JPH0522849B2 - - Google Patents
Info
- Publication number
- JPH0522849B2 JPH0522849B2 JP59085115A JP8511584A JPH0522849B2 JP H0522849 B2 JPH0522849 B2 JP H0522849B2 JP 59085115 A JP59085115 A JP 59085115A JP 8511584 A JP8511584 A JP 8511584A JP H0522849 B2 JPH0522849 B2 JP H0522849B2
- Authority
- JP
- Japan
- Prior art keywords
- flow rate
- heat
- chip
- lead frame
- detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012530 fluid Substances 0.000 claims description 19
- 238000001514 detection method Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 210000000887 face Anatomy 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 210000000720 eyelash Anatomy 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
Description
【発明の詳細な説明】 技術分野 本発明は感熱抵抗型流量検出装置に係る。[Detailed description of the invention] Technical field The present invention relates to a heat-sensitive resistance type flow rate detection device.
従来技術
感熱抵抗型流量検出器として熱線流量計が従来
から知られており、これは極細白金線等を加熱し
ておくと、流量に応じて加熱白金線等の温度が低
下しそのときの抵抗の変化を測定することにより
流量を検出するという原理に基くものである。こ
の原理をさらに発展させて、加熱される抵抗素子
と温度検出のための抵抗素子を別個に構成してこ
れらを一チツプとして製造したものが例えば特開
昭57−93212号公報及び特開昭57−93211号公報に
記載されている。これらの流量検出器は支柱によ
り流体流通管に機械的に支持され且つリード線に
より外部電気装置に電気的に接続されている。Conventional technology A hot wire flow meter has been known as a heat-sensitive resistance flow rate detector, and when an ultra-fine platinum wire is heated, the temperature of the heated platinum wire decreases in accordance with the flow rate, and the resistance at that time decreases. It is based on the principle that the flow rate is detected by measuring the change in the flow rate. This principle was further developed, and a resistive element to be heated and a resistive element for temperature detection were constructed separately and manufactured as a single chip, for example, in JP-A-57-93212 and JP-A-57. -Described in Publication No. 93211. These flow rate detectors are mechanically supported on the fluid flow tubes by struts and electrically connected to external electrical devices by leads.
チツプとして形成された感熱抵抗型流量検出器
を機械的に支持し且つ電気的に接続して耐久的且
つ高精度の検出を行うためには次のことが留意さ
れなければならない。まず第１に、このようなチ
ツプ基材はセラミツクやシリコン等により形成さ
れるために振動やねじれ等の機械的応力に弱いこ
と、次に、熱に係る検出器として、検出器と電気
装置との間を結ぶリード線の温度勾配が電気装置
側において常温となつていること、さらに、検出
すべき流体の流れをできるだけ妨げないこと、等
が重要である。上述した先行技術は検出器自体の
性能向上を目指したものであつて上記した留意事
項についての考察は行われていない。特に、この
ような検出器が自動車の吸気センサとして使用さ
れる場合には、検出器の使用条件が極めてシビア
であり、検出器の支持及び接続を含めた検出装置
全体として適切に構成することが重要である。 In order to mechanically support and electrically connect a heat-sensitive resistance type flow sensor formed as a chip for durable and highly accurate detection, the following must be kept in mind. First of all, since such chip base materials are made of ceramics, silicon, etc., they are susceptible to mechanical stress such as vibration and torsion.Secondly, as a heat-related detector, the detector and electrical equipment It is important that the temperature gradient of the lead wire connecting between the two is at room temperature on the electrical equipment side, and that the flow of the fluid to be detected is not obstructed as much as possible. The above-mentioned prior art aims at improving the performance of the detector itself, and does not consider the above-mentioned points to be noted. In particular, when such a detector is used as an air intake sensor in an automobile, the conditions for using the detector are extremely severe, and it is difficult to properly configure the entire detection device including the support and connection of the detector. is important.
発明の目的
本発明は上記に鑑みてなされたものであつて耐
久性及び精度ともに優れた感熱抵抗型流量検出装
置を提供することを目的とする。OBJECTS OF THE INVENTION The present invention has been made in view of the above, and an object of the present invention is to provide a heat-sensitive resistance type flow rate detection device that is excellent in both durability and accuracy.
発明の構成
本発明による感熱抵抗型流量検出装置は、平板
状チツプ基材に少くとも２個の抵抗素子を薄膜状
に付着せしめてなる感熱抵抗型流量検出器が流体
流通管内に配置され、前記少くとも２個の抵抗素
子の各々を外部電気装置に電気的に接続するリー
ド部材が帯状に形成され、且つこの帯状リード部
材が前記感熱抵抗型流量検出器を前記流体流通管
に機械的に支持せしめるようにしたことを特徴と
する。Structure of the Invention The heat-sensitive resistance type flow rate detection device according to the present invention includes a heat-sensitive resistance type flow rate detector formed by attaching at least two resistance elements in the form of a thin film to a flat chip base material, arranged in a fluid flow pipe, A lead member electrically connecting each of the at least two resistive elements to an external electrical device is formed in a strip shape, and the strip lead member mechanically supports the thermosensitive resistance flow sensor to the fluid flow tube. It is characterized by being made to urge.
実施例の説明
以下本発明の実施例について図面を参照して説
明する。DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第１図及び第２図において、１は流体流通管で
あり、この管１内を空気等の流体が矢印Ｆに沿つ
て流れる。流体流通管１は自動車のエンジンに通
じる吸気管であることがでぎ、或いは又吸気管の
一部をバイパスするバイパス管であることもでき
る。 1 and 2, reference numeral 1 denotes a fluid flow pipe, through which fluid such as air flows along arrow F. In FIG. The fluid flow pipe 1 can be an intake pipe leading to the engine of the motor vehicle, or it can also be a bypass pipe that bypasses a part of the intake pipe.
流体流通管１の一部２はプラスチツク等の絶縁
性材料で作られ、１及び２で形成される流体通路
は連続的に滑らかである。流体流通管の一部２を
以下検出器取付管部と呼ぶことにする。検出器取
付管部２内には２個の検出器チツプ３，４が配置
され、チツプ４はチツプ３の上流にあつて、半径
方向の位置もわずかに相互にずらされている。こ
れらのチツプ３，４は平板状に形成されていて、
流れＦに平行に配置され、従つて、チツプ３，４
によつて流れＦの乱れの生成ができるだけ小さく
なるようになつている。チツプ３の表面には流れ
Ｆを横断してほぼ平行な二個の抵抗素子５，６か
薄膜状に付着され、他方のチツプ４には一個の抵
抗素子６が薄膜状に付着される。この実施例で
は、二個のチツプ３，４に計三個の抵抗素子５，
６，７が形成されているが、チツプを共通として
抵抗素子７を抵抗素子５，６の反対面側に形成す
ることも可能である。 Part 2 of fluid flow tube 1 is made of an insulating material such as plastic, and the fluid passage formed by 1 and 2 is continuous and smooth. Part 2 of the fluid flow pipe will hereinafter be referred to as the detector mounting pipe section. Two detector chips 3 and 4 are disposed within the detector mounting tube 2, with the chip 4 located upstream of the chip 3 and slightly offset from each other in the radial direction. These chips 3 and 4 are formed into a flat plate shape,
are arranged parallel to the flow F and therefore the chips 3, 4
The generation of turbulence in the flow F is thereby made as small as possible. On the surface of the chip 3, two resistive elements 5 and 6 are attached in the form of a thin film across the flow F, and one resistive element 6 is attached in the form of a thin film to the other chip 4. In this embodiment, two chips 3 and 4 have a total of three resistive elements 5,
6 and 7 are formed, however, it is also possible to use a common chip and form the resistance element 7 on the opposite side of the resistance elements 5 and 6.
チツプ３の詳細な構造は第３図及び第５図から
知ることができ、これは平板のシリコン結晶ウエ
ハ基材８上に二酸化硅素又は四窒化硅素等の絶縁
膜９を形成し、この絶縁膜を研摩処理した後で、
絶縁膜９上にフオトリソグラフイー及びエツチン
グにより抵抗素子５，６の膜を形成する（チツプ
４においても同様である）。抵抗素子５，６の各
端部には金等からなるボンデイングパツド１０が
付着される。第５図では金のボンデイングパツド
１０と絶縁膜９との間にはアルミニウム又はクロ
ムからなる中間層１１が設けられてこれら間が強
力に接合できるようになつている。抵抗素子５，
６は温度係数の異つた材料からなるのが好まし
く、例えば上流側の抵抗素子５はニツケルクロ
ム、下流側の抵抗素子６（７も同様）はニツケル
からなる。ニツケルはニツケルクロムに対して温
度係数が大きく温度の変化に対して抵抗の変化が
敏感である。従つて、上流側の抵抗素子５は加熱
用に用いられ、下流側の抵抗素子６が抵抗素子５
の温度の変化に感応する。抵抗素子５から抵抗素
子６への熱の移動の大部分はシリコン基材８を介
して行われ、残りの小部分が気流を介して行われ
る。もう一個の抵抗素子７は感熱抵抗素子６の温
度補償用に用いられる。従つて、これらの抵抗素
子５，６，７はボンデイングパツド１０を介して
外部の電気装置に接続されねばならない。例え
ば、加熱用抵抗素子５は電源に接続され、一方、
感熱抵抗素子６，７はブリツジ回路を利用した検
出制御装置に接続され、ここでいう電源装置と検
出制御装置はさらに相互接続されることができ
る。 The detailed structure of the chip 3 can be seen from FIGS. 3 and 5, and is made by forming an insulating film 9 of silicon dioxide or silicon tetranitride on a flat silicon crystal wafer base material 8. After polishing the
Films of resistive elements 5 and 6 are formed on insulating film 9 by photolithography and etching (the same applies to chip 4). A bonding pad 10 made of gold or the like is attached to each end of the resistive elements 5, 6. In FIG. 5, an intermediate layer 11 made of aluminum or chromium is provided between the gold bonding pad 10 and the insulating film 9 to ensure strong bonding between them. resistance element 5,
6 are preferably made of materials having different temperature coefficients; for example, the upstream resistance element 5 is made of nickel chrome, and the downstream resistance element 6 (and 7 is also made of nickel). Nickel has a larger temperature coefficient than nickel chromium, and changes in resistance are more sensitive to changes in temperature. Therefore, the upstream resistance element 5 is used for heating, and the downstream resistance element 6 is used for heating.
sensitive to changes in temperature. Most of the heat transfer from the resistive element 5 to the resistive element 6 takes place via the silicon substrate 8, with the remaining small part taking place via the air flow. Another resistive element 7 is used for temperature compensation of the heat sensitive resistive element 6. Therefore, these resistive elements 5, 6, 7 must be connected to an external electrical device via bonding pads 10. For example, the heating resistive element 5 is connected to a power source, while
The heat-sensitive resistance elements 6 and 7 are connected to a detection control device using a bridge circuit, and the power supply device and the detection control device here can be further interconnected.
第１図から第４図に示されるように、この電気
接続は帯状リードフレーム１２により行われる。
実施例においては、リードフレーム１２はステン
レス鋼で作られ、一方の面に金メツキが施されて
いる。しかしながら、リードフレームはこのよう
な材質に限定されず、以下に明らかになる性質を
備えたものであれば他の材質を使用することがで
きる。 This electrical connection is made by a strip lead frame 12, as shown in FIGS. 1-4.
In the embodiment, lead frame 12 is made of stainless steel and is gold plated on one side. However, the lead frame is not limited to these materials, and other materials can be used as long as they have the properties that will become clear below.
検出器チツプは約７mm×５mm（×厚さ約0.5mm）
のほぼ矩形状であり、その上下流端壁は流体の乱
れをできるだけ小さくするように形成される。こ
れに対して、リードフレーム１２は例えば長さ
13.5mm、幅1.4mm、厚さ0.1mmの帯状である。検出
器チツプ３に対しては、このようなリードフレー
ム１２が各抵抗素子に対して２本ずつ計４本使用
されている。各抵抗素子５又は６のボンデイング
パツド１０は幅方向の両端部近傍に形成され、こ
れらを結ぶ線は検出器チツプ３が取付管２内に配
置されたときにほぼ直径方向に延びることができ
る。斯くして、各リードフレーム１２は前述のボ
ンデイングパツド１０を結ぶ線に沿つて間隔をあ
けて対向し、シリコン基材８の平底面に重層さ
れ、第４図にＡで示される表面に沿つて金属拡散
接合により固着される。さらに、金属拡散接合に
よりそれぞれに接合された導体のボンデイングワ
イヤ１３によりボンデイングパツド１０とリード
フレーム１２の金メツキ面が結合される。第２図
に示されるように、リードフレーム１２は各対が
管横断方向にほぼ一直線上に対向して取付管部２
の管壁内に挿入され、管壁内で前記横断方向と直
角な横断方向に曲げられて、各端部が管壁から露
出して外部電気装置に接続される。 Detector chip is approximately 7mm x 5mm (x approximately 0.5mm thick)
It has a substantially rectangular shape, and its upstream and downstream end walls are formed to minimize fluid turbulence. On the other hand, the lead frame 12 has a length, for example.
It is a strip of 13.5mm, width 1.4mm, and thickness 0.1mm. For the detector chip 3, a total of four such lead frames 12 are used, two for each resistance element. The bonding pads 10 of each resistive element 5 or 6 are formed near both ends in the width direction, and a line connecting them can extend approximately diametrically when the detector chip 3 is placed in the mounting tube 2. . In this way, each lead frame 12 faces each other at intervals along the line connecting the bonding pads 10, is layered on the flat bottom surface of the silicon substrate 8, and is stacked along the surface indicated by A in FIG. It is then fixed by metal diffusion bonding. Furthermore, the gold-plated surfaces of the bonding pad 10 and the lead frame 12 are bonded by conductive bonding wires 13 that are bonded to each other by metal diffusion bonding. As shown in FIG. 2, each pair of lead frames 12 is arranged in a manner such that each pair of lead frames 12 faces each other in a substantially straight line in the transverse direction of the pipe.
is inserted into the tube wall of the tube and bent in a transverse direction perpendicular to said transverse direction within the tube wall, with each end exposed from the tube wall and connected to an external electrical device.
上記説明から明らかなように、リードフレーム
１２は検出器チツプ３の抵抗素子５，６を外部電
気装置に電気的に接続するばかりでなく、検出器
チツプ３を取付管部２に機械的に支持させるもの
である。従つて、リード線と支持フレームを別個
に構成する場合と比べると流体通路内に流体の流
れを乱す対象物の個数及び全横断面積を減少せし
めることができ、より乱れの小さい流路において
高精度の流量検出を行うことができる。リードフ
レーム１２は帯状に形成されていてその幅方向を
流体流れ方向に平行に配置されることができるの
で流体の流れの乱れをさらに小さくすることがで
き、且つその幅方向の寸法を適切に選定すること
により適切な機械的支持力を提供することができ
る。又、リードフレーム１２を帯状に形成し且つ
一直線状の部分で検出器チツプ３を支持すること
によりシリコンで形成される基材の弱点であるね
じれ等の応力がかからないようにすることができ
る。 As is clear from the above description, the lead frame 12 not only electrically connects the resistive elements 5 and 6 of the detector chip 3 to an external electrical device, but also mechanically supports the detector chip 3 to the mounting tube section 2. It is something that makes you Therefore, compared to the case where the lead wire and the support frame are configured separately, the number and total cross-sectional area of objects that disturb the fluid flow in the fluid passage can be reduced, and high precision can be achieved in the flow passage with less turbulence. Flow rate detection can be performed. The lead frame 12 is formed into a strip shape and can be arranged with its width direction parallel to the fluid flow direction, so that turbulence in the fluid flow can be further reduced, and the width direction dimension can be appropriately selected. This provides adequate mechanical support. Further, by forming the lead frame 12 in a band shape and supporting the detector chip 3 with a linear portion, stress such as twisting, which is a weak point of a base material made of silicon, can be prevented from being applied.
さらに、リードフレーム１２に電気的接続と機
械的支持を兼用させることにより、電気的リード
の外部電気装置に接続される部位の温度がほぼ常
温となるようにより容易に適合されることがで
き、温度補正の必要性が少くなる。リードフレー
ム１２は管路内で流体にさらされる部分では流体
により冷却されることになり、リードフレーム１
２を一定断面の帯状形状とすることによつてその
ような冷却の程度を容易に解析することができ
る。 Furthermore, by having the lead frame 12 serve as both an electrical connection and a mechanical support, the temperature of the portion of the electrical lead connected to the external electrical device can be more easily adjusted to approximately room temperature. The need for correction is reduced. The lead frame 12 is cooled by the fluid at the portion exposed to the fluid in the pipe line.
By making 2 a band-like shape with a constant cross section, the degree of such cooling can be easily analyzed.
第５図はリードフレーム１２が金製のボンデイ
ングパツド１０に直接的に接合された例を示すも
のである。第５図では、抵抗素子６の部分がボン
デイングパツド１０より陥んでいるように見える
が、抵抗素子５，６，７の表面には二酸化硅素等
の保護膜を形成することも可能である。第６図か
ら第８図に示す例においては、リードフレーム１
２のチツプ３への接合部分に一辺を残した打抜き
により立直片１４（第８図）を形成し、リードフ
レーム１２の基体部分をチツプ３の裏面に接合
し、立直片１４を反対表面のボンデイングパツド
１０に接合させて、この立直片１４と基体部分と
により第７図に示されるようにチツプ３を表裏か
ら挟むように支持し、且つ電気接続が行われるよ
うにしている。この場合には、第８図の裏面側に
金メツキが施される。そして、このような構造に
よりチツプ３の支持がさらに確実なものにされ
る。 FIG. 5 shows an example in which a lead frame 12 is directly bonded to a bonding pad 10 made of gold. In FIG. 5, the resistive element 6 appears to be sunken below the bonding pad 10, but it is also possible to form a protective film of silicon dioxide or the like on the surfaces of the resistive elements 5, 6, and 7. In the examples shown in FIGS. 6 to 8, the lead frame 1
A vertical piece 14 (FIG. 8) is formed by punching with one side left at the joint part of the lead frame 12 to the chip 3, the base part of the lead frame 12 is joined to the back surface of the chip 3, and the vertical piece 14 is bonded to the opposite surface. It is joined to the pad 10, and the upright piece 14 and the base portion support the chip 3 from the front and back sides as shown in FIG. 7, and electrical connections are made. In this case, gold plating is applied to the back side as shown in FIG. Such a structure further ensures the support of the chip 3.
第９図の例では、リードフレーム１２の一面に
ジルコニア１５を熱溶射により付着せしめてチツ
プ３のシリコン基材との間に断熱層を形成し、チ
ツプ３のシリコン基材からリードフレーム１２へ
の伝熱をさらに小さくして検出器の応答性を向上
させたものである。この場合には、リードフレー
ム１２のジルコニア付着面とチツプ３のシリコン
基材面とは接着剤により接合されることができ
る。 In the example shown in FIG. 9, zirconia 15 is attached to one surface of the lead frame 12 by thermal spraying to form a heat insulating layer between the silicon base material of the chip 3 and the lead frame 12. This further reduces heat transfer and improves the responsiveness of the detector. In this case, the zirconia-attached surface of the lead frame 12 and the silicon base material surface of the chip 3 can be bonded using an adhesive.
第１０図は第２図の変化例であり、帯状のリー
ドフレーム１２，１２′は第２図で説明したもの
と同様に一直線上に配置されているが、リードフ
レーム１２，１２′は取付管部２内で曲げられる
ことなくまつすぐ外部へ延長される。この場合に
は外部との電気接続を容易にするために、同一の
抵抗素子５，６のボンデイングパツド１０を同一
端面側に形成し、第１０図のリードフレーム１２
をそのようなボンデイングパツドに接続し、他方
のリードフレーム１２′はチツプ３を支持するた
めだけのものとすることができる。 FIG. 10 is a variation of FIG. 2, in which the strip-shaped lead frames 12, 12' are arranged in a straight line as explained in FIG. The eyelashes are directly extended to the outside without being bent within the portion 2. In this case, in order to facilitate electrical connection with the outside, bonding pads 10 of the same resistance elements 5 and 6 are formed on the same end face side, and the lead frame 12 shown in FIG.
may be connected to such bonding pads, and the other lead frame 12' may be solely for supporting the chip 3.
発明の効果
以上説明したように、本発明によれば耐久性及
び精度の優れた感熱抵抗型流量検出装置を得るこ
とができる。Effects of the Invention As explained above, according to the present invention, it is possible to obtain a heat-sensitive resistance flow rate detection device with excellent durability and accuracy.
第１図は本発明による感熱抵抗型流量検出装置
の一断面図、第２図は第１図の線−に沿つた
断面図、第３図は第１図の流量検出装置の拡大平
面図、第４図は第３図の正面図、第５図は第３図
の変化例の断面図、第６図は他の実施例の第３図
同様の平面図、第７図は第６図の正面図、第８図
は第６図のリードフレームの斜視図、第９図は第
７図の変化例の正面図、第１０図は他の実施例の
第２図同様の断面図である。
２……取付管部、３……流量検出器、５，６，
７……抵抗素子、１０……ボンデイングパツド、
１２……リードフレーム。
FIG. 1 is a sectional view of a heat-sensitive resistance flow rate detection device according to the present invention, FIG. 2 is a sectional view taken along the line - in FIG. 1, and FIG. 3 is an enlarged plan view of the flow rate detection device of FIG. 1. Fig. 4 is a front view of Fig. 3, Fig. 5 is a sectional view of a variation of Fig. 3, Fig. 6 is a plan view similar to Fig. 3 of another embodiment, and Fig. 7 is a view of Fig. 6. 8 is a perspective view of the lead frame shown in FIG. 6, FIG. 9 is a front view of a modification of FIG. 7, and FIG. 10 is a sectional view similar to FIG. 2 of another embodiment. 2...Mounting pipe section, 3...Flow rate detector, 5, 6,
7... Resistance element, 10... Bonding pad,
12...Lead frame.
Claims (1)
を薄膜状に付着せしめてなる感熱抵抗型流量検出
器が流体流通管内に配置され、前記少くとも２個
の抵抗素子の各々を外部電気装置に電気的に接続
するリード部材が帯状に形成され、且つ該帯状リ
ード部材が前記感熱抵抗型流量検出器を前記流体
流通管に機械的に支持せしめるようにした感熱抵
抗型流量検出装置。1. A heat-sensitive resistance flow rate sensor comprising at least two resistive elements attached in a thin film form to a flat chip base material is disposed within a fluid flow pipe, and each of the at least two resistive elements is connected to an external electrical device. A heat-sensitive resistance flow rate detection device, wherein a lead member electrically connected to the heat-sensitive resistance flow rate detector is formed in a band shape, and the band-shaped lead member mechanically supports the heat-sensitive resistance type flow rate sensor on the fluid flow pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59085115A JPS60230020A (en) | 1984-04-28 | 1984-04-28 | Thermal resistance type flow rate detecting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59085115A JPS60230020A (en) | 1984-04-28 | 1984-04-28 | Thermal resistance type flow rate detecting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60230020A JPS60230020A (en) | 1985-11-15 |
| JPH0522849B2 true JPH0522849B2 (en) | 1993-03-30 |
Family
ID=13849626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59085115A Granted JPS60230020A (en) | 1984-04-28 | 1984-04-28 | Thermal resistance type flow rate detecting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60230020A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3604202C2 (en) * | 1985-02-14 | 1997-01-09 | Nippon Denso Co | Directly heated flow measuring device |
| US5321382A (en) * | 1991-07-08 | 1994-06-14 | Nippondenso Co., Ltd. | Thermal type flow rate sensor |
| US6845661B2 (en) * | 2002-10-11 | 2005-01-25 | Visteon Global Technologies, Inc. | Lead frame for automotive electronics |
| DE102008056198B4 (en) * | 2008-11-06 | 2015-02-19 | Continental Automotive Gmbh | Mass flow sensor and motor vehicle with the mass flow sensor |
-
1984
- 1984-04-28 JP JP59085115A patent/JPS60230020A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60230020A (en) | 1985-11-15 |
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