JPS63136438A - Electron emitting device - Google Patents

Abstract

PURPOSE:To simplify circuit composition by composing a logic circuit by the following means: controlling an electron emitting element, controlling a potential of a grid formed in the direction of electron emission, and controlling a current flowing in the element. CONSTITUTION:The amount of electrons emitted from an electron emitting element 1 is controlled by voltage controlling means 3 and 4 consisting of transistors and relays and the like so as to compose an AND circuit. The amount of electrons emitted from the element 1 is controlled by a means 3 or by a current controlling means 5 consisting of light emitting elements so as to compose an OR circuit. Moreover, the amount of electrons emitted from the element 1 or the amount of electrons passing through a grid 2 are controlled by means 3, 4 or 5 so as to compose a NOT circuit. Hence, circuit composition can be simplified without a necessity of forming another logic circuit which controls the input of the element 1.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an electron-emitting device, and particularly to an electron-emitting device using a logic circuit.
The present invention relates to an electron emission device that controls the amount of electron emission.

[Prior Art] As an electron-emitting element used in a conventional electron-emitting device, PN! When using 1c avalanche breakdown, the direction is to apply a forward bias to the PN junction and inject electrons into the P layer,
Elements having a structure in which a thin insulating layer is sandwiched between metals (11M type), as well as field emission type and surface conduction type elements have been proposed.

Figure 3 (^) is a schematic illustration of an electron-emitting device that injects electrons into the P layer by applying a forward bias to the PN junction, and Figure 3 (B) is a schematic diagram of the electron-emitting device. It is a graph showing current-voltage characteristics.

In the figure (A), when a forward bias voltage V is applied to the PN junction, a forward current I as shown in the figure (B)
The electrons injected from the N layer into the P layer are emitted from the surface of the P layer into a vacuum. The surface of this P layer is coated with cesium Cs or the like in order to lower the weakening function and increase the amount of electron emission.

Figure 4 is a schematic diagram of the MIM type electron-emitting device, and Figure 5 is surface conduction! FIG. 1 is a schematic configuration diagram of an electron-emitting device.

MTM type electron-emitting device fully bent electrode 6. It has a structure in which an insulating layer 7 and a thin fully bending electrode 8 are stacked, and the electrodes 6 and 8
By applying a voltage between them, electrons are emitted from the thin electrode 8 side.

Further, in the surface conduction type electron-emitting device, electrodes 10 and 11 are formed on an insulating substrate 9, and a rough high-resistance thin film 1 is formed between the electrodes 10 and 11.
2 are formed. Then, the voltage is applied to electrodes 10 and 1.
By applying the voltage for a period of 1, electrons are emitted from the surface of the high-resistance thin W212.

[Problems to be Solved by the Invention] In an electron-emitting device using such an electron-emitting device, electron emission is controlled by a driving voltage applied to the electron-emitting device or an accelerating voltage applied to the accelerating electrode, for example, 0N10FF.
can be controlled. If this 0N10FF control is performed using a plurality of logic signals, control using a logic circuit is required.

However, conventional electron-emitting devices are based on logic circuits.
When I'Jl is performed, it is necessary to provide a logic circuit for controlling the input of the electron-emitting device separately from the electron-emitting device, which poses a problem of complicating the circuit configuration.

An object of the present invention is to simplify the circuit configuration by providing an electron emitting device having AND, OR, and N07 functions.

[Means for Solving the Problems] The above problems involve an electron-emitting device, a grid formed in the electron-emitting direction of the electron-emitting device, and a first grid for controlling the amount of electrons emitted from the electron-emitting device. The problem is solved by the electron emitting device of the present invention, which includes a voltage control means, a second voltage control means for controlling the potential of the grid, and a current control means for controlling the current flowing through the electron emitting element.

[Function] The present invention can control the amount of electrons emitted from the electron-emitting device by the first voltage control means and the second voltage control means, or by the current control means and the second voltage control means. AND by controlling the amount of electrons passing through the grid.
configuring a circuit, and configuring an OR circuit by controlling the amount of electrons emitted from the electron-emitting element by either the first voltage control means or the current control means, and the first voltage control means The 807 circuit is configured by controlling the amount of electrons emitted from the electron-emitting element or the amount of electrons passing through the grid depending on the current control means, the current control means, or the second voltage control means. .

[Example] Hereinafter, an example of the present invention will be described in detail using the drawings.

The first UA is a description of the basic configuration of the electron emission device of the present invention [4
It is.

In the figure, l is an electron-emitting device. 2 is a grid that controls emitted electrons by an electric field. 3 is a voltage V applied to the electron-emitting device 1;

This is a voltage control means that performs 0N10FFfiiiiin.

Reference numeral 4 denotes voltage control means for performing 0N10FF control of the voltage v2 applied between the electron-emitting device 1 and the grid 2.

The voltage v2 applied by the 'a voltage control means is a positive voltage, and this voltage value is set to a value at which the electrons emitted from the electron-emitting element l are attracted to the grid 2. When voltage v2 is not applied, electron flow! . becomes substantially 0. The voltage V applied by the voltage control means 41 is a negative voltage, and the voltage value is set so as to cancel the voltage v2.

41 is a voltage control means that performs 0N10FF control of voltage v3. 5 is a current i supplied to the electron-emitting device l. 0N
This is a current control means that performs 10FFitJI control. Io is the current due to the electrons passing through the grid 2.

Examples of electron-emitting devices include those that use the avalanche breakdown of the PN junction described above, those that inject electrons into the P layer by sequentially applying an electrical current to the PN junction, and those that have a structure in which a thin insulating layer is sandwiched between metal layers. In addition, field emission type, surface conduction type elements, etc. can be used. As the voltage control means 3, 4, 41, transistors, relays, etc. can be used. The current control means 5 may be any device as long as it can flow a current, jO, to the electron-emitting device independently of the voltage control means 3 that controls the voltage applied to the electron-emitting device 1, and for example, as an electron-emitting device l as described later. When using avalanche breakdown of a PN junction, a light emitting means such as an LED can be used as a current control means, and the light intensity can be controlled and the photocurrent can be controlled by the photoelectromotive force generated in the electron-emitting element l. .

The operation of the electron-emitting device of the present invention when avalanche breakdown of a PN junction is used as the electron-emitting device will be described below.

FIG. 2 is an explanatory diagram showing an embodiment of the electron emitting device of the present invention.

In the figure, an electron-emitting device 1a emits electrons using avalanche breakdown of a PN junction.

7. The flow control means is a light emitting element such as an LED (not shown).

The voltage control means 3a is a transistor, and performs 0N10FF control of the voltage v1 applied to the electron-emitting device 1a.
Voltage control means 4a, 41a are transistors, and voltage V2.
Performs 0N10FF control of V. 1. is the photocurrent generated by the photovoltaic force of the electron-emitting device 1a caused by the light-emitting device.

In this embodiment, the AND circuit is controlled by setting the photocurrent i to 0 and inputting signals to the voltage control means 3a and the voltage control means 4a. That is, when a rHJ level signal is applied to the voltage control means 3a, the electron-emitting device 1a
When a voltage 1 is applied to the grid 2 and electrons are emitted, and a rHJ level signal is applied to the voltage control means 4a, a voltage v2 (as long as the voltage passes through the grid) is applied to the grid 2. , the electrons emitted from the electron-emitting device 1a pass through the grid 2 as a11i4t, , electron ml. or it will flow. In this case, if an [L] level signal is applied to either one of the voltage control means 3.4, it is determined whether electrons are emitted from the electron-emitting element 1a or not, and the grid voltage v2
Electric current because the electrons emitted by are not attracted! . will not flow.

Next, the OR circuit is controlled by setting the potential of the grid 2 to 2 using the voltage control means 4a and inputting a signal to a light emitting element (not shown) and the voltage control means 3a. That is, when a signal at the rHJ level is applied to the light emitting element, the electron emitting element 1a is irradiated with light, a photovoltaic force is generated, electrons are emitted from the electron emitting element 1a, and the electrons pass through the grid 2 to generate a current I. Or flows.

On the other hand, when a rHJ level signal is applied to the voltage control means 3a, electrons are emitted from the electron-emitting element 1a, similar to the above-mentioned AND circuit, and these electrons pass through the grid 2 to generate a current . I can tell. In this case, the electron emission by the light emitting element and the electron emission by the voltage key control means 3a are mutually independent, and even if a signal of [L level is applied to one side, the current I.

continues to flow.

Next, the 807 circuit is controlled by inputting a signal to the voltage control means 41a. At this time, the voltage control means 3a and 4a are kept ON. The voltages v2 and v3 cancel each other out due to the "H" level signal applied to the transistor, and the electrons emitted from the electron-emitting element 1a are no longer attracted, so that the current I. will not flow.

In this case, it is also possible to control the voltage control means 3a or the light emitting element to provide a NOT@ function.

[Effects of the Invention] As described above in detail, according to the electron-emitting device of the present invention, the AND circuit, the OR circuit, and the 807 circuit are configured by the electron-emitting elements with a simple configuration, and the AND circuit is It becomes possible to configure any logic circuit by combining the components of the circuit, OR circuit, and 807 circuit.

4. Description of Drawings FIG. 1 is an explanatory diagram of the basic configuration of the electron emitting device of the present invention.

The second I2I is an explanation IA showing an embodiment of the electron emitting device of the present invention.

Figure 3 (A) shows that the PN junction is forward biased and the P
FIG. 3B is a schematic illustration of an electron-emitting device that injects electrons into a layer.

FIG. 5 shows a schematic structure of a surface conduction yIi electron-emitting device.

1, la... Electron-emitting device, 2... Grid, 3゜3 a, 4, 4 a, 41, 41 a -
- Voltage control means, 5...Current control means agent Minoru Yamashita, Physician, Figure 1, Figure 2rA, Figure 3

Claims (1)

[Claims] An electron-emitting device, a grid formed in the electron-emitting direction of the electron-emitting device, a first voltage control means for controlling the amount of electrons emitted by the electron-emitting device, and a second voltage for controlling the potential of the grid. An electron-emitting device comprising: a control means; and a current control means for controlling a current flowing through the electron-emitting element.