JPS63128756A - Manufacture of thin-film transistor - Google Patents

Manufacture of thin-film transistor

Info

Publication number
JPS63128756A
JPS63128756A JP27612086A JP27612086A JPS63128756A JP S63128756 A JPS63128756 A JP S63128756A JP 27612086 A JP27612086 A JP 27612086A JP 27612086 A JP27612086 A JP 27612086A JP S63128756 A JPS63128756 A JP S63128756A
Authority
JP
Japan
Prior art keywords
amorphous silicon
film
gt
lt
formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27612086A
Inventor
Ryuichi Kawase
Nobuyuki Kitajima
Osamu Masutomi
Toshiro Nagase
Eizaburo Watanabe
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP27612086A priority Critical patent/JPS63128756A/en
Publication of JPS63128756A publication Critical patent/JPS63128756A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Abstract

PURPOSE:To avoid the contamination due to a photo process of a channel part and to obtain a homogeneous array by a method wherein an n<+> amorphous silicon film which is formed on an amorphous silicon layer for a channel is used as surface-protecting film. CONSTITUTION:A gate electrode 2 and a picture-element electrode 3 are formed on a transparent substrate 1 of quartz or the like. A gate insulating film 4, an amorphous silicon film 5 and an n<+> amorphous silicon film 6 are formed in succession; a protective film 10 for the n<+> amorphous silicon film is shaped at a part which corresponds to a source-drain electrode. The n<+> amorphous silicon film 6 and the amorphous silicon film 5 are processed to shape an island which constitutes a TFT. A through hole 11 which connects electrically a drain electrode 8 to a transparent picture-element electrode 3 is made; a source electrode and a drain electrode 8 are formed on the n<+> amorphous silicon protective film 10; at the same time, the drain electrode 8 is connected electrically to the transparent picture-element electrode 3 via the through hole 11. After the n<+> amorphous silicon film on the channel part has been removed and a silicon oxide film has been deposited, a channel-protecting film 9 is formed.
JP27612086A 1986-11-19 1986-11-19 Manufacture of thin-film transistor Pending JPS63128756A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27612086A JPS63128756A (en) 1986-11-19 1986-11-19 Manufacture of thin-film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27612086A JPS63128756A (en) 1986-11-19 1986-11-19 Manufacture of thin-film transistor

Publications (1)

Publication Number Publication Date
JPS63128756A true JPS63128756A (en) 1988-06-01

Family

ID=17565071

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27612086A Pending JPS63128756A (en) 1986-11-19 1986-11-19 Manufacture of thin-film transistor

Country Status (1)

Country Link
JP (1) JPS63128756A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4990460A (en) * 1989-01-27 1991-02-05 Nec Corporation Fabrication method for thin film field effect transistor array suitable for liquid crystal display
US5055899A (en) * 1987-09-09 1991-10-08 Casio Computer Co., Ltd. Thin film transistor
US5166086A (en) * 1985-03-29 1992-11-24 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing same
US5166085A (en) * 1987-09-09 1992-11-24 Casio Computer Co., Ltd. Method of manufacturing a thin film transistor
US5229644A (en) * 1987-09-09 1993-07-20 Casio Computer Co., Ltd. Thin film transistor having a transparent electrode and substrate
US5320973A (en) * 1986-07-11 1994-06-14 Fuji Xerox Co., Ltd. Method of fabricating a thin-film transistor and wiring matrix device
US5327001A (en) * 1987-09-09 1994-07-05 Casio Computer Co., Ltd. Thin film transistor array having single light shield layer over transistors and gate and drain lines

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5166086A (en) * 1985-03-29 1992-11-24 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing same
US5320973A (en) * 1986-07-11 1994-06-14 Fuji Xerox Co., Ltd. Method of fabricating a thin-film transistor and wiring matrix device
US5327001A (en) * 1987-09-09 1994-07-05 Casio Computer Co., Ltd. Thin film transistor array having single light shield layer over transistors and gate and drain lines
US5055899A (en) * 1987-09-09 1991-10-08 Casio Computer Co., Ltd. Thin film transistor
US5166085A (en) * 1987-09-09 1992-11-24 Casio Computer Co., Ltd. Method of manufacturing a thin film transistor
US5229644A (en) * 1987-09-09 1993-07-20 Casio Computer Co., Ltd. Thin film transistor having a transparent electrode and substrate
US4990460A (en) * 1989-01-27 1991-02-05 Nec Corporation Fabrication method for thin film field effect transistor array suitable for liquid crystal display

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