JPS63169066A - Thin film transistor element - Google Patents

Thin film transistor element

Info

Publication number
JPS63169066A
JPS63169066A JP41587A JP41587A JPS63169066A JP S63169066 A JPS63169066 A JP S63169066A JP 41587 A JP41587 A JP 41587A JP 41587 A JP41587 A JP 41587A JP S63169066 A JPS63169066 A JP S63169066A
Authority
JP
Japan
Prior art keywords
gate
next
polycrystal silicon
oxide film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP41587A
Inventor
Junichi Owada
Masaru Takahata
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP41587A priority Critical patent/JPS63169066A/en
Publication of JPS63169066A publication Critical patent/JPS63169066A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Abstract

PURPOSE:To reduce resistance of a gate electrode so as to realize a high-speed operation, by disposing contact parts in at least two or more positions of a first gate and bringing wiring metals into contact with the gate. CONSTITUTION:Polycrystal silicon 1 is piled on a glass substrate and cut into island shapes. Next, a silicon oxide film serving as a gate insulating film, a polycrystal silicon film 2 serving as a gate electrode are serially piled thereon. Next, the polycrystal silicon film 2 and the silicon oxide film are removed exclusive of their gate portion, and the substrate is ion-implanted with P over the whole surface and annealed. Then, a silicon oxide film is piled thereon, and contact holes 4 are formed on the gate portion, and contact holes 5 are formed on source and drain portions. Further, Al is piled thereon by the use of a sputtering method or the like, and next the Al except for the Al existing on the source and drain portions 6 is removed. Hence, resistance of the gate electrode in a polycrystal silicon TFT manufactured on the glass substrate is apparently small, and hence a high-speed operation of the TFT can be realized.
JP41587A 1987-01-07 1987-01-07 Thin film transistor element Pending JPS63169066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP41587A JPS63169066A (en) 1987-01-07 1987-01-07 Thin film transistor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP41587A JPS63169066A (en) 1987-01-07 1987-01-07 Thin film transistor element

Publications (1)

Publication Number Publication Date
JPS63169066A true JPS63169066A (en) 1988-07-13

Family

ID=11473166

Family Applications (1)

Application Number Title Priority Date Filing Date
JP41587A Pending JPS63169066A (en) 1987-01-07 1987-01-07 Thin film transistor element

Country Status (1)

Country Link
JP (1) JPS63169066A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0449123A2 (en) * 1990-03-24 1991-10-02 Sony Corporation Liquid crystal display device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0449123A2 (en) * 1990-03-24 1991-10-02 Sony Corporation Liquid crystal display device
EP0723179A1 (en) * 1990-03-24 1996-07-24 Sony Corporation Liquid crystal display device

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