JPS63122230A - Wafer inspecting device - Google Patents
Wafer inspecting deviceInfo
- Publication number
- JPS63122230A JPS63122230A JP61269140A JP26914086A JPS63122230A JP S63122230 A JPS63122230 A JP S63122230A JP 61269140 A JP61269140 A JP 61269140A JP 26914086 A JP26914086 A JP 26914086A JP S63122230 A JPS63122230 A JP S63122230A
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- semiconductor element
- data
- semiconductor
- measured
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 67
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- 238000007689 inspection Methods 0.000 claims description 18
- 238000005259 measurement Methods 0.000 abstract description 13
- 239000000523 sample Substances 0.000 abstract description 6
- 230000002950 deficient Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000013500 data storage Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000015654 memory Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Landscapes
- Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的コ
（産業上の利用分野）
本発明は、半導体素子の製造工程において、半導体ウェ
ハ上に形成された半導体素子の検査測定を行い、この半
導体素子の良否を判定するウェハ検査装置に関する。Detailed Description of the Invention [Purpose of the Invention (Industrial Field of Application) The present invention is to inspect and measure semiconductor elements formed on a semiconductor wafer in the manufacturing process of semiconductor elements, and to determine the quality of the semiconductor elements. The present invention relates to a wafer inspection device that determines .
（従来の技術）
従来、例えば半導体素子の製造工程における中間検査等
において、半導体ウェハ上に形成された半導体素子の検
査測定を行い、この半導体素子の良否を判定するウェハ
検査装置は、多数の探針を備え、この探針を半導体素子
の所定の電極バットに接触させて、所定の電圧、電流を
供給するとともに、半導体素子からの出力を測定して、
この半導体素子の良否を判定するウェハ検査装置が用い
られている。(Prior Art) Conventionally, wafer inspection equipment that performs inspection measurements on semiconductor elements formed on a semiconductor wafer and determines the quality of the semiconductor elements, for example, during intermediate inspections in the manufacturing process of semiconductor elements, has been used with a large number of detectors. A probe is provided, the probe is brought into contact with a predetermined electrode butt of a semiconductor element, a predetermined voltage and current are supplied, and the output from the semiconductor element is measured.
A wafer inspection device is used to determine the quality of these semiconductor devices.
また、最近では研究用の試験方法として、半導体素子に
、ビーム径が１μｍ程度に収束されたレーザビームを照
射して、例えば半導体素子のラッチアップ耐量の評価等
を行なう方法も開発されている。Furthermore, recently, a method has been developed as a testing method for research, in which a semiconductor device is irradiated with a laser beam focused to a beam diameter of about 1 μm to evaluate, for example, the latch-up resistance of the semiconductor device.
すなわち、このような方法では、半導体素子の所定部位
に微細なビーム径に収束されたレーザビ−ムを照射する
ことにより、その部位に電子−正孔対を発生させ、この
電子−正孔対によって半導体素子内に流れる電流および
その変化を測定するもので、例えば半導体素子の各部位
におけるラッチアップ耐量の評価等を行なう。In other words, in this method, by irradiating a predetermined part of a semiconductor element with a laser beam focused to a fine beam diameter, electron-hole pairs are generated in that part, and these electron-hole pairs cause It measures the current flowing in a semiconductor element and its changes, and is used, for example, to evaluate the latch-up resistance of each part of the semiconductor element.
（発明が解決しようとする問題点）
上述のように従来は、半導体素子の製造工程における中
間検査等において、半導体ウェハ上に形成された半導体
素子の検査測定を行い、この半導体素子の良否を判定す
るウェハ検査装置としては、レーザビームを用いたウェ
ハ検査装置はない。(Problems to be Solved by the Invention) As mentioned above, in the past, during intermediate inspections in the manufacturing process of semiconductor elements, inspection and measurement of semiconductor elements formed on semiconductor wafers were performed to determine the quality of the semiconductor elements. There is no wafer inspection device that uses a laser beam.
また、例えば上述のようなビーム径が１μｌ程度に収束
されたレーザビームを照射する試験装置等を、製造工程
において半導体素子の良否を判定するウェハ検査装置と
して用いた場合、微細なビーム径のレーザビームを半導
体素子全体に照射するレーザビームの走査に時間を要し
、測定時間が長くなり、実際上製造工程で使用すること
は、困難であった。For example, when a test device that irradiates a laser beam with a focused beam diameter of about 1 μl as described above is used as a wafer inspection device to determine the quality of semiconductor devices in the manufacturing process, It takes time to scan the laser beam to irradiate the entire semiconductor element, which increases the measurement time, making it difficult to use it in the manufacturing process.
さらに、特にＭＯＳメモリや論理回路等の半導体チップ
の検査においては、高価なテスタを必要としていた。Furthermore, particularly in testing semiconductor chips such as MOS memories and logic circuits, expensive testers are required.
本発明は、かかる従来の事情に対処してなされたもので
、レーザビームを用いて短時間で半導体素子の良否を判
定することができ、半導体製造工程において使用するこ
とのできるウェハ検査装置を提供しようとするものであ
る。The present invention has been made in response to such conventional circumstances, and provides a wafer inspection device that can determine the quality of semiconductor elements in a short time using a laser beam and can be used in semiconductor manufacturing processes. This is what I am trying to do.
［発明の構成］
（問題点を解決するための手段）
すなわち本発明は、少なくとも１０μｍ以上の大径なビ
ーム径のレーザビームをウェハ上に形成された半導体素
子に照射する手段と、前記レーザビームの照射により前
記半導体素子に生じる電気的な変化を測定する手段と、
該手段により測定された結果から半導体素子の良否を判
定する手段とを備えたことを特徴とする。[Structure of the Invention] (Means for Solving the Problems) That is, the present invention provides a means for irradiating a semiconductor element formed on a wafer with a laser beam having a large beam diameter of at least 10 μm; means for measuring electrical changes occurring in the semiconductor element due to irradiation;
The present invention is characterized by comprising means for determining the quality of the semiconductor element from the results measured by the means.
（作 用）
本発明のウェハ検査装置では、例えば１１１！１等、少
なくとも１０μｍ以上の大径なビーム径のレーザビーム
を半導体素子に照射し、レーザビームの照射により半導
体素子に生じる電気的な変化例えば電源電流の変化を測
定して、例えばその結果と良品半導体素子の場合の測定
結果とを比較し半導体素子の良否を判定する。(Function) In the wafer inspection apparatus of the present invention, a semiconductor element is irradiated with a laser beam having a large beam diameter of at least 10 μm, such as 111!1, and electrical changes occur in the semiconductor element due to the laser beam irradiation. For example, the change in power supply current is measured, and the result is compared with the measurement result for a non-defective semiconductor element to determine whether the semiconductor element is good or bad.
また、レーザビームのビーム径は、例えば半導体素子の
良否を判定することのできる最大の径等とし、レーザビ
ームの走査に要する時間を短くし、短時間で測定を行な
うことができる。In addition, the beam diameter of the laser beam is set to, for example, the maximum diameter that can determine the quality of the semiconductor element, thereby reducing the time required for scanning the laser beam and making it possible to perform measurements in a short time.
（実施例）
以下本発明のウェハ検査装置を図面を参照して一実施例
について説明する。(Embodiment) An embodiment of the wafer inspection apparatus of the present invention will be described below with reference to the drawings.
図に示すウェハ検査装置は、半導体ウェハ１が載置され
るＸ−Ｙテーブル２と、半導体ウェハ１表面に形成され
た半導体素子の所定部位に接触される複数の探針３およ
びこれらの探針３を介して半導体素子に所定の電気信号
を供給するとともに半導体素子からの出力信号を測定す
る測定部４と、この測定部４によって測定されたデータ
を収容するデータ収容部５と、データ収容部５に収容さ
れたデータとあらかじめ収容された良品半導体素子の測
定データとを比較するデータ比較部６、および半導体ウ
ェハ１にレーザビームを照射するレーザビーム照射部７
とから構成されている。The wafer inspection apparatus shown in the figure includes an X-Y table 2 on which a semiconductor wafer 1 is placed, a plurality of probes 3 that come into contact with predetermined parts of semiconductor elements formed on the surface of the semiconductor wafer 1, and these probes. a measuring section 4 that supplies a predetermined electric signal to the semiconductor element via the semiconductor element 3 and measures an output signal from the semiconductor element; a data storage section 5 that stores data measured by the measurement section 4; and a data storage section a data comparison unit 6 that compares the data stored in the wafer 5 with measurement data of good semiconductor devices stored in advance; and a laser beam irradiation unit 7 that irradiates the semiconductor wafer 1 with a laser beam.
It is composed of.
レーザビーム照射部７は、例えばＨｅ −Ｎ ｅレーザ
等のレーザ光源７ａと、レーザ光源７ａからのレーザ光
を所定の範囲内に走査する走査系７ｂと、走査系７ｂか
らのレーザ光を所定のビーム径のレーザビームとする光
学系７Ｃとから構成されている。The laser beam irradiation unit 7 includes a laser light source 7a such as a He-Ne laser, a scanning system 7b that scans the laser light from the laser light source 7a within a predetermined range, and a scanning system 7b that scans the laser light from the scanning system 7b within a predetermined range. It is composed of an optical system 7C that generates a laser beam with a beam diameter.
このレーザ光のビーム径は、少なくとも、１０μｍ以上
例えば１１１等とされている。このビーム径は、良品の
半導体素子に照射して測定を行なった場合と、不良品の
半導体素子に照射して測定を行なった場合とで識別可能
な差異を生じる範囲内で最大とすることが好ましく、例
えば半導体素子全体に半導体素子と同様な大きさのビー
ム径を有するレーザビームを照射してもよく、例えば数
個の半導体素子を同時に測定可能に構成されたマルチチ
ャンネルの装置の場合は、数個の半導体素子を同時に照
射可能な大径なレーザビームとしてもよい、このような
場合は、レーザビームを走査する必要がない。The beam diameter of this laser light is at least 10 μm or more, for example, 111 μm. This beam diameter should be set to the maximum within the range that produces a discernible difference between when a good semiconductor element is irradiated and measured and when a defective semiconductor element is irradiated and measured. Preferably, for example, the entire semiconductor device may be irradiated with a laser beam having a beam diameter similar to that of the semiconductor device. For example, in the case of a multi-channel device configured to be able to measure several semiconductor devices simultaneously, A large diameter laser beam that can simultaneously irradiate several semiconductor devices may be used; in such a case, there is no need to scan the laser beam.
なお、このようなビーム径は、測定する半導体素子の種
類、レーザビームの種類および出力等によって異なるた
め、予め実測等によって求めておく必要がある。Note that such a beam diameter differs depending on the type of semiconductor element to be measured, the type and output of the laser beam, and therefore needs to be determined in advance by actual measurement or the like.
すなわち、この実施例のウェハ検査装置では、レーザビ
ームを走査系７ｂによって走査し、光学系７ｃによって
例えば１酊等のビーム径としたレーザビームを半導体素
子表面全体に照射する。そしてこの時の、例えば半導体
素子の電源電流の変化を測定部４によって探針３を介し
て測定し、走査系７ｂの走査信号からレーザビームのＸ
およびＹ方向の照射位置のデータと、電源電流の変化を
３次元的なデータとしてデータ収容部５内に収容し、測
定の終了した時点で、データ比較部６において、この測
定データと、例えば良品の半導体素子について測定を行
なったデータとを沈毅し、測定した半導体素子の良否を
判定する。That is, in the wafer inspection apparatus of this embodiment, the scanning system 7b scans the laser beam, and the optical system 7c irradiates the entire surface of the semiconductor element with a laser beam having a beam diameter of, for example, 1 mm. At this time, for example, the change in the power supply current of the semiconductor element is measured by the measurement unit 4 through the probe 3, and the X of the laser beam is measured from the scanning signal of the scanning system 7b.
The data on the irradiation position in the Y direction and the change in power supply current are stored as three-dimensional data in the data storage section 5, and when the measurement is completed, the data comparison section 6 compares this measurement data with, for example, a non-defective product. The quality of the measured semiconductor element is determined by settling the data obtained by measuring the semiconductor element.
したがって、半導体製造工程等においても、レーザビー
ムによる走査を短時間で行なうことができ、短時間で半
導体素子の良否を判定することができる。特に、ＭＯＳ
メモリや論理回路のＩＣチップにおいても検査が可能で
ある。Therefore, even in a semiconductor manufacturing process, scanning with a laser beam can be performed in a short time, and the quality of a semiconductor element can be determined in a short time. In particular, MOS
It is also possible to test IC chips for memory and logic circuits.
［発明の効果コ
上述のように、本発明のウェハ検査装置では、レーザビ
ームを用いて短時間で半導体素子の良否を判定すること
ができ、半導体製造工程において使用することができる
。[Effects of the Invention] As described above, the wafer inspection apparatus of the present invention can determine the quality of semiconductor elements in a short time using a laser beam, and can be used in semiconductor manufacturing processes.
図は本発明の一実施例のウェハ検査装置を示す構成図で
ある。
１・・・・・・半導体ウェハ、４・・・・・・測定部、
５・・・・・・データ収容部、６・・・・・・データ比
較部、７・・・・・・レーザ照射部。The figure is a configuration diagram showing a wafer inspection apparatus according to an embodiment of the present invention. 1... Semiconductor wafer, 4... Measurement section,
5...Data storage section, 6...Data comparison section, 7...Laser irradiation section.
Claims (2)
ザビームをウェハ上に形成された半導体素子に照射する
手段と、前記レーザビームの照射により前記半導体素子
に生じる電気的な変化を測定する手段と、該手段により
測定された結果から半導体素子の良否を判定する手段と
を備えたことを特徴とするウェハ検査装置。(1) means for irradiating a semiconductor element formed on a wafer with a laser beam having a large beam diameter of at least 10 μm; and means for measuring electrical changes occurring in the semiconductor element due to the irradiation with the laser beam; A wafer inspection apparatus comprising: means for determining the quality of semiconductor elements from the results measured by said means.
１ｍｍのレーザビームを照射し、このレーザビームを走
査して半導体素子のほぼ全面に照射するものである特許
請求の範囲第１項記載のウェハ検査装置。(2) The means for irradiating a laser beam irradiates a laser beam with a beam diameter of approximately 1 mm, and scans this laser beam to irradiate almost the entire surface of the semiconductor element. Wafer inspection equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61269140A JPH0727935B2 (en) | 1986-11-12 | 1986-11-12 | Wafer inspection system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61269140A JPH0727935B2 (en) | 1986-11-12 | 1986-11-12 | Wafer inspection system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63122230A true JPS63122230A (en) | 1988-05-26 |
| JPH0727935B2 JPH0727935B2 (en) | 1995-03-29 |
Family
ID=17468245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61269140A Expired - Fee Related JPH0727935B2 (en) | 1986-11-12 | 1986-11-12 | Wafer inspection system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0727935B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5227767A (en) * | 1990-02-27 | 1993-07-13 | Nissan Motor Co., Ltd. | Instrument arrangement for automotive vehicle |
| JP2007315954A (en) * | 2006-05-26 | 2007-12-06 | Yazaki Corp | Display device for vehicle |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56131940A (en) * | 1980-03-19 | 1981-10-15 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Laser scanning microscope device |
| JPS5780731A (en) * | 1980-11-07 | 1982-05-20 | Toshiba Corp | Detecting device for improper semiconductor |
| JPS60153136A (en) * | 1984-01-21 | 1985-08-12 | Semiconductor Res Found | Electrode probe for photo irradiation |
-
1986
- 1986-11-12 JP JP61269140A patent/JPH0727935B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56131940A (en) * | 1980-03-19 | 1981-10-15 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Laser scanning microscope device |
| JPS5780731A (en) * | 1980-11-07 | 1982-05-20 | Toshiba Corp | Detecting device for improper semiconductor |
| JPS60153136A (en) * | 1984-01-21 | 1985-08-12 | Semiconductor Res Found | Electrode probe for photo irradiation |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5227767A (en) * | 1990-02-27 | 1993-07-13 | Nissan Motor Co., Ltd. | Instrument arrangement for automotive vehicle |
| JP2007315954A (en) * | 2006-05-26 | 2007-12-06 | Yazaki Corp | Display device for vehicle |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0727935B2 (en) | 1995-03-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |