JPS63173377A - Semiconductor photoelectric conversion device - Google Patents
Semiconductor photoelectric conversion deviceInfo
- Publication number
- JPS63173377A JPS63173377A JP62003974A JP397487A JPS63173377A JP S63173377 A JPS63173377 A JP S63173377A JP 62003974 A JP62003974 A JP 62003974A JP 397487 A JP397487 A JP 397487A JP S63173377 A JPS63173377 A JP S63173377A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light receiving
- receiving surface
- recessed part
- recessed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 238000001514 detection method Methods 0.000 abstract description 10
- 239000011347 resin Substances 0.000 abstract description 6
- 229920005989 resin Polymers 0.000 abstract description 6
- 230000004304 visual acuity Effects 0.000 abstract 2
- 239000012466 permeate Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 1
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体光電変換装置に係り、特にインタ2ブ
タまだは反射型センサに関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a semiconductor photoelectric conversion device, and particularly to a reflective sensor.
しゃ断物がある場合は光が伝達されず、しゃ断物がない
場合は光が伝達されることを利用して物体の有無を検出
するインタラプタ、反射物がある場合は光の反射により
光が伝達されることを利用して物体の有無を検出する反
射型センサ等の半導体光電変換装置では小型化が進むと
ともに、分解能の向上が望まれている。An interrupter detects the presence or absence of an object by using the fact that if there is a blocking object, light is not transmitted, and if there is no blocking object, light is transmitted.If there is a reflective object, light is transmitted by reflection. Semiconductor photoelectric conversion devices such as reflective sensors that detect the presence or absence of an object by utilizing this phenomenon are becoming smaller and are desired to have improved resolution.
従来のインタラプタは、第3図に示すように各々、別に
樹脂成型された発光素子1と受光素子2とが外乱光を防
止するケース3に収納されている。In the conventional interrupter, as shown in FIG. 3, a light emitting element 1 and a light receiving element 2, which are separately molded with resin, are housed in a case 3 that prevents disturbance light.
ケース3にはスリット4が設けられ、このスリット4の
幅を変えることで、分解能を調整している。A slit 4 is provided in the case 3, and resolution is adjusted by changing the width of the slit 4.
このようなインタラプタは、それぞれが別々に樹脂成型
された発光素子1と受光素子2とがケース3に収納され
る構造であるため、部品数が多くまたスリットの位置を
あわせて固定するという工程が必要で組立が複雑となり
、高価になってしまうという問題があった。This type of interrupter has a structure in which the light emitting element 1 and the light receiving element 2, which are each molded separately from resin, are housed in a case 3, so there are many parts and the process of aligning and fixing the slits is required. There are problems in that the assembly is complicated and expensive.
またこの問題に対しては特開昭60−225485号公
報に記載されているように各々の素子を透光性樹脂で一
体封止する技術があるが物体を検出する範囲が広くなっ
て分解能が悪くなり精度が低下してしまい、分解能を高
めるだめには、スリソト全形成しなぐてはならない。In addition, to solve this problem, there is a technique that integrally seals each element with a transparent resin, as described in Japanese Patent Application Laid-open No. 60-225485, but the detection range of objects becomes wider and the resolution becomes lower. This results in a decrease in accuracy, and in order to improve the resolution, it is necessary to completely form the slit.
従来のインタラゲタは独立して形成される発光素子と受
光素子とを組立て、収納ケースに固定しているため、部
品数が多く、工程数も多くなり高価になる。また各素子
を一体封止したとしても分解能をあげるためにはスリッ
トを形成しなければならないという問題があった。Conventional interlagers involve assembling independently formed light-emitting elements and light-receiving elements and fixing them in a storage case, which increases the number of parts and processes, making them expensive. Furthermore, even if each element is integrally sealed, there is a problem in that slits must be formed in order to improve resolution.
本発明は、上記問題点を解決して安価で、且つ高精度な
半導体光電変換装置を提供することを目的とする。An object of the present invention is to solve the above problems and provide an inexpensive and highly accurate semiconductor photoelectric conversion device.
本発明は、発光素子と受光素子とが一体封止される半導
体光電変換装置において、受光面を被覆するバクケージ
部分に凹部が設けられ、この凹部底面は受光素子の受光
面よりも狭く、四部開口部は凹部底面より広く形成され
ることを特徴とする。The present invention provides a semiconductor photoelectric conversion device in which a light-emitting element and a light-receiving element are integrally sealed, in which a recess is provided in a back cage portion that covers a light-receiving surface, the bottom surface of the recess is narrower than the light-receiving surface of the light-receiving element, and a four-part opening is provided. The portion is characterized by being formed wider than the bottom surface of the recess.
〔作 用〕
本発明において受光素子を被覆するパッケージ部に設け
た凹部は凹部底面に入射した光は受光素子へ透過し、凹
部側面に入射した光は四部側面の傾斜によシ屈折させる
。この様に本発明による半導体光電変換装置では物体を
検出する幅が小さくない、従来、各素子を収納していた
ケースにスリットを設けていたものと同様に分解能が良
好になる。[Function] In the present invention, in the recess provided in the package portion covering the light-receiving element, light incident on the bottom surface of the recess is transmitted to the light-receiving element, and light incident on the side surfaces of the recess is refracted by the inclination of the four side surfaces. As described above, in the semiconductor photoelectric conversion device according to the present invention, the width for detecting an object is not small, and the resolution is as good as the conventional device in which a slit is provided in the case housing each element.
本発明の一実施例として第1図に示しだインタラプタに
ついて説明する。第1図(a)は本発明のインタラプタ
の側面図、第1図(b)は平面図である。As an embodiment of the present invention, the interrupter shown in FIG. 1 will be explained. FIG. 1(a) is a side view of the interrupter of the present invention, and FIG. 1(b) is a plan view.
例えばLEDのような発光素子11と、フォトダイオー
ドなどの受光素子12とが物体を検出する空間14をは
さんでそれぞれ相対向するように載置され、透光性樹脂
13で一体封止されている。For example, a light emitting element 11 such as an LED and a light receiving element 12 such as a photodiode are placed facing each other across a space 14 for detecting an object, and are integrally sealed with a translucent resin 13. There is.
従来は、検出空間14を隔てて対向する発光面側と受光
面側このケースにスリットが形成されていたが本発明で
は、発光素子11と受光素子12とを透光性樹脂によシ
一体封止したパッケージ13の受光面側に凹部15を設
けた。この凹部15は凹部底面16が受光素子12の受
光面よりも狭く凹部開口部17は凹部底面16よりも広
く形成する。このように形成したインタラプタは第1図
(C)に示すように発光素子11から発した光が物体の
検出空間14を通過して受光素子12側に入射する。受
光素子12側では、受光面よシ小さく形成された凹部1
5の底面16に入射した光は受光面へ透過し、それ以外
の凹部15の側面18に入射した光は側面18の傾斜に
より屈折し受光面へは入射しない。従って検出空間14
に存在した被検出物体に対する検出範囲は狭くなり良好
な分解能を得ることができる。Conventionally, a slit was formed in the case on the light-emitting surface side and the light-receiving surface side facing each other across the detection space 14, but in the present invention, the light-emitting element 11 and the light-receiving element 12 are integrally sealed with a translucent resin. A recess 15 is provided on the light-receiving surface side of the stopped package 13. The recess 15 is formed so that the recess bottom 16 is narrower than the light receiving surface of the light receiving element 12 and the recess opening 17 is wider than the recess bottom 16 . In the thus formed interrupter, as shown in FIG. 1(C), light emitted from the light emitting element 11 passes through the object detection space 14 and enters the light receiving element 12 side. On the light-receiving element 12 side, a recess 1 is formed smaller than the light-receiving surface.
The light incident on the bottom surface 16 of the recess 15 is transmitted to the light receiving surface, and the light incident on the other side surfaces 18 of the recessed portion 15 is refracted by the inclination of the side surfaces 18 and does not enter the light receiving surface. Therefore, the detection space 14
The detection range for the object to be detected that was present in the area is narrowed, and good resolution can be obtained.
パッケージの受光面側に形成する凹部の形状は本実施例
に限定されず、例えば第2図(a) 、 (b) 、
(C)に示したように凹部側面または底面が湾曲してい
ても良い。この場合、湾曲面によりレンズ効果を持たせ
ることができる。The shape of the recess formed on the light-receiving surface side of the package is not limited to this example, and may be, for example, as shown in FIGS. 2(a), (b),
As shown in (C), the side or bottom surface of the recess may be curved. In this case, the curved surface can provide a lens effect.
また、本実施例ではインタラプタについて説明しだが、
これに限らず、たとえば反射型センサの受光側に凹部を
設けることも可能である。Also, in this embodiment, the interrupter is explained, but
The present invention is not limited to this, and it is also possible to provide a recess on the light receiving side of the reflective sensor, for example.
以上説明したように本発明によれば発光素子と受光素子
とを一体封止したことにより部品数、組立工数が減少し
、コストダウンが実現できるとともに、発光素子と充光
素子とを一体封止するパッケージの受光素子の受光面側
に凹部を設けたことにより検出範囲を狭くすることがで
きて分解能が向上し高精度は半導体光電変換装置を提供
できる。As explained above, according to the present invention, by integrally sealing the light-emitting element and the light-receiving element, the number of parts and assembly man-hours can be reduced, reducing costs, and the light-emitting element and the light-charging element can be integrally sealed. By providing a concave portion on the light-receiving surface side of the light-receiving element of the package, the detection range can be narrowed, resolution can be improved, and a highly accurate semiconductor photoelectric conversion device can be provided.
第1図、第2図は本発明の実施例、第3図は従来技術の
一例である。1 and 2 show an embodiment of the present invention, and FIG. 3 shows an example of the prior art.
Claims (1)
光素子と、とれら発光素子及び受光素子を一体封止する
パッケージとからなる半導体光電変換装置において、前
記受光素子の受光面上の前記パッケージ部分に凹部が設
けられ、この凹部底面が少なくとも前記受光素子の受光
面より狭く形成され、前記凹部開口部は前記凹部底面よ
り応く形成されることを特徴とする半導体光電変換装置
。(1) In a semiconductor photoelectric conversion device comprising a light-emitting element, a light-receiving element that receives light from the light-emitting element, and a package that integrally seals the light-emitting element and the light-receiving element, the light-receiving surface of the light-receiving element is A semiconductor photoelectric conversion device characterized in that a recess is provided in the package portion, a bottom surface of the recess is formed to be narrower than at least a light receiving surface of the light receiving element, and an opening of the recess is formed to be wider than the bottom surface of the recess.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62003974A JPS63173377A (en) | 1987-01-13 | 1987-01-13 | Semiconductor photoelectric conversion device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62003974A JPS63173377A (en) | 1987-01-13 | 1987-01-13 | Semiconductor photoelectric conversion device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63173377A true JPS63173377A (en) | 1988-07-16 |
Family
ID=11572033
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62003974A Pending JPS63173377A (en) | 1987-01-13 | 1987-01-13 | Semiconductor photoelectric conversion device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63173377A (en) |
-
1987
- 1987-01-13 JP JP62003974A patent/JPS63173377A/en active Pending
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