JPS63162558U - - Google Patents
Info
- Publication number
- JPS63162558U JPS63162558U JP5563987U JP5563987U JPS63162558U JP S63162558 U JPS63162558 U JP S63162558U JP 5563987 U JP5563987 U JP 5563987U JP 5563987 U JP5563987 U JP 5563987U JP S63162558 U JPS63162558 U JP S63162558U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- light extraction
- extraction surface
- covers
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000000605 extraction Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 2
Description
第１図は一般的な高出力型半導体レーザ装置を
示す模式図、第２図は半導体レーザの寿命試験結
果を示す模式図である。
１……半導体レーザ素子、２ａ，２ｂ……第１
、第２光取出面、３，４……第１、第２コーテイ
ング膜。
FIG. 1 is a schematic diagram showing a general high-power semiconductor laser device, and FIG. 2 is a schematic diagram showing the results of a life test of the semiconductor laser. 1... Semiconductor laser element, 2a, 2b... First
, second light extraction surface, 3, 4...first and second coating films.
Claims (1)
イング膜として少なくともＡｌＮ膜を用いること
を特徴とする半導体レーザ装置。 A semiconductor laser device characterized in that at least an AlN film is used as a coating film that covers a light extraction surface of a semiconductor laser element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5563987U JPH0621265Y2 (en) | 1987-04-13 | 1987-04-13 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5563987U JPH0621265Y2 (en) | 1987-04-13 | 1987-04-13 | Semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63162558U true JPS63162558U (en) | 1988-10-24 |
| JPH0621265Y2 JPH0621265Y2 (en) | 1994-06-01 |
Family
ID=30883723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5563987U Expired - Lifetime JPH0621265Y2 (en) | 1987-04-13 | 1987-04-13 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0621265Y2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03209895A (en) * | 1990-01-12 | 1991-09-12 | Alps Electric Co Ltd | Semiconductor laser |
| JP2001068780A (en) * | 1999-08-30 | 2001-03-16 | Fuji Photo Film Co Ltd | Semiconductor laser element and manufacture thereof |
| JP2007027260A (en) * | 2005-07-13 | 2007-02-01 | Toshiba Corp | Semiconductor element and its fabrication process |
| US8094696B2 (en) | 2009-03-25 | 2012-01-10 | Mitsubishi Electric Corporation | Semiconductor laser device |
-
1987
- 1987-04-13 JP JP5563987U patent/JPH0621265Y2/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03209895A (en) * | 1990-01-12 | 1991-09-12 | Alps Electric Co Ltd | Semiconductor laser |
| JP2001068780A (en) * | 1999-08-30 | 2001-03-16 | Fuji Photo Film Co Ltd | Semiconductor laser element and manufacture thereof |
| JP2007027260A (en) * | 2005-07-13 | 2007-02-01 | Toshiba Corp | Semiconductor element and its fabrication process |
| US8094696B2 (en) | 2009-03-25 | 2012-01-10 | Mitsubishi Electric Corporation | Semiconductor laser device |
| US8233514B2 (en) | 2009-03-25 | 2012-07-31 | Mitsubishi Electric Corporation | Semiconductor laser device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0621265Y2 (en) | 1994-06-01 |