JPH0422269Y2 - - Google Patents
Info
- Publication number
- JPH0422269Y2 JPH0422269Y2 JP6216984U JP6216984U JPH0422269Y2 JP H0422269 Y2 JPH0422269 Y2 JP H0422269Y2 JP 6216984 U JP6216984 U JP 6216984U JP 6216984 U JP6216984 U JP 6216984U JP H0422269 Y2 JPH0422269 Y2 JP H0422269Y2
- Authority
- JP
- Japan
- Prior art keywords
- heat
- resistor
- flow
- flow rate
- detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012530 fluid Substances 0.000 claims description 13
- 238000001514 detection method Methods 0.000 claims description 8
- 238000005192 partition Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 229920000114 Corrugated plastic Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Measuring Volume Flow (AREA)
Description
【考案の詳細な説明】 技術分野 本考案は感熱抵抗型流量検出装置に関する。[Detailed explanation of the idea] Technical field The present invention relates to a heat-sensitive resistance type flow rate detection device.
従来技術
感熱抵抗型流量検出装置として、極細白金線を
用いた熱線流量計が従来から知られている。又、
白金線の代りに薄膜抵抗体を用いた流量検出器が
例えば特開昭57−92211号公報や特開昭57−93212
号公報から知られている。さらに、最近、薄膜抵
抗体をシリコン基材上に付着形成させる技術が開
発され、流体の流量検出精度が著しく向上した。
このようにシリンコン基材チツプにより形成され
た流量検出器は支持体により流体流通管に取付け
られねばならない。又、このような流量検出器に
よる流量検出精度をさらに高めるためには、検出
器チツプが流体の最も安定した流れの中に配置さ
れる必要がある。そして、このような検出器チツ
プは比較的小型であるので、これを比較的大径の
流通管に取付けるときには支持体自身が流体の流
れを乱すようなものであつてはならない。Prior Art A hot wire flowmeter using an ultra-fine platinum wire has been known as a heat-sensitive resistance flow rate detection device. or,
Flow rate detectors using thin film resistors instead of platinum wires are disclosed in, for example, Japanese Patent Laid-Open No. 57-92211 and Japanese Patent Laid-open No. 57-93212.
It is known from the publication no. Furthermore, a technique for depositing a thin film resistor on a silicon substrate has recently been developed, which has significantly improved the accuracy of fluid flow rate detection.
A flow sensor thus formed from a silicon-based chip must be attached to the fluid flow tube by a support. Furthermore, in order to further improve the accuracy of flow rate detection by such a flow rate detector, the detector chip must be placed in the most stable flow of fluid. Since such a detector chip is relatively small, when it is attached to a relatively large diameter flow pipe, the support itself must not disturb the flow of fluid.
考案の目的
本考案の目的は前述したようなチツプ化された
流量検出器が比較的大径の流通管にも簡単に取付
けられて精度の高い流量検出を行うことのできる
流量検出装置を提供することにある。Purpose of the invention The purpose of the present invention is to provide a flow rate detection device in which a chipped flow rate detector as described above can be easily attached to a relatively large-diameter flow pipe and can perform highly accurate flow rate detection. There is a particular thing.
考案の構成
本考案においては、流体流通管の一部を仕切壁
によつて複数個の流路を有するハニカム状に形成
し、これらの流路のうちの少くとも一個の流路に
薄膜状発熱用抵抗体とこの発熱用抵抗体からの熱
を感じる感熱抵抗体とを付着せしめてなる流量検
出器を配置したことを特徴とする。Structure of the invention In the present invention, a part of the fluid flow pipe is formed into a honeycomb shape having a plurality of flow channels by partition walls, and at least one of these flow channels is provided with a thin film-like heat generating layer. The present invention is characterized in that a flow rate detector is disposed in which a heat-sensitive resistor and a heat-sensitive resistor that senses heat from the heat-generating resistor are attached.
実施例の説明
以下本考案の実施例について図面を参照して説
明する。DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第1図及び第2図において、流体流通管1の途
中にガスケツト2を介して正方形断面の検出器支
持管3が取付けられている。支持管3内にはハニ
カム構造体4が取付けられており、ハニカム構造
体4の仕切壁5により複数個の流路6が形成され
る。流路6はほぼ一様な断面積で流通管1で平行
に延び、矢印Fで示される流体を大きな流れ抵抗
を与えることなく通過させる。ハニカム構造体4
の流路6の一つに流量検出器7が取付けられ、さ
らに他の流路6に他の流量検出器8が取付けられ
る。ハニカム構造体4の前後にはアルミニウム等
の金属の金網9が配置される。 In FIGS. 1 and 2, a detector support tube 3 having a square cross section is attached in the middle of a fluid flow tube 1 with a gasket 2 interposed therebetween. A honeycomb structure 4 is attached within the support tube 3, and a plurality of flow channels 6 are formed by partition walls 5 of the honeycomb structure 4. The flow channels 6 extend parallel to the flow tube 1 with a substantially uniform cross-sectional area and allow the fluid indicated by the arrow F to pass therethrough without providing significant flow resistance. Honeycomb structure 4
A flow rate detector 7 is attached to one of the channels 6, and another flow rate detector 8 is attached to the other channel 6. A wire mesh 9 made of metal such as aluminum is placed before and after the honeycomb structure 4.
第3図は流量検出器7の平面図、第4図はその
断面図である。第3図及び第4図において、流量
検出器7はシリコン結晶ウエハを基材10とした
チツプにより形成され、シリコン基材10上面に
二酸化珪素等の絶縁膜11が形成され、さらにそ
の上面に所定のパターンで二条の抵抗体12,1
3が薄膜状に付着される。抵抗体12,13の付
着にはフオトリソグラフイー及びエツチングを用
いると正確な抵抗値を設定することができる。流
れFに対して上流側に配置されるべく意図された
抵抗体12はニツケルクロムで作られ、下流側の
抵抗体13はニツケルから作られる。ニツケルは
ニツケルクロムよりより抵抗の温度係数が大きい
ために、熱を感じて抵抗の変化が敏感である。然
して、上流側の抵抗体12を発熱用抵抗体として
これに電流を流して発熱させ、この発熱用抵抗体
12の温度が流された流体の流量に応じて変化す
るのを、下流側の感熱抵抗体13が感じてその抵
抗値の変化を測定することにより流量が検出され
る。発熱用抵抗体12の熱の大部分はシリコン基
材10を介して感熱抵抗体13に伝達され、残り
の小部分が流体の流れに乗つて伝達される。この
検出器7は非常に高精度であり、且つ量産に適し
たものである。各抵抗体12,13の各端部には
金のボンデイングパツド14が接合される。他方
の検出器8には感熱抵抗体13と同様の抵抗体1
5が付着される。この検出器8は発熱用抵抗体1
2の熱の影響を受けないように配置されるのが好
ましく、従つて、第1図及び第2図に示されるよ
うに、それぞれ別の流路6に配置される。この感
熱抵抗体15は流通管1を通る流体の温度を感じ
て、感熱抵抗体13のための流体の温度変化に対
する補償を行い、そのためにこれらの感熱抵抗体
13,15は公知のブリツジ回路に接続される。
又、検出器チツプ7の寸法は例えば7mm×5mmの
矩形状であり、検出器チツプ8はチツプ7よりわ
ずかに小さい。 FIG. 3 is a plan view of the flow rate detector 7, and FIG. 4 is a sectional view thereof. In FIGS. 3 and 4, the flow rate detector 7 is formed of a chip using a silicon crystal wafer as a base material 10, an insulating film 11 made of silicon dioxide or the like is formed on the upper surface of the silicon base material 10, and a predetermined area is further formed on the upper surface of the insulating film 11. Two resistors 12, 1 in the pattern
3 is deposited in a thin film. If photolithography and etching are used to attach the resistors 12 and 13, accurate resistance values can be set. The resistor 12 intended to be arranged upstream with respect to the flow F is made of nickel chrome, and the downstream resistor 13 is made of nickel. Nickel has a larger temperature coefficient of resistance than nickel chrome, so it is sensitive to changes in resistance when it senses heat. Therefore, the upstream resistor 12 is used as a heat-generating resistor, and a current is passed through it to generate heat, and the temperature of the heat-generating resistor 12 changes in accordance with the flow rate of the fluid flowing through it. The flow rate is detected by sensing the resistance of the resistor 13 and measuring the change in its resistance value. Most of the heat from the heat generating resistor 12 is transferred to the heat sensitive resistor 13 via the silicon base material 10, and the remaining small portion is transferred along with the flow of fluid. This detector 7 has extremely high precision and is suitable for mass production. A gold bonding pad 14 is bonded to each end of each resistor 12,13. The other detector 8 has a resistor 1 similar to the heat-sensitive resistor 13.
5 is attached. This detector 8 is a heating resistor 1
They are preferably arranged so as not to be affected by the heat of the two, and are therefore arranged in separate flow paths 6, as shown in FIGS. 1 and 2. This heat-sensitive resistor 15 senses the temperature of the fluid passing through the flow pipe 1 and compensates for temperature changes in the fluid for the heat-sensitive resistor 13, for which purpose these heat-sensitive resistors 13, 15 are connected to a known bridge circuit. Connected.
Further, the detector chip 7 has a rectangular shape of, for example, 7 mm x 5 mm, and the detector chip 8 is slightly smaller than the chip 7.
第1図及び第2図において、ハニカム構造体4
の仕切壁5は耐熱プラスチツクにより作られ、ハ
ニカム構造体4は波形プラスチツクシートを積
層、接合して作られる。従つて、接合前に、波形
シートに破線で示されるように導電リード16,
17を埋設しておけば、検出器チツプ7,8の各
抵抗体12,13,15を外部の電気装置に接続
することができる。或いは、薄膜状のリード層を
付着せしめておくこともできる。従つて、検出器
チツプ7,8をハニカム構造4のどの位置に配置
しても、電気接続に関しては何らの問題もない。
検出器チツプ7,8は接着剤等により容易に仕切
壁5に固着されることができる。尚、金網9は検
出器7,8に対する外部からの電気的ノイズをシ
ールドするものである。 In FIGS. 1 and 2, the honeycomb structure 4
The partition walls 5 are made of heat-resistant plastic, and the honeycomb structure 4 is made by laminating and bonding corrugated plastic sheets. Therefore, before joining, conductive leads 16,
17, each resistor 12, 13, 15 of the detector chips 7, 8 can be connected to an external electrical device. Alternatively, a thin lead layer may be attached. Therefore, no matter where the detector chips 7, 8 are placed in the honeycomb structure 4, there is no problem with regard to electrical connection.
The detector chips 7, 8 can be easily fixed to the partition wall 5 with adhesive or the like. The wire mesh 9 serves to shield the detectors 7 and 8 from electrical noise from the outside.
考案の効果
以上説明したように、検出器チツプ7,8は大
径の流通管であつても簡単且つ確実に所望の位置
に取付けられることができ、検出器チツプに向か
つて流れる流体は検出器チツプが配置された流路
内に整流され、従つて安定した流れの中で流量検
出ができることになり、精度の高い流量検出がで
きる。Effects of the invention As explained above, the detector chips 7 and 8 can be easily and reliably installed at the desired position even in a large-diameter flow pipe, and the fluid flowing toward the detector chips is The flow is rectified in the flow path in which the chip is placed, and therefore the flow rate can be detected in a stable flow, making it possible to detect the flow rate with high accuracy.
第1図は本考案による流量検出装置の横断面
図、第2図は第1図の線−に沿つた断面図、
第3図は第1図の一方の検出器の平面図、第4図
は第3図の拡大断面図、第5図は他方の検出器の
平面図である。
1……流通管、4……ハニカム構造体、5……
仕切壁、6……流路、7,8……検出器、12…
…発熱用抵抗体、13……感熱抵抗体。
FIG. 1 is a cross-sectional view of the flow rate detection device according to the present invention, FIG. 2 is a cross-sectional view taken along the line - of FIG. 1,
3 is a plan view of one of the detectors shown in FIG. 1, FIG. 4 is an enlarged sectional view of FIG. 3, and FIG. 5 is a plan view of the other detector. 1... Distribution pipe, 4... Honeycomb structure, 5...
Partition wall, 6... Channel, 7, 8... Detector, 12...
...Heating resistor, 13...Heat-sensitive resistor.
Claims (1)
路を有するハニカム状に形成し、該複数個の流路
のうちの少くとも一個の流路に薄膜状発熱用抵抗
体と該発熱用抵抗体からの熱を感じる感熱抵抗体
とを付着せしめてなる流量検出器を配置したこと
を特徴とする流量検出装置。 A part of the fluid flow pipe is formed into a honeycomb shape having a plurality of flow channels by partition walls, and at least one of the plurality of flow channels is provided with a thin film heat generating resistor and the heat generating resistor. What is claimed is: 1. A flow rate detection device comprising a flow rate detector attached with a heat-sensitive resistor that senses heat from the resistor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6216984U JPS60174836U (en) | 1984-04-28 | 1984-04-28 | flow rate detection device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6216984U JPS60174836U (en) | 1984-04-28 | 1984-04-28 | flow rate detection device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60174836U JPS60174836U (en) | 1985-11-19 |
JPH0422269Y2 true JPH0422269Y2 (en) | 1992-05-21 |
Family
ID=30591126
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6216984U Granted JPS60174836U (en) | 1984-04-28 | 1984-04-28 | flow rate detection device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60174836U (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2571720B2 (en) * | 1990-07-10 | 1997-01-16 | 山武ハネウエル株式会社 | Flowmeter |
JP2005003534A (en) * | 2003-06-12 | 2005-01-06 | Tokyo Gas Co Ltd | Flow regulating instrument |
JP4719075B2 (en) * | 2006-05-08 | 2011-07-06 | 矢崎総業株式会社 | Flowmeter |
JP5014178B2 (en) * | 2008-01-24 | 2012-08-29 | アズビル株式会社 | Gas meter |
-
1984
- 1984-04-28 JP JP6216984U patent/JPS60174836U/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60174836U (en) | 1985-11-19 |
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