JPS63133683A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JPS63133683A JPS63133683A JP61281009A JP28100986A JPS63133683A JP S63133683 A JPS63133683 A JP S63133683A JP 61281009 A JP61281009 A JP 61281009A JP 28100986 A JP28100986 A JP 28100986A JP S63133683 A JPS63133683 A JP S63133683A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- optical fiber
- cavity
- emitting diode
- diode element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 239000013307 optical fiber Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000012544 monitoring process Methods 0.000 abstract description 4
- 229920002050 silicone resin Polymers 0.000 abstract description 2
- 238000010168 coupling process Methods 0.000 description 10
- 230000008878 coupling Effects 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 238000004891 communication Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005253 cladding Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000000835 fiber Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004677 Nylon Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
この発明は、発光ダイオード素子と光ファイバとを備え
る半導体発光装置において、
光ファイバの発光ダイオード素子に対する位置を、発光
波長に対して透明な半導体基板に設けた円筒状の空洞に
該光ファイバを嵌合することにより制御して、
従来の出力光をモニタして行う位置合ゎせを不要とし、
利用分野の要望に応えるものである。[Detailed Description of the Invention] [Summary] The present invention provides a semiconductor light emitting device including a light emitting diode element and an optical fiber, in which the position of the optical fiber relative to the light emitting diode element is provided on a semiconductor substrate that is transparent to the emission wavelength. The optical fiber is controlled by fitting it into a cylindrical cavity, eliminating the need for conventional positioning that requires monitoring the output light.
It responds to the demands of the field of use.
本発明は半導体発光装置、特に発光ダイオード素子とこ
れに結合された光ファイバとを備える半導体発光装置の
構造に関する。The present invention relates to a semiconductor light emitting device, and more particularly to a structure of a semiconductor light emitting device including a light emitting diode element and an optical fiber coupled to the light emitting diode element.
発光ダイオード（ＬＥＤ）はレーザダイオード（ＬＤ）
に比較してその製造及び応用が容易であるために、光フ
アイバ通信においても低中速・近中距離通信の分野に広
く使用されている。この分野の光通信装置は量的に大き
い比重を占めており、例えば容器内に光ファイバを組み
込むなどの使用上の利便性と、価格が低廉であることが
最も強く要望されている。Light emitting diode (LED) is a laser diode (LD)
Because it is easier to manufacture and apply than other optical fibers, it is widely used in the fields of low-medium speed and short-medium distance communications in optical fiber communications. Optical communication devices in this field occupy a large proportion in terms of quantity, and are most strongly desired to be convenient in use, such as incorporating an optical fiber into a container, and to be inexpensive.
ＬＥＤ及びこれと光ファイバとの結合方式について従来
多くのｒ構造が開発されているが、第２図はその１例を
示す模式図である。Many r structures have been developed in the past for LEDs and coupling methods between them and optical fibers, and FIG. 2 is a schematic diagram showing one example.
同図において、２１はｎ型インジウムＷ（ＴｎＰ） ％
板、２２はｎ型ＩｎＰ層、２３はインジウムガリウム砒
素燐（ＩｎＧａＡｓＰ）活性層、２３Ａは発光領域、２
４はｐ型ｒｎＰ層・２５はｐ型ＩｎＧａＡｓＰ層、２６
はｎ側電極、２７はｎ側電極、２８は例えば二酸化シリ
コン（ＳｉＯｚ）によるλ色縁膜、２９は例えば金（Ａ
ｕ）めっきによるヒートシンク（ＰＩＩＳ）、３０は光
ファイバである。In the same figure, 21 is n-type indium W (TnP)%
22 is an n-type InP layer, 23 is an indium gallium arsenide phosphide (InGaAsP) active layer, 23A is a light emitting region, 2
4 is a p-type rnP layer, 25 is a p-type InGaAsP layer, 26
is an n-side electrode, 27 is an n-side electrode, 28 is a λ-colored frame film made of silicon dioxide (SiOz), and 29 is made of gold (A
u) Plated heat sink (PIIS), 30 is an optical fiber.
本従来例はＩｎＰ基板２１をウィンド層としてその光出
射面を凸面に加工し、更に光ファイバ３０の先端を球面
に溶融加工して結合効率を高めたファイバ・レンズ結合
方式であり、個別レンズ結合方式より部品数、組み立て
工数が減少している。This conventional example is a fiber-lens coupling method in which the InP substrate 21 is used as a window layer and its light output surface is processed into a convex surface, and the tip of the optical fiber 30 is melt-processed into a spherical surface to increase the coupling efficiency. The number of parts and assembly man-hours are reduced compared to the conventional method.
この従来例のファイバ・レンズ結合構造を光ファイバを
組み込んだ半導体発光装置として実装するには、ＬＥＩ
）チップをステム上に配設して発光させ、キャップに挿
入した先球ファイバの終端の出力をモニタしながら位置
合わせを行い、最大出力を得る位置で固定する。In order to implement this conventional fiber-lens coupling structure as a semiconductor light emitting device incorporating an optical fiber, the LEI
) Place the chip on the stem to emit light, adjust the position while monitoring the output at the end of the tip fiber inserted into the cap, and fix it at the position where the maximum output is obtained.
光通信システムの普及に伴って飛躍的に増大する近距離
通信などのために、ＬＥＤと光ファイバとを組み込んだ
半導体発光装置を十分な質と量で、かつ似顔な価格で提
供することが要望されている。There is a need to provide semiconductor light-emitting devices incorporating LEDs and optical fibers in sufficient quality and quantity, and at comparable prices, for short-distance communications, which are increasing dramatically with the spread of optical communication systems. has been done.
しかるにこの半導体発光装置で所定の結合効率を得るた
めには従来上述の様なＬＥＤチップと光ファイバとの位
置合わせが必要であって、結合効率の高い構造ではＬＥ
Ｄチップと光ファイバとの間の位置精度が厳しくてこの
工程が大きい負担とな１ており、上述の要望の実現を可
能とする改善が必要である。However, in order to obtain a predetermined coupling efficiency in this semiconductor light emitting device, it is necessary to align the LED chip and the optical fiber as described above, and in a structure with high coupling efficiency, the LED
The critical positional accuracy between the D-chip and the optical fiber makes this process a significant burden, and improvements are needed to make it possible to realize the above-mentioned requirements.
前記問題点は、発光ダイオード素子と光ファイバとを備
えて、該発光ダイオード素子の半導体基板が該素子の発
光波長に対して透明であり、該半導体基板に設けられた
円筒状の空洞に該光ファイバを嵌合することにより、該
光ファイバの該発光ダイオード素子に対する位置が制御
されてなる本発明による半導体発光装置により解決され
る。The problem is that the semiconductor substrate of the light emitting diode element is transparent to the wavelength of light emitted from the element, and that the light emitting diode element is equipped with a light emitting diode element and an optical fiber. The problem is solved by the semiconductor light emitting device according to the present invention, in which the position of the optical fiber with respect to the light emitting diode element is controlled by fitting the fibers together.
本発明による半導体発光装置は、例えば後述する実施例
の如く、発光波長に対して透明な発光ダイオード素子の
半導体基板に、発光軸と同軸で光ファイバの径に相当す
る円筒状の空洞を設け、この空洞に光ファイバを嵌合す
ることにより光ファイバの発光ダイオード素子に対する
位置を制御して、最大効率の結合が前記従来例の如き位
置合わせを行うことな（実現され、所要工数が大幅に削
減される。In the semiconductor light emitting device according to the present invention, for example, as in the embodiment described later, a cylindrical cavity coaxial with the light emitting axis and corresponding to the diameter of the optical fiber is provided in the semiconductor substrate of the light emitting diode element, which is transparent to the light emission wavelength. By fitting the optical fiber into this cavity, the position of the optical fiber with respect to the light emitting diode element can be controlled, and the maximum efficiency of coupling can be achieved without the need for positioning as in the conventional example, which greatly reduces the required man-hours. be done.
なおこの空洞の軸上で底面近傍に集光レンズを設けて結
合効率を向上することも可能である。Note that it is also possible to improve the coupling efficiency by providing a condenser lens near the bottom surface on the axis of this cavity.
この本発明の構造によれば、発光領域から光取り出し面
までの距離、従って光ファイバの入射端面までの距離を
前記従来例などより短縮することが可能であり、出射光
の拡がり径が小さいのみならず光ファイバ、集光レンズ
の位置の最適化が容易で高い結合効率が得られる。According to the structure of the present invention, it is possible to shorten the distance from the light emitting region to the light extraction surface, and therefore the distance to the input end face of the optical fiber, compared to the conventional example, and the spread diameter of the emitted light is only small. Therefore, it is easy to optimize the position of the optical fiber and the condensing lens, and high coupling efficiency can be obtained.
以下本発明を実施例により具体的に説明する。 The present invention will be specifically explained below using examples.
第１図（ａ）、（ｂ）は本発明の実施例を示す模式図で
あり、同図（ａ）において、■はｎ型１ｎＰ基板、２は
ｎ型１ｎＰクラッド層、３はＩｎＧａＡｓＰ活性層、３
Ａは発光領域、４はｐ型１ｎＰクラッド層、５はｐ型Ｉ
ｎＧａＡｓＰキャップ層、６はｎ側電極、７はｎ側電極
、８は絶縁膜、９は例えばＡｕめっきによるヒートシン
ク（ＰＩＩＳ） 、１０は光ファイバ、１１は集光レン
ズである。FIGS. 1(a) and (b) are schematic diagrams showing an embodiment of the present invention. In FIG. 1(a), ■ is an n-type 1nP substrate, 2 is an n-type 1nP cladding layer, and 3 is an InGaAsP active layer. ,3
A is a light emitting region, 4 is a p-type 1nP cladding layer, and 5 is a p-type I
An nGaAsP cap layer, 6 an n-side electrode, 7 an n-side electrode, 8 an insulating film, 9 a heat sink (PIIS) formed by, for example, Au plating, 10 an optical fiber, and 11 a condenser lens.
本実施例では光ファイバ１０として、例えばコア径５０
μｍ、クラツド径１２５μｍのものを組み込んでいる。In this embodiment, the optical fiber 10 has a core diameter of 50 mm, for example.
μm, and a cladding diameter of 125 μm is incorporated.
ＬＥＤはこの光ファイバ１０のクラツド径に対応して、
厚さを例えば約１５０μｍに研磨したＩｎＰ基板１の裏
面に先ず例えば直径約１３０−１深さ約５０ｐｍの第１
の空洞を形成し、ｎ側電極層として例えば金ゲルマニウ
ム／金（ＡｕＧｅ／＾Ｕ）をこの空洞の側面、底面を含
む全面に被着して、更に第１の空洞の底面に同軸で例え
ば直径約６０μｍ程度の第２の空洞を形成する。The LED corresponds to the clad diameter of this optical fiber 10,
First, a first layer with a diameter of about 130-1 and a depth of about 50 pm, for example, is formed on the back surface of an InP substrate 1 polished to a thickness of, for example, about 150 μm.
A cavity is formed, and a layer of, for example, gold germanium/gold (AuGe/^U) is deposited as an n-side electrode layer on the entire surface of the cavity, including the side and bottom surfaces. A second cavity of about 60 μm is formed.
次いでｒｎＧａＡｓＰキャップ層５上に、ｐ側電極７を
第２の空洞と同心で例えば直径約３０μｍの円形に例え
ば金／亜鉛／金（Ａｕ／Ｚｎ／Ａｕ）を積層して形成し
、例えばＳｉＯ２を厚さ約２００ｎｍに被覆して絶縁膜
８として、更に全面にＡｕを被着し篩めっきを厚さ例え
ば２μｍ程度に行ってＰＨ５９を形成する。Next, on the rnGaAsP cap layer 5, a p-side electrode 7 is formed by laminating, for example, gold/zinc/gold (Au/Zn/Au) in a circular shape with a diameter of about 30 μm concentrically with the second cavity, and is made of, for example, SiO2. The insulating film 8 is coated to a thickness of about 200 nm, and Au is further coated on the entire surface, and sieve plating is performed to a thickness of about 2 μm, for example, to form PH59.
集光レンズ１１は本実施例では例えばシリコン樹脂を前
記第２の空洞に注入して形成しており、その表面張力に
より曲率半径Ｒ＝１００〜２００ｐｍの凸面を得ている
。In this embodiment, the condenser lens 11 is formed by injecting, for example, silicone resin into the second cavity, and its surface tension provides a convex surface with a radius of curvature R of 100 to 200 pm.
第１図（ｂ）に例示する如く、このＬＥＤチップＩＡを
ステム１３上のヒートシンク１２に例えば金錫（ＡｕＳ
ｎ）ろう材を用いて接着する。次にキャップ１４をステ
ム１３に溶接した後に、フェルール１５に通した光ファ
イバ１０の先端をＬＥＤ≠ツブＩＡの前記第１の空洞に
第１図（ａ）に図示する様に挿入し、フェルール１５と
キャップ１４との間をはんだ或いは樹脂等で封止、固定
する。また１６はナイロンコートである。As illustrated in FIG. 1(b), this LED chip IA is mounted on the heat sink 12 on the stem 13 using, for example, gold-tin (AuS).
n) Adhesion using brazing material. Next, after welding the cap 14 to the stem 13, the tip of the optical fiber 10 passed through the ferrule 15 is inserted into the first cavity of the LED≠tube IA as shown in FIG. The space between the cap 14 and the cap 14 is sealed and fixed with solder, resin, or the like. Further, 16 is a nylon coat.
なお前記実施例では第２の空洞及び集光レンズ１１を設
けているが、本発明の半導体発光装置ではこれに代えて
、光取り出し面と光ファイバの入射端面とを高屈折率材
料で接着し、或いはこの空間に高屈折率材料を充填する
構造とすることも可能であり、これらの構造によっても
前記実施例に近い結合効率が得られる。In the above embodiment, the second cavity and the condensing lens 11 are provided, but in the semiconductor light emitting device of the present invention, instead of this, the light extraction surface and the input end surface of the optical fiber are bonded with a high refractive index material. Alternatively, it is also possible to adopt a structure in which this space is filled with a high refractive index material, and a coupling efficiency close to that of the above embodiment can also be obtained with these structures.
以上説明した如く本発明によれば、光ファイバの発光ダ
イオード素子に対する位置を、発光波長に対して透明な
半導体基板に設けた円筒状の空洞に光ファイバを嵌合す
ることにより制御して、光ファイバを備える半導体発光
装置の従来の製造プロセスで不可避とされた出力光をモ
ニタして行う位置合わせを不要とし、十分な質と量、か
つ低順な価格でこの半導体発光装置を提供することを可
能とするものである。As explained above, according to the present invention, the position of the optical fiber with respect to the light emitting diode element is controlled by fitting the optical fiber into a cylindrical cavity provided in a semiconductor substrate that is transparent to the emission wavelength. It is an object of the present invention to provide a semiconductor light emitting device of sufficient quality and quantity, and at a low price, without the need for alignment performed by monitoring the output light, which is unavoidable in the conventional manufacturing process of a semiconductor light emitting device equipped with a fiber. It is possible.
第１図（ａｌ、（ｂｌは本発明の実施例の模式図、第２
図は従来例の模式図である。
図において、
■はｎ型１ｎＰ基板、 ＩＡはＬＥＤチップ、２はｎ
型ＩｎＰクラッド層、
３はＩｎＧａＡｓＰ活性層、 ３Ａは発光領域、４はｐ
型ＩｎＰクラッド層、
５はｐ型１ｎＧａＡｓＰキャンプ層、
６はｎ側電極、 ７はｐ側電極、８は絶縁膜、
９はヒートシンクＰＨ３゜１０は光ファイバ
、 １１は集光レンズ、１２はヒートシンク、
１３はステム、１４はキャップ、 １５はフェル
ール、１６はナイロンコートを示す。
従来ヂグ・１の漠式図
蕃２図Figure 1 (al, (bl) is a schematic diagram of an embodiment of the present invention, Figure 2
The figure is a schematic diagram of a conventional example. In the figure, ■ is an n-type 1nP substrate, IA is an LED chip, and 2 is an n-type 1nP substrate.
InP type cladding layer, 3 is InGaAsP active layer, 3A is light emitting region, 4 is p
5 is a p-type 1nGaAsP camp layer, 6 is an n-side electrode, 7 is a p-side electrode, 8 is an insulating film,
9 is a heat sink PH3° 10 is an optical fiber, 11 is a condenser lens, 12 is a heat sink,
13 is a stem, 14 is a cap, 15 is a ferrule, and 16 is a nylon coat. Conventional Jigu 1 vague style illustration 2
Claims (1)
ダイオード素子の半導体基板が該素子の発光波長に対し
て透明であり、 該半導体基板に設けられた円筒状の空洞に該光ファイバ
を嵌合することにより、該光ファイバの該発光ダイオー
ド素子に対する位置が制御されてなることを特徴とする
半導体発光装置。[Scope of Claims] A light emitting diode element and an optical fiber are provided, a semiconductor substrate of the light emitting diode element is transparent to the emission wavelength of the element, and a cylindrical cavity provided in the semiconductor substrate is provided with a light emitting diode element and an optical fiber. A semiconductor light-emitting device characterized in that the position of the optical fiber relative to the light-emitting diode element is controlled by fitting the optical fiber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61281009A JPS63133683A (en) | 1986-11-26 | 1986-11-26 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61281009A JPS63133683A (en) | 1986-11-26 | 1986-11-26 | Semiconductor light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63133683A true JPS63133683A (en) | 1988-06-06 |
Family
ID=17633007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61281009A Pending JPS63133683A (en) | 1986-11-26 | 1986-11-26 | Semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63133683A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003076998A1 (en) * | 2002-03-08 | 2003-09-18 | Infineon Technologies Ag | Optoelectronic module and plug arrangement |
| JP2005251966A (en) * | 2004-03-04 | 2005-09-15 | Renesas Technology Corp | Semiconductor device and its manufacturing method |
-
1986
- 1986-11-26 JP JP61281009A patent/JPS63133683A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003076998A1 (en) * | 2002-03-08 | 2003-09-18 | Infineon Technologies Ag | Optoelectronic module and plug arrangement |
| US7371012B2 (en) | 2002-03-08 | 2008-05-13 | Infineon Technologies Ag | Optoelectronic module and plug arrangement |
| JP2005251966A (en) * | 2004-03-04 | 2005-09-15 | Renesas Technology Corp | Semiconductor device and its manufacturing method |
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