JPS6314836B2 - - Google Patents
Info
- Publication number
- JPS6314836B2 JPS6314836B2 JP55094887A JP9488780A JPS6314836B2 JP S6314836 B2 JPS6314836 B2 JP S6314836B2 JP 55094887 A JP55094887 A JP 55094887A JP 9488780 A JP9488780 A JP 9488780A JP S6314836 B2 JPS6314836 B2 JP S6314836B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- display device
- low resistance
- thin
- crystalline low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 7
- 239000011521 glass Substances 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910020684 PbZr Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Description
【発明の詳細な説明】
本発明はエレクトロルミネセンス（以下ELと
略称する）表示装置に関し、さらに具体的には
EL層を誘電体層でサンドイツチ状に挾んだ、い
わゆる二重絶縁層構造で構成した薄膜EL表示装
置の改良に関するものである。[Detailed Description of the Invention] The present invention relates to an electroluminescent (hereinafter abbreviated as EL) display device, and more specifically,
This invention relates to an improvement of a thin film EL display device constructed with a so-called double insulating layer structure in which an EL layer is sandwiched between dielectric layers in a sandwich-like structure.
薄膜二重絶縁層形EL表示装置は周知のように、
たとえばガラス基板上に帯状の平行な透明電極を
配置し、その透明電極上に第１の薄膜誘電体層を
介してマンガンを添加した硫化亜鉛（ZnS：Mn）
のようなEL材料からなる薄膜EL層を形成し、さ
らにそのEL層上に第２の薄膜誘電体層を介して
背面電極となるべき帯状の平行な導体を前記透明
電極と直交する関係で配設し、透明電極と背面電
極との間に選択的に駆動電圧を印加することによ
り、これら交点部のEL層が発光することを利用
して所望の形象を表示するようにしたものであ
る。 As is well known, the thin film double insulating layer type EL display device is
For example, zinc sulfide (ZnS:Mn) is prepared by arranging strip-shaped parallel transparent electrodes on a glass substrate, and adding manganese to the transparent electrodes through a first thin dielectric layer.
A thin film EL layer made of an EL material such as By selectively applying a driving voltage between the transparent electrode and the back electrode, the EL layer at these intersections emits light to display a desired image.
現在、このようなEL表示装置は寿命や輝度の
点でも充分なものが得られており、既に実用化の
段階に至つているが、高い駆動電圧を必要とする
ので駆動回路の小形化や低価格化に不利である。 At present, such EL display devices have sufficient longevity and brightness, and have already reached the stage of practical use. However, since they require a high drive voltage, it is necessary to make the drive circuit smaller and lower. It is disadvantageous for pricing.
そこでEL表示装置の駆動電圧を下げるために
種々の試みがなされているが、その一つとして
EL層の膜厚を薄く形成することにより低電圧化
する方法がある。しかしこの方法ではEL層厚が
2000Å程度以下になると膜を構成する結晶粒の成
長が充分でなく、結晶性が良好でない結果発光効
率の低下を招くという問題があつた。 Therefore, various attempts have been made to lower the driving voltage of EL display devices, one of which is
There is a method of lowering the voltage by forming the EL layer thinner. However, with this method, the EL layer thickness
When the thickness is less than about 2000 Å, the crystal grains constituting the film do not grow sufficiently, resulting in poor crystallinity, resulting in a decrease in luminous efficiency.
本発明は前述の点に鑑みなされたもので、その
目的は結晶性を低下させることなくEL層厚を薄
くして発光効率の高い低電圧駆動可能なEL表示
装置を提供することであり、その特徴は対向する
電極間に誘電体層を介してEL層を挾持してなる
EL表示装置において、前記EL層との下層部を該
EL用母材の物質を主成分とする結晶性低抵抗層
４に置き換えたところにある。 The present invention has been made in view of the above-mentioned points, and its purpose is to provide an EL display device that can be driven at low voltage and has high luminous efficiency by reducing the thickness of the EL layer without reducing crystallinity. The feature is that the EL layer is sandwiched between opposing electrodes via a dielectric layer.
In an EL display device, the layer below the EL layer is
This is where a crystalline low resistance layer 4 whose main component is the material of the EL base material is substituted.
以下本発明の実施例につき図面を参照して説明
する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明によるEL表示装置の構造を説
明するための要部模型断面図であり、１は透明な
ガラス基板であつて、そのガラス基板１上には酸
化インジウム（In2O3）からなる帯状の平行な透
明電極２が配置され、その透明電極２上にチタン
酸鉛（PbTiO3）からなる第１の誘電体層３（た
とえば層厚4000Å程度）がスパツタリング法によ
り被着してある。そしてその誘電体層３上に結晶
性低抵抗層４（たとえば層厚約4000Å）を介して
ZnS：MnからなるEL層５（たとえば層厚約2000
Å）が形成され、さらにそのEL層５上にPbTiO3
からなる第２の誘電体層６（層厚4000Å程度）を
介してアルミニウム（Al）からなる帯状の平行
な背面電極７が透明電極２と直交する関係で配設
してある。 FIG. 1 is a cross-sectional view of a main part model for explaining the structure of an EL display device according to the present invention, in which 1 is a transparent glass substrate, and indium oxide (In 2 O 3 ) is deposited on the glass substrate 1. A first dielectric layer 3 (for example, layer thickness of about 4000 Å) made of lead titanate (PbTiO 3 ) is deposited on the transparent electrode 2 by a sputtering method. be. Then, a crystalline low resistance layer 4 (for example, about 4000 Å thick) is formed on the dielectric layer 3.
EL layer 5 made of ZnS:Mn (for example, layer thickness approx. 2000
) is formed, and PbTiO 3 is further formed on the EL layer 5.
A parallel strip-shaped back electrode 7 made of aluminum (Al) is disposed perpendicularly to the transparent electrode 2 via a second dielectric layer 6 (layer thickness of about 4000 Å) made of aluminum (Al).
以上の構成において従来のEL表示装置と異な
る点は第１の誘電体層３とEL層５との間に結晶
性低抵抗層４を介在させるとともにEL層５の層
厚を薄くしたところである。つまり本発明のEL
表示装置は従来のEL表示装置におけるEL層の一
部を結晶性低抵抗層に置き換えて結晶性の良好な
層厚の薄いEL層を形成したものである。この結
晶性低抵抗層４はたとえばZnSにインジウム
（In）を添加（たとえばInを重量比で0.1〜1.0％添
加）して構成したものであつて、EL層５の形成
前に蒸着により成膜したものである。そしてその
結晶性低抵抗層４上に薄い層厚のEL層５が蒸着
してある。このようにEL層５の母材、つまり
ZnSを主成分とした低抵抗層４を所定の厚みで形
成しておき、その上にEL層５を積層成長させる
ことにより、結晶性を低下させることなく層厚の
薄いEL層を形成することができ、その薄いEL層
５に電界を集中し得て、その結果従来EL層厚を
薄くすることで良好な結晶性が得られないことに
起因して生じていた発光効率の低下を招くことな
く、駆動電圧の低電圧化が可能となる。また結晶
性低抵抗層４は電子の注入源として働き、発光効
率の向上や印加電圧対輝度特性曲線における立上
り特性の改善にも寄与するので、前記結晶性の良
好な層厚の薄いEL層５と相俟つて発光効率の高
い、しかも低電圧駆動可能なEL表示装置が実現
できるのである。 The difference from the conventional EL display device in the above structure is that a crystalline low resistance layer 4 is interposed between the first dielectric layer 3 and the EL layer 5, and the thickness of the EL layer 5 is made thinner. In other words, the EL of the present invention
The display device is a conventional EL display device in which a part of the EL layer is replaced with a crystalline low resistance layer to form a thin EL layer with good crystallinity. This crystalline low resistance layer 4 is made of, for example, ZnS doped with indium (In) (for example, 0.1 to 1.0% of In is added by weight), and is formed by vapor deposition before the formation of the EL layer 5. This is what I did. A thin EL layer 5 is deposited on the crystalline low resistance layer 4. In this way, the base material of EL layer 5, that is,
By forming a low resistance layer 4 mainly composed of ZnS to a predetermined thickness and growing an EL layer 5 on top of it, a thin EL layer can be formed without reducing crystallinity. , and the electric field can be concentrated on the thin EL layer 5, resulting in a decrease in luminous efficiency, which conventionally occurred due to the inability to obtain good crystallinity by reducing the thickness of the EL layer. Therefore, it is possible to reduce the driving voltage. In addition, the crystalline low resistance layer 4 acts as an electron injection source and contributes to improving luminous efficiency and improving the rise characteristics in the applied voltage vs. brightness characteristic curve, so the thin EL layer 5 with good crystallinity Combined with this, it is possible to realize an EL display device that has high luminous efficiency and can be driven at low voltage.
第２図は前述の実施例のEL表示装置における
駆動電圧対輝度特性曲線であつて、横軸は周波数
1KHzの印加交番電圧を示し、縦軸は輝度をフー
トランバード（fL）単位で示したものである。同
図から明らかなように本発明によるEL表示装置
の発光開始電圧は約30Vと従来のものに比べて大
きく改善されている。いまたとえば第１図で説明
したEL表示装置における結晶性低抵抗層４も
ZnS：Mnで置き換えた、つまりEL層厚を6000Å
とした従来構成のEL表示装置の発光開始電圧が
70V程度であることからしても、本発明による
EL表示装置の改善効果は顕著であることがわか
る。 Figure 2 is a driving voltage versus brightness characteristic curve for the EL display device of the above-mentioned example, and the horizontal axis is the frequency.
The applied alternating voltage of 1 KHz is shown, and the vertical axis shows the brightness in footlumbards (f L ). As is clear from the figure, the emission starting voltage of the EL display device according to the present invention is approximately 30 V, which is greatly improved compared to the conventional device. For example, the crystalline low resistance layer 4 in the EL display device explained in FIG.
ZnS: replaced with Mn, that is, the EL layer thickness is 6000Å
The emission starting voltage of the EL display device with the conventional configuration is
Considering that it is about 70V, the present invention
It can be seen that the improvement effect of the EL display device is remarkable.
なおEL層の母材となる物質は、ZnS以外にセ
レン化亜鉛（ZnSe）、テルル化亜鉛（ZnTe）、硫
化カドミウム（CdS）、セレン化カドミウム
（CdSe）などや、これらの混合でも良い。但しこ
の場合結晶性低抵抗層の主成分は、EL層の母材
となる物質と同一のものを選びEL層の成膜工程
の簡易化や結晶成長の良化に留意する。また結晶
性低抵抗層に添加する物質はIn以外にAlやガリ
ウム（Ga）などでも良いし、誘電体層はPbTiO3
に限らずチタン酸バリウム（BaTiO3），PZT
（PbZr1―xTixO3），PLZT（Pb1-3/2xLaxZri―yTiy
O3）、酸化イツトリウム（Y2O3）、酸化スカンジ
ウム（Sc2O3）、酸化ハフニウム（Hf2O3）、酸化
アルミニウム（Al2O3）、窒化シリコン（Si3N4）
などを用いることもできる。 In addition to ZnS, the material serving as the base material of the EL layer may be zinc selenide (ZnSe), zinc telluride (ZnTe), cadmium sulfide (CdS), cadmium selenide (CdSe), or a mixture thereof. However, in this case, the main component of the crystalline low-resistance layer is selected from the same substance as the base material of the EL layer, and care is taken to simplify the process of forming the EL layer and improve crystal growth. In addition, the substance added to the crystalline low resistance layer may be Al, gallium (Ga), etc. other than In, and the dielectric layer may be PbTiO 3
Barium titanate (BaTiO 3 ), PZT
(PbZr 1 ― x Ti x O 3 ), PLZT (Pb 1-3/2x La x Zr i ― y Ti y
O 3 ), yttrium oxide (Y 2 O 3 ), scandium oxide (Sc 2 O 3 ), hafnium oxide (Hf 2 O 3 ), aluminum oxide (Al 2 O 3 ), silicon nitride (Si 3 N 4 )
etc. can also be used.
以上の説明から明らかなように本発明は要する
にEL層の一部を結晶性低抵抗層で置き換えて結
晶性の良好な層厚の薄いEL層を形成することに
より、発光効率の高い低電圧駆動可能なEL表示
装置が実現できて駆動回路の小形化や低価格化に
極めて有効である。 As is clear from the above description, the present invention basically consists of replacing a part of the EL layer with a crystalline low resistance layer to form a thin EL layer with good crystallinity, thereby achieving low voltage drive with high luminous efficiency. This makes it possible to realize an EL display device that is possible, and is extremely effective in reducing the size and cost of the drive circuit.
第１図は本発明によるEL表示装置の構造を説
明するための要部模型断面図、第２図は本発明に
よるEL表示装置における駆動電圧対輝度特性曲
線を示す図である。
１：ガラス基板、２：透明電極、３，６：誘電
体層、４：結晶性低抵抗層、５：EL層、７：背
面電極。
FIG. 1 is a schematic sectional view of a main part for explaining the structure of an EL display device according to the present invention, and FIG. 2 is a diagram showing a drive voltage versus brightness characteristic curve in the EL display device according to the present invention. 1: glass substrate, 2: transparent electrode, 3, 6: dielectric layer, 4: crystalline low resistance layer, 5: EL layer, 7: back electrode.
Claims (1)
してEL層５を挾持してなるEL表示装置におい
て、 前記EL層の下層部を該EL用母材の物質を主成
分とする結晶性低抵抗層４に置き換えて、結晶性
の良好な層厚の薄いEL層５を形成したことを特
徴とするEL表示装置。[Claims] 1. In an EL display device in which an EL layer 5 is sandwiched between opposing electrodes 2 and 7 with dielectric layers 3 and 6 interposed therebetween, the lower part of the EL layer is attached to the base material for EL. An EL display device characterized in that a thin EL layer 5 with good crystallinity is formed in place of the crystalline low resistance layer 4 whose main component is a substance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9488780A JPS5719995A (en) | 1980-07-10 | 1980-07-10 | El indicator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9488780A JPS5719995A (en) | 1980-07-10 | 1980-07-10 | El indicator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5719995A JPS5719995A (en) | 1982-02-02 |
| JPS6314836B2 true JPS6314836B2 (en) | 1988-04-01 |
Family
ID=14122547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9488780A Granted JPS5719995A (en) | 1980-07-10 | 1980-07-10 | El indicator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5719995A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6035496A (en) * | 1983-08-04 | 1985-02-23 | 松下電器産業株式会社 | El panel |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49108989A (en) * | 1973-02-20 | 1974-10-16 |
-
1980
- 1980-07-10 JP JP9488780A patent/JPS5719995A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49108989A (en) * | 1973-02-20 | 1974-10-16 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5719995A (en) | 1982-02-02 |
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