JPS6312947A - Thermal conduction detector - Google Patents
Thermal conduction detectorInfo
- Publication number
- JPS6312947A JPS6312947A JP15740386A JP15740386A JPS6312947A JP S6312947 A JPS6312947 A JP S6312947A JP 15740386 A JP15740386 A JP 15740386A JP 15740386 A JP15740386 A JP 15740386A JP S6312947 A JPS6312947 A JP S6312947A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- slit
- resistance part
- thin
- heat dissipation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 239000011521 glass Substances 0.000 claims abstract description 17
- 230000001681 protective effect Effects 0.000 claims abstract description 4
- 230000017525 heat dissipation Effects 0.000 claims description 22
- 101700004678 SLIT3 Proteins 0.000 abstract description 9
- 102100027339 Slit homolog 3 protein Human genes 0.000 abstract description 9
- 238000004868 gas analysis Methods 0.000 abstract description 5
- 238000001514 detection method Methods 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 abstract 2
- 238000000059 patterning Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical group C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、ガス中のメタンやエタン等の組成を検知する
ための微細加工のシリコン・ウェハーチップとガラス板
から成るガス分析装置における熱伝導検出器に関する。Detailed Description of the Invention (Industrial Application Field) The present invention relates to heat conduction in a gas analyzer consisting of a microfabricated silicon wafer chip and a glass plate for detecting the composition of methane, ethane, etc. in gas. Regarding the detector.
（従来技術及び問題点）
熱時定数が１−ｓｅｃより小さいシリコン・ウェハーチ
ップ微細加工の熱伝導検出器（Ｔｈｅｒｍａｌ Ｃｏｎ
ｄｕｅｔａｎｃｅ Ｄｅｔｅｃｔｏｒ 以下「ＴＣＤ
」という、）にあっては、幅０ 、５ ａｍ、長さＩＩ
程度の長方形断面を有するガス通路内に配設されるが、
かかるガス通路内には内径φ０．３の直立したステンレ
スパイプからガスを供給する。その場合に、ガス通路と
パイプが直交するため、パイプから高速に供給されるが
スがガス通路内のがス流を乱す。乱された状態で、ガス
流がＴＣＤを通過するとガス分析波形が理想的な〃ウス
分布を乱し、２成分〃ス分離度を悪くする問題があった
。(Prior art and problems) A thermal conduction detector (Thermal Con
duetance Detector (hereinafter referred to as “TCD”)
'', width 0, 5 am, length II
Although it is arranged in a gas passage having a rectangular cross section of about
Gas is supplied into this gas passage from an upright stainless steel pipe with an inner diameter of φ0.3. In this case, since the gas passage and the pipe are perpendicular to each other, the gas supplied from the pipe at high speed disturbs the gas flow in the gas passage. When the gas flow passes through the TCD in a turbulent state, the gas analysis waveform disturbs the ideal gas distribution, resulting in a problem of poor two-component gas separation.
（発明の目的）
本発明は、このような問題点を解消するものであり、放
熱抵抗部のガス流の上下流にガス流を整流するためのス
リットを具備する熱伝導検出器を提供することを目的と
する。(Object of the Invention) The present invention solves these problems, and provides a thermal conduction detector having slits for rectifying the gas flow upstream and downstream of the heat dissipation resistor. With the goal.
（発明の構成）
本発明の構成を概説すると、本発明は放熱抵抗部を配設
したシリコン・ウェハーチップと、〃人通路用の細溝及
び細穴を具備するガラス板と、前記シリコン・ウェハー
チップ保護用がラス板とから成り、前記シリコン・ウェ
ハーチップの放熱抵抗部とガス通路用の細溝を符合させ
て前記シリコン、ウェハーチップとガラス板、さらに前
記シリコン・ウェハーチップの反対面に前記保護用ガラ
ス板を積層し、固定治具を介して着脱自由に圧着して成
る熱伝導検出器である。前記シリコン・ワヱ２、−チッ
プに配設した放熱抵抗部の近傍に前記シリコン・ウェハ
ーチップとガラス板の積層によって形成されるガス通路
内にスリットを具備したことを特徴とする。また、ガラ
ス板に配設したガス通過用穴及び細溝を介して通過する
ガス流が、放熱抵抗部が配設されているガス通路に対し
て高速にかつ垂直に流入するため、１人通路内のガス流
が乱れ、それによってガス分析波形が理想的な〃ウス分
布を乱すことのないように、放熱抵抗部の近傍にスリッ
トを設はガス流を整流する特徴を有する。(Structure of the Invention) To summarize the structure of the present invention, the present invention comprises a silicon wafer chip provided with a heat dissipation resistor, a glass plate provided with narrow grooves and holes for passage of people, and the silicon wafer chip. The chip protection consists of a lath plate, and the heat dissipation resistor part of the silicon wafer chip and the narrow groove for the gas passage are aligned, and the silicon wafer chip and the glass plate are further covered with the glass plate on the opposite side of the silicon wafer chip. This is a thermal conduction detector made by laminating protective glass plates and press-bonding them via a fixing jig so that they can be freely attached and detached. The silicon wafer chip is characterized in that a slit is provided in the gas passage formed by laminating the silicon wafer chip and the glass plate in the vicinity of the heat dissipation resistor portion disposed on the silicon wafer chip. In addition, since the gas flow passing through the gas passage holes and narrow grooves provided in the glass plate flows at high speed and perpendicularly to the gas passage where the heat dissipation resistor is provided, the single-person passage A slit is provided near the heat dissipation resistor to rectify the gas flow so that the gas flow within the heat dissipation resistor section is not disturbed and thereby the gas analysis waveform does not disturb the ideal cross distribution.
（発明の実施例） 本発明の構成及び実施例を図面に基づき説明する。(Example of the invention) The configuration and embodiments of the present invention will be described based on the drawings.
第１図は本発明に係る放熱抵抗部の近傍であってガス通
路内にスリットを具備するシリコン・ウェハーチップの
平面図である。第２図は本発明の構成及び実施例を示す
断面図である。FIG. 1 is a plan view of a silicon wafer chip having a slit in a gas passage in the vicinity of a heat dissipation resistor section according to the present invention. FIG. 2 is a sectional view showing the configuration and embodiment of the present invention.
第１図において、１はシリコン・ウェハーチップ、２は
放熱抵抗部、３は放熱抵抗部２の近傍であって、後記細
溝及び細穴を具備したガラス板４とシリコン・ウェハー
チップ１を圧着した際にガス通路５ａを形成する場合の
当該ガス通路５ａに相当する箇所に形成した１本又は複
数本のスリットである。放熱抵抗部２はＮｉ薄膜であり
抵抗値１００Ωである。Ｎｉその他の金属ｍｉｘでシリ
コン・ウェハーチップ１に放熱抵抗部２を蒸着形成する
場合は、半導体プロセスのパターニング工程を利用して
形成する。パターニングの工程で放熱抵抗部２のパター
ニングとスリット３のパターニングを同時に行なってス
リット３を蒸着形成し、その後金属ｉｇ！を薬品（例え
ば硝酸５、酢酸５、硫酸２、水１（重量比））で処理し
て形を整える。In FIG. 1, 1 is a silicon wafer chip, 2 is a heat dissipation resistor part, and 3 is the vicinity of the heat dissipation resistor part 2, and the silicon wafer chip 1 is bonded to a glass plate 4 having thin grooves and holes described later. This is one or more slits formed at a location corresponding to the gas passage 5a when the gas passage 5a is formed. The heat dissipation resistor section 2 is a Ni thin film and has a resistance value of 100Ω. When forming the heat dissipation resistor part 2 on the silicon wafer chip 1 by vapor deposition using a mixture of Ni and other metals, it is formed using a patterning step of a semiconductor process. In the patterning process, the patterning of the heat dissipation resistor part 2 and the patterning of the slit 3 are performed simultaneously to form the slit 3 by vapor deposition, and then the metal ig! It is shaped by treating it with chemicals (for example, 5 parts of nitric acid, 5 parts of acetic acid, 2 parts of sulfuric acid, and 1 part of water (weight ratio)).
次に本発明の実施例を第２図に基づき説明する。Next, an embodiment of the present invention will be described based on FIG.
放熱抵抗部−２及びスリット３を形成したシリコン、ウ
ェハーチップ１に対し、ガス通路用細大４ａ。For the silicon wafer chip 1 on which the heat dissipation resistor part 2 and the slit 3 are formed, the narrow size 4a for the gas passage.
４ｂとガス通路用細溝５をＡｎするガラス板４を積層し
て圧着する。放熱抵抗部２及びスリット３と細溝５とは
、ガスを細大４ ａ、 ４ ｂを介して流出入させる際
に、ガスが放熱抵抗部２及びスリｚト３を通過するよう
に符合させ積層してガス通路５ａを形成する。さらに、
シリコン・ウェハーチップ１の反対面には、保護用ガラ
ス板６を圧着する。4b and the glass plate 4 which forms the gas passage narrow groove 5 are laminated and pressure-bonded. The heat dissipation resistor part 2, the slit 3, and the narrow groove 5 are aligned so that the gas passes through the heat dissipation resistor part 2 and the slit 3 when the gas flows in and out through the narrow diameters 4a and 4b. They are stacked to form a gas passage 5a. moreover,
A protective glass plate 6 is pressure-bonded to the opposite surface of the silicon wafer chip 1.
ガスは細穴４ ａ、 ４ ｂに嵌入させたパイプ７を介
して細穴４ａさらに細溝５・ガス通路５ａを通過して細
穴４ｂから流出する（矢印参照）、ガス成分分析は、ガ
スが放熱抵抗部２を通過する際に放熱抵抗ｎ２により温
度を検出し、温度検出結果を外部分析装置（図示せず）
により解析することにより行なわれる。The gas passes through the pipe 7 fitted into the small holes 4a and 4b, passes through the small hole 4a, the small groove 5 and the gas passage 5a, and flows out from the small hole 4b (see arrow). When passing through the heat dissipation resistor part 2, the temperature is detected by the heat dissipation resistor n2, and the temperature detection result is sent to an external analyzer (not shown).
This is done by analyzing.
パイプ７はステンレス製で内径φ０．３鴎輸であり、パ
イプ７から細溝５を介して垂直にガスを流入するると、
シリコン・ウェハーチップ１とガラス板４の細溝５によ
って形成される〃ス通路りａ内でガス流が乱されるのを
スリット３により整流する。 本発明に係るシリコン・
ウエノＡ−チップ１とガラス板４，６は固定治具８（ボ
ルトナツト）により圧着固定し、固定油１４ｃ８を解除
するとシリコン・ウェハーチップ１とガラス板４，６は
自由に分解することができ、部品交換を行なうこともで
きる。The pipe 7 is made of stainless steel and has an inner diameter of φ0.3, and when gas is introduced vertically from the pipe 7 through the narrow groove 5,
The slit 3 rectifies the turbulent gas flow within the gas passage a formed by the narrow grooves 5 of the silicon wafer chip 1 and the glass plate 4. Silicon according to the present invention
The Ueno A-chip 1 and the glass plates 4 and 6 are crimped and fixed using a fixing jig 8 (bolts and nuts), and when the fixing oil 14c8 is released, the silicon wafer chip 1 and the glass plates 4 and 6 can be freely disassembled. Parts can also be replaced.
第３図は、本発明の他の実施例を示す図であり、シリコ
ン・ウェハ−チップ１自体に化学的研摩法によりスリッ
ト用の細溝を形成した状態を示す。FIG. 3 is a diagram showing another embodiment of the present invention, in which narrow grooves for slits have been formed in the silicon wafer chip 1 itself by chemical polishing.
スリ７）３を細溝で形成することにより、パイプ７から
高速にかつ垂直に流入するガス流によって第１図に示す
′ｉｌｋ着した薄膜スリットを剥離させるおそれもない
。By forming the slit 7) 3 as a narrow groove, there is no fear that the thin film slit shown in FIG.
（発明の効果）
本発明は以上の構成であるから、放熱抵抗部を通過する
ガス流は、放熱抵抗部近傍に配設したスリットにより整
流できるため、高精度のガス分析検出を行なうことがで
きる。(Effects of the Invention) Since the present invention has the above configuration, the gas flow passing through the heat dissipation resistor can be rectified by the slit provided near the heat dissipation resistor, so that highly accurate gas analysis and detection can be performed. .
第１図は、本発明の構成を示す平面図、第２図は本発明
の実施例を示す断面図である。FIG. 1 is a plan view showing the configuration of the present invention, and FIG. 2 is a sectional view showing an embodiment of the present invention.
Claims (1)
抗部と該放熱抵抗部の近傍にスリットを具備するシリコ
ン・ウェハーチップと、 保護用ガラス板とを積層し、固定治具を介して着脱自由
に圧着して成ることを特徴とする熱伝導検出器。[Claims] A glass plate having narrow grooves and holes for gas passages, a silicon wafer chip having a heat dissipation resistor and a slit near the heat dissipation resistor, and a protective glass plate are laminated. , a thermal conduction detector characterized in that it is crimped to be freely attached and detached via a fixing jig.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15740386A JPS6312947A (en) | 1986-07-04 | 1986-07-04 | Thermal conduction detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15740386A JPS6312947A (en) | 1986-07-04 | 1986-07-04 | Thermal conduction detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6312947A true JPS6312947A (en) | 1988-01-20 |
Family
ID=15648870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15740386A Pending JPS6312947A (en) | 1986-07-04 | 1986-07-04 | Thermal conduction detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6312947A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0288786A (en) * | 1988-09-26 | 1990-03-28 | Showa Denko Kk | Production of high purity metal or alloy |
| JPH02101186A (en) * | 1988-10-05 | 1990-04-12 | Showa Denko Kk | Production of nd-fe alloy or metallic nd |
| JPH0552782A (en) * | 1991-08-21 | 1993-03-02 | Yamatake Honeywell Co Ltd | Heat conductivity detector |
-
1986
- 1986-07-04 JP JP15740386A patent/JPS6312947A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0288786A (en) * | 1988-09-26 | 1990-03-28 | Showa Denko Kk | Production of high purity metal or alloy |
| JPH0696787B2 (en) * | 1988-09-26 | 1994-11-30 | 昭和電工株式会社 | Method for producing high-purity metal or alloy |
| JPH02101186A (en) * | 1988-10-05 | 1990-04-12 | Showa Denko Kk | Production of nd-fe alloy or metallic nd |
| JPH0552782A (en) * | 1991-08-21 | 1993-03-02 | Yamatake Honeywell Co Ltd | Heat conductivity detector |
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