at one end.

〔Effect of the invention〕

As described above, according to the present invention, the angle of incidence of the ion beam on the wafer surface can be easily adjusted by the disk overturning mechanism that rotates the disk between a substantially horizontal state and an upright state.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view partially showing an ion processing apparatus according to an embodiment of the present invention. Figure 2 shows the line ■ in Figure 1.
- It is a longitudinal section along ■■. FIG. 3 is an enlarged view partially showing the relationship between the wafer and the ion beam in the apparatus shown in FIG. FIG. 4 is a schematic cross-sectional view partially showing an example of a conventional ion processing apparatus. FIG. 5 is a partial vertical sectional view showing details around the disk drive device of FIG. 4. FIG. FIG. 6 is an enlarged view partially showing the relationship between the wafer and the ion beam in the apparatus shown in FIG. 2... Wafer, 4... Disk, 6, 6a... Vacuum container, 10... Ion beam, 18... Disk rotation motor, 24... Disk translation motor, 32
...Motor for disc tipping, M...Center shaft.

Claims (1)

[Claims] (1) A rotary disk that can hold multiple wafers is placed in a vacuum container using a disk inversion mechanism to maintain a nearly horizontal state for attaching and removing wafers to the disk, and irradiates the wafers attached to the disk with an ion beam. In an ion processing apparatus configured to rotate between an upright state for processing, a disk inversion mechanism rotates the disk around a central axis passing approximately through the center of the disk and the center of the processing surface of the wafer at the ion beam irradiation position. An ion processing device characterized in that the disk is rotated between a substantially horizontal state and an upright state.