JPS63142811A - Manufacture of boundary superstructure - Google Patents
Manufacture of boundary superstructureInfo
- Publication number
- JPS63142811A JPS63142811A JP61290881A JP29088186A JPS63142811A JP S63142811 A JPS63142811 A JP S63142811A JP 61290881 A JP61290881 A JP 61290881A JP 29088186 A JP29088186 A JP 29088186A JP S63142811 A JPS63142811 A JP S63142811A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- ray
- superstructure
- boundary
- diffracted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000013078 crystal Substances 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 6
- 229910052790 beryllium Inorganic materials 0.000 abstract description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 abstract description 4
- 238000012544 monitoring process Methods 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract description 2
- 230000005469 synchrotron radiation Effects 0.000 abstract description 2
- 238000007740 vapor deposition Methods 0.000 description 9
- 238000011065 in-situ storage Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は界面超構造の製造方法に関するものである。[Detailed description of the invention] [Industrial application field] The present invention relates to a method for manufacturing interfacial superstructures.
従来、フィジカル レビュー レターズ（Ｐｈｙｓ。 Previously, Physical Review Letters (Phys.
Ｒｅｖ、Ｌｅｌｌ、）５６（１９８６）３５５に記載さ
れているように、アモルファスＳＬと（１１１）Ｓｉの
界面に７Ｘ７超構造が存在することが透過電子線回折法
により示されている。しかし、これは電子線回折を行う
ために試料を破壊する手法であり、これまでその場観察
による製造方法は報告されていない。As described in Rev. Lell, ) 56 (1986) 355, it has been shown by transmission electron diffraction that a 7X7 superstructure exists at the interface between amorphous SL and (111) Si. However, this is a method that destroys the sample in order to perform electron beam diffraction, and a manufacturing method based on in-situ observation has not been reported so far.
界面超構造のその場ｗｔ察による製造方法がないために
、界面超構造を多層に成長させることが困難である。ま
た、評価したあとの構造物の電気的、光学的性質を利用
できない。The lack of in-situ fabrication methods for interfacial superstructures makes it difficult to grow interfacial superstructures in multiple layers. Furthermore, it is not possible to utilize the electrical and optical properties of the structure after it has been evaluated.
本発明の目的は試料を破壊しないで評価しながら界面超
構造を製造する方法を提供することにある。An object of the present invention is to provide a method for manufacturing an interfacial superstructure while evaluating the sample without destroying it.
本発明は固体一固体界面において、界面付近の数原子層
に存在するバルク結晶より大きい周期をもつ超構造をＸ
線によって評価しながら一層または多層にわたって積層
することを特徴とする界面超構造の製造方法である。The present invention creates a superstructure with a period larger than that of the bulk crystal existing in several atomic layers near the interface at a solid-solid interface.
This is a method for manufacturing an interfacial superstructure, which is characterized by laminating one layer or multiple layers while evaluating by lines.
本発明は界面超構造作成の際、その場観察をＸ線で行う
ものである。Ｘ線は電子線より固体内への侵入深さが大
きく試料を破壊する必要がなく、多層にわたって積層可
能となる。In the present invention, in-situ observation is performed using X-rays when creating an interface superstructure. X-rays penetrate deeper into solids than electron beams, and there is no need to destroy the sample, making it possible to stack multiple layers.
以下、本発明の一実施例を図により説明する。 Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第１図は本発明に係る界面超構造の製造装置を示すもの
である。第１図において、超高真空槽８に真空ポンプ９
を接続し、該超高真空槽８の底部側に、蒸着物質４を充
填してなる蒸着源５を設置する。６は液体窒素シュラウ
ドである。FIG. 1 shows an apparatus for manufacturing an interface superstructure according to the present invention. In FIG. 1, a vacuum pump 9 is connected to an ultra-high vacuum chamber 8.
A vapor deposition source 5 filled with a vapor deposition substance 4 is installed on the bottom side of the ultra-high vacuum chamber 8. 6 is a liquid nitrogen shroud.
さらに、前記蒸着源５の上部に設けた窓部５ａの上方の
所定位置に試料台２をゴニオメータによる回転機構３に
支持させて設置し、該試料台２の下面に試料１をセット
する。また蒸着源５の窓部５ａにシャッター１０を開閉
可能に設置する。Further, a sample stage 2 is supported by a goniometer rotating mechanism 3 and installed at a predetermined position above a window 5a provided at the top of the vapor deposition source 5, and a sample 1 is set on the lower surface of the sample stage 2. Further, a shutter 10 is installed in the window portion 5a of the vapor deposition source 5 so as to be openable and closable.
一方、前記超高真空槽８の側壁には前記試料台２とほぼ
同一高さ位置にＸ線１１の入射用窓７ａと回折ＸＡ１１
２の出射用ベリリウム窓７ｂとを設けである。On the other hand, on the side wall of the ultra-high vacuum chamber 8, there is an entrance window 7a for X-rays 11 and a diffraction XA 11 located at almost the same height as the sample stage 2.
Two exit beryllium windows 7b are provided.
まず、ゴニオメータの回転機構３の試料台２に試料１を
取付けて該試料１を所定位置にセットし。First, the sample 1 is attached to the sample stage 2 of the rotation mechanism 3 of the goniometer, and the sample 1 is set at a predetermined position.
シャッター１０を開いて蒸着源５から蒸着物質を試料台
２の試料１に向けて放出し該試料１に蒸着物質４を蒸着
させる。その際、超高真空槽８の窓７ａ。The shutter 10 is opened to release the vapor deposition material from the vapor deposition source 5 toward the sample 1 on the sample stage 2, and the vapor deposition material 4 is vapor-deposited onto the sample 1. At that time, the window 7a of the ultra-high vacuum chamber 8.
からシンクロトロン放射Ｘ線などの強力なＸ線１１を試
料１に照射する。試料１に照射されたＸ線１１は試料１
の界面超構造で回折され、回折Ｘ線１２となって超高真
空槽８のベリリウム窓７ｂから出射する。この回折Ｘ線
１２の強度をモニターすることにより、その場観察を行
いつつ、界面付近の数原子層に存在するノ１ルク結晶よ
り大きい周期をもつ超構造をＸ線で評価しながら一層又
は多層にわたって積層する。また、Ｘ線で超構造のその
場観察を行う場合には、ゴニオメータによる回転機構３
を駆動して試料１を適宜角回転させ超構造に対するＸ線
の入射方向を変更してＸ線での評価を多方向から行う。The sample 1 is irradiated with powerful X-rays 11 such as synchrotron radiation X-rays. The X-rays 11 irradiated on sample 1
It is diffracted by the interface superstructure, becomes diffracted X-rays 12, and exits from the beryllium window 7b of the ultra-high vacuum chamber 8. By monitoring the intensity of this diffraction Laminated over the entire length. In addition, when performing in-situ observation of superstructures using X-rays, a rotating mechanism 3 using a goniometer is used.
is driven to rotate the sample 1 by an appropriate angle to change the direction of incidence of X-rays on the superstructure, thereby performing X-ray evaluation from multiple directions.
本発明は以上説明したように、試料に蒸着物質を蒸着さ
せる際、界面超構造での回折Ｘ線の強度をモニターする
ことにより、その場ＥＰＸを行うことができ、かつ試料
を破壊することがないため、多層に成長させることがで
きる効果を有するものである。As explained above, the present invention enables in-situ EPX to be performed by monitoring the intensity of diffracted X-rays at the interface superstructure when depositing a deposition substance on a sample, and without destroying the sample. Therefore, it has the effect of being able to grow in multiple layers.
第１図は本発明の一実施例を示す構成図である。
１・・・試料 ２・・・試料台３・・・回
転機構 ４・・・蒸着物質５・・・蒸着源
６・・・液体窒素シュラウド７ａ・・・窓
７ｂ・・・ベリリウム窓８・・・超高真空
槽 ９・・・真空ポンプ１０・・・シャッター
１１・・・入射Ｘ線１２・・・回折Ｘ線FIG. 1 is a block diagram showing an embodiment of the present invention. 1... Sample 2... Sample stage 3... Rotation mechanism 4... Vapor deposition substance 5... Vapor deposition source
6...Liquid nitrogen shroud 7a...Window
7b... Beryllium window 8... Ultra-high vacuum chamber 9... Vacuum pump 10... Shutter
11... Incident X-ray 12... Diffracted X-ray
Claims (1)
存在するバルク結晶より大きい周期をもつ超構造をＸ線
によって評価しながら一層または多層にわたって積層す
ることを特徴とする界面超構造の製造方法。(1) Manufacturing an interfacial superstructure at a solid-solid interface, which is characterized by laminating one layer or multiple layers while evaluating the superstructure with a period larger than the bulk crystal existing in several atomic layers near the interface using X-rays. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61290881A JPS63142811A (en) | 1986-12-05 | 1986-12-05 | Manufacture of boundary superstructure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61290881A JPS63142811A (en) | 1986-12-05 | 1986-12-05 | Manufacture of boundary superstructure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63142811A true JPS63142811A (en) | 1988-06-15 |
Family
ID=17761716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61290881A Pending JPS63142811A (en) | 1986-12-05 | 1986-12-05 | Manufacture of boundary superstructure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63142811A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0233350U (en) * | 1988-08-29 | 1990-03-02 | ||
| JPH02247549A (en) * | 1989-03-20 | 1990-10-03 | Raimuzu:Kk | Analysis of multilayered film and formation of multilayered film |
-
1986
- 1986-12-05 JP JP61290881A patent/JPS63142811A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0233350U (en) * | 1988-08-29 | 1990-03-02 | ||
| JPH02247549A (en) * | 1989-03-20 | 1990-10-03 | Raimuzu:Kk | Analysis of multilayered film and formation of multilayered film |
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