JPS63143817A - Exposure apparatus - Google Patents

Exposure apparatus

Info

Publication number
JPS63143817A
JPS63143817A JP61291851A JP29185186A JPS63143817A JP S63143817 A JPS63143817 A JP S63143817A JP 61291851 A JP61291851 A JP 61291851A JP 29185186 A JP29185186 A JP 29185186A JP S63143817 A JPS63143817 A JP S63143817A
Authority
JP
Japan
Prior art keywords
mask
holder
semiconductor substrate
pattern
light source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61291851A
Other languages
Japanese (ja)
Inventor
Kazuhiko Tsuji
和彦 辻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP61291851A priority Critical patent/JPS63143817A/en
Publication of JPS63143817A publication Critical patent/JPS63143817A/en
Pending legal-status Critical Current

Links

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To enable a pattern of a semiconductor device having a size larger than that of an exposure range of a light source and a lens of an exposure apparatus to be transferred, by arranging a mask having a size larger than that of the projectable range and moving also mask, in addition to a semiconductor substrate which would be moved along according to prior arts, in synchronization with movement of the semiconductor substrate. CONSTITUTION:In a reducing projection exposure apparatus having an ultraviolet radiation light source 11, a mask holder 12, a reducing projection lens 13 and a sample material stage 14, a holder 12 has a size larger than that of the visual field of the lens by integral times. Predetermined regions of the holder 12 are moved by steps successively onto the visual field of the lens by a mask moving mechanism 15. The sample stage 14 is moved by steps by a moving mechanism 16 synchronously with the step movement of the holder 12, so that all the regions on the holder 12 are projected on the material stage by the light source. Further, the stage is adapted in the manner such that it can be moved in the X- and Y-directions by the same or different moving mechanisms 15 and 16, independently from the movement of the holder 12.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は大面積を有する半導体装置のパターン転写が可
能な露光装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an exposure apparatus capable of transferring patterns of semiconductor devices having a large area.

従来の技術 従来例を第3図にもとづいて説明する。紫外線照射光源
1、マスクホルダー2、縮小投影レンズ3および試料ス
テージ4を有する縮小投影露光装置においては、半導体
装置のパターンを数倍に拡大したパターンを形成したマ
スクをマスクホルダーに固定設置した後、前記マスクパ
ターンを縮小投影レンズにより半導体基板上に投影露光
する。
Prior Art A conventional example will be explained based on FIG. In a reduction projection exposure apparatus having an ultraviolet irradiation light source 1, a mask holder 2, a reduction projection lens 3, and a sample stage 4, a mask having a pattern that is several times larger than the pattern of a semiconductor device is fixedly installed on a mask holder. The mask pattern is projected and exposed onto the semiconductor substrate using a reduction projection lens.

次にマスクは固定したまま、半導体基板を移動機構6に
より順次移動させ、前記マスクパターンな頑次半導体基
板上に投影露光し、半導体基板全面にマスクパターンを
形成する。
Next, with the mask fixed, the semiconductor substrate is sequentially moved by the moving mechanism 6, and the mask pattern is stubbornly projected onto the semiconductor substrate to form a mask pattern on the entire surface of the semiconductor substrate.

発明が解決しようとする問題点 上記従来の装置においては、マスクは一度設置すると固
定したままであり、したがって投影領域の大きさはレン
ズによって制限され、投影領域を大きくするとレンズの
収差が大きくなり、解像度が劣化するという問題があっ
たoしたがって・高解像度パターンを投影するためには
、投影領域すなわち半導体装置の大きさが制御されると
いう問題があった。
Problems to be Solved by the Invention In the conventional apparatus described above, once the mask is installed, it remains fixed, so the size of the projection area is limited by the lens, and as the projection area is increased, the aberration of the lens becomes larger. There was a problem that the resolution deteriorated.Therefore, in order to project a high resolution pattern, there was a problem that the size of the projection area, that is, the semiconductor device must be controlled.

問題点を解決するための手段 本発明は従来の問題点を解決するため、投影可能領域よ
りも大きいマスクをマスクホルダーに設置し、従来の半
導体基板のみの移動に加え半導体基板の移動に同期して
、マスクも移動させることにより露光装置の光源および
レンズの露光領域より大きい半導体装置のパターンも転
写可能とするものである。
Means for Solving the Problems In order to solve the problems of the conventional art, the present invention installs a mask larger than the projectable area on the mask holder, and synchronizes the movement of the semiconductor substrate in addition to the conventional movement of only the semiconductor substrate. By moving the mask, it is also possible to transfer a pattern of a semiconductor device that is larger than the exposure area of the light source and lens of the exposure device.

作用 本発明の装置によればマスクと半導体基板を同期させて
、移動し露光領域より大きい領域のマスクパターンを、
半導体基板上に投影露光することができる。したがって
−半導体装置のチップサイズが露光領域より大きい場合
、マスク上に分割して複数個形成しておき、マスクを順
次移動させて、前記複数個のバタ、−ンを順次露光領域
に移動させて半導体基板上に露光する。このとき半導体
基板もマスクの移動に同期させて、所定の距離を順次移
動させることにより、半導体基板上に露光領域より大き
い半導体装置を形成することができる0実施例 第1図にもとづいて本発明の一実施例を説明する。紫外
線照射光源11、マスクホルダー12、縮小投影し/ズ
13、および試料ステージ14を一′有する縮小投影露
光装置において、マスクホルダー12を、前記レンズの
視野フィールド18の整数倍以上の大きさに形成する。
Operation According to the apparatus of the present invention, the mask and the semiconductor substrate are synchronized and moved to form a mask pattern in an area larger than the exposure area.
Projection exposure can be performed onto a semiconductor substrate. Therefore, if the chip size of the semiconductor device is larger than the exposure area, a plurality of chips are formed on a mask by dividing them, and the mask is sequentially moved to sequentially move the plurality of chips to the exposure area. Expose onto the semiconductor substrate. At this time, by sequentially moving the semiconductor substrate by a predetermined distance in synchronization with the movement of the mask, a semiconductor device larger than the exposed area can be formed on the semiconductor substrate. An example of this will be described. In a reduction projection exposure apparatus having an ultraviolet irradiation light source 11, a mask holder 12, a reduction projection lens 13, and a sample stage 14, the mask holder 12 is formed to have a size larger than an integral multiple of the field field 18 of the lens. do.

前記マスクホルダー12の所定の領域はマスク移動機構
16により順次レンズの視野フィールド上にステップ移
動される。試料ステージ14は、前記マスクホルダー1
2のステップ移動と同期して移動機構16によりステッ
プ移動し、マスクホルダー12上の全ての領域を前記光
源により、試料ステージ上に照射する。また試料ステー
ジ14はマスクホルダー12とは独立に、前記と同じか
もしくは異なるステップ移動機構16および16により
X−Y方向に移動可能としておく。
A predetermined area of the mask holder 12 is sequentially stepped onto the viewing field of the lens by a mask moving mechanism 16. The sample stage 14 includes the mask holder 1
In synchronization with the second step movement, the moving mechanism 16 moves step by step, and the entire area on the mask holder 12 is irradiated onto the sample stage by the light source. Further, the sample stage 14 is movable in the X-Y direction independently of the mask holder 12 by step movement mechanisms 16 and 16 that are the same as or different from those described above.

本発明の第2の実施例を第2図にもとづいて説明する。A second embodiment of the present invention will be described based on FIG.

X線照射光源21、マスクホルダー22および試料ステ
ージ23を有するI線投影露光装置において、前記マス
クホルダー22は前記X線照射光源21の照射領域26
より大きいマスク(図示せず)を支持でき、かつ、連続
移動およびステップ移動によりマスクパターン全面を照
射領域26に移動照射できる。前記マスクホルダー22
の移動は試料ステージの移動と同期させてそれぞれ移動
機構24および26により行なう。本装置を用いた照射
方法を以下に説明する。X線照射領域に、前記マスクホ
ルダーに保持したマスクを設置する。前記マスクパター
ンと試料ステージ上に保持した試料のパターンを位置合
わせした後、前記マスクホルダーと試料ステージを固定
保持し、前記マスク全館にX線が照射されるように移動
走査し、マスク上の所定のパターンを全て試料上に転写
する0次にX線照射をシャッターなどでじゃへいし、前
記試料ステージをステップ移動するとともに、前記マス
クホルダーを最初の位置に移動させ、再びマスク上の所
定パターンと試料上の前記と異なる場所のパターンを位
置合わせし、前記と同様に移動走査を行ない、試料ステ
ージ全面にマスクパターンを転写する。
In an I-ray projection exposure apparatus having an X-ray irradiation light source 21, a mask holder 22, and a sample stage 23, the mask holder 22 is connected to the irradiation area 26 of the X-ray irradiation light source 21.
A larger mask (not shown) can be supported, and the entire mask pattern can be moved and irradiated to the irradiation area 26 by continuous movement and step movement. The mask holder 22
are moved by moving mechanisms 24 and 26, respectively, in synchronization with the movement of the sample stage. The irradiation method using this device will be explained below. A mask held by the mask holder is placed in the X-ray irradiation area. After aligning the mask pattern and the pattern of the sample held on the sample stage, the mask holder and sample stage are held fixed and moved and scanned so that the entire mask is irradiated with X-rays, Next, the X-ray irradiation is blocked by a shutter, etc., and the sample stage is moved step by step, and the mask holder is moved to the initial position, and the predetermined pattern on the mask and the sample are transferred again. The pattern at a different location on the sample stage is aligned, and the same movement and scanning as above is performed to transfer the mask pattern to the entire surface of the sample stage.

発明の効果 以上のように本発明によれば、半導体基板の移動だけで
なく、マスクを移動させて、露光を行なうことができる
ため、投影レンズの露光可能領域およびX線等の照射領
域に関係なく、大面積のパターンを有するマスクパター
ンを半導体基板上に転写することができる0
Effects of the Invention As described above, according to the present invention, exposure can be performed not only by moving the semiconductor substrate but also by moving the mask. It is possible to transfer a mask pattern with a large area onto a semiconductor substrate.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例における露光装置の概略構成
図、第2図は本発明の他の実施例装置の概略構成図、第
3図は従来の露光装置の概略構成図である。 11.21・・・・・・光源、12.22・・・・・・
マスクホルダー、14.23・・・・・・試料ステージ
、15゜24・・・・・・マスクホルダー移動機構、1
6.25・・・・・・試料ステージ移動機構。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第3
図 1賀  嘩 ’!> 、s ′、> @ g;! ム 1− 派
FIG. 1 is a schematic diagram of an exposure apparatus according to an embodiment of the present invention, FIG. 2 is a schematic diagram of an apparatus according to another embodiment of the invention, and FIG. 3 is a schematic diagram of a conventional exposure apparatus. 11.21... Light source, 12.22...
Mask holder, 14.23...Sample stage, 15°24...Mask holder moving mechanism, 1
6.25...Sample stage movement mechanism. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 3
Figure 1: Fight! > , s ′, > @ g;! Mu 1- faction

Claims (1)

【特許請求の範囲】[Claims] 照射光源、マスクホルダーおよび試料ステージと、前記
光源の照射領域より大きい領域にパターンを有するマス
クを、前記マスクホルダーに設置し、前記マスク上のパ
ターンを前記光源の照射領域に順次移動させる機構と、
前記試料ステージ上に設置した半導体基板上のパターン
と前記マスクパターンを位置合わせした後、前記マスク
ホルダーの移動と同期して、前記半導体基板を順次移動
させ、半導体基板上に前記マスクの所定のパターンを照
射する機構と、前記試料ステージのみ独立に移動させ、
前記半導体基板上の異なるパターンと前記マスクパター
ンを再び位置合わせし、前記と同様にマスクと半導体基
板を同期して移動させ、前記マスクの所定パターンを半
導体基板上に転写する機構を有してなる露光装置。
a mechanism for installing an irradiation light source, a mask holder, a sample stage, and a mask having a pattern in an area larger than the irradiation area of the light source on the mask holder, and sequentially moving the pattern on the mask to the irradiation area of the light source;
After aligning the mask pattern with the pattern on the semiconductor substrate placed on the sample stage, the semiconductor substrate is sequentially moved in synchronization with the movement of the mask holder, and the predetermined pattern of the mask is placed on the semiconductor substrate. moving only the mechanism for irradiating and the sample stage independently;
The method further comprises a mechanism for realigning a different pattern on the semiconductor substrate and the mask pattern, moving the mask and the semiconductor substrate synchronously in the same manner as described above, and transferring a predetermined pattern of the mask onto the semiconductor substrate. Exposure equipment.
JP61291851A 1986-12-08 1986-12-08 Exposure apparatus Pending JPS63143817A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61291851A JPS63143817A (en) 1986-12-08 1986-12-08 Exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61291851A JPS63143817A (en) 1986-12-08 1986-12-08 Exposure apparatus

Publications (1)

Publication Number Publication Date
JPS63143817A true JPS63143817A (en) 1988-06-16

Family

ID=17774240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61291851A Pending JPS63143817A (en) 1986-12-08 1986-12-08 Exposure apparatus

Country Status (1)

Country Link
JP (1) JPS63143817A (en)

Similar Documents

Publication Publication Date Title
JP2502939B2 (en) Circuit pattern exposure equipment
US4864360A (en) Exposure apparatus
JPH08115872A (en) Exposure apparatus
JPH0616476B2 (en) Pattern exposure method
KR100695895B1 (en) Apparatus and Method for Scanning Photolithography
US5235626A (en) Segmented mask and exposure system for x-ray lithography
US5897986A (en) Projection patterning of large substrates using limited-travel x-y stage
TWI295070B (en) Semiconductor device manufacturing method,semiconductor device manufactured thereby and lithographic apparatus therefor
US4477182A (en) Pattern exposing apparatus
US5747221A (en) Photolithography method and photolithography system for performing the method
JP2004157327A (en) Mask for semiconductor device and exposure method
JPS60109228A (en) Projection exposing device
JPS63143817A (en) Exposure apparatus
JPH07211619A (en) Formation of circuit pattern and reticle therefor
Mayer et al. A new step-by-step aligner for very large scale integration (VLSI) production
KR100228570B1 (en) Method of exposure
JPH01293616A (en) Manufacture of semiconductor integrated circuit
JPH09148241A (en) Scanning aligner and method for manufacturing device using the same
JPH01134919A (en) Optical stepper
JPH11233428A (en) Aligner and manufacture of element
JP3034285B2 (en) Charged beam exposure equipment
JPH01261821A (en) Reduction projection aligner
JPH0982633A (en) Projection exposure device
JP2973737B2 (en) Exposure method and exposure apparatus used for carrying out the method
JPS60221757A (en) Mask for exposure