JPS63133524A - X-ray mask and manufacture thereof - Google Patents
X-ray mask and manufacture thereofInfo
- Publication number
- JPS63133524A JPS63133524A JP61280217A JP28021786A JPS63133524A JP S63133524 A JPS63133524 A JP S63133524A JP 61280217 A JP61280217 A JP 61280217A JP 28021786 A JP28021786 A JP 28021786A JP S63133524 A JPS63133524 A JP S63133524A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- ray mask
- resist
- patterns
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 7
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 7
- 239000006096 absorbing agent Substances 0.000 claims description 10
- 238000005468 ion implantation Methods 0.000 claims 5
- 238000010894 electron beam technology Methods 0.000 abstract description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052721 tungsten Inorganic materials 0.000 abstract description 11
- 239000010937 tungsten Substances 0.000 abstract description 11
- 229910052796 boron Inorganic materials 0.000 abstract description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 5
- 229910052681 coesite Inorganic materials 0.000 abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 230000001681 protective effect Effects 0.000 abstract description 3
- 229920001971 elastomer Polymers 0.000 abstract description 2
- 125000004122 cyclic group Chemical group 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- -1 Boron ions Chemical class 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229940117955 isoamyl acetate Drugs 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は４Ｘ線マスクおよびその製造方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a 4X-ray mask and a method for manufacturing the same.
従来の技術
半導体集積回路の高密度化に伴い、パターンは増々微細
化する情勢にあり、サブミクロンパターン露光技術の確
立が望まれている。従来から使用されている光露光では
、回折の影響があるためサブミクロンパターンの形成が
困難であり、電子ビーム、イオンビームあるいはＸ線を
用いた露光技術が開発されつつある。2. Description of the Related Art As the density of semiconductor integrated circuits increases, patterns are becoming increasingly finer, and it is desired to establish submicron pattern exposure technology. With conventionally used optical exposure, it is difficult to form submicron patterns due to the influence of diffraction, and exposure techniques using electron beams, ion beams, or X-rays are being developed.
これらを生産性の面から比較すると、電子ビーム露光お
よびイオン−ビーム露光に比べて、一括露光が可能であ
るＸ線露光が勝っており、実用的である。このＸ線露光
においては、Ｘ線マスクの製作が極めて１壷である。Comparing these from the viewpoint of productivity, X-ray exposure is superior to electron beam exposure and ion-beam exposure because it allows batch exposure, and is therefore more practical. In this X-ray exposure, the production of an X-ray mask is very simple.
第３図は従来のＸ線マスクが製作される過程を示した断
面図であり、従来のＸ線マスクとその製造方法を図面に
基づいて説明する。第３図（ａ）に示すように、Ｘ線マ
スク支持体となるシリコンウェハ１３の上に、Ｘ線透過
体１４を形成し、さらに。FIG. 3 is a sectional view showing the process of manufacturing a conventional X-ray mask, and the conventional X-ray mask and its manufacturing method will be explained based on the drawings. As shown in FIG. 3(a), an X-ray transmitting body 14 is formed on a silicon wafer 13 serving as an X-ray mask support.
この上にＸ線吸収体１６を形成する。次いで、第３図（
埒に示すように、所定形状のレジストパターン１６を形
成し、このレジストパターン開口部直下に位置するＸ線
吸収体１５をエツチングする。An X-ray absorber 16 is formed on this. Next, Figure 3 (
As shown in FIG. 2, a resist pattern 16 of a predetermined shape is formed, and the X-ray absorber 15 located directly below the opening of this resist pattern is etched.
以上の過程を経ることによって、第３図（ｃ）に示すみ
を残すことにより第３図（→に示すようなＸ線マスクが
得られる。By going through the above process, an X-ray mask as shown in FIG. 3 (→) can be obtained by leaving only the part shown in FIG. 3(c).
発明が解決しようとする問題点
Ｘ線透過体には、Ｘ線に対して高い透過率を有すること
、平坦度の面で優れていること、厚さが均一であること
、機械的強度が強く、熱膨張率が小さいこと、耐水性、
耐薬品性に優れていること、また、マスクの位置合わせ
のために、可視光に対する透明度が高いことなど極めて
多くの要求が課せられる。ところで、Ｘ線透過体の形成
材料は。Problems to be Solved by the Invention The X-ray transmissive body must have high transmittance to X-rays, excellent flatness, uniform thickness, and strong mechanical strength. , low coefficient of thermal expansion, water resistance,
There are many requirements such as excellent chemical resistance and high transparency to visible light for mask positioning. By the way, what is the material for forming the X-ray transmitter?
有機物と無機物とに大別できるが、マイラあるいはポリ
イミド等の有機物からなるＸ線透過体は量産性の点で優
れているが、温度や湿度の変化に対する寸法の安定性な
らびに耐薬品性で劣るという問題があった。一方、窒化
ケイ素ＳｉＮ％窒化ホウ素ＢＮあるいは二酸化ケイ素Ｓ
Ｌ０２等の膜からなる無機物Ｘ線透過体は１寸法の安
定性で優れているが、これらの膜応力を最適化する為の
膜形成条件の制御が難しいこと、可視光に対する透明度
を同時に最適化しなければならないこと、さらに、形成
膜に多くの欠陥が含まれることなどの間咀があった。X-ray transmissive materials can be broadly classified into organic materials and inorganic materials, but X-ray transmitters made of organic materials such as mylar or polyimide are superior in terms of mass production, but are said to be inferior in dimensional stability against changes in temperature and humidity and chemical resistance. There was a problem. On the other hand, silicon nitride SiN% boron nitride BN or silicon dioxide S
Inorganic X-ray transmitters made of films such as L02 have excellent stability in one dimension, but it is difficult to control the film formation conditions to optimize the stress of these films, and it is difficult to simultaneously optimize the transparency to visible light. Furthermore, there were problems such as the fact that the formed film contained many defects.
問題点を解決するだめの手段
この問題点を解決する為になされた本発明のＸ線マスク
の特徴は、Ｘ線マスクをＸ線マスク部を支持するＸ線マ
スク支持体およびＸ線透過体の双方を８１０２を用いて
構成し、しかも両者を一体型にした構造にある。また、
このＸ線マスクを！！作する方法の特徴は、Ｘ線マスク
支持体の外周枠として残される部分にイオン注入を行う
ところにある。Means for Solving the Problem The features of the X-ray mask of the present invention, which were made to solve this problem, are that the Both are constructed using 8102, and both are integrated. Also,
This X-ray mask! ! The feature of this method is that ions are implanted into the portion of the X-ray mask support that remains as the outer peripheral frame.
作 用
本発明によれば１機械的強度が強く、厚さが均一で、平
坦度、寸法安定性、耐水性、耐薬品性に優れ、かつ、可
視光に対する透明度も高いＸ線透過体を有するＸ線マス
クが実現される。Function: According to the present invention, 1. the material has an X-ray transmitting body that has strong mechanical strength, is uniform in thickness, has excellent flatness, dimensional stability, water resistance, and chemical resistance, and has high transparency to visible light. An X-ray mask is realized.
実施例 本発明の実施例について以下に詳細に説明する。Example Examples of the present invention will be described in detail below.
第１図は、本発明にかかるＸ線マスクの構造をｆｆ１Ｊ
示した断面図％第２図は、このＸ線マスクを製作する本
発明の製造方法の工程順断面図である。Figure 1 shows the structure of the X-ray mask according to the present invention.
The cross-sectional views shown in FIG. 2 are step-by-step cross-sectional views of the manufacturing method of the present invention for manufacturing this X-ray mask.
本発明のＸ線マスクは、第１図で示すように。The X-ray mask of the present invention is as shown in FIG.
５ｌＯ２のウェハを利用してＸ線マスク支持体となる外
周枠１２の部分およびＸ線透過体４が一体物として形成
され、この上に、Ｘ線吸収体パターン８が形成された構
造である。なお％Ｘ線透過体４は、 ５ｉｏ２ウエハ内
にイオンを注入することにより外周枠部分１２とは異質
な部分とされている。The structure is such that the outer frame 12 serving as the X-ray mask support and the X-ray transmitting body 4 are formed as a single body using a wafer of 5 lO2, and the X-ray absorbing body pattern 8 is formed thereon. Note that the X-ray transmitting body 4 is made different from the outer peripheral frame portion 12 by implanting ions into the 5io2 wafer.
第２図は、第１図で示した本発明のＸ線マスクを製造す
るだめの製造方法を説明するための工程順断面図である
。FIG. 2 is a step-by-step cross-sectional view for explaining a method of manufacturing the X-ray mask of the present invention shown in FIG.
本発明の製造方法では、先ず、第２図（ａ）で示すよう
に、直径が４インチのＳｌＯ□ウエノウニ板１（厚さ３
０６μｍ、平坦度１μｍ以内）の上に、ノボラック系ホ
トレジストを３μｍの厚さに塗布し、露光現像を行い、
３０ｒｍ角の開口部２をもつレジストパターン３を形成
する。次に、第２開山で示すように、このレジストパタ
ーン３をマスクとして開口部３の内部に露出するＳ １
０２ウエハ部分に、ボロンイオン３を２００ ＫｅＶの
エネルギーで約０．６μｍの厚さに打ち込み、ボロン打
ち込み層４を形成する。その後レジストパターン３を除
去する。In the manufacturing method of the present invention, first, as shown in FIG.
06 μm, flatness within 1 μm), a novolac photoresist is applied to a thickness of 3 μm, exposed and developed,
A resist pattern 3 having an opening 2 of 30 rm square is formed. Next, as shown by the second opening, S 1 is exposed inside the opening 3 using this resist pattern 3 as a mask.
Boron ions 3 are implanted into the 02 wafer portion to a thickness of about 0.6 μm with an energy of 200 KeV to form a boron implanted layer 4. After that, the resist pattern 3 is removed.
次に、第２図（→で示すように、厚さが１．０μｍのタ
ングステン膜６を高周波スパッタを用いて堆積し、さら
にこの上に厚さが０．４μｍの電子線レジスト層６を形
成する。なお、タングステン薄［６のスパッタ条件は、
放電ガスとしてアルゴンＡｒを用い、放電ガス圧３０ｍ
Ｔｏｒｒ 、高周波電カフ００Ｗである。また、電子線
用レジスト層６は塗布後に１２０”Ｃの温度で２０分間
のプリベーク処理を施して形成する。次いで、ボロン打
ち込み層４の形成域と対応する３０ｍｍ角の範囲内を電
子線描画したのち、酢酸イソアミル：エチルセロンルブ
＝１：４の現像液で１分間の現像処理を施すことで、第
２図（ｄ）に示すような所望の電子線用レジストパター
ン了を形成する。Next, as shown in FIG. 2 (→), a tungsten film 6 with a thickness of 1.0 μm is deposited using high frequency sputtering, and an electron beam resist layer 6 with a thickness of 0.4 μm is further formed on this film. The sputtering conditions for tungsten thin [6] are as follows:
Argon was used as the discharge gas, and the discharge gas pressure was 30 m.
Torr, high frequency electric cuff 00W. Further, the electron beam resist layer 6 is formed by performing a pre-baking process for 20 minutes at a temperature of 120"C after coating. Next, an electron beam drawing was performed within a 30 mm square area corresponding to the formation area of the boron implanted layer 4. Thereafter, a desired electron beam resist pattern as shown in FIG. 2(d) is formed by developing for 1 minute with a developer of isoamyl acetate:ethylceron lube=1:4.
次に、電子線用レジストパターン７をマスクとして用い
た反応性イオンエツチングによってタングステン膜５を
１０分間エツチングすることによって、第２図（ｅ）で
示すタングステンＸ線吸収体ノくターン８を形成する。Next, the tungsten film 5 is etched for 10 minutes by reactive ion etching using the electron beam resist pattern 7 as a mask, thereby forming the tungsten X-ray absorber nozzle 8 shown in FIG. 2(e). .
なお、この時のエツチング条件を１反応ガスとして、六
フッ化イオウＳＦ６：四塩化炭素Ｃ（Ｊ４：８：２の混
合ガスを用い、ガス流量ｅｃｃ／分で供給し、ガス圧力
１０ｍＴｏｒｒ。The etching conditions at this time were one reaction gas, a mixed gas of sulfur hexafluoride SF6: carbon tetrachloride C (J4:8:2), supplied at a gas flow rate ecc/min, and gas pressure 10 mTorr.
ＲＦ電力密度０．１２Ｗ／ｄ とすると、電子線用レ
ジストパターン７とタングステン膜６のエツチング速度
は、それぞれ４００人／ ｍ Ｌ ｎと１０００人／ｍ
ｉ ｎとなり、タングステンＸ線吸収体）（ターン８の
形成時に電子線用レジストノくターン７の除去がなされ
る。When the RF power density is 0.12 W/d, the etching rates of the electron beam resist pattern 7 and the tungsten film 6 are 400 people/m Ln and 1000 people/m, respectively.
When forming the tungsten X-ray absorber (turn 8), the electron beam resist (turn 7) is removed.
この後、第２図（ｆ）で示すようにタングステンＸ線吸
収体パターン８の形成された面側に保護膜としてポリイ
ミド膜９を塗布形成するとともに、ＳｉＯ。ウェハ１裏
面に、環化ゴム系のネガ型レジストを塗布し、さらに露
元現１象の処理を施してボロン打ち込み層４と対応する
面積の開口部１ｏを有するレジストパターン１１を形成
する。次にこのレジストパターン１０をマスクとして、
３１０２ウエハ１をフッ酸ＨＦにより、２６０分間にわ
たりエツチングしたのち、ポリイミド膜９とレジストパ
ターン１１を除くことにより、第１図で示した構造のＸ
線マスクを得ることができる。ところで、フッ酸による
Ｓ １０２ウエハ１とボロン打ち込み層４のエツチング
速度は、それぞれ１．２μｍ１％。Thereafter, as shown in FIG. 2(f), a polyimide film 9 is coated as a protective film on the side on which the tungsten X-ray absorber pattern 8 is formed, and SiO. A negative type resist of a cyclized rubber type is applied to the back surface of the wafer 1 and further subjected to an exposure phenomenon treatment to form a resist pattern 11 having an opening 1o of an area corresponding to the boron implanted layer 4. Next, using this resist pattern 10 as a mask,
After etching the 3102 wafer 1 with hydrofluoric acid HF for 260 minutes, the polyimide film 9 and the resist pattern 11 were removed to form the structure shown in FIG.
You can get a line mask. Incidentally, the etching rate of the S102 wafer 1 and the boron implanted layer 4 using hydrofluoric acid was 1.2 μm and 1%, respectively.
０．０２μｍ／分であり選択エツチングが十分に可能で
ある。The rate is 0.02 μm/min, and selective etching is sufficiently possible.
発明の効果
以上詳述したように、本発明のＸ線マスクはＸ線透過体
がＸ線マスク支持体の一部である一体型となっているた
め、機械的強度が高く、−！た、Ｘ線透過体を含め、Ｘ
線マスク支持体の全体が平坦度の点で優れた５１０２で
構成されているため歪みが少ない。さらに、 ５１０２
の熱膨張率が小さく、かつ、Ｘ線透過体と外周枠との熱
膨張率の差に起因する応力の発生がないので、温度変１
ヒに対して極めて安定であることは勿論のこと、耐水性
、耐薬品性にも優れ、その上、可視光に対しても透明で
ある。したがって、Ｘ線マスクに対して要求される諸条
件を満足するＸ線マスクが実現される。Effects of the Invention As detailed above, the X-ray mask of the present invention has high mechanical strength because the X-ray transmitting body is an integral part of the X-ray mask support. In addition,
Since the entire line mask support is made of 5102 which has excellent flatness, there is little distortion. Furthermore, 5102
has a small coefficient of thermal expansion, and no stress is generated due to the difference in coefficient of thermal expansion between the X-ray transmitting body and the outer frame, so temperature changes
It is of course extremely stable against humans, has excellent water resistance and chemical resistance, and is also transparent to visible light. Therefore, an X-ray mask that satisfies the various conditions required for an X-ray mask is realized.
第１図は本発明実施例のＸ線マスクの断面図。
第２図は本発明のＸ線マスクを製造する方法を説□明す
るだめの工程順断面図、第３図は従来のＸ線マスクの製
造方法を説明するための工程順断面図である。
１・・・・・・５１ｏ２ウエハ、２，１０・・・・・・
開口部、３．１１・・・・・・レジストパターン、４・
・・・・・ボロン打ち込みｊＫＸ線透過体）、６・・・
・・・タングステン膜、６・・・・・・電子線用レジス
ト層、７・・・・・・電子線用レジストパターン、８・
・・・・・タングステンＸ線吸収体ノリーン、９・・・
・・・ポリイミド膜、１２・・・・・・Ｘ線マスク支持
体となる外周枠。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
呼−Ｘ縄嬶県体FIG. 1 is a sectional view of an X-ray mask according to an embodiment of the present invention. FIG. 2 is a step-by-step cross-sectional view for explaining the method of manufacturing an X-ray mask of the present invention, and FIG. 3 is a step-by-step cross-sectional view for explaining a conventional method for manufacturing an X-ray mask. 1...51o2 wafer, 2,10...
Opening, 3.11...Resist pattern, 4.
... boron implanted jK X-ray transparent body), 6...
...Tungsten film, 6...Resist layer for electron beam, 7...Resist pattern for electron beam, 8.
...Tungsten X-ray absorber Noreen, 9...
. . . Polyimide membrane, 12 . . . Outer frame serving as an X-ray mask support. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Zuko - X rope prefectural body
Claims (2)
部が肉薄部とされ、同肉薄部をＸ線透過体となし、さら
に同Ｘ線透過体上にＸ線吸収体パターンが形成されてい
ることを特徴とするＸ線マスク。(1) The central part of the silicon dioxide base serving as the X-ray mask support is made into a thin part, the thin part is made into an X-ray transparent body, and an X-ray absorber pattern is further formed on the X-ray transparent body. An X-ray mask characterized by:
域にイオン注入層を形成したのち、表面上にＸ線吸収体
層を形成する工程、前記イオン注入層上のＸ線吸収体層
部分に選択エッチング処理を施し、Ｘ線吸収体パターン
を形成する工程、前記イオン注入層直下の二酸化ケイ素
基体部分をエッチングして除去し、イオン注入層をＸ線
透過体として残す工程を備えたことを特徴とするＸ線マ
スクの製造方法。(2) A step of forming an ion implantation layer in a predetermined area of a silicon dioxide base serving as an X-ray mask support, and then forming an X-ray absorber layer on the surface, a portion of the X-ray absorber layer on the ion implantation layer. The method further comprises a step of performing a selective etching treatment on the ion implantation layer to form an X-ray absorber pattern, and a step of etching and removing the silicon dioxide base portion immediately below the ion implantation layer, leaving the ion implantation layer as an X-ray transmitter. Characteristic method for manufacturing an X-ray mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61280217A JPS63133524A (en) | 1986-11-25 | 1986-11-25 | X-ray mask and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61280217A JPS63133524A (en) | 1986-11-25 | 1986-11-25 | X-ray mask and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63133524A true JPS63133524A (en) | 1988-06-06 |
Family
ID=17621944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61280217A Pending JPS63133524A (en) | 1986-11-25 | 1986-11-25 | X-ray mask and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63133524A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5321576A (en) * | 1976-08-11 | 1978-02-28 | Fujitsu Ltd | Mask for x-ray exposure |
| JPS5330277A (en) * | 1976-09-01 | 1978-03-22 | Fujitsu Ltd | Mask for x-ray exposure |
| JPS5349953A (en) * | 1976-10-18 | 1978-05-06 | Hitachi Ltd | Soft x-ray transcription mask |
| JPS53116783A (en) * | 1977-03-23 | 1978-10-12 | Fujitsu Ltd | Substrate straightening method |
-
1986
- 1986-11-25 JP JP61280217A patent/JPS63133524A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5321576A (en) * | 1976-08-11 | 1978-02-28 | Fujitsu Ltd | Mask for x-ray exposure |
| JPS5330277A (en) * | 1976-09-01 | 1978-03-22 | Fujitsu Ltd | Mask for x-ray exposure |
| JPS5349953A (en) * | 1976-10-18 | 1978-05-06 | Hitachi Ltd | Soft x-ray transcription mask |
| JPS53116783A (en) * | 1977-03-23 | 1978-10-12 | Fujitsu Ltd | Substrate straightening method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0020776B1 (en) | Method of forming patterns | |
| US4876164A (en) | Process for manufacturing a photomask | |
| JPS5851412B2 (en) | Microfabrication method for semiconductor devices | |
| KR100372073B1 (en) | Exposure mask, exposure mask manufacturing method, and semiconductor device manufacturing method using exposure mask | |
| JPS61273546A (en) | Production of metal silicide photomask | |
| JPS63133524A (en) | X-ray mask and manufacture thereof | |
| JPH0463349A (en) | Photomask blank and photomask | |
| JPH03116147A (en) | Photomask blank | |
| JP3319568B2 (en) | Plasma etching method | |
| JPH1078650A (en) | Aperture for charge beam plotter and its production | |
| JP2635322B2 (en) | X-ray mask manufacturing method | |
| JPS60123842A (en) | Production of photomask | |
| JPH0562888A (en) | X-ray mask and transferring method for pattern using the same | |
| JPH03182752A (en) | Formation of mask for exposing | |
| JPS63120420A (en) | Manufacture of x-ray mask | |
| JPS5968744A (en) | Manufacture of photomask | |
| JPH02273915A (en) | Manufacture of x-ray mask | |
| JPH05265189A (en) | Photomask and its production | |
| JPH0322686B2 (en) | ||
| JPS60207339A (en) | Pattern forming method | |
| JPS58207047A (en) | Production of mask | |
| JPS61245161A (en) | Manufacture of x-ray mask | |
| JPS6153725A (en) | Formation of mask for x-ray exposure | |
| JPH01183119A (en) | Preparation of x-ray mask | |
| JPS63291425A (en) | Etching |