JPS6312865U - - Google Patents
Info
- Publication number
- JPS6312865U JPS6312865U JP1387886U JP1387886U JPS6312865U JP S6312865 U JPS6312865 U JP S6312865U JP 1387886 U JP1387886 U JP 1387886U JP 1387886 U JP1387886 U JP 1387886U JP S6312865 U JPS6312865 U JP S6312865U
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- opening
- active layer
- semiconductor active
- narrow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000605 extraction Methods 0.000 claims description 2
- 230000005669 field effect Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1387886U JPS6312865U (fr) | 1986-01-31 | 1986-01-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1387886U JPS6312865U (fr) | 1986-01-31 | 1986-01-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6312865U true JPS6312865U (fr) | 1988-01-27 |
Family
ID=30803347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1387886U Pending JPS6312865U (fr) | 1986-01-31 | 1986-01-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6312865U (fr) |
-
1986
- 1986-01-31 JP JP1387886U patent/JPS6312865U/ja active Pending