JPS63154072A - Semiconductor motor - Google Patents

Abstract

PURPOSE:To increase torque by turning a rotor by Coulomb force acquired by excellently operating charges in a semiconductor and charges present in a derivative. CONSTITUTION:An electronic network including a control circuit and a stator 2 are formed to a semiconductor integrated circuit element 1, and a rotor 3 is mounted through a gap 6. With the rotor 3 and the stator 2, N channels Nr, Ns are isolated by P channels Pr, Ps, and electrodes 4 are set up to the respective channels Ns, Ps in the stator 2 and fixed voltage Er1, Er2 are applied. When voltage having polarity shown in the graph is applied at that time, donor electrons in the channels Ns in the stator 2 are pushed away by Coulomb force to the gap 6 side, repulsion is generated with donor electrons in the channels Nr in the rotor 3, and repulsion is generated between the P channels Ps, Pr and attraction among the P channels Ps, Pr and N channels Ns, Nr, thus generating moving force.

Description

[Detailed Description of the Invention] [Industrial Application Field] Since the present invention is a motor that rotates by skillfully manipulating charges in a semiconductor or a dielectric, the electronic circuitry including the control circuit and the stator are connected to each other. By using the same semiconductor integrated circuit element, the structure can be simplified and the size can be reduced in principle compared to an electromagnetic motor. In addition to electronic clock motors and servo motors for controlling angles of several hundredths of a degree,
It is used in the field of suppressing electromagnetic noise and magnetic fields. Further, there are many unknown applications that can be obtained by providing the present invention due to new principles.

[Summary of the Invention] The present invention relates to a motor having a rotor and a stator in which a semiconductor or a dielectric rotates or is rotated by Coulomb force obtained by skillfully manipulating charges in a semiconductor or a dielectric. The control circuit that supports this basic configuration,
Although the rotor bearing is comprised of a structural configuration and other detailed invention techniques, one object of the present invention is to provide a movable and braking method.

[Prior Art] This is an electric field motor as opposed to a magnetic field motor, and although it is similar to an electrostatic motor, it actively uses semiconductors and is in principle an unprecedented motor.

[Problems to be Solved by the Invention] a) In a watch equipped with an electromagnetic motor, fluctuations in the load occur due to external magnetic fields, resulting in a decrease in timekeeping accuracy.

Electromagnetic servo motors also have negative effects on angle and response speed due to external magnetic fields.

b) When a permanent magnet is used in the rotor of an electromagnetic motor,
As the number of poles of the rotor increases, the magnitude of the torque decreases as the magnetic fields intersect with each other.

C) Electromagnetic motors are not suitable for forced braking and are difficult to stop suddenly.

d) Electromagnetic motors require coils and appropriate connections to electronic circuitry, which limits miniaturization and increases production costs.

e) With electromagnetic motors and conventional electrostatic motors, it is almost impossible to integrate them with semiconductor integrated circuit elements, and it is impossible to systemize them with elements.

f) In conventional electrostatic motors, the function of each channel (pole) boundary structure of the rotor and stator is unclear, and no suitable proposal has been made.

[Means for solving the problem] a) In the semiconductor rotor and semiconductor stator, N
Separate the channel and N channel by the P channel.

In the hLJ electric rotor and dielectric stator, the dielectrics are separated by an intrinsic semiconductor.

c) Part of the f-conductor integrated circuit element is used as a stator.

Alternatively, part of the stator may be made of semiconductor.

d) Torque in the opposite direction to the rotational direction is generated by bias voltage control to perform forced braking.

[Effect] ■This is an effect caused by Coulomb force and is not affected by external magnetic fields.

■Torque will be increased by both the rotor and stator.

■Semiconductor integrated circuits and stator electrodes can be formed simultaneously using semiconductor integrated circuit formation technology.

■If the stator is made of a semiconductor, control of the charge in the channel (poles) will be significantly easier.

■In addition to the reduced weight of the rotor and smaller moment of inertia, reverse bias forced braking becomes sharper.

[Example] Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is an explanatory diagram of a method for moving and braking a semiconductor motor when the stator and rotor channels are made of semiconductors according to an embodiment of the present invention;
(b) shows a control voltage waveform diagram, and figure (C) shows a change in channel counter electrode area as the rotor rotates.
d) is a model diagram for explaining movement and braking of the semiconductor motor. 1 is a semiconductor integrated circuit element forming an electronic circuit network including a motor control circuit. Reference numeral 2 denotes a stator, which is a part of the semiconductor integrated circuit element 1 . The stator 2 consists of a stator n-channel Ps and a stator n-channel Ns. 3 is a rotor consisting of a rotor n-channel Pr and a rotor n-channel Nr. 4 is an electrode and stator 2
The Ns side electrode 4 and the Ps side electrode 4 are electrically separated, and the Ns side electrode 4 and the Ps side electrode 4 of
The voltage of Erl is applied to the s-side electrode 4, and the voltage of Er2 is applied to the Ps-side electrode 4.
Apply voltage. 6 is a gap, and the stator 2 and rotor 3 have a structure in which they do not come into direct contact with each other. In such a structural configuration, the voltage shown in Figure (a) is applied to the Ns side electrode 4, and the voltage shown in Figure (b) is applied to the Ps side electrode 4. The manner in which this voltage is applied, that is, the waveform, corresponds to the change in the area of the opposite electrode shown in FIG. In explanatory diagram (d), Nr, Ns, Pr
The figure shows a point in time when the area of the opposite electrode between PS and PS is Mat. At this point, the minus (-) voltage waveform in the figure (a) is applied to the Ns side electrode 4, and the donor electrons in Ns of the stator 2 are transferred to the gap 6. Push it to the side with Coulomb force and reduce the N of rotor 3.
A repulsive force is generated between the donor electrons in r and the Ps side electrode 4 (b
) The plus (+) of the voltage waveform in the figure is added, and the stator 2
The acceptor plate in Ps of is pushed toward the gap 6 side by Coulomb force, and a repulsive force is generated between the acceptor hole of the width Pr of the rotor 3 and rotates in the direction of arrow 7. An attractive force is generated, and rotor 3
An attractive force is generated between Pr and Ns of the stator 2, increasing the movable force.The way to apply this voltage is until the area of the opposite electrode reaches Win.
In other words, the voltage of all electrodes 4 is maintained until the area of the opposing electrodes between Nr and Ns and Pr and Ps reaches Wax from the old n point until the rotation is done by θ degrees as shown in the figures (C) and (d). 02 in Fig. (C) by eliminating the Coulomb force acting on the stator 2 and rotor 3 and inertial rotation of the rotor 3.
Rotate until. The repetition up to this point shows the movement in (a) section A on the diagram.

Next, in (C) the point in time when θ is 4, that is, Nr, Ns, P
The voltage of all the electrodes 4 is made zero during the period from the time when the opposing electrode area between r and Ps is Wax to in, and no repulsive force is applied to the stator 2 and rotor 3 at the time of θ5, that is, N rl
! :Ns, the area of opposing electrodes between Pr and Ps is from Win to Ma
A negative (-) voltage is applied to the Ns side electrode 4 during the time period when the time period increases to t, and the donor electrons in the Ns of the stator 2
A repulsive force is generated between donor electrons in the Nr of the rotor 3 pushed to the side by Coulomb force, and a positive (+) force is applied to the Ps side electrode 4, and a repulsive force is generated between the acceptor holes in the Ps of the stator 2, and arrow 7 and Torque occurs in the opposite direction (a) B on the diagram
Although it is movable and braked so that the section is 0 or more indicating braking, it is possible to obtain any rotational speed or step rotation by controlling the movement and braking, and to adjust the wave height of the voltage other than zero applied to the electrode 4 or within 01. The torque is increased or decreased by increasing or decreasing the pulse width at .

Figure 2 is an explanatory diagram of a method for moving and braking a semiconductor motor when the rotor and stator channels are composed of dielectric materials. Figures (a) and (b) show control voltage waveform diagrams; C) shows a change in the channel opposing electrode area as the rotor rotates, and Figure (d) is a model diagram for explaining the movement and braking of the semiconductor motor. 1 is a semiconductor integrated circuit element forming an electronic circuit network including a motor control circuit. Reference numeral 2 denotes a stator, which is a part of the semiconductor integrated circuit element 1 and is composed of dielectric materials Sl, 52, . . . . 3
is a rotor, and is composed of dielectrics R1, R2, . . . on a base material of an intrinsic semiconductor 53. 4 is an electrode, and 51, 32... of stator 2 are electrically connected and have a voltage E.
Add. 6 is a gap, and the stator 2 and rotor 3 have a structure in which they are not in direct contact with each other. In such a structural configuration, the voltage shown in the figure (a) is applied to the electrode 4, but
The voltage waveform corresponds to the change in the area of the opposite electrode shown in (C). In explanatory diagram (d), 5 (Sl, S2...) and R (R
1, R2...) is shown at the time when the area of the opposite electrode is Win. At this point, the plus (+) voltage waveform shown in figure (a) is applied to the electrode 4, and the dielectric S of the stator 2 becomes dielectric. The dielectric R of the rotor 3 is dielectrically polarized due to electrostatic induction, and the gap 6 side becomes a negative charge, and an attractive force is generated between the stator 2 and the rotor 3, causing them to rotate in the direction of the arrow 7. The positive voltage is the opposite electrode area of S and R Mat
, that is, add up to θl in figure (C). The time period in which the opposing electrode areas of S and H are from Maw to Min, that is, (C)
In the time period from θl to 2 in the figure, the voltage of the electrode 4 is set to zero, and the rotor 3 rotates to 02 due to inertial rotation. The repetition up to this point shows the movement in (a) section A on the diagram.

Next, by applying a positive (+) voltage to the electrode 4 from the point in time when θ is 5 in the figure (C), that is, the time period from the point in time when the opposing electrode area of S and R is Mat to Win, S,! -R is electrostatic attraction, and arrow 7 is caused by a force in the opposite direction to the rotation direction (JL)
Section B in the diagram indicates braking.

The voltage waveform in figure (b) is the method of adding minus (-), and the principle of movement and braking is the same as the method of adding plus (+) in figure (L), only the difference in positive and negative dielectric polarization is Although it moves and brakes in a manner greater than 0, it is possible to obtain arbitrary rotational speeds and step rotations by controlling the movement and braking, and to increase and decrease the torque by increasing and decreasing the wave height and pulse width of the voltage E applied to the electrode 4. Figure 3 is an explanatory diagram of a method for moving and braking a semiconductor motor when the stator channel is composed of a dielectric material and the rotor channel is composed of a semiconductor.0 Figure (a) is a control voltage waveform diagram FIG. 1(b) is a diagram showing a change in channel counter electrode area as the rotor rotates, and FIG. 1(C) is a model diagram for explaining movement and braking of the semiconductor motor. 1 is a semiconductor integrated circuit element forming an electronic circuit network including a motor control circuit. Reference numeral 2 denotes a stator, which is a part of the semiconductor integrated circuit element 1 and is made of a dielectric material S. 3 is a rotor consisting of Pr consisting of P channels and Nr consisting of N channels. Reference numeral 4 denotes an electrode that electrically connects all channels (dielectric material S) of the stator 2 and applies voltage E to it. 6 is a gap, and the stator 2 and rotor 3 have a structure in which they do not come into direct contact with each other. In such a structural configuration, the voltage shown in FIG. 3(a) is applied to the electrode 4, and the voltage waveform is as shown in FIG. 2(b) as the area of the opposite electrode changes. In explanatory diagram (e), the area of opposing electrodes between Pr and S is Wax
At this point, a plus (+) voltage waveform in the voltage waveform shown in FIG. The rotor 3 produces a repulsive force with the acceptor hole in Pr.
rotates in the direction of arrow 7. A positive voltage is applied to the opposing electrode area Mar of Pr and S, that is, 01 in the figure (b), but the donor electrons in Nr of the rotor 3 are transferred to the gap 6 (+1 positive charge and attractive force) due to the dielectric polarization of the dielectric S of the stator 2. is generated, and the rotor 3 rotates in the direction of arrow 7. When the area of opposing electrodes between Pr and S becomes Win, the area of opposing electrodes between Nr and S becomes May, and from this point on, the negative (-) voltage waveform of the voltage waveform shown in (a) is applied to electrode 4. , that is, when the electrode 4 becomes negative in the time period from θl to 2 in Figure (b), the dielectric S of the stator 2
The gap 6 side of the stator 2 becomes negatively charged, creating a repulsive force with the donor electrons in Nr of the rotor 3, and the acceptor holes in Pr of the rotor 3 are attracted by the negative charges on the gap 6 side of the dielectric S of the stator 2. and rotates in the direction of arrow 7. The repetition up to this point shows the movement in (a) section A on the diagram.

Next, in (b) when θ is 5 in the figure, that is, from the time point M in of the opposite electrode surface between Pr and S to May, the electrode 4
By applying a positive (+) voltage, Pr and S are electrostatically repulsed by a force in the direction opposite to the direction of rotation of arrow 7 (a)
Section B in the diagram indicates braking.

The counter electrode area of Nr and S is also moved and braked by applying a negative (-) voltage to the electrode 4 from the time point Win to Maw. It is possible to obtain any rotational speed or step rotation by control, and to increase or decrease the torque by increasing or decreasing the wave height or pulse width of the voltage E applied to the electrode 4.

Figure 4 is an explanatory diagram of a method for moving and braking a semiconductor motor when the stator channel is composed of a semiconductor and the rotor channel is composed of a dielectric.
) shows a control voltage waveform diagram, Figure 1 (e) shows a change in channel opposing electrode area as the rotor rotates, and Figure (d)
is a model diagram for explaining movement and braking of a semiconductor motor. 1 is a semiconductor integrated circuit element forming an electronic circuit network including a motor control circuit. Reference numeral 2 denotes a stator, which is a part of the semiconductor integrated circuit element and is composed of Ps, which is a P channel, and Ns, which is an N channel. A rotor 3 is constructed of a dielectric material R on a base material of an intrinsic semiconductor 5. 4
are electrodes, and there are electrodes that are electrically connected to all Ps of the stator 2 and apply a voltage El, and electrodes that are electrically connected to all Ns of the stator 2 and apply a voltage E2. Reference numeral 6 denotes a gap, which has a structure in which the stator 2 and rotor 3 do not come into direct contact. In such a structural configuration, (a)
The voltage shown in the figure is applied to the electrode PsllEl, and the voltage shown in the figure (b) is applied to N5@E2 of the electrode 4, and the voltage waveform is the one that follows the change in the area of the opposite electrode shown in the figure (C). In explanatory diagram (d), P
The area of opposite poles between s and R is Ma! Although the time points are illustrated, P
If a negative (-) voltage is always applied to the s electrode 4,
The acceptor holes in Ps are attracted to the electrode 4 side and R
, and the Ns side electrode 4 has an instantaneous negative (
-), the donor electrons in Ns are pushed to the gap 6 side, dielectrically polarizes the dielectric R of the rotor 3, polarizes the gap 6 side to the positive charge side, and creates an electrostatic attraction between the stator 2 and the rotor 3. is generated, and the rotor 3 rotates in the direction of the arrow 7. Due to inertial rotation, a negative (-) voltage is momentarily applied to the Ns side electrode 4 at the time 02 in the figure (c), that is, at the time aMa1 of the opposite electrode surface of Ps and H. In addition, the donor electrons in Ns are pushed to the gap 6 side, and the dielectric R of the rotor 3 becomes roughly dielectrically polarized, and the gap 6 side is polarized to the positive charge side, creating an electrostatic attraction between the stator 2 and the rotor 3. The rotor 3 is movable in the direction of the arrow 7 at a speed greater than 0, and the rotational speed is increased or decreased depending on the wave height of the voltage applied to the Ns side electrode 4.

[Effects of the Invention] From one embodiment of the present invention as described above, ■ In general, systems affected by a magnetic field may be affected by the continuity of residual magnetism depending on the material composition, and it is important to shield the magnetic field. Although it requires equipment, the present invention, which requires only electric field shielding, can be achieved by a simple method and can reduce costs.

■In semiconductor motors, the number of channels in the rotor and stator can be increased, and the torque can be increased in proportion to the number of channels.

■Since the semiconductor integrated circuit element constitutes the motor, the number of pads and bonding in the semiconductor integrated circuit element can be reduced, and the stator electrodes and wiring of the motor can be formed using the same technology as the circuit formation of semiconductor integrated circuit elements. This has enabled ultra-miniaturization, cost reduction, and improved quality and reliability.

■By using an intrinsic semiconductor to separate the channels of the dielectric stator and rotor, improved rotation efficiency and sharp rotation angle control are possible.

■By using semiconductors for the main parts, current consumption is extremely small, and energy conversion efficiency is unparalleled at 70%.

In addition, the semiconductor motor shown in FIG. 1, which is composed of stator and Rogue channel semiconductors, is suitable for step motors and servo motors. The semiconductor motor shown in FIG. 2, in which the channels of the stator and rotor are made of dielectric material, is suitable for a high-torque motor as the channel material has a high dielectric constant. The semiconductor motor of FIG. 3, in which the stator channel is made of a dielectric material and the rotor channel is made of a semiconductor material, is suitable for a step motor or a motor. The semiconductor motor shown in Fig. 4, in which the stator channel is made of a semiconductor and the rotor channel is made of a dielectric material, is suitable for high-speed rotation and gyro applications.

As a result of the above-mentioned effects, a variety of new systems that have not existed before are being constructed.

[Brief explanation of the drawing]

Fig. 1 is an explanatory diagram of a movable and braking method for a semiconductor motor in which the stator and rotor channels are made of semiconductors according to the present invention, and Fig. 2 is an explanatory diagram of a movable and braking method for a semiconductor motor in which the stator and rotor channels are made of dielectric materials. Figure 3 is an explanatory diagram of the movable and braking method of a semiconductor motor in which the stator channel is a dielectric and the rotor channel is a semiconductor, and Figure 4 is an explanatory diagram of the movable and braking method of a semiconductor motor in which the stator channel is a semiconductor and the rotor channel is a dielectric. FIG. 2 is an explanatory diagram of a method for moving a semiconductor motor. l...Semiconductor integrated circuit element 2...Stator 3...Rotor 4...Electrode 5...Intrinsic semiconductor 6...Gap procedure correction book style) March 13, 1988

Claims (1)

[Scope of Claims] In a semiconductor motor consisting of a rotor that holds charges that act on external charges and a stator that holds charges that act on voltage, when the rotor and stator are made of semiconductors, the N-channel of the stator A negative potential is applied to the N channel of the stator and the N channel of the rotor from the point in time when the opposing electrode area is at its maximum to the point in time at which it is at its minimum, and then the voltage is set to zero until just before the area of the opposing electrode reaches its maximum. A moving method in which a positive potential is applied to the channel from the time when the opposing electrode area between the stator P channel and the rotor P channel is the maximum to the minimum point, and then the potential is set to zero until just before the opposing electrode area reaches the maximum, and the stator N channel of and N of rotor
A braking method in which a negative potential is applied to the N channel of the stator at any time from the minimum point in time when the channels have opposite electrode areas to the maximum point in time, and from the minimum point in time when the stator P channel and the rotor P channel have opposite electrode areas. If a braking method is provided that applies a positive potential to the P channel of the stator at any time up to the maximum time, and the channels of the stator and rotor are made of dielectric material,
A moving method in which a positive or negative potential is applied to the stator channel during the time period from when the opposing electrode area between the stator channel and the rotor channel reaches its maximum, and after that, zero potential is applied during the time period when the opposing electrode area decreases. and a braking method for decelerating the rotational speed of the rotor to a desired speed or maintaining it in a positive or negative state until it stops, and if the stator channel is composed of a dielectric material and the rotor channel is composed of a semiconductor material, the stator A positive potential is applied to the stator channel during the period from the maximum to the minimum area of opposing electrodes between the channel and the P channel of the rotor.
A movable method that applies a negative potential to the stator channel during the time period from the maximum to the minimum area of opposing electrodes between the stator channel and the N channel of the rotor, and a method of applying a negative potential to the stator channel from the minimum to the maximum area of opposing electrodes between the stator channel and the P channel of the rotor. During the period of time, a positive potential is applied to the stator channel, and the stator channel and rotor N
The stator channel is equipped with a braking method that applies a negative potential during the time period from the minimum to the maximum area of the opposite electrode with the channel, and when the stator channel is a semiconductor and the rotor channel is a dielectric, the stator N Add the P channel of the stator, which begins to decrease from the maximum point of the opposing electrode area between the channel and the rotor channel, and add the P channel of the stator, which begins to decrease from the point of maximum opposing electrode area between the stator's N channel and the rotor channel. A semiconductor motor having a movable method of applying a negative potential to the N-channel of the instantaneous stator.