JPS63159298A - Continuous production of silicon carbide whisker and apparatus therefor - Google Patents

Abstract

PURPOSE:To continuously produce the titled whisker having high purity and excellent linearity, by transferring a silicon-containing raw material, carbon- containing raw material and reaction catalyst, heating them in a non-oxidizing atmosphere and depositing a low boiling point component by forced cooling the component in a cooling zone. CONSTITUTION:A reaction raw material consisting of silicon-containing raw material, carbon-containing raw material and reaction catalyst is charged into a vessel 42 and the raw material charged vessel is inserted into a reaction furnace from a inlet door 16 through a insert zone 11 under a non-oxidizing gas atmosphere and fed to a heat zone 13 via middle door 17 through a preheating zone 12 under a non-oxidizing gas atmosphere and heated at the prescribed temperature to provide the aimed SiC whisker. Then the vessel 42 is passed through the middle door 17 and fed to a cooling zone 14 wherein a cooling inert gas is introduced from a inlet tubes 18 and 19 and subjected to forced cooling to deposit the low boiling point component on a furnace wall and the deposited component is collected.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for continuously producing silicon carbide whiskers and an apparatus therefor, and specifically relates to a method for continuously producing silicon carbide whiskers, and more specifically, to a method for continuously producing silicon carbide whiskers. The present invention relates to a method for producing silicon carbide whisker crystals in a continuous manner with high yield, and an apparatus therefor.

Silicon carbide whiskers are lightweight, have high strength, and have high elasticity, and have recently been expected to be used in a variety of ways as reinforcing materials for composite materials.

Conventionally, methods for producing such silicon carbide whiskers include a gas phase synthesis method in which one or both of a carbon-containing raw material and a silicon-containing raw material are supplied in a gas phase to a predetermined high-temperature reaction zone in a reactor; It is broadly divided into solid-phase synthesis methods that use solids as raw materials containing silicon and silicon-containing raw materials. The gas phase synthesis method is described, for example, in Japanese Patent Publication No. 50-18480 and Japanese Patent Publication No. 50-18480.
2-28757, Japanese Patent Publication No. 52-28759, etc., and the solid phase synthesis method is described in, for example, JP-A-58-20799, JP-A-58-45918.
JP-A-58-145700, etc.

The conventional gas phase synthesis method described above is advantageous in obtaining needle-shaped crystals, but on the other hand, the utilization rate of the gas phase raw material is extremely low, and the gas phase raw material is decomposed in the reactor. It is unsuitable for mass production of silicon carbide whiskers because it has problems such as the reactor being contaminated by these decomposed products and furthermore, these decomposed products are mixed into the generated silicon carbide whiskers. On the other hand, according to the conventional solid-phase synthesis method, silicon carbide is directly produced by mixing raw material powder containing silicon and raw material powder containing carbon, heating the mixture, and directly producing silicon carbide mainly through a solid-phase reaction between these powders. As a result, it is difficult to obtain silicon carbide whiskers with excellent linearity. It is not easy to separate and remove silicon carbide.

Therefore, the present inventors have already proposed a method in which a carbon powder is used as the carbon-containing raw material and a molded body having a predetermined shape containing silicon dioxide is used as the silicon-containing raw material. According to this method, silicon as a reaction residue of the compact does not mix with the silicon carbide whiskers produced, and therefore, the silicon carbide whiskers produced contain silicon and/or silicon dioxide, which are by-products during the production. Only a small amount is mixed in. Further, carbon as a reaction residue can be easily removed by burning the reaction product in the atmosphere after the reaction is completed, so that highly pure silicon carbide whiskers can be obtained.

However, the present inventors have found that when silicon carbide whiskers are continuously produced by the above method, the reaction vessel glass filled with furnace materials and reaction raw materials (IJ), potassium, magnesium, calcium, sulfur, iron, silicon, etc. It has been discovered that vapors of low boiling point components, including elements, are generated in the reactor and can clog the exhaust gas pipe system of the reactor, hindering the continuous production of silicon carbide whiskers over a long period of time. As a result of intensive research to solve this problem, we installed a heating zone in the reactor to uniformly heat the reaction raw materials in a non-oxidizing gas atmosphere, and a cooling zone downstream of the heating zone to heat the reaction materials in a non-oxidizing gas atmosphere. We discovered that stable continuous operation over a long period of time was possible by forcibly cooling the atmosphere in the furnace, precipitating the vapor of low-boiling components that was produced as a by-product during the heating reaction, and collecting it. This led to the invention.

Furthermore, as a result of repeated research on the influence of the carbon-containing raw material on the silicon carbide whiskers produced in the above method, the present inventors found that by using carbon black having predetermined properties as the carbon-containing raw material, in particular,
The present invention was developed based on the discovery that acicular silicon carbide whisker crystals with excellent linearity and homogeneity can be obtained in high yield.

The continuous manufacturing method of silicon carbide whiskers according to the present invention includes:
In a method of generating silicon carbide whiskers by transferring a silicon-containing raw material, a carbon-containing raw material, and a reaction catalyst in a reactor and heating them to a predetermined temperature in a non-oxidizing gas atmosphere, It is characterized by forcibly cooling the vapor of low boiling point components to precipitate and collect them in the provided cooling zone.

In the method of the present invention, as the silicon-containing raw material, it is preferable to use a molded body containing silicon dioxide, as described later, but a powdered silicon-containing raw material can also be used.

The silicon-containing raw materials used in the method of the present invention include:
For example, silicon, silica powder, powdered silica gel, various amorphous silicas, precipitated silica, clay, etc. can be mentioned, but preferably it contains silicon dioxide, and especially silicon carbide in good yield. so that whiskers can be manufactured,
It is preferable to contain silicon dioxide in an amount of 30% by weight or more.

In the present invention, a molded body made of such a silicon-containing raw material is formed by molding this raw material by an appropriate means such as extrusion molding, press molding, granulation, etc., and firing it to form a plate, rod, etc.
A three-dimensional solid that has the shape of a tube, cylinder, sphere, line, or a combination of these.

In general, in a method for producing silicon carbide whiskers by heating and reacting a solid silicon-containing raw material and a carbon-containing raw material, these raw materials are filled into a reaction vessel, and a reactor equipped with a heating means, such as a tray, is used. A pusher set is inserted into an electric furnace and heated to a predetermined temperature. In the method of the present invention, the molded body made of the silicon-containing raw material is made of carbon powder, such as a tubular or box-shaped container. It can also serve as a reaction vessel for filling.

In this way, when a solid silicon-containing raw material is used as a molded body, the silicon compound from this molded body selectively vaporizes and reacts with carbon to produce silicon carbide whiskers. Even if a material with a low content of silicon or silicon oxide is used, a highly pure silicon carbide whisker containing impurities of several percent or less can be obtained. Furthermore, the silicon carbide whiskers produced are very easy to separate from the compact.

As the carbon-containing raw material, it is preferable to use powdered carbon, and carbon black, powdered activated carbon, etc. can be used. However, these carbon powders are fine powders, and the more bulky they are, the higher the reactivity is. is preferred. Moreover, as will be described later, it is preferable to use carbon black having predetermined properties. That is, in the present invention, carbon black has a BET specific surface area of 10
It is particularly preferable to use carbon black having an average particle diameter of 0ra2/g or more, an average particle diameter of 35 nm or less, and a bulk density of 0.06 to 0.2 g/cm'.

In the method of the present invention, preferably, the silicon dioxide-containing raw material and the carbon powder are placed under a non-oxidizing gas cloud,
For example, silicon carbide whiskers are obtained by heating to a predetermined temperature in a limited space such as an electric furnace.

In the method of the present invention, silicon carbide whiskers are mainly produced by the following reaction, taking as an example the case where hydrogen gas is used as the non-oxidizing gas. However, the present invention is not limited in any way by the reaction mechanism.

C(s) +2! h(g) '-' CH4(g)
(IISiOz(s) +CHn
(g) -SiO(g) +CO(g) +2Hz(g
) (21SiO(g) +2C(s) −= 5i
C(s) +CO(g) (31 That is, first, hydrogen gas and carbon powder react to generate methane gas, which is then reacted on the surface of the silicon dioxide-containing compact to generate -silicon oxide gas by reaction (2). Next, the reaction between this silicon oxide gas and carbon (3
), silicon carbide is produced. Therefore, the overall reaction equation is: 5iOz(s) +3C(s) −” 5iC(s)
+2CO(g) (It will be expressed as J.

In the method of the present invention, the silicon dioxide-containing compact and carbon powder are usually filled into a suitable reaction vessel and heated in a hydrogen atmosphere in a reaction furnace. For example, plate-shaped silicon dioxide-containing molded bodies are placed in parallel at intervals in a reaction vessel, and the gaps are filled with carbon powder. The reaction vessel is
For example, it may be made of alumina or may be of high purity carbon type.

In the reaction formula (4), hydrogen does not participate in the production of silicon carbide, but since hydrogen is essential for the carbon methane gasification reaction (1), carbon has high reactivity with hydrogen gas. This is required. On the other hand, reaction (2) is
Proceeds almost uniformly throughout the carbon-filled space,
As a result, silicon carbide whiskers form throughout this space, while forming very little outside of this space. Therefore, in addition to reaction conditions such as reaction temperature, atmospheric gas, and catalyst, it is important to maintain a predetermined concentration of silicon monoxide produced from the compact in the carbon-filled reaction space. It is necessary to have a cohesive structure with voids.

As described above, in the above reaction, hydrogen gas makes an important contribution to the generation of silicon carbide whiskers, and according to the present invention, the hydrogen gas in the atmosphere in the reaction zone is always reduced by 70%.
By doing so, the yield of silicon carbide whiskers can be significantly increased, and the acicularity thereof can be significantly improved. In order to make the atmosphere in the reaction zone always contain 70% or more hydrogen gas, for example, a large amount of hydrogen is passed through the reactor, and as mentioned above, carbon monoxide is generated as a by-product. prevent the reduction in hydrogen concentration associated with When the hydrogen gas concentration is less than 70%, not only the yield of silicon carbide whiskers is significantly reduced, but also the length is short, and the amount of silicon carbide whiskers produced in irregular shapes such as powder and bent shapes increases. .

In addition, when the reaction furnace is composed of a plurality of zones including a heating zone in which the silicon dioxide molded body and the solid carbon-containing raw material are heated and reacted, according to the present invention, the limited space is defined as the heating zone The atmosphere in at least the heating zone of the reactor may be maintained at an atmosphere with a hydrogen concentration of 70% or more.

The three physical properties of carbon black, BET specific surface area, particle size, and bulk density, are not completely independent physical properties from each other;
It defines the reactivity with hydrogen gas and the agglomerated structure while being related to each other. However, among these, the BET specific surface area is an amount that indicates the amount of contact between carbon black and hydrogen gas, and is mainly an index of the reaction with gas. On the other hand, the average particle size and bulk density are mainly indicators of the agglomerated structure of carbon black. According to the method of the present invention, preferably a BET specific surface area of 100 m2/g or more,
Average particle diameter of 35 nm or less, and bulk density of 0.06 to 0.2
When using carbon black which is g/cm',
Such carbon black has high reactivity with hydrogen gas, and in order to meet the above conditions, it produces highly acicular silicon carbide iscar without producing irregularly shaped by-products such as powder, granules, and bent shapes. It may be possible to do so.

In the production of silicon carbide whiskers by the method of the invention, preferably a reaction catalyst is used.

As the reaction catalyst, iron, nickel, cobalt, or compounds thereof, such as oxides, nitrates, carbonates, sulfates, etc. are used. These compounds are added to and mixed with the carbon-containing raw material powder in the form of powder, aqueous solution, or other appropriate form. These catalysts have the effect of accelerating the production of linear, high-purity silicon carbide whiskers and, as a result, suppressing undesirable reactions that occur concurrently.

In the method of the present invention, the temperature at which the silicon dioxide-containing molded body and the solid carbon raw material are heated in an atmosphere containing hydrogen is 1
The temperature is preferably 300°C or higher, particularly preferably 1400°C or higher. This is because, at a temperature lower than 1300° C., silicon carbide whisker formation is extremely slow, which is practically undesirable. On the other hand, when the temperature is too high, the reaction conditions are too extreme, the diameter of the whiskers increases, and disturbances such as branching and bending occur in the whiskers.

Therefore, the reaction temperature is usually 1700°C or lower. Further, the heating time is not particularly limited, but is usually suitable for 0.5 to 30 hours.

If the reaction time is too short, a large amount of unreacted raw materials will remain; on the other hand, if the reaction is too long, the yield of silicon carbide whiskers will increase only slightly. , because there is no advantage.

As mentioned above, in the method of the present invention, the reaction raw materials are heated to a high temperature, so during this heating reaction, sodium, potassium, magnesium, calcium, and sulfur are removed from the furnace material and the reaction vessel filled with the reaction raw materials. In order to prevent the generation of steam of low-boiling components containing elements such as iron, silicon, etc. and clogging the exhaust gas pipe system of the reactor, after heating the above reaction raw materials, the reaction products and the atmosphere are forced. By cooling, the vapor of the low boiling point component is forcibly cooled, deposited on the furnace wall, and collected. Therefore, according to the method of the present invention, the vapor of the low boiling point component does not precipitate and adhere in the exhaust gas pipe system, so that silicon carbide whiskers can be continuously produced stably.

Thereafter, if necessary, the reaction product is allowed to cool, and preferably, excess carbon contained in the reaction product is oxidized and incinerated to usually obtain flocculent silicon carbide whiskers.

The continuous production device for silicon carbide whiskers according to the present invention includes:
In an apparatus for generating silicon carbide whiskers by heating a reaction raw material consisting of a silicon-containing raw material, a carbon-containing raw material, and a reaction catalyst to a predetermined reaction temperature in a non-oxidizing gas atmosphere in a reactor, the above-mentioned A heating zone is formed to heat the reaction raw materials to a predetermined reaction temperature, and a cooling zone is then formed to forcibly cool the reaction products and the atmosphere.In this cooling zone, the vapor of low boiling point components is forcibly cooled. It is characterized by being cooled, precipitated, and collected.

Hereinafter, the apparatus according to the present invention will be specifically explained based on the drawings. FIG. 1 is a front sectional view of an apparatus according to the invention, and FIG. 2 is a plan sectional view of the apparatus shown in FIG.

The reactor 10 is formed into a rectangular tube shape, and includes an insertion zone 1) which is an end portion for inserting the reaction raw material into the furnace, a preheating zone 12 for preheating the reaction raw material to a predetermined temperature, and a preheating zone 12 for preheating the reaction raw material to a predetermined temperature. It has a heating zone 13 for heating the reaction product to a temperature of 50%, a cooling zone 14 for cooling the reaction product and atmospheric gas after the reaction, and a take-out zone 15 for taking out the cooled reaction product from the furnace.

An inlet door 16 is provided at the entrance of the insertion zone 1), and an inner door 17 is provided between the insertion zone and the preheating zone 12 so as to be openable and closable and to cross the furnace cross section. The tropical atmosphere is blocked out as needed. Similarly, an inner door 18 is provided between the cooling zone 14 and the take-out zone 15 so as to be openable and closable and to cross the furnace cross section in order to shut off the respective atmospheres as necessary.

The insertion zone is equipped with an inert gas introduction pipe 27 and an exhaust pipe 26, and the air carried in together with the reaction materials inserted into the preheating zone is replaced with, for example, nitrogen, and the reaction materials are placed in an inert gas atmosphere. .

Next, non-oxidizing gas, for example, hydrogen introduction pipes 21 and 28 are arranged on the introduction side of the pre-heating zone 12, and hydrogen gas is introduced into the pre-heating zone so that it flows in the same direction as the transfer direction of the reaction raw materials. and supplied to the heating zone.

In the preheating zone and the heating zone, an electric heater 4 is provided as a heating means for preheating or heating the reaction raw materials including the silicon-containing raw material, carbon powder, and reaction catalyst to predetermined temperatures, respectively.
1 is attached to the furnace wall.

Further, the cooling zone 14 is provided with cooling inert gas introduction pipes 29 and 31 on its introduction side and discharge side, respectively, and cooling inert gas discharge pipes 25 and 30 on its discharge side. Then, a cooling inert gas is introduced into the cooling zone.
The atmospheric gas and the reaction product are forcibly cooled, and the vapor of the low boiling point component contained in the atmospheric gas is deposited and deposited on the furnace wall. If necessary, a cooler (not shown), such as a cooling plate, is replaceably installed along the furnace wall in the cooling zone in order to increase the efficiency of cooling and precipitation of low-boiling point component vapor. Cooling water may be passed through the cooling plate to cool it to a predetermined temperature.

In the device according to the invention, preferably the cooling zone 14
is formed to have a larger inner furnace cross-sectional area and larger inner furnace volume than the heating zone 13, and in the cooling zone,
Even if low boiling point components deposit and adhere to the furnace walls and cooler, the reactor can be transported through the reactor without any problems.
Make sure you have enough space. This cooling zone is replaceable in the reactor in order to remove low-boiling components deposited on the furnace walls and cooler after a certain period of operation, and to improve the efficiency of continuous production. However, instead of making the furnace body itself replaceable, the furnace wall has a double structure consisting of an outer furnace wall and an inner furnace wall, and the inner furnace wall is configured to be replaceable with respect to the furnace body. You can also do that.

The discharge side end of the cooling zone is connected to the take-out zone 15. The take-out zone is also provided with an inert gas introduction pipe 32 and a discharge pipe 33 on the inlet side and the discharge side, respectively, and the reaction product is placed under an inert gas atmosphere in this take-out zone, and is discharged as necessary. After further cooling, it is taken out from the reactor.

Next, continuous production of silicon carbide whiskers using such an apparatus will be explained.

The reaction raw materials consisting of a silicon-containing raw material, a carbon-containing raw material, and a reaction catalyst are filled into a suitable reaction vessel 42 or sagger, for example, a ceramic vessel made of mullite, alumina, etc., or a graphite vessel, and inserted into the reactor. They are inserted sequentially starting from 1) and placed under an inert gas atmosphere. Next, the reaction raw material transferred from the insertion zone to the preheating zone 12 is preheated to a predetermined temperature in the preheating zone, and then in the heating zone 13, a non-oxidizing gas is passed through the heating zone 13 in parallel with the transfer direction of the reaction raw material. For example, it is heated to a predetermined reaction temperature in an atmosphere of hydrogen gas to produce silicon carbide whiskers.

Regarding the reaction temperature and reaction time in the above heating zone,
Already explained earlier. The reaction raw materials filled in the reaction vessel are sequentially and intermittently inserted into the reactor from the insertion zone so as to stay in the heating zone for a predetermined period of time.

As described above, the cooling zone 14 is provided with the cooling inert gas introduction pipes 29 and 31 and the gas discharge pipes 25 and 30, and the reaction raw materials are heated to a predetermined level in the heating zone as described above. After silicon carbide whiskers are generated by heating to the reaction temperature, they are forcibly cooled by inert gas in this cooling zone, and the vapor of low boiling point components produced by the heating reaction is deposited on the furnace wall and collected, thus This prevents vapors of low boiling point components from depositing and adhering in the gas exhaust pipe system.

As mentioned above, after the reaction materials are heated, the hydrogen supplied to the pre-heating zone and the heating zone, together with the inert gas introduced into the cooling zone and the non-condensable by-product gas that is not removed in the cooling zone, flows into the cooling zone. The gas is discharged from the reactor through the gas discharge pipes 25 and 30 on the discharge side.

The silicon carbide whiskers obtained in the above manner are
The reaction product is transferred to the take-out zone 15 via the take-out side of the cooling zone, and the reaction product taken out from the take-out zone is then oxidized and incinerated in a Matsufuru furnace to oxidize and incinerate the unreacted carbon raw material, thus converting silicon carbide whiskers into silicon carbide whiskers. Obtainable.

Effects of the Invention As described above, according to the method and apparatus of the present invention, the vapor of the low boiling point component generated by heating the reaction raw material in the heating zone is forcibly cooled in the cooling zone, precipitated, and collected. This prevents these vapors from adhering to the gas exhaust pipe system. Therefore, according to the present invention, silicon carbide whiskers can be produced continuously and stably over a long period of time.

Furthermore, according to the present invention, highly acicular silicon carbide whisker crystals can be produced in high yield by heating a silicon dioxide-containing molded body and carbon black having predetermined physical properties in an atmosphere of non-oxidizing gas, particularly hydrogen gas. In addition to being able to be manufactured at high speed, there is no need to use reaction accelerators made of metal halides such as sodium chloride, so there is no need for these to adhere to the reactor walls or generate corrosive gases that corrode the reactor. .

Further, according to the method of the present invention, there is no need to use a reaction accelerator to secure a reaction space, and therefore, when silicon carbide whiskers are installed, there is no need to deposit and adhere the silicon carbide whiskers to the reactor wall. Since no corrosive gas is generated, the reactor will not be damaged.

Large Spotting The present invention will be explained below by giving Examples and Comparative Examples, but the present invention is not limited to these Examples in any way.

As shown in the figure as the example manufacturing apparatus, a heating furnace with a tray pusher set equipped with a heating zone and a cooling zone is used, hydrogen gas is caused to flow in the reaction furnace in parallel with the direction of transfer of the reaction raw materials,
The temperature in the heating zone was set at 1600° C., and cooling nitrogen gas was fed into the cooling zone to continuously produce silicon carbide whiskers.

That is, a silicon-containing raw material and a specific surface area of 250 m2 are placed in a carbon pot.
/g, an average particle diameter of 14 nm, a bulk density of 190 g/cm', and a small amount of nickel oxide as a catalyst, and heated the above reaction raw material in a heating zone to a temperature of 1600 ° C. in an atmosphere of 95% hydrogen 15% nitrogen for 2 hours. After this, continuous operation was performed for one month under conditions of cooling with nitrogen gas in a cooling zone.

During this period, when the inside of the furnace was observed through a viewing window installed in the furnace wall of the cooling zone, precipitation of low-boiling components was observed on the furnace wall of the cooling zone, but almost no precipitation was observed on the exhaust gas pipe system. We were able to continue stable continuous operation.

Furthermore, the silicon carbide whiskers thus obtained had a hydrofluoric acid soluble content of 2% or less, and were acicular in shape, with a high acicular ratio.

Comparative Example Silicon carbide whiskers were continuously produced in the same manner as in the above example, except that a cooling zone was provided in the reactor and the reaction products and atmosphere were not forcedly cooled. Just one hour after the start of operation, the exhaust gas pipe system began to become clogged due to deposits of vapor containing low boiling point components, and the pressure inside the furnace rose, so a backup exhaust gas pipe system had to be used. . Moreover, even if such a spare exhaust gas pipe system was used in combination, they also tended to become clogged two days later, making it difficult to ensure safe operation in continuous operation.

[Brief explanation of the drawing]

FIG. 1 is a front sectional view showing an embodiment of the device according to the present invention;
FIG. 2 is a sectional plan view of the device shown in FIG. 1. DESCRIPTION OF SYMBOLS 10...Reactor, 1)...Insertion zone, 12...Pre-preparation zone, 13...Heating zone, 14...Cooling zone, 15...
Take-out zone, 26... Inert gas discharge pipe, 21... Hydrogen introduction pipe, 25... Inert gas discharge pipe for cooling, 27...
・Inert gas introduction pipe, 28...Hydrogen introduction pipe, 29...
- Inert gas introduction pipe for cooling, 25... Inert gas discharge pipe for cooling, 31... Inert gas introduction pipe for cooling, 42.
...Reaction container. Patent applicant: Kobe Steel, Ltd. Kanebo Co., Ltd.

Claims (10)

[Claims] (1) In a method of generating silicon carbide whiskers by transferring a silicon-containing raw material, a carbon-containing raw material, and a reaction catalyst in a reactor and heating them to a predetermined temperature in a non-oxidizing gas atmosphere, the outlet of the reactor A method for continuous production of silicon carbide whiskers, characterized by forcibly cooling, precipitating and collecting vapor of low boiling point components in a cooling zone provided on the side. (2) Carbon-containing raw material has a BET specific surface area of 100 m^2/g
above, average particle diameter of 35 nm or less, and bulk density of 0.06 to
A method for continuously producing silicon carbide whiskers, characterized in that the carbon black is 0.2 g/cm^3. (3) A method for continuously producing silicon carbide whiskers according to claim 1 or 2, characterized in that a catalyst is mixed in the carbon-containing raw material. (4) The method for producing silicon carbide whiskers according to claim 3, wherein the catalyst is iron, nickel, cobalt, or a compound thereof. (5) The method for continuously producing silicon carbide whiskers according to claim 1, wherein the reaction temperature is 1400 to 1700°C. (6) The method for continuously producing silicon carbide whiskers according to claim 1, wherein the non-oxidizing gas is hydrogen with a concentration of 70% or more. (7) In an apparatus for producing silicon carbide whiskers by heating a reaction raw material consisting of a silicon-containing raw material, a carbon-containing raw material, and a reaction catalyst to a predetermined reaction temperature in a non-oxidizing gas atmosphere in a reactor, A heating zone for heating the reaction raw materials to a predetermined reaction temperature and a cooling zone for forcibly cooling the reaction products and the atmosphere are formed in the cooling zone. A continuous production device for silicon carbide whiskers, which is characterized by forcibly cooling, precipitation, and collection. (8) A series of silicon carbide whiskers according to claim 7, characterized in that a cooling inert gas pipe system for introducing and discharging a cooling inert gas is connected to the cooling zone. Manufacturing equipment. (9) The continuous production apparatus for silicon carbide whiskers according to claim 7, wherein the non-oxidizing gas is passed through the reactor in the direction of transfer of the reaction raw materials. (10) The continuous production apparatus for silicon carbide whiskers according to claim 7, wherein the non-oxidizing gas is hydrogen with a concentration of 70% or more.