JPS63126231A - Processor - Google Patents

Abstract

PURPOSE:To achieve high subexciting effect for accelerating the surface processing speed by a method wherein a reaction gas feeding means is provided in a reaction chamber. CONSTITUTION:A CVD device is provided with a reaction tube 4 comprising a box type vessel 3 wherein a gas leading-in part 1 is fixed to a sidewall while an exhaust pipe 2 is fixed to another sidewall opposing to the former sidewall. An ultraviolet ray lamp 6 is provided above an upper wall part 6 of the vessel 3 almost entirely made of quartz glass. Besides, a susceptor 7 is mounted on the bottom part of vessel 3. First, a semiconductor wafer 13 is mounted on the specified position of susceptor and then UV lamp 6 and a laser oscillator 12 are actuated to meet the processing requirements. Finally, reaction gas composed of ammonia and disilane is fed from the gas leading-in part 1 to form a film comprising silicon nitride.

Description

[Detailed description of the invention] [Industrial application field] The present invention relates to a technique that is effective when applied to surface treatment.

[Conventional technology]

For example, one of the surface treatment techniques used when manufacturing semiconductor devices is the so-called C VD (Chemical Vacuum
porDeposition), and this technology is explained in "Electronic Materials J 1985 Special Edition, p. 56, published by Kogyo Chosenkai Co., Ltd. on November 20, 1985.

In the above-mentioned CVD, a reaction gas is introduced into a reaction chamber equipped with, for example, an ultraviolet (hereinafter also referred to as UV) lamp as an excitation means to cause a reaction, and the reaction product is transferred to a semiconductor wafer installed in the reaction chamber. It is deposited on the surface to form a film.

[Problem that the invention seeks to solve]

However, some films that can be formed by applying the above-mentioned CVD, such as silicon nitride (SI3N4), are produced by introducing a reaction gas consisting of disilane (StzHs) and ammonia (NH4) into the reaction chamber. Even if UV irradiation is applied to some gases, reactions may not occur at a sufficient rate. Therefore, the inventors have found that in the above case, there is a problem in that it takes a long time to form a film.

An object of the present invention is to provide a technology that can improve the processing speed in surface treatment technology.

The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[Means for solving problems]

A brief overview of typical inventions disclosed in this application is as follows.

That is, for a processing apparatus equipped with a means for exciting a reaction gas in a reaction chamber, a reaction gas supply means having a preliminary excitation section is provided in the reaction chamber.

[Effect]

According to the above-described means, the pre-excited reaction gas can be quickly supplied to the reaction space, so that the reaction gas can be brought into a reaction state without attenuating its excited state. Therefore, a high pre-excitation effect can be obtained,
This makes it possible to effectively improve the surface treatment speed.

〔Example〕

FIG. 1 is a schematic explanatory diagram taken along the II cross section in FIG. 2, showing an optical CVD apparatus which is an embodiment of the present invention, and FIG. 2 is a schematic explanatory diagram taken along the ■-■ cross section in FIG. 1. It is.

The CVD apparatus of this embodiment is equipped with a reaction chamber 4 consisting of a box-shaped container 3 with a gas introduction section 1 on the negative side wall and an exhaust pipe 2 on the opposite side wall. .

The container 3 is almost entirely made of quartz glass, and an ultraviolet (UV) lamp (excitation means) 6 is installed above the top wall 5 of the container 3 . Further, a susceptor 7 is attached to the bottom of the container 3.

In this embodiment, the gas introduction section 1 is a gas introduction pipe 8.
It has a T-shape with a tubular tip 9 attached to the tip that communicates with the tube 8, and the tip 9 is located inside the reaction chamber 4. An air supply hole 10 is formed in the peripheral wall of this tip 9 at a position opposite to the connection position of the gas introduction pipe 8, and windows (irradiation part) 11 made of quartz glass are attached to both ends of the air supply hole 10. There is. Also, outside of container 3,
A UV radar oscillator 12 is installed at a position where it can irradiate the window 11 of the tip 9 perpendicularly.

Next, regarding the effect of this example, silicon nitride (S13N4
) The formation of a film will be explained as a specific example.

First, the semiconductor wafer 13 is placed in a predetermined position on the susceptor 7, and then the UV lamp 6 and the laser oscillator 12 are activated to set the processing conditions.

Thereafter, a reaction gas containing ammonia (NH3) and disilane (SxzHg) as reaction components is supplied from the gas introduction part 1 to the reaction chamber 4. By continuing to supply this reaction gas for a predetermined period of time, it is possible to form a film made of silicon nitride.

In this way, the following effects can be obtained in this embodiment.

(1) By supplying the reaction gas to the reaction chamber 4 from the gas introduction part in which the window of the tip part 9 located in the reaction chamber 4 is irradiated with UV laser, the UV laser is emitted at the tip part. The irradiated and pre-excited reactant gas is immediately
Since it can be moved to the reaction space where the reaction occurs upon receiving excitation by the irradiation of the V lamp 6, the reaction can be carried out without reducing the effect of preliminary excitation.

(2) According to (1) above, the reaction rate in the reaction space can be improved, so the deposition rate of the silicon nitride film can be greatly improved.

(3) According to (2) above, the time required for the CVD process can be shortened, so that the throughput can be improved.

Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.

For example, although windows 11 made of quartz glass are formed at both ends as a preliminary excitation section, the structure, the material for forming the same, etc. are not limited to those of the embodiments. Further, even in the case of using a tubular structure as in the embodiment, the window on the opposite side to the window through which the laser is incident may be made to have a mirror surface.

By doing so, the incident laser can be reflected and the reaction efficiency can be further improved.

Further, the preliminary excitation means is not limited to the UV Rade oscillator, but may also be a simple UV lamp.

Furthermore, the energy for preliminary excitation is not limited to UV, and various excitation means such as causing discharge can be used depending on the type of reaction.

In the above explanation, the invention made by the present inventor has mainly been explained with respect to the optical CVD apparatus, which is the field of application of the invention, but it is not limited to this. It is effective when applied to various processing techniques as long as the surface of an object is treated.

〔Effect of the invention〕

A brief explanation of the effects obtained by typical inventions disclosed in this application is as follows.

That is, for a processing apparatus equipped with a means for exciting a reaction gas in a reaction chamber, by providing a reaction gas supply means having a pre-excitation section in the reaction chamber, the pre-excited reaction gas can be promptly supplied to the reaction space. , the gas can be transferred to a reactive state without attenuating its excited state. Therefore, a high preliminary excitation effect can be obtained, and an improvement in surface treatment speed can be effectively achieved.

[Brief explanation of the drawing]

FIG. 1 is a schematic explanatory diagram taken along the II cross section in FIG. 2, showing a photo-CVD apparatus which is an embodiment of the present invention. FIG. 2 is a schematic explanatory diagram taken along the ■-■ cross section in FIG. 1. . 1... Gas introduction part, 2... Exhaust pipe, 3... Container,
4...Reaction chamber, 5...Upper wall, 6...Ultraviolet (U)
V) lamp (excitation means), 7... susceptor, 8...
Gas introduction pipe, 9... tip, 10... air supply hole, 11
... window (irradiation part), 12 ... UV laser oscillator, 1
3...Semiconductor r\'''1 L, press,''

Claims (1)

[Scope of Claims] 1. A processing apparatus equipped with means for exciting a reaction gas in a reaction chamber, wherein a reaction gas supply means having a preliminary excitation section is installed in the reaction chamber. 2. The processing apparatus according to claim 1, wherein the reaction gas supply means is a gas introduction section in which an excitation light irradiation section is formed. 3. The processing apparatus according to claim 2, wherein the irradiation section is formed at the tip of the gas introduction section.