JPS63127147A - Detection signal voltage control system of face plate flaw detection apparatus - Google Patents

Detection signal voltage control system of face plate flaw detection apparatus

Info

Publication number
JPS63127147A
JPS63127147A JP27315886A JP27315886A JPS63127147A JP S63127147 A JPS63127147 A JP S63127147A JP 27315886 A JP27315886 A JP 27315886A JP 27315886 A JP27315886 A JP 27315886A JP S63127147 A JPS63127147 A JP S63127147A
Authority
JP
Japan
Prior art keywords
face plate
voltage
photomultiplier tube
amplifier
microprocessor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27315886A
Other languages
Japanese (ja)
Inventor
Masashi Honda
本田 正志
Izuo Hourai
泉雄 蓬莱
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi Electronics Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Electronics Engineering Co Ltd filed Critical Hitachi Electronics Engineering Co Ltd
Priority to JP27315886A priority Critical patent/JPS63127147A/en
Publication of JPS63127147A publication Critical patent/JPS63127147A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To accurately and rapidly detect the flaw of a face plate, by a method wherein the voltage fitted to a photomultiplier tube is applied to a reference face plate in various surface states by a microprocessor and the gain of an amplifier is adjusted corresponding to said voltage. CONSTITUTION:A reference face plate 1 is mounted on a detection part by the feed mechanism 2 of a face plate flaw detection apparatus and the surface thereof is scanned by the laser spot from a projection optical system. Next, V.ROM 9 storing the apply voltage of a photomultiplier tube 4 fitted to the face plate 1 is provided and the value of the apply voltage is given to V.CON 10 by the indication of a microprocessor (MPU) 8 and the voltage from a power source 1 is adjusted to supply the predetermined apply voltage to the photomultiplier tube 4. The output voltage from the photomultiplier tube 4 is amplified by an amplifier 5 and converted to a digital detection signal by an A/D converter 7 to be inputted to MPU 8. A control signal is sent out from MPU 8 so that said digital detection signal becomes the prescribed value predetermined by measurement to control the amplifier 5. A background level becomes a definite value to be inputted to a signal processing circuit 6.

Description

【発明の詳細な説明】 [産業−にの利用分野] この発明は、面板欠陥検出装置において、各種の表面状
態の而仮に対して、バックグラウンドレベルを一定値に
調整する、検出信号電圧制御方式%式% [従来の技術] 半導体の材料であるシリコンウェハの表面には、突起、
塵埃、擦り傷などの欠陥が存在し、これらはすべて、製
品の品質を阻害するので、欠陥検査装置により検査され
ている。検査の方法は、面板表面をレーザスポットで走
査し、欠陥による散乱光を受光器により捉えるものであ
る。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention provides a detection signal voltage control method for adjusting a background level to a constant value for various surface conditions in a face plate defect detection device. % formula % [Prior art] The surface of a silicon wafer, which is a semiconductor material, has protrusions,
There are defects such as dust, scratches, etc., all of which impede the quality of the product, so they are inspected by defect inspection equipment. The inspection method is to scan the surface of the face plate with a laser spot and capture the scattered light due to defects with a light receiver.

欠陥の種類は多岐に分かれており、効果的に欠陥を検出
するためには、光学系の構成に多くの選択肢がある。ま
た、受光器としては、感度の優れた光電子増倍管が適し
ている。
There are many types of defects, and in order to effectively detect defects, there are many options for the configuration of the optical system. Moreover, a photomultiplier tube with excellent sensitivity is suitable as a photoreceiver.

一方、シリコンウェハは、処理の過程で表面の状態が変
化する。これにより反射率が変わる場合は、バックグラ
ウンドとしてのレーザスポットの反射光の強1yが変化
する。この反射光はノイズに他ならす、欠陥による散乱
光とのS/N比に太き(影響するものである。
On the other hand, the surface condition of silicon wafers changes during the process of processing. When the reflectance changes as a result, the intensity 1y of the reflected light of the laser spot as the background changes. This reflected light is not only noise but also has a large effect on the S/N ratio with respect to scattered light due to defects.

他方、光電r増幅管は印加電圧により、増幅度が大幅に
変化するもので、白板の表面状態あるいは欠陥の種類に
対応して選択した光学系に対して、適応する印加電圧が
ある。そこで、Y・め実験により各種の表面状態、およ
び選択された光学系に対する、最適の印加電圧を求めて
おき、それぞれにおける出力電圧を、信号処理回路に入
力することとなる。しかしながら、光電子増倍管は電源
投入後、増幅度が安定するまでの時間が割合長くかかり
、経年または取り替えによる増幅度の変動も大きい。
On the other hand, the amplification degree of the photoelectric amplifier tube changes significantly depending on the applied voltage, and there is an applied voltage that is suitable for the optical system selected depending on the surface condition of the white board or the type of defect. Therefore, the optimum applied voltages for various surface conditions and selected optical systems are determined through Y-me experiments, and the output voltages for each are input to the signal processing circuit. However, it takes a relatively long time for the amplification degree of the photomultiplier tube to stabilize after the power is turned on, and the amplification degree fluctuates greatly over time or due to replacement.

ここで、信号処理回路における信号処理についてのべる
と、光電子増倍管の出力する検出信弓は、第3図(a)
に例示するような波形で、に記した白板表面のバンクグ
ラウンドレベルBのにに、長す、または面積が比較的大
きい欠陥による低周波成分(イ)があり、その1・、に
、微粒子なと点状の欠陥によるパルス成分(ロ)が混在
する。これらは、周波数分離され、パルス成分(0)は
図(b)に示すものとし、閾値vl””’vqにより波
高値により分離されて、欠陥の大きさの区分がなされる
ものである。
Here, regarding the signal processing in the signal processing circuit, the detection beam output from the photomultiplier tube is as shown in Fig. 3(a).
In the waveform shown in Figure 1, there is a low frequency component (A) due to a defect with a relatively large length or area at the bank ground level B on the white board surface shown in Figure 1. and pulse components (b) due to point-like defects coexist. These are frequency-separated, and the pulse component (0) is shown in Figure (b), and is separated based on the peak value using a threshold value vl""'vq to classify the size of the defect.

この波l’+’+j値は標準拉rなどにより校正するこ
とが必゛冴である。
It is necessary to calibrate this wave l'+'+j value using a standard r or the like.

1・記の低周波成分(イ)は、図(c)の波形に分離さ
れるが、これにはバックグラウンドレベルBか含まれて
おり、これを差し引いた値が真の欠陥信号である。そこ
で、各種の基準面板に対するバックグラウンドレベルB
を測定し、これが変化しないようにすることが必要であ
る。さらにいえば、このバックグラウンドレベルBを各
基準面板について−・定値として検111信りから差し
引くことが好都合である。
The low frequency component (A) in 1. is separated into the waveform shown in Figure (c), which includes the background level B, and the value obtained by subtracting this is the true defect signal. Therefore, the background level B for various reference face plates
It is necessary to measure this and ensure that it does not change. Furthermore, it is convenient to subtract this background level B from the test result as a constant value for each reference face plate.

さて、1−記したような充電r・増倍管の増幅度の変化
に拘わらず、各種の基準面板に対してバックグラウンド
レベルBを・定植とするには、光電γ−増倍管の印加電
圧を調整して?Jう方法は必ずしも適当でない。
Now, regardless of the changes in charging r and the amplification degree of the multiplier tube as described in 1-1, in order to set the background level B to various reference face plates, it is necessary to apply the photoelectric gamma-multiplier. Adjust the voltage? This method is not necessarily appropriate.

そこで、1−記の各種の表面状態に対応した印加電圧を
自動的に設定し、同時に、バックグラウンドレベルBを
−・定とすることができる制御方式が必要である。
Therefore, there is a need for a control system that can automatically set the applied voltage corresponding to the various surface conditions listed in 1- and at the same time keep the background level B constant.

[発明の11的コ この発明は、以−1〕の問題に鑑み、白板欠陥検出装置
において、各種の表面状態の基準面板に対して、マイク
ロプロセッサにより光電子増倍管に適応する印加電圧を
供給し、これに対して増幅器の利得を調整して、バック
グラウンドレベルBを一定値とする制御方式を提供する
ことを目的とするものである。
[Eleventh Point of the Invention] In view of the following problem, the present invention, in a white board defect detection device, supplies an applied voltage suitable for a photomultiplier tube to a reference face plate with various surface conditions by a microprocessor. However, it is an object of the present invention to provide a control method that adjusts the gain of the amplifier in response to this problem and keeps the background level B at a constant value.

[問題点を解決するための手段] この発明は、白板の表面をレーザスポットにより走査し
て、表面の欠陥による散乱光を受光して欠陥を検出する
白板欠陥検出装置に対するものである。白板表面の処理
プロセスによる表面状態に対する基準面板を、欠陥検出
部に装着する。マイクロプロセッサの指ノ1<により光
電r増倍管の印加電圧を、該基を白板に適応する電圧値
とし、該基を白板にレーザスポットを照射してえられる
充電r増倍管の出力電圧を、増幅器を紅てA/I)変換
してマイクロプロセッサに入力する。該入力電圧値が1
−記基を白板のバックグラウンドとしての、・定の値と
なるように、マイクロプロセッサにより、」1記増幅器
の利得を制御するものである。
[Means for Solving the Problems] The present invention is directed to a white board defect detection device that detects defects by scanning the surface of the white board with a laser spot and receiving scattered light due to defects on the surface. A reference face plate for the surface condition resulting from the white board surface treatment process is attached to the defect detection unit. The voltage applied to the photomultiplier tube by finger 1 of the microprocessor is set to a voltage value that is suitable for the white board, and the output voltage of the charging multiplier tube is obtained by irradiating the white board with a laser spot. is converted to A/I by an amplifier and input to the microprocessor. The input voltage value is 1
- The gain of the amplifier is controlled by a microprocessor so that the base becomes a constant value as the background of the white board.

[作用コ 以−ヒの説明により明らかなように、この発明による白
板欠陥検出装置の検出信号電圧制御方式によれば、各種
の表面状態の而仮に対して、マイクロプロセッサにより
それぞれ適応する印加電圧が光電子増倍管に供給され、
これに対して信号処理回路に入力するバックグラウンド
レベルBが一定に保たれ、データ処理においてこのバッ
クグラウンドレベルBを検出45号から差し引くことに
より、真の欠陥信弓がえられるものである。
[As is clear from the explanation of the operation procedure, according to the detection signal voltage control method of the white board defect detection device according to the present invention, the applied voltage is adjusted by the microprocessor to suit various surface conditions. supplied to the photomultiplier tube,
On the other hand, the background level B input to the signal processing circuit is kept constant, and by subtracting this background level B from the detection number 45 during data processing, a true defect signal can be obtained.

[実施例コ 第1図は、この発明による白板欠陥検出装置の検出信号
電圧制御方式の実施例を、1<すプロ、り図である。図
において、白板1は処理プロセスの各段階の表面状態に
対する基準となるもので、而板欠陥検出装置の搬送機構
2により、検出部に装着され、これに対して投光光学系
3よりレーザスポットが表面を走査する。該面板1は、
欠陥が極めて少ないものとし、その反射光は殆ど正反射
の成分のみである。これに対して、受光器系は、図示し
ないが、正反射光から逃げた方向すなわち暗視野受光と
し、面板表面の乱反射光による、バックグラウンド光を
受光する。受光器には光電子増倍管4を用いる。
[Example 1] Fig. 1 is a diagram showing an example of a detection signal voltage control method of a white board defect detection apparatus according to the present invention. In the figure, a white plate 1 serves as a reference for the surface condition at each stage of the treatment process, and is mounted on the detection unit by the conveyance mechanism 2 of the plate defect detection device, and a laser spot is emitted from the light projection optical system 3 to the white plate 1. scans the surface. The face plate 1 is
It is assumed that there are very few defects, and the reflected light is almost only a regular reflection component. On the other hand, although not shown, the light receiver system receives light in a direction away from the specularly reflected light, that is, in a dark field, and receives background light due to diffusely reflected light from the surface of the face plate. A photomultiplier tube 4 is used as a light receiver.

次に、基準面板1の種類に対して、適応する光電子増倍
管4の印加電圧を記憶したVφROM9を設け、マイク
ロプロセッサ8の指示により、該印加電圧の値をVII
CONIOに与えて、電源11よりの電源電圧を調整し
、光電r−増倍管4に所定の印加電圧を供給する。
Next, a VφROM 9 is provided that stores the applied voltage of the photomultiplier tube 4 that is suitable for the type of the reference face plate 1, and the value of the applied voltage is set to VII according to instructions from the microprocessor 8.
CONIO, the power supply voltage from the power supply 11 is adjusted, and a predetermined applied voltage is supplied to the photomultiplier tube 4.

光電子増倍管4よりの出力電圧は増幅器5により増幅さ
れ、A/I)変換器7によりデジタル検出信号に変換さ
れて、マイクロプロセッサ8に人力する。このデジタル
検出信号電圧が予め測定により定めた、規定の値となる
ように、マイクロプロセッサ8より制御信5tが送出さ
れて増幅器5を制御する。バックグラウンドレベルBは
一定値となり、被検面板の検査中一定値として信号処理
回路6に人力する。たたし、検査中には増幅器5に対し
て制御信号は送出しないものとする。
The output voltage from the photomultiplier tube 4 is amplified by an amplifier 5, converted into a digital detection signal by an A/I converter 7, and inputted to a microprocessor 8. A control signal 5t is sent from the microprocessor 8 to control the amplifier 5 so that this digital detection signal voltage becomes a specified value determined by measurement in advance. The background level B becomes a constant value and is manually inputted to the signal processing circuit 6 as a constant value during the inspection of the face plate to be inspected. However, it is assumed that no control signal is sent to the amplifier 5 during the inspection.

なお、以りのバックグラウンドレベルBの校11:は、
検査開始、基準面板を取り替えなどの際は、マイクロプ
ロセッサ8により、印加電圧の再設定とともに、増幅器
の利得が再調整されるものとする。
In addition, the following background level B school 11:
When starting an inspection, replacing the reference plate, etc., the microprocessor 8 resets the applied voltage and readjusts the gain of the amplifier.

第2図は、第1図に対する処理手順を示すフローチャー
トで、欠陥検出部に基準面板を装着し■、光電子増倍管
の印加電圧を設定する■。次に、バックグラウンドレベ
ルBを読み取り■、これと規定値と比較し■、等しいと
きは校正が終了して、検査工程に移行するが、等しくな
いときは、増幅器の利得が変更され■、規定値に調整さ
れる。
FIG. 2 is a flowchart showing the processing procedure for FIG. 1, in which a reference face plate is attached to the defect detection section (1) and the voltage applied to the photomultiplier tube is set (2). Next, read the background level B and compare it with the specified value. If they are equal, the calibration is completed and the process moves on to the inspection process. If they are not equal, the amplifier gain is changed and the specified value is adjusted to the value.

[発明の効果コ 以上の説明により明らかなように、この発明による検出
信号制御力式によれば、各種の表面状態に対して基準と
なる面板について、適応する光電子増倍管の印加電圧が
正確かつ容易に設定され、またそれらに対して、バック
グラウンドレベルBが一定値に校+F、されるもので、
iE確かつ迅速な面板欠陥検出を行うことができる効果
には、はなはだ大きいものがある。
[Effects of the Invention] As is clear from the above explanation, according to the detection signal control force formula according to the present invention, the voltage applied to the applicable photomultiplier tube can be accurately applied to the face plate that serves as a reference for various surface conditions. and can be easily set, and the background level B is calibrated to a constant value + F.
The effect of iE's ability to accurately and quickly detect face plate defects is extremely significant.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、この発明による面板欠陥検出装置の検出信号
制御方式の実施例における回路のブロック構成図、第2
図は、第1図に対する処理手順のフローチャート、第3
図は、暗視野受光方式による欠陥信号波形とその処理を
説明する波形図である。 1・・・基準面板、   2・・・面板搬送機構、3・
・・投光光学系、  4・・・光電子増倍管、5・・・
増幅器、    6・・・信号処理回路、7・・・A 
/ I)変換器、  8・・・マイクロプロセッサ、9
・V*ROM、   10−V”C0N111・・・電
源、■〜■・・・フローチャートのステップ。
FIG. 1 is a block configuration diagram of a circuit in an embodiment of a detection signal control method of a face plate defect detection device according to the present invention, and FIG.
The figure is a flowchart of the processing procedure for Figure 1,
The figure is a waveform diagram illustrating defect signal waveforms and their processing by the dark-field light reception method. DESCRIPTION OF SYMBOLS 1... Reference face plate, 2... Face plate conveyance mechanism, 3...
...Light projection optical system, 4...Photomultiplier tube, 5...
amplifier, 6...signal processing circuit, 7...A
/ I) converter, 8... microprocessor, 9
・V*ROM, 10-V"C0N111...Power supply, ■~■...Steps in the flowchart.

Claims (1)

【特許請求の範囲】[Claims] 面板の表面をレーザスポットにより走査し、該表面の欠
陥による散乱光を受光して、該欠陥を検出する面板欠陥
検出装置において、面板の処理プロセスによる表面状態
に対する基準面板を欠陥検出部に装着し、該検出部の受
光器として設けられている光電子増倍管の印加電圧を、
マイクロプロセッサの指示により上記基準面板に適応す
る印加電圧に設定し、上記基準面板を上記レーザスポッ
トにより走査してえられる上記光電子増倍管の出力電圧
を、増幅器によりレベル調整して上記マイクロプロセッ
サに入力し、該入力電圧が上記基準面板のバックグラウ
ンド電圧として、一定値となるように、上記マイクロプ
ロセッサにより、上記増幅器の利得を制御することを特
徴とする、面板欠陥検出装置の検出信号電圧制御方式。
In a face plate defect detection device that scans the surface of a face plate with a laser spot and detects defects by receiving scattered light due to defects on the surface, a reference face plate for the surface condition due to the face plate treatment process is attached to the defect detection part. , the voltage applied to the photomultiplier tube provided as a light receiver of the detection section,
An applied voltage suitable for the reference face plate is set according to instructions from the microprocessor, and the output voltage of the photomultiplier tube obtained by scanning the reference face plate with the laser spot is level-adjusted by an amplifier and sent to the microprocessor. Detection signal voltage control for a face plate defect detection device, characterized in that the gain of the amplifier is controlled by the microprocessor so that the input voltage becomes a constant value as the background voltage of the reference face plate. method.
JP27315886A 1986-11-17 1986-11-17 Detection signal voltage control system of face plate flaw detection apparatus Pending JPS63127147A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27315886A JPS63127147A (en) 1986-11-17 1986-11-17 Detection signal voltage control system of face plate flaw detection apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27315886A JPS63127147A (en) 1986-11-17 1986-11-17 Detection signal voltage control system of face plate flaw detection apparatus

Publications (1)

Publication Number Publication Date
JPS63127147A true JPS63127147A (en) 1988-05-31

Family

ID=17523913

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27315886A Pending JPS63127147A (en) 1986-11-17 1986-11-17 Detection signal voltage control system of face plate flaw detection apparatus

Country Status (1)

Country Link
JP (1) JPS63127147A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006133147A (en) * 2004-11-09 2006-05-25 Kowa Co Light measuring method and device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4960279A (en) * 1972-10-07 1974-06-11
JPS6038827A (en) * 1983-08-12 1985-02-28 Hitachi Ltd Calibration for sensitivity of automatic foreign substance inspecting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4960279A (en) * 1972-10-07 1974-06-11
JPS6038827A (en) * 1983-08-12 1985-02-28 Hitachi Ltd Calibration for sensitivity of automatic foreign substance inspecting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006133147A (en) * 2004-11-09 2006-05-25 Kowa Co Light measuring method and device

Similar Documents

Publication Publication Date Title
US4902131A (en) Surface inspection method and apparatus therefor
KR100400995B1 (en) Optical Wafer Positioning System
US5108176A (en) Method of calibrating scanners and arrangement for producing defined scattered light amplitudes
JPH0535983B2 (en)
JP2007256273A (en) Foreign matter inspection method and foreign matter inspection device
US6728596B1 (en) Wafer prealigner with phase sensitive detection
EP4027374A1 (en) Semiconductor sample inspection device and inspection method
JPS63127147A (en) Detection signal voltage control system of face plate flaw detection apparatus
US6515272B1 (en) Method and apparatus for improving signal to noise ratio of an aerial image monitor
JPS62276441A (en) Method and apparatus for inspection
JPH01120749A (en) Automatic focusing device for electron microscope
JP2000214102A (en) Foreign-matter detecting device and process line containing foreign-matter detecting device
US5796475A (en) Signal process method and apparatus for defect inspection
JPS59208446A (en) Laser type surface inspecting device
JPH0812061B2 (en) Surface inspection device
JPH0399207A (en) Inspection apparatus for mounting board
JPH0224538A (en) Apparatus for detecting fissure and crack
US20230360975A1 (en) System and method for high speed inspection of semiconductor substrates
JP3107026B2 (en) Transmission part shape inspection device
JPS62241348A (en) Inspection device for foreign matter on reticle
JPS62261045A (en) Surface inspecting device
JPS6035517A (en) Inspection device
JP2709946B2 (en) Foreign matter inspection method and foreign matter inspection device
JPH05340883A (en) Foreign matter inspecting device
JPS6021792Y2 (en) Defect detection device