JPS63147320A - Formation of pattern for alignment - Google Patents

Formation of pattern for alignment

Info

Publication number
JPS63147320A
JPS63147320A JP61293524A JP29352486A JPS63147320A JP S63147320 A JPS63147320 A JP S63147320A JP 61293524 A JP61293524 A JP 61293524A JP 29352486 A JP29352486 A JP 29352486A JP S63147320 A JPS63147320 A JP S63147320A
Authority
JP
Japan
Prior art keywords
coherent light
pattern
light
alignment
photosensitive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61293524A
Other languages
Japanese (ja)
Inventor
Masato Muraki
真人 村木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP61293524A priority Critical patent/JPS63147320A/en
Publication of JPS63147320A publication Critical patent/JPS63147320A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a diffracted-light signal with a high SN ratio by a method wherein, when a pattern, for alignment use, on a first object is illuminated by a first beam of coherent light and is then transcribed to a prescribed part of a photosensitive layer on a second object, the prescribed part of the photosensitive layer is illuminated simultaneously by a second beam of coherent light at an illuminating angle which is different from the angle of the first beam of coherent light. CONSTITUTION:When a pattern 6, for alignment use, on a first object 3 is illuminated by a first beam SIGMA1 of coherent light and is then transcribed to a prescribed part of a photosensitive layer 7 on a second object 4, the prescribed part is illuminated by a second beam SIGMA2 of coherent light at an angle which is different from the angle of the first beam SIGMA1 of coherent light; this second beam of coherent light is made to interfere with the first beam SIGMA1 of coherent light; as a result, a pattern, for alignment use, in the form of a latent image of the first object 3 is formed three-dimensionally on the photosensitive layer 7 on the second object 4. For example, if the pattern 6, for alignment use, on a reticle 3 is illuminated from an illuminating device 2, the pattern 6, for alignment use, is transcribed onto a wafer 4 through an image-forming device 5. During this process, the distribution showing the refractive index and the transmissivity corresponding to the distribution of an interference fringe formed by the beam SIGMA1 and SIGMA2 is formed inside the resist layer 7 of the wafer 4.

Description

【発明の詳細な説明】 [発明の分野] 本発明は、位置合せ用のパターンの形成方法に関する。[Detailed description of the invention] [Field of invention] The present invention relates to a method for forming alignment patterns.

[従来技術] 従来、半導体露光装置における、ウェハとレチクルの位
置合せ方法の1つとして、潜像を用いたものがある。
[Prior Art] Conventionally, one of the methods for aligning a wafer and a reticle in a semiconductor exposure apparatus uses a latent image.

この方法により位置合せするには、まず、第3図に示す
ように、レチクル11上の位置合せ用パターン14を、
照明系10より照射される焼付光によって、結像系12
を介し、ウェハ13上の感光層であるレジストに転写す
る。その際、そのレジストがはぼ飽和するように焼付光
を照射する。すると、第4図のような潜像が形成される
。次に、この潜像と、前もってウニ八基板15上に形成
されているマークとを焼付光以外のレーザ光によフて走
査させ、その回折光を検知することによって潜像とマー
ク間の相対距離を求め位置合せを行なう。これが潜像を
用いた位置合せ方法である。
To align using this method, first, as shown in FIG. 3, the alignment pattern 14 on the reticle 11 is
The imaging system 12 is illuminated by the printing light emitted from the illumination system 10.
The image is transferred to a resist, which is a photosensitive layer, on the wafer 13 through the wafer 13. At that time, the printing light is irradiated so that the resist is fully saturated. Then, a latent image as shown in FIG. 4 is formed. Next, this latent image and the mark previously formed on the Unihachi substrate 15 are scanned with a laser beam other than the printing light, and the diffracted light is detected to determine the relationship between the latent image and the mark. Find the distance and perform alignment. This is an alignment method using latent images.

潜像は、第4図のように、焼付光に照射された部分(斜
線部分)とそうでない部分とで屈折率nl+n2および
透過率T、、T、が異なる。その分布はウニ八基板水平
方向に一次元なものである。
As shown in FIG. 4, the latent image has different refractive index nl+n2 and transmittance T, , T between the portions irradiated with the printing light (shaded portions) and the portions that are not. Its distribution is one-dimensional in the horizontal direction of the sea urchin eight substrates.

[発明が解決しようとする問題点] しかしながら、このような潜像パターン上にレーザをス
キャンさせその回折光を検知する場合、レーザ光が垂直
入射のときレジストの厚さによってその回折光の強度が
変化するという欠点があり、斜入射の場合は垂直入射に
比べ回折強度が減少し十分なS/Nが得られないという
欠点があった。
[Problems to be Solved by the Invention] However, when scanning a laser over such a latent image pattern and detecting the diffracted light, the intensity of the diffracted light depends on the thickness of the resist when the laser light is perpendicularly incident. In the case of oblique incidence, the diffraction intensity decreases compared to normal incidence, and a sufficient S/N ratio cannot be obtained.

本発明は、上述従来例の欠点を除去すると同時にS/N
の高い回折光信号が得られる位置合せ用パターンの形成
方法を提供することを目的とする。
The present invention eliminates the drawbacks of the conventional example described above and at the same time improves the S/N ratio.
It is an object of the present invention to provide a method for forming an alignment pattern that can obtain a high diffraction light signal.

[問題点を解決するための手段] 上記問題点を解決するため本発明では、第1の物体上の
位置合せ用パターンを第1のコヒーレント光で照明して
第2の物体上の感光層の所定部分に転写する際、同時に
第2のコヒーレント光を第1のコヒーレント光と異なる
照射角で該感光層の所定部分に照射するようにしている
[Means for Solving the Problems] In order to solve the above problems, the present invention illuminates the alignment pattern on the first object with the first coherent light to illuminate the photosensitive layer on the second object. When transferring to a predetermined portion, the second coherent light is simultaneously applied to the predetermined portion of the photosensitive layer at an irradiation angle different from that of the first coherent light.

[作用] 上述のように第2のコヒーレント光を第1のコヒーレン
ト光に対し異なる角度で照射すると、上記感光層内には
、第1および第2のコヒーレント光の干渉による干渉縞
に対応して層状の立体的なパターンが形成される。この
とき、第1および第2のコヒーレント光の照射角により
、感光層表面に対して層状パターンの各層がなす角を好
適に決めることができる。
[Function] When the second coherent light is irradiated with the first coherent light at different angles as described above, interference fringes due to interference between the first and second coherent lights are formed in the photosensitive layer. A layered three-dimensional pattern is formed. At this time, the angle formed by each layer of the layered pattern with respect to the surface of the photosensitive layer can be suitably determined by the irradiation angle of the first and second coherent lights.

[実施例] 以下、図面を用いて本発明の詳細な説明する。[Example] Hereinafter, the present invention will be explained in detail using the drawings.

第1図は本発明の一実施例に係る潜像形成方法を示す図
である。同図において、1は焼付光と同波長の照明用の
光を出力するレーザ光源、2は照明系、3はレチクル、
4はウェハ、5は結像系、6は位置合せ用パターンであ
る。照明系2はレチクル3上の位置合せ用パターン6を
照明する時だけコヒーレントな平行光束Σ1と光束Σ1
とは照射角の異なる第2の平行光束Σ2の2光束で照明
する。後の説明をしやすくする為にここでは平行光束Σ
、がレジスト7に垂直入射している場合を考える。
FIG. 1 is a diagram showing a latent image forming method according to an embodiment of the present invention. In the figure, 1 is a laser light source that outputs illumination light of the same wavelength as the printing light, 2 is an illumination system, 3 is a reticle,
4 is a wafer, 5 is an imaging system, and 6 is an alignment pattern. The illumination system 2 emits coherent parallel light flux Σ1 and light flux Σ1 only when illuminating the alignment pattern 6 on the reticle 3.
It is illuminated with two light beams, a second parallel light beam Σ2, which has a different irradiation angle from that of the second parallel light beam Σ2. In order to simplify the explanation later, here we use the parallel light flux Σ
, is vertically incident on the resist 7.

この構成において、照明系2によりレチクル3上の位置
合せ用パターン6を照射すると、結像系5を介してウェ
ハ4上に位置合せ用パターン6が転写される。その時、
ウェハ4のレジスト7内には、光束Σ1とΣ2が形成す
る干渉縞(強度)の分布に対応した屈折率および透過率
の分布が形成される。これがいわゆる潜像である。
In this configuration, when the alignment pattern 6 on the reticle 3 is irradiated by the illumination system 2, the alignment pattern 6 is transferred onto the wafer 4 via the imaging system 5. At that time,
In the resist 7 of the wafer 4, a refractive index and transmittance distribution is formed that corresponds to the distribution of interference fringes (intensities) formed by the light beams Σ1 and Σ2. This is the so-called latent image.

第2図は、この潜像が形成されたウェハ4の断面図であ
る。露光前のレジスト7の屈折率をnI、焼付光の波長
をλ、光束Σ1とΣ2のなす角を20とすると、スネル
の法則よりレジスト中では光束Σ1.Σ2はs+口2θ
=n、5in2θ′を満たす2θ′の角度を成している
。この時、潜像の縞は2つの光束Σ1.Σ2のぞれぞれ
の波面W、、W2の交叉点を結ぶ部分すなわち図面の斜
線部にできる。同図より明らかなように、潜像の縞は両
光束の成す角の半角でできている。ずなわち縞とウェハ
基板8の法線とのなす角はθ′ となる。また、縞ピッ
チはλ/2rzsin(θ′)となる。
FIG. 2 is a cross-sectional view of the wafer 4 on which this latent image is formed. Assuming that the refractive index of the resist 7 before exposure is nI, the wavelength of the printing light is λ, and the angle between the luminous fluxes Σ1 and Σ2 is 20, according to Snell's law, the luminous fluxes Σ1. Σ2 is s + mouth 2θ
=n, forming an angle of 2θ' that satisfies 5in2θ'. At this time, the fringe of the latent image consists of two light beams Σ1. This occurs at the portion connecting the intersection points of the wavefronts W, , W2 of Σ2, that is, the shaded area in the drawing. As is clear from the figure, the fringe of the latent image is made up of a half angle of the angle formed by both light beams. In other words, the angle between the stripes and the normal to the wafer substrate 8 is θ'. Further, the fringe pitch is λ/2rzsin(θ').

次に、第5図を参照して潜像の検知方法を述べる。同図
において、21は焼付光とは異なる波長λ′をもつレー
ザ光源、z2は偏光ビームスプリッタ、23はλ/4板
、24はコンデンサレンズ、25は光検出器である。
Next, a method for detecting a latent image will be described with reference to FIG. In the figure, 21 is a laser light source having a wavelength λ' different from that of the printing light, z2 is a polarizing beam splitter, 23 is a λ/4 plate, 24 is a condenser lens, and 25 is a photodetector.

この構成において、レーザ光源21(波長λ′)から直
線偏光光を供給すると、その光束は、まず、偏光ビーム
スプリッタ22を透過する。その後、ざらにλ/4板2
板金3過することにより円偏光となり、潜像が形成され
たウェハ4に入射する。
In this configuration, when linearly polarized light is supplied from the laser light source 21 (wavelength λ'), the light flux first passes through the polarizing beam splitter 22 . After that, roughly λ/4 plate 2
By passing through the sheet metal 3, the light becomes circularly polarized light and enters the wafer 4 on which a latent image is formed.

このとき、ウェハ4の法線に対しθ′ (但しsi口2
0″=n、 sin  (π/2−θ′)の入射角をも
つとすれば、光束は屈折率分布によりもとの光路を逆に
たどってλ/4板2板金3射し、直線偏光となる。この
光束は、今度は偏光ビームスプリッタ22によりコンデ
ンサレンズ24の方に反射され光検出器25に入射する
。このとき、レーザ光源21から図中の各編に入射する
光束を’l+  12+  13とすると、検出器まで
の各光束の光路差はλ/sinθ′ となる。したがっ
て、 が成立するようにθ′を決定しておけば潜像の信号強度
が最大となる。信号の外乱となるウェハ4の表面反射の
大部分はレーザ光源21の側と反対側に行くのでS/N
も高くなる。
At this time, θ' with respect to the normal to the wafer 4 (however, si port 2
Assuming that the incident angle is 0''=n, sin (π/2-θ'), the light beam reverses the original optical path due to the refractive index distribution and hits the λ/4 plate 2 sheet metal 3, resulting in linearly polarized light. This luminous flux is then reflected by the polarizing beam splitter 22 toward the condenser lens 24 and enters the photodetector 25. At this time, the luminous flux that enters each section in the figure from the laser light source 21 is 'l+ 12+ 13, the optical path difference of each beam to the detector is λ/sin θ'. Therefore, if θ' is determined so that the following holds true, the signal strength of the latent image will be maximized. Most of the surface reflection of the wafer 4 goes to the side opposite to the laser light source 21, so the S/N is
It also becomes more expensive.

以上のようにして、レチクル3上の位置合せパターンを
焼付光と同波長のコヒーレントな2光束によりこれらの
なす角を適当に選んで照明することにより、焼付光の波
長と異なる波長のレーザ光でレジスト厚さに関係なく効
率良く検出可能な潜像を形成することができる。
As described above, by illuminating the alignment pattern on the reticle 3 with two coherent beams with the same wavelength as the printing light, while appropriately selecting the angle formed by these beams, the alignment pattern on the reticle 3 can be illuminated with a laser beam with a wavelength different from that of the printing light. A detectable latent image can be formed efficiently regardless of the resist thickness.

ただし、波長によりレジストの屈折率が違うため、若干
、潜像検出時の照明光の入射角を波長に対応させて調整
する必要がある。
However, since the refractive index of the resist differs depending on the wavelength, it is necessary to adjust the incident angle of the illumination light when detecting a latent image to correspond to the wavelength.

[実施例の変形例] 上述においては、レチクル3上の位置合せパターン6を
2光束Σ3.Σ2で照明し両光束を結像系5を介してウ
ェハ4に照射しているが、どちらか一方をパターン6や
結像系5を介さずにウェハ4に直接照射してもかまわな
い。
[Modification of Embodiment] In the above description, the alignment pattern 6 on the reticle 3 is formed using two light beams Σ3. Although the wafer 4 is illuminated with Σ2 and both light beams are irradiated to the wafer 4 via the imaging system 5, either one of them may be irradiated directly onto the wafer 4 without passing through the pattern 6 or the imaging system 5.

また、潜像を検知する場合、上述においては入射光と回
折光が同一経路をもつが、両縁路間にある角度をもたせ
てもかまわない。
Further, when detecting a latent image, although the incident light and the diffracted light have the same path in the above example, a certain angle may be provided between the two edge paths.

[発明の効果コ 以上説明したように本発明によれば、感光層の厚さに関
係なく、S/Nの高い回折光信号として非常に効率よく
検出し得る位置合せ用の潜像パターンを形成することが
できる。
[Effects of the Invention] As explained above, according to the present invention, a latent image pattern for positioning is formed that can be detected very efficiently as a diffracted light signal with a high S/N ratio, regardless of the thickness of the photosensitive layer. can do.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の一実施例に係る潜像形成方法を示す
概略図、 第2図は、第1図の方法により形成した潜像パターンの
断面図、 第3図は、従来装置の概略図、 第4図は、従来の潜像パターンの断面図、第5図は、第
1図の方法により形成された潜像の検出方法を示す図で
ある。 1;レーザ光源、 2:照明系、 3ニレチクル、 4:ウェハ、 5:結像系、 6;位置合せ用パターン、 21:潜像検出用レーザ光源、 22:偏光ビームスプリッタ、 23;λ/4板、 24:コンデンサレンズ、 25:光検出器。 特許出願人   キャノン株式会社 代理人 弁理士   伊 東 辰 雄 代理人 弁理士   伊 東 哲 也 第1図 第2図 第4図
FIG. 1 is a schematic diagram showing a latent image forming method according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of a latent image pattern formed by the method of FIG. 1, and FIG. 3 is a diagram of a conventional apparatus. 4 is a sectional view of a conventional latent image pattern, and FIG. 5 is a diagram showing a method of detecting a latent image formed by the method of FIG. 1. 1: laser light source, 2: illumination system, 3 reticle, 4: wafer, 5: imaging system, 6: alignment pattern, 21: latent image detection laser light source, 22: polarizing beam splitter, 23: λ/4 plate, 24: condenser lens, 25: photodetector. Patent Applicant Canon Co., Ltd. Agent Patent Attorney Tatsuo Ito Agent Patent Attorney Tetsuya Ito Figure 1 Figure 2 Figure 4

Claims (1)

【特許請求の範囲】 1、第1の物体上の位置合せ用パターンを第1のコヒー
レント光で照明して第2の物体上の感光層の所定部分に
転写する際該所定部分に第2のコヒーレント光を上記第
1のコヒーレント光と異なる角度で照射して該第1のコ
ヒーレント光と干渉させることにより上記第2の物体上
の感光層に第1の物体の位置合せ用潜像パターンを立体
的に形成することを特徴とする位置合せ用パターンの形
成方法。 2、前記第1および第2のコヒーレント光が、1つの光
源からの出力光を分割したものである特許請求の範囲第
1項記載の位置合せ用パターンの形成方法。 3、前記第2のコヒーレント光が、前記第1のコヒーレ
ント光と同様に前記第1の物体上の位置合せ用パターン
を照明するものである特許請求の範囲第1項記載の位置
合せ用パターンの形成方法。 4、前記第1の物体がレチクルであり、前記第2の物体
がウェハであり、前記感光層が該エウハ上に塗布された
フォトレジストの層である特許請求の範囲第1項記載の
位置合せ用パターンの形成方法。
[Claims] 1. When the alignment pattern on the first object is illuminated with the first coherent light and transferred to a predetermined portion of the photosensitive layer on the second object, a second light is applied to the predetermined portion. By irradiating coherent light at a different angle from the first coherent light and causing it to interfere with the first coherent light, a latent image pattern for alignment of the first object is three-dimensionally formed on the photosensitive layer on the second object. 1. A method for forming an alignment pattern, the method comprising forming an alignment pattern. 2. The method for forming an alignment pattern according to claim 1, wherein the first and second coherent lights are obtained by dividing output light from one light source. 3. The alignment pattern according to claim 1, wherein the second coherent light illuminates the alignment pattern on the first object in the same way as the first coherent light. Formation method. 4. Alignment according to claim 1, wherein the first object is a reticle, the second object is a wafer, and the photosensitive layer is a layer of photoresist coated on the wafer. How to form a pattern for use.
JP61293524A 1986-12-11 1986-12-11 Formation of pattern for alignment Pending JPS63147320A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61293524A JPS63147320A (en) 1986-12-11 1986-12-11 Formation of pattern for alignment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61293524A JPS63147320A (en) 1986-12-11 1986-12-11 Formation of pattern for alignment

Publications (1)

Publication Number Publication Date
JPS63147320A true JPS63147320A (en) 1988-06-20

Family

ID=17795855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61293524A Pending JPS63147320A (en) 1986-12-11 1986-12-11 Formation of pattern for alignment

Country Status (1)

Country Link
JP (1) JPS63147320A (en)

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