JPS63122034A - Magneto-optical recording medium - Google Patents

Magneto-optical recording medium

Info

Publication number
JPS63122034A
JPS63122034A JP26751586A JP26751586A JPS63122034A JP S63122034 A JPS63122034 A JP S63122034A JP 26751586 A JP26751586 A JP 26751586A JP 26751586 A JP26751586 A JP 26751586A JP S63122034 A JPS63122034 A JP S63122034A
Authority
JP
Japan
Prior art keywords
magneto
film
disk
optical
added
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP26751586A
Other languages
Japanese (ja)
Other versions
JP2539397B2 (en
Inventor
Fumiyoshi Kirino
文良 桐野
Shinji Takayama
高山 新司
Akio Shiga
志賀 明夫
Yoshio Suzuki
良夫 鈴木
Norio Ota
憲雄 太田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP61267515A priority Critical patent/JP2539397B2/en
Publication of JPS63122034A publication Critical patent/JPS63122034A/en
Application granted granted Critical
Publication of JP2539397B2 publication Critical patent/JP2539397B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582Record carriers characterised by the selection of the material or by the structure or form
    • G11B11/10586Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
    • G11B11/10589Details

Landscapes

  • Thin Magnetic Films (AREA)

Abstract

PURPOSE:To prevent oxidation of a recording film so as to improve the corrosion resistance of a disk and to extend the life thereof by adding 3-8atom% Ta to a magneto-optical disk recording medium essentially consisting of a rare earth-iron family element. CONSTITUTION:An SiO2 film having 1,000Angstrom film thickness is formed by sputtering or the like on a substrate 1 made of cleaned glass or heat resistant resin. The film is formed under the conditions of using a sintered SiO body as a target material and Ar as a discharge gas and 5mmTorr discharge gaseous pressure 1W/cm<2> RF power to be thrown and 10min sputtering time. The magneto-optical recording film 3 having the compsn. Tb26Fe62Co12 is then formed to 1,000Angstrom thickness by a sputtering method. A mosaic-shaped composite target formed by using an FeCo alloy for a target substrate and arraying uniformly chips of Tb and Ta thereon is used. Ta is added at 3-5atm% to the film by controlling the content of Ta by the number of the chips to be arrayed, by which the corrosion resistance is improved and the life of the disk is greatly extended without degrading the magnetic and magneto-optical characteristics thereof.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、レーザーを用いて記録、再生、消去を行なう
光磁気記録に係り、特にディスクの長寿命化に好適な記
録媒体に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to magneto-optical recording in which recording, reproduction and erasing are performed using a laser, and particularly to a recording medium suitable for extending the life of a disk.

〔従来の技術〕[Conventional technology]

近年、高密度かつ大容量の情報の任意読み出し書換え可
能な光磁気記録が注目されている。現在この光磁気記録
媒体として希土類−鉄族系非晶質合金が研究の中心にあ
り、中でもTbFeCo非晶質合金は最も実用化に近い
段階にある。しがしながらこれらの材料は、大気中の酸
素や水に対して活性で、水酸化物或いは酸化物を生成す
る。この反応は、時間の経過とともに媒体の表面から膜
内部へ進行してゆく。その結果、記録媒体の磁気及び磁
気光学特性(例えばKerr回転角、保磁力、飽和磁化
等)が低下していた。そこで、従来の光磁気ディスクで
は、光磁気記録材料に防食効果を有する元素を添加して
高耐食性を持たせるという手法或いは光磁気記録膜表面
に保護膜を形成して大気中から記録膜を遮断する手法の
2つの手法が考えられてきた。このうち、前者の手法の
みを用いると、保護膜形成を省略でき、プロセスの簡略
化〔発明が解決しようとする問題点〕 光磁気ディスク用磁性膜の耐食性向上をめざして、見い
出された上記公知例には次のような問題があった。すな
わち、希土類−鉄族系合金に耐食性向上のための添加元
素を加えて′ゆくと、添加量の増加に伴ない耐食性は向
上するが、光磁気特性は逆に低下してしまう、そこで、
光磁気特性を低下させずに光磁気記録膜の耐食性を向上
させることができるような添加元素及びその添加量を見
出す必要があった。
In recent years, magneto-optical recording that allows arbitrary reading and rewriting of high-density and large-capacity information has attracted attention. Currently, rare earth-iron group amorphous alloys are the focus of research as magneto-optical recording media, and among them, TbFeCo amorphous alloy is at the closest stage to practical application. However, these materials are active against oxygen and water in the atmosphere and produce hydroxides or oxides. This reaction progresses from the surface of the medium to the inside of the membrane over time. As a result, the magnetic and magneto-optical properties (eg, Kerr rotation angle, coercive force, saturation magnetization, etc.) of the recording medium have deteriorated. Therefore, in conventional magneto-optical disks, the methods of adding elements with an anti-corrosion effect to the magneto-optical recording material to provide high corrosion resistance, or forming a protective film on the surface of the magneto-optical recording film to shield the recording film from the atmosphere. Two methods have been considered to do this. Of these, if only the former method is used, the formation of a protective film can be omitted and the process can be simplified (a problem that the invention aims to solve). The example problem was as follows: That is, when additive elements are added to rare earth-iron group alloys to improve corrosion resistance, the corrosion resistance improves as the amount added increases, but the magneto-optical properties deteriorate.
It was necessary to find an additive element and an amount thereof that can improve the corrosion resistance of the magneto-optical recording film without deteriorating the magneto-optical properties.

本発明の目的は、光磁気記録膜の光磁気特性を低下させ
ることなく、耐食性を向上させることにより、長寿命か
つ高信頼性を有する光磁気ディスクを提供することにあ
る。
An object of the present invention is to provide a magneto-optical disk having a long life and high reliability by improving corrosion resistance without deteriorating the magneto-optical properties of the magneto-optical recording film.

〔問題点を解決するための手段〕[Means for solving problems]

上記の目的は、希土類−鉄族系元素を主体とする光磁気
記録材料にTaを添加することにより達成される。、T
aが他の元素より有利なのは、十分な耐食性が得られる
2〜8 atm%Ta  を添加したS囲では、光磁気
特性(Kerr回転角、保磁力及びキューり温度)が大
きく低下しないためである。
The above object is achieved by adding Ta to a magneto-optical recording material mainly composed of rare earth-iron group elements. , T
The reason why a is more advantageous than other elements is that the magneto-optical properties (Kerr rotation angle, coercive force, and quenching temperature) do not decrease significantly in the S range with 2 to 8 atm% Ta added, which provides sufficient corrosion resistance. .

〔作用〕[Effect]

Taは通常表面に酸化物不動態被膜が存在しているため
に、腐食の進行を抑制されている。この元素を環境に対
して活性な希土類−鉄族元素を主体とした光磁気記録膜
に添加すると、膜表面に相対的にTaが濃縮し不動態被
膜が形成されるため。
Since Ta usually has an oxide passive film on its surface, the progress of corrosion is suppressed. When this element is added to a magneto-optical recording film mainly composed of rare earth-iron group elements that are active in the environment, Ta is relatively concentrated on the film surface and a passive film is formed.

空気中の水分や酸素に対して不活性となる。この被膜に
より光磁気記録膜は外気から保護される。
Inert to moisture and oxygen in the air. This coating protects the magneto-optical recording film from the outside air.

〔実施例〕〔Example〕

以下5本発明を実施例1〜6により詳細に説明する。 The present invention will be explained in detail using Examples 1 to 6 below.

[実施例13 作成した光磁気ディスクの断面構造の模式図を第2図に
示す。洗浄したガラスまたは耐熱性の樹脂製の基板1上
にスパッタ他により膜厚1000人のSiO膜2を作成
した。その時の条件は、ターゲツト材にSiO焼結体を
、放電ガスにArを用い、放電ガス圧5mTorr、投
入RF電力IW/d、スパッタ時間10分である。これ
につづいて膜厚1000人でTbxe FeexCox
xなる組成を有する光磁気記録膜3をスパッタ法により
形成した。
[Example 13 A schematic diagram of the cross-sectional structure of the produced magneto-optical disk is shown in FIG. An SiO film 2 with a thickness of 1000 was formed on a substrate 1 made of cleaned glass or heat-resistant resin by sputtering or the like. The conditions at that time were as follows: a SiO sintered body was used as the target material, Ar was used as the discharge gas, the discharge gas pressure was 5 mTorr, the input RF power was IW/d, and the sputtering time was 10 minutes. Following this, Tbxe FeexCox with a film thickness of 1000 people
A magneto-optical recording film 3 having a composition x was formed by sputtering.

今 ターゲット基板にF a Co 179.金を用いその
上にTb及びTaのチップを均一に並べたモザイク状の
複合ターゲットを用いた。また、スパッタの条件は、放
電ガスにArを、放電ガス圧5×10″″2(Torr
) 、投入RF電力IW/cd、そしてスパッタ時間は
3分である。またスパッタ前には3x10″″7(To
rr)以下まで排気した。また、耐食性を向上させるた
めに加えるTa量は、並べるチップの枚数により制御し
た。
Now apply F a Co 179 to the target substrate. A mosaic-like composite target made of gold and having Tb and Ta chips evenly arranged thereon was used. The sputtering conditions were as follows: Ar was used as the discharge gas, and the discharge gas pressure was 5×10''2 (Torr).
), input RF power IW/cd, and sputtering time are 3 minutes. Also, before sputtering, 3x10''7 (To
rr) or below. Further, the amount of Ta added to improve corrosion resistance was controlled by the number of chips arranged.

このようにして作成した光磁気ディスクのTa添加量と
磁気及び磁気光学特性(Kerr回転角=θK。
The amount of Ta added and the magnetic and magneto-optical properties of the magneto-optical disk prepared in this way (Kerr rotation angle = θK.

保磁カニHc、キューり温度:Tc)の関係を第3図に
示す、まず、Taを含まないTbx8Fef1mCox
sのθにはQ、54’  、Haは8 、 Okoeで
、Tcは200℃であった。この材料にTaを添加する
と、曲線4に示すように0には徐々に減少してゆき、 
 7atm%以上の添加でθには急激に減少する。
Figure 3 shows the relationship between coercivity Hc and cue temperature Tc. First, Tbx8Fef1mCox, which does not contain Ta,
Theta of s was Q, 54', Ha was 8, Okoe, and Tc was 200°C. When Ta is added to this material, it gradually decreases to 0 as shown in curve 4.
Addition of 7 atm % or more causes a sharp decrease in θ.

HCは曲線5に示すようにTaの添加量の増加に反比例
して減少する。また、Taは曲線6に示すようにTaの
添加量の増加とともにゆるやかに減少してゆく、このよ
うにTaを添加量の増加とともにθに、Ha 、Taは
減少してゆく。ここで、これら特性を実用レベル(Hc
)2koa 、 Tc ”200℃、θに一≧−0,3
@)以上にするにはco量を増加させてθに、Tcを上
げ、希土類元素と鉄族元素の比を変えてHCを増加させ
る。このことにより、Ta添加により低下した分は補え
るので、実用材料を設計する上では特性低下は問題にな
らない。
As shown in curve 5, HC decreases in inverse proportion to the increase in the amount of Ta added. Further, as shown in curve 6, Ta gradually decreases as the amount of Ta added increases.In this way, as the amount of Ta increases, Ha and Ta decrease to θ. Here, we set these characteristics at a practical level (Hc
)2koa, Tc ”200℃, θ≧−0,3
@) In order to achieve the above, the amount of co is increased to θ, Tc is increased, and the ratio of rare earth elements to iron group elements is changed to increase HC. As a result, the decrease in properties due to the addition of Ta can be compensated for, so the decrease in properties is not a problem when designing practical materials.

このようにして作成した光磁気ディスクの耐食性試験を
次の3つの手法により行なった。すなわち、高温高湿度
試験、孔食試験、そして高温酸化試験の3つである。高
温高湿度試験は、作成したディスク温度80℃、相対湿
度95%め雰囲気中に500時間おいた時の飽和磁化(
Ms)の経時変化を測定した。また、高温酸化試験は、
作成したディスクを温度200℃の乾燥空気中に保存し
たきの飽和磁化(Ms)の経時変化を測定した。
Corrosion resistance tests were conducted on the magneto-optical disks prepared in this manner using the following three methods. That is, there are three tests: high temperature high humidity test, pitting corrosion test, and high temperature oxidation test. The high temperature and high humidity test was conducted to determine the saturation magnetization (
Ms) was measured over time. In addition, high temperature oxidation test
The produced disk was stored in dry air at a temperature of 200° C., and the change in saturation magnetization (Ms) over time was measured.

そして、孔食試験は、液温25℃にて1規定塩化ナトリ
ウム水溶液(IN−NaCQ  と以下略す:に試料を
一定時間浸せきしたときの膜の光透過率の経時変化を測
定した0以上、3つの試験結果を第1図にまとめて示す
、まず曲線7は、高温高湿度試験結果で、80℃−95
%RH中に500時間保存後のMsの変化のTa濃度依
存性を示している。このグラフよりわかるように、Ta
を添加していないT b F e Co膜における飽和
磁化の変化率は、初期の43%の増加であった。これに
Taを添加してゆくと添加量の増加に伴ない飽和磁化の
変化率は添激に低下する。そしてさらにTaを添加して
2 、5 atm%以上では、はぼ5%の増加であった
。また孔食試験における膜の光透過率の変化を曲線8に
示す。この図より約2 atm%付近に膜の光透過率の
変化量のピークが存在していることがわかる。そしてさ
らにこれにTaを加えると急激に光透過率の変化量は減
少する。このことがら孔食の抑制には、Taを3%以上
T b F e Coに添加が効果がある。そして、高
温酸化試験の結果を示したのが曲線9である。200℃
中に試料を;  100時間保存すると、Taを含まな
いTbFeCc系簿膜の飽和磁化の変化率は200%と
著しく大きかった。この系にTaを添加してゆくと添加
量2 atm% までは徐々にMsの変化率は小さくな
っ 。
In the pitting corrosion test, the change in light transmittance of the film over time was measured when the sample was immersed in a 1N sodium chloride aqueous solution (IN-NaCQ) for a certain period of time at a liquid temperature of 25°C. The test results are summarized in Figure 1. First, curve 7 is the high temperature and high humidity test result.
It shows the Ta concentration dependence of the change in Ms after storage in %RH for 500 hours. As you can see from this graph, Ta
The rate of change in saturation magnetization in the T b Fe Co film not added was an initial increase of 43%. When Ta is added to this, the rate of change in saturation magnetization decreases dramatically as the amount added increases. When Ta was further added to 2.5 atm% or more, the increase was approximately 5%. Curve 8 shows the change in light transmittance of the film in the pitting corrosion test. It can be seen from this figure that there is a peak in the amount of change in the light transmittance of the film around about 2 atm%. When Ta is further added to this, the amount of change in light transmittance decreases rapidly. For this reason, adding 3% or more of Ta to T b Fe Co is effective in suppressing pitting corrosion. Curve 9 shows the results of the high temperature oxidation test. 200℃
When the sample was stored for 100 hours, the rate of change in saturation magnetization of the Ta-free TbFeCc film was as large as 200%. As Ta is added to this system, the rate of change in Ms gradually decreases until the amount added is 2 atm%.

てゆき、2atm% と3 atm%の間で急激に低下
し、それ以降Msの変化率は約10%とほぼ一定となっ
た。
Then, it suddenly decreased between 2 atm% and 3 atm%, and after that, the rate of change in Ms remained almost constant at about 10%.

以上の結果を統合するとTaを3〜8 atm%添加す
ると、磁気及び磁気光学特性を低下させることなく耐食
性を向上させることができ、ディスク寿命を大きく伸す
ることができた。
Combining the above results, adding 3 to 8 atm % of Ta can improve corrosion resistance without deteriorating magnetic and magneto-optical properties, and greatly extend the life of the disk.

これらの光磁気ディスク(Taを4atm%以上含むデ
ィスク)のC/N (キャリア対ノイズ比)は55dB
で80℃−95%RH中に500時間保存してもほとん
ど経時変化を示さない。このことがらTa添加は著しく
耐食性向上に著しく有用であることがわかる。
The C/N (carrier-to-noise ratio) of these magneto-optical disks (disks containing 4 atm% or more of Ta) is 55 dB.
Even if it is stored for 500 hours at 80°C and 95% RH, it shows almost no change over time. This shows that the addition of Ta is extremely useful for improving corrosion resistance.

[実施例2] 作成した光磁気ディスクの断面構造は、実施例1と同様
で第2図に示すとおりである。光磁気ディグの作成はイ
ンライン型マグネトロンスパッタ装置を用いて行なった
。洗浄したガラスまたは耐熱性樹脂基板l上に、スパッ
タ法で膜厚1000人のAl2N膜2を作成した6作成
条件は、へ〇N焼結体をターゲットとし、放電ガスに4
0%N260%Ar標準混合ガスを用い、放電ガス圧5
■Torr、投入RF電力I W/cal、スパッタ時
間は10分である。つづいて、 (Gdo、5Tbo、t)o、zz(Feo、7Coo
、s)o、7a−xTaxなる組成を有する光磁気記録
膜3を1000人の膜厚に形成した。ターゲットとして
152℃中のFe−C0合金円板上に51111角のG
dTb合金チップ及びTaチップを均一になるよう配置
したもざいく状のターゲットを用いた。この他の光磁気
記録膜の作成条件は実施例1と同様である。
[Example 2] The cross-sectional structure of the produced magneto-optical disk was the same as that of Example 1, as shown in FIG. The magneto-optical dig was created using an in-line magnetron sputtering device. An Al2N film 2 with a thickness of 1000 was created by sputtering on a cleaned glass or heat-resistant resin substrate 1.The conditions for creation were as follows: A sintered body of 1,000 N was targeted, and the discharge gas was
Using 0%N260%Ar standard mixed gas, discharge gas pressure 5
■ Torr, input RF power I W/cal, sputtering time was 10 minutes. Next, (Gdo, 5Tbo, t)o, zz(Feo, 7Coo
, s)o, 7a-xTax was formed to a thickness of 1000 mm. A 51111 square G was placed on a Fe-C0 alloy disk at 152°C as a target.
A mosaic-shaped target in which dTb alloy chips and Ta chips were uniformly arranged was used. Other conditions for forming the magneto-optical recording film were the same as in Example 1.

このようにして作成した光磁気ディスクのTa添加量と
磁気及び磁気光学特性(θに?HO及びTc)の関係を
第4図に示す、まずTaを含まない(Gdo、5Tbo
、a)o、zz(Feo、gCoo、z)o、7gのθ
には0.75”、Haは7 、8 Woeで’reは1
90℃であった。これにTaを添加するとθには、曲線
10に示すように徐々に減少してゆき、 8atm%以
上の添加でθには急激に減少する。Haは、曲線11に
示すようにTaの添加量の増加とともにその値は減少し
てゆき、IQatm%の添加で2.5KOaとなった。
Figure 4 shows the relationship between the amount of Ta added and the magnetic and magneto-optical properties (θ, HO and Tc) of the magneto-optical disk prepared in this way.
, a) o, zz (Feo, gCoo, z) o, 7g θ
is 0.75”, Ha is 7, 8 Woe and 're is 1
The temperature was 90°C. When Ta is added to this, θ gradually decreases as shown in curve 10, and when 8 atm % or more is added, θ rapidly decreases. As shown in curve 11, the value of Ha decreased as the amount of Ta added increased, and reached 2.5 KOa when IQ atm% was added.

また、Tcは、曲線12の示すようにTa添加量を増加
させてゆくと、ゆるやかに減少してゆき、10atm%
の添加で100℃に低下した。しかし、これら光磁気特
性の変動は、G d −T b −F e −G o 
−T a系を実用材料として用いる際に要求される特性
(Ha−≧−2KOθ、Tc=200℃、θに2≧−0
,3’ )以上にするには、Go量を増加させてθに、
Tcを上げ、希土類元素と鉄族元素の比を変えてHaを
増加させる。これにより、Ta添加により低下した各特
性値を引上げることができるので実用材料を設計する上
で特性の低下は問題にならない。
Furthermore, as shown by curve 12, as the amount of Ta added increases, Tc gradually decreases to 10 atm%.
The temperature decreased to 100°C with the addition of . However, these fluctuations in magneto-optical properties are caused by G d −T b −F e −G o
-Characteristics required when using the Ta system as a practical material (Ha-≧-2KOθ, Tc=200℃, θ2≧-0
, 3') or more, increase the amount of Go to θ,
Ha is increased by increasing Tc and changing the ratio of rare earth elements to iron group elements. This makes it possible to increase the respective characteristic values that have decreased due to the addition of Ta, so that the decrease in characteristics does not become a problem when designing practical materials.

このようにして作成した光磁気ディスクの耐食性試験を
実施例1と同様の手法で行なった、結果を第5図に示す
。まず、80℃−95%RH中に500時間保存したと
きの飽和磁化の変化率のTa濃度依存性は曲線13に示
すように、Taを含まない場合が47%増加する。そし
てこれにTaを添加してゆくと、添加量の増加に伴ない
飽和磁化の変化率は、急激に小さくなる。また、2 、
5 at+m%以上Taを添加すると、飽和磁化の変化
率は徐々は減少する。そしてTaを10atm%添加す
るとその変化率は2%と無添加の場合よりその変化は著
しく小さいことがわかる。また、孔食試験の結果は、曲
線14に示すようにTa添加量の増加とともに膜の光透
過率の変化量も増加してゆく、そして、2 atm%で
ピークに達し、さらにTaを添加してゆくと急激に光透
過率の変化量も小さくなり、5atm%以上の添加でほ
ぼ一定となった。Taを10atm%添加した時の膜の
光透過率の変化量は、0.1% とTaを含まない場合
より著しく小さく、透過率の変化量を減少でき。
The corrosion resistance test of the magneto-optical disk thus prepared was conducted in the same manner as in Example 1, and the results are shown in FIG. First, the Ta concentration dependence of the rate of change in saturation magnetization when stored at 80° C. and 95% RH for 500 hours increases by 47% in the case without Ta, as shown in curve 13. When Ta is added to this, the rate of change in saturation magnetization decreases rapidly as the amount of addition increases. Also, 2,
When 5 at+m% or more of Ta is added, the rate of change in saturation magnetization gradually decreases. It can be seen that when 10 atm % of Ta is added, the rate of change is 2%, which is significantly smaller than when no Ta is added. In addition, as shown in curve 14, the pitting corrosion test results show that as the amount of Ta added increases, the change in light transmittance of the film also increases, reaching a peak at 2 atm%. As the amount of addition increases, the amount of change in light transmittance decreases rapidly, and becomes almost constant when the amount of addition is 5 atm % or more. The amount of change in the light transmittance of the film when 10 atm % of Ta is added is 0.1%, which is significantly smaller than that when Ta is not included, and the amount of change in transmittance can be reduced.

孔食の発生を大きく抑制することができる。さらに、高
温酸化試験を行ない結果を曲線15に示す。
The occurrence of pitting corrosion can be greatly suppressed. Furthermore, a high temperature oxidation test was conducted and the results are shown in curve 15.

200℃の大気中に試料を100時間保存すると、Ta
を含まないG d T b F e Co系薄膜の飽和
磁化二Mgの変化率は200%と大きく、これにT a
を添加してゆくと添加量が2 、5 atm%までは徐
々にMsの変化率は小さくなってゆき、2 、5 at
m%と3 atm%の間で急激に低下し、それ以降Ms
の変化率は、約10%とほぼ一定となった。
When a sample is stored in the atmosphere at 200°C for 100 hours, Ta
The rate of change of the saturation magnetization of the G d T b Fe Co thin film that does not contain Mg is as large as 200%, and this is in addition to the
As the amount of addition increases to 2,5 atm%, the rate of change in Ms gradually decreases;
It decreases sharply between m% and 3 atm%, and thereafter Ms
The rate of change was approximately constant at approximately 10%.

以上の結果を総合するとTaを3〜8 atm%添加す
ると、磁気及び磁気光学特性を大きく低下させることな
く耐食性を向上させることができ、ディスク寿命を大き
く伸すことができた。
To summarize the above results, when Ta is added in an amount of 3 to 8 atm %, the corrosion resistance can be improved without significantly deteriorating the magnetic and magneto-optical properties, and the life of the disk can be greatly extended.

これらの光磁気ディスク(Taを4 atm%以上含む
ディスク)のC/N (キャリア対雑音比)は57 d
 Bテ80”C−95%RH中で5o○時間保存しても
ほとんど経時変化を示さなかった。これより、Taはデ
ィスクの長寿命化に有用であることがわかる。
The C/N (carrier-to-noise ratio) of these magneto-optical disks (disks containing 4 atm% or more of Ta) is 57 d.
Even when stored for 500 hours in BTe80''C-95%RH, there was almost no change over time.This shows that Ta is useful for extending the life of the disk.

[実施例3] 作成した光磁気ディスクの断面構造は、実施例1と同様
で第2図に示すとおりである。光磁気ディスクの作成は
、インライン型マグネトロンスパッタ装置を用いて行な
った。洗浄したガラスまたは耐熱性樹脂基板1上に、ス
パッタ法で膜厚、1000人の5isN4薄膜2を作成
した6作成条件は、5iaNa焼結体をターゲットとし
、放電ガスに40%Nx−60%Ar[準混合ガスを用
い。
[Example 3] The cross-sectional structure of the produced magneto-optical disk was the same as that of Example 1, as shown in FIG. The magneto-optical disk was produced using an in-line magnetron sputtering device. On a cleaned glass or heat-resistant resin substrate 1, a 5isN4 thin film 2 with a film thickness of 1000 was created by sputtering 6. The creation conditions were as follows: a 5iaNa sintered body was targeted, and the discharge gas was 40%Nx-60%Ar. [Using semi-mixed gas.

放電ガス圧5mTorr、投入RF電力I W/a1、
スパッタ時間は10分である。つづいて、(Gdo 、
 aDyo 、 z) o 、 xz (Feo 、 
7COO、11) 0 、7 a−xTaxなる組成を
有する光磁気記録膜3を1000人の膜厚に形成した。
Discharge gas pressure 5 mTorr, input RF power I W/a1,
Sputtering time is 10 minutes. Continuing, (Gdo,
aDyo, z) o, xz (Feo,
A magneto-optical recording film 3 having a composition of 7COO, 11) 0, 7a-xTax was formed to a thickness of 1000 mm.

ターゲットとして152mφのF6−Go合金円板上に
5nw++角、厚さlll1lのGdDy合金チップ及
びTaチップを均一になるよう配置したもざいく状のタ
ーゲットを用いた。この他の記録膜の作成条件は、実施
例1と同様である。
As a target, a mosaic-shaped target was used, in which GdDy alloy chips and Ta chips of 5nw++ square and lllll thickness were uniformly arranged on a 152 mφ F6-Go alloy disk. Other conditions for forming the recording film are the same as in Example 1.

このようにして作成した光磁気ディスクのTa添加量と
磁気・磁気光学特性(θKF Ha及びTc)の関係を
第6図に示す。まずTaを含まない(Gdo 、 ac
yo 、 z) o 、 22 (F2O、7COO、
s )のθには0.78″′、Hcは7.8 KOeで
Tcは185℃であった。この系にTaを添加するとθ
には、曲線16に示すように徐々に減少してゆき、8 
atm%以上の添加でθには急激に減少する。Hcは、
曲線17に示すようにTaの添加量の増加とともにその
値は減少してゆき、10atm%の添加で2 、5 K
Oeとなった。
FIG. 6 shows the relationship between the amount of Ta added and the magnetic/magneto-optical properties (θKF Ha and Tc) of the magneto-optical disk produced in this manner. First, it does not contain Ta (Gdo, ac
yo, z) o, 22 (F2O, 7COO,
s) was 0.78″', Hc was 7.8 KOe, and Tc was 185°C. When Ta was added to this system, θ
gradually decreases as shown in curve 16, and 8
Addition of more than atm % causes a sharp decrease in θ. Hc is
As shown in curve 17, the value decreases as the amount of Ta added increases, and with addition of 10 atm%, 2.5K
It became Oe.

また、Tcは1曲線18に示すようにTa添加量を増加
させてゆくと、ゆるやかに減少してゆき、10atm%
の添加で100℃に低下した。しかし。
In addition, as shown in curve 18, Tc gradually decreases as the Ta addition amount increases, and increases to 10 atm%.
The temperature decreased to 100°C with the addition of . but.

これら光磁気特性の変動は、G d −D y −F 
a −G o −T a系を実用材料として用いる際に
要求される特性(Ha>2.0KOa、Tc=200’
C,σK〉0.3°)を満足するには、CoMを増加さ
せてθに、Tcを要求の値に戻すことが可能であること
が実施例1より明らかであり、実用上問題はない。
These fluctuations in magneto-optical properties are G d −D y −F
Characteristics required when using the a-G o -Ta system as a practical material (Ha>2.0KOa, Tc=200'
It is clear from Example 1 that in order to satisfy C, σK>0.3°), it is possible to increase CoM to θ and return Tc to the required value, and there is no problem in practice. .

このようにして作成した光磁気ディスクの耐食性試験を
実施例1と同様の手法で行なった。結果を第7図に示す
。まず、80℃−95%RH中に500時間保存したと
きの飽和磁化の変化率のTa濃度依存性は1曲線19に
示すように、Taを含まない場合が48%の増加がみら
れる。そして、これにTaを添加してゆくと、添加量の
増加に伴ない飽和磁化の変化率は、急激に小さくなり4
 atm%以上でほぼ一定となる。そして、10atI
11%の添加で2%の増加と無添加の場合よりその変化
は著しく小さいことがわかる。また、孔食試験の結果は
、曲線20に示すようにTaを含まない場合の膜の光透
過率の変化率が1.5%であった。
A corrosion resistance test of the magneto-optical disk thus prepared was conducted in the same manner as in Example 1. The results are shown in FIG. First, as shown in curve 19, the Ta concentration dependence of the rate of change in saturation magnetization when stored at 80° C. and 95% RH for 500 hours shows a 48% increase in the case without Ta. When Ta is added to this, the rate of change in saturation magnetization decreases rapidly as the amount added increases.
It becomes almost constant above atm%. And 10atI
It can be seen that the addition of 11% resulted in an increase of 2%, which is a significantly smaller change than in the case of no addition. Further, as shown in curve 20, the results of the pitting corrosion test showed that the rate of change in light transmittance of the film without Ta was 1.5%.

これにTaを添加してゆくと、光透過率は増加してゆき
、2 at+i%の添加で極大に達する。そしてざらに
Taを添加してゆくと急激に光透過率の変化量も小さく
なり、4 atm%以上の添加でほぼ一定となった。そ
してTaを10atm%添加した時の膜の光透過率の変
化量は、0.15%とTaを含まない場合より著しく透
過率の変化量を減少でき、孔食の発生を大きく抑制でき
る。さらに、高温酸化試験を行ないその結果を示したの
が曲線21である。200℃の大気中に試料を100時
間保存すると、Taを含まないGdDyFeCo系@膜
の飽和磁化二Msの変化率は295%と大きく、これに
Taを添加すると3 atm%まで除徐にその変化率は
減少してゆき、3〜4 atm%付近で急激に変化率は
小さくなり7 atm%以上で約10%とほぼ一定とな
った。
As Ta is added to this, the light transmittance increases and reaches a maximum when 2 at+i% is added. As Ta was gradually added, the amount of change in light transmittance decreased rapidly, and became almost constant when Ta was added at a concentration of 4 atm% or more. The amount of change in light transmittance of the film when 10 atm % of Ta is added is 0.15%, which is significantly smaller than that in the case where Ta is not included, and the occurrence of pitting corrosion can be greatly suppressed. Furthermore, a high-temperature oxidation test was conducted, and curve 21 shows the results. When a sample is stored in the atmosphere at 200°C for 100 hours, the rate of change in saturation magnetization 2Ms of a GdDyFeCo-based film that does not contain Ta is as large as 295%, and when Ta is added to this, the change gradually decreases to 3 atm%. The rate decreases, and the rate of change suddenly decreases around 3 to 4 atm%, and becomes almost constant at about 10% above 7 atm%.

以上の結果を総合すると、Taを3〜8 ata+%添
加すると、磁気及び磁気光学特性を大きく低下すること
なく耐食性を向上させることができ、ディスク寿命を大
きく伸することができた。
Summarizing the above results, when Ta was added in an amount of 3 to 8 ata+%, the corrosion resistance could be improved without significantly deteriorating the magnetic and magneto-optical properties, and the disk life could be greatly extended.

これらの光磁気ディスク(Taを4 atm%以上含む
ディスク)のC/N (キャリア対ノイズ比)は80℃
−95%RH中で500時間保存しても53dBでほと
んど経時変化を示さなかった。このことがらTa添加は
著しく低食性向上に有用であることがわかる。
The C/N (carrier-to-noise ratio) of these magneto-optical disks (disks containing 4 atm% or more of Ta) is 80°C.
Even when stored for 500 hours in −95% RH, it showed almost no change over time at 53 dB. This shows that the addition of Ta is extremely useful for improving low eating properties.

[実施例4] 作成した光磁気ディスクの断面構造は、実施例1と同様
で、その模式図を第2図に示す。洗浄したガラスまたは
耐熱性樹脂製基板1上に、スパッタ法により約1000
人のSiO膜2を作成した。
[Example 4] The cross-sectional structure of the produced magneto-optical disk was the same as that of Example 1, and a schematic diagram thereof is shown in FIG. Approximately 1,000 ml of
A human SiO film 2 was created.

その時の条件は、実施例1と同様である。ひきつづき、
光磁気記録膜としてTbz+5Co7oTaa*Gdz
gTb7Co7oTasをスパッタ法で、実施例1と同
様の条件により形成した。また、 Ndzs FseoCozo Ta7を電子ビーム蒸着
法(EB法)により作成した。その時の条件は、4X1
0コ(Torr)まで排気した後、シャッタを閉じたま
ま約10分のプリ蒸着を行なった後、光学効果膜付きの
ディスク基板上に記8膜を蒸着したにのようにして作成
した光磁気ディスクの磁気N d F e Coいずれ
も鉄族元素に比べて希土類元素の方が腐食速度が早い。
The conditions at that time are the same as in Example 1. Continuing,
Tbz+5Co7oTaa*Gdz as magneto-optical recording film
gTb7Co7oTas was formed by sputtering under the same conditions as in Example 1. Further, Ndzs FseoCozo Ta7 was created by electron beam evaporation (EB method). The conditions at that time were 4X1
After evacuation to 0 Torr, pre-evaporation was performed for about 10 minutes with the shutter closed, and then the above 8 films were deposited on a disk substrate with an optical effect film. The corrosion rate of rare earth elements is faster than that of iron group elements for magnetic disks such as N d Fe Co.

そのため、飽和磁化で評価すると湿食及び軸素ともに飽
和磁化の大きな減少がみられた。しかし、これら合金に
Taを添加することにより、湿食及び軸素による飽和磁
化の経時変化を著しく小さくすることができた。また。
Therefore, when evaluated by saturation magnetization, a large decrease in saturation magnetization was observed for both wet corrosion and axons. However, by adding Ta to these alloys, it was possible to significantly reduce the change over time in saturation magnetization due to wet corrosion and axons. Also.

孔食は、IN  NaCQaq中に一定時間(100分
)浸漬した前後の光透過率の変化により評価すると、T
aを含まない記録膜では5〜6%と著しく大きく増加し
た。これを光学顕微鏡にてa察すると、10〜100μ
mの範囲の径の異なる孔が多数みられ、希土類−鉄族元
素のみでは光磁気ディスク用の記録膜として用いること
はできない。
Pitting corrosion is evaluated by the change in light transmittance before and after immersion in IN NaCQaq for a certain period of time (100 minutes).
In the case of a recording film not containing a, the increase was significantly large, reaching 5 to 6%. When this is observed with an optical microscope, it is found that it is 10 to 100 μm.
A large number of holes with different diameters in the range of m are observed, and rare earth-iron group elements alone cannot be used as a recording film for magneto-optical disks.

そこで、この記録膜にTaを添加すると、孔食の発生を
著しく抑制することができる。顕微鏡観察の結果、観測
される孔の数も少なく、径も数μmと密度及びサイズと
もに大きく減少させることができた。また、Taを含む
記録膜を用いたディスクのC/N (キャリア対ノイズ
比)は作成直後48dBであったものが、80℃−95
%RH中に500時間保算しても47dBと大きな変化
をみせず本発明は、ディスク寿命を大きく伸すことがで
きることがわかる。Taを含まない記録膜を用いると記
録膜は透明化し、C/N測定ができなかった。このよう
に、Taは、いずれの希土類−鉄族の合金においても等
しく、ディスクの耐食性向上に有用であることがわかる
Therefore, if Ta is added to this recording film, the occurrence of pitting corrosion can be significantly suppressed. As a result of microscopic observation, the number of pores observed was small, and the diameter was several μm, which resulted in a significant reduction in both density and size. In addition, the C/N (carrier-to-noise ratio) of a disk using a recording film containing Ta was 48 dB immediately after creation, but at 80°C-95
Even after 500 hours of storage at %RH, there was no significant change of 47 dB, indicating that the present invention can significantly extend the disk life. When a recording film not containing Ta was used, the recording film became transparent and C/N measurement was not possible. Thus, it can be seen that Ta is equally useful for improving the corrosion resistance of disks in all rare earth-iron alloys.

[実施例5] 作成した光磁気ディスクの断面構造の模式図は第8図に
示すとおりである。洗浄したガラスまたは樹脂基板22
上に、二元同時スパッタ法によりTbzsFesx−x
co1oTa*膜23を作成した。その際、Ta濃度が
基板面から記録膜表面に向うに従い、高くなるように作
成した。ターゲットにTa板(152mφX 1 m 
t )及びT bzs F eeo Coxx(面積比
)なる組成の焼結体ターゲット(152mφX 1 、
5 na t )を用いた。スパッタに先たち、チャン
バ内を4 X 10””(Torr)以上の高真空に排
気した。スパッタ条件は、Arを放電ガスに用い、ブリ
スパッタ後のRF比出力Taターゲットについては、初
期0.3W/1fflでスタートし、2分後にI W/
cdとし、これで4分間保持し、スパッタを終了した。
[Example 5] A schematic diagram of the cross-sectional structure of the produced magneto-optical disk is shown in FIG. Cleaned glass or resin substrate 22
On top, TbzsFesx-x was deposited by two-dimensional simultaneous sputtering method.
A co1oTa* film 23 was created. At that time, the Ta concentration was made to increase from the substrate surface toward the recording film surface. Ta plate (152mφX 1m
A sintered target (152 mφX 1,
5 na t ) was used. Prior to sputtering, the inside of the chamber was evacuated to a high vacuum of 4×10'' (Torr) or more. The sputtering conditions were as follows: Ar was used as the discharge gas, and for the RF specific output Ta target after bliss sputtering, the initial output was 0.3 W/1 ffl, and after 2 minutes, I W/1 ffl was used.
cd and held for 4 minutes to complete sputtering.

一方、焼結体ターゲットは、IW/dでスタートし、2
分後よりRF比出力徐々に低下してゆき、4分後ではO
W/cdとなるように出力をコントロールした。こうし
て、組成を変調した1200人の磁性膜を形成した。
On the other hand, the sintered target starts at IW/d and 2
After 4 minutes, the RF specific output gradually decreases, and after 4 minutes, it is O
The output was controlled to be W/cd. In this way, 1200 magnetic films with modulated compositions were formed.

このディスクの特性は、Kerr回転角:θに=0.3
5″、 Ha =6KOa 、C/N=50 d Bで
あった1次にディスクの寿命試験を、実施例1と同様の
手法にて行なった。その結果、孔食、湿食。
The characteristics of this disk are: Kerr rotation angle: θ = 0.3
5", Ha = 6 KOa, and C/N = 50 dB. A life test of the primary disk was conducted in the same manner as in Example 1. As a result, pitting corrosion and wet corrosion were detected.

及び軸素ともなう、光透過率及び飽和磁化及びC/Nの
変化もまったく起らず、このようにTaの添加は腐食抑
制に対しと著しく有用であることがわかる。
Changes in optical transmittance, saturation magnetization, and C/N, which occur in the case of axons and axons, did not occur at all, indicating that the addition of Ta is extremely effective in inhibiting corrosion.

[実施例6] 作成した光磁気ディスクの断面構造は、実施例5と同様
で第8図に示すとおりである。洗浄したガラスまたは耐
熱性樹脂基板22上に、マグネトロンスパッタ法により
、T baa F esx−x C010T a−x膜
23を作成した。その際ターゲットは、次のような形状
を有する。つまり152aaφのFe板上に外径152
■φ、内径132mmφ、厚さ1mのリング状のTa板
をおき、30nn+φ、厚さ101の円板状のTa板を
中心付近にそれぞれ配置し、この中間にTa、TbとC
Oを均一になるように置いた複合ターゲットである。ス
パッタに先立ち、チャンバ内を4 X 10”−’(T
orr)以上の高真空に排気した。スパッタ条件は、放
電ガスにArを用い。
[Example 6] The cross-sectional structure of the produced magneto-optical disk was the same as that of Example 5, as shown in FIG. A T baa Fe esx-x C010T a-x film 23 was formed on the cleaned glass or heat-resistant resin substrate 22 by magnetron sputtering. The target then has the following shape: In other words, on a Fe plate of 152 aaφ, an outer diameter of 152
■Place a ring-shaped Ta plate with φ, inner diameter 132 mmφ, and 1 m thickness, and place a disc-shaped Ta plate with 30 nn + φ and 101 mm in thickness near the center, and place Ta, Tb, and C in between.
It is a composite target in which O is placed uniformly. Prior to sputtering, the interior of the chamber was 4 x 10"-' (T
It was evacuated to a high vacuum above (orr). The sputtering conditions used Ar as a discharge gas.

投入RF出力1.W/d、放電ガス圧5(nmTorr
)にて30分間ブリスパッタ後、メインスパッタを4分
間行った。このようにして、1200人の光磁気記録膜
を形成した。
Input RF output 1. W/d, discharge gas pressure 5 (nmTorr
) After bliss sputtering for 30 minutes, main sputtering was performed for 4 minutes. In this way, 1200 magneto-optical recording films were formed.

このディスクの特性は、Kerr回転角二〇に=0.3
5@、 Ha =6KOa 、C/N=50 d Bで
あった。次にディスクの寿命試験を行なったところ、デ
ィスクのトラック部分の耐食性については実施例1と同
様であるが、ディスクの内周部分と外周部分から情報記
録部分への腐食が時として問題となることがあったが、
外周部分及び内周部分におけるTa濃度を著しく高くす
ることでこの部分から腐食を防ぐことができることがわ
かる。
The characteristics of this disk are: Kerr rotation angle 20 = 0.3
5@, Ha = 6 KOa, and C/N = 50 dB. Next, we conducted a disk life test and found that the corrosion resistance of the track portion of the disk was the same as in Example 1, but corrosion from the inner and outer circumferential portions of the disk to the information recording portion sometimes became a problem. There was, but
It can be seen that by significantly increasing the Ta concentration in the outer and inner peripheral parts, corrosion can be prevented from these parts.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、希土類−鉄族よりなる合金薄膜にTa
を3〜8原子パーセント添加することにより表面に不働
態被膜が形成され、記録膜の酸化を著しく抑えることが
できるので、光磁気ディス仲すことができた。さらに、
Taを記録膜表面に濃縮することにより、この効果を増
大することができる。また、ディスク面に垂直な方向に
Ta濃度の勾配をもたせることで耐食性向上効果を大き
く増大でき、これは、不働態の形成をさらに促進した結
果である。一方、ディスク面と平行方向にもTa濃度の
勾配をつけることにより、外周部或いは内周部用からの
腐食を著しく抑制できる。この場合の効果もTaが先と
同じ効果を有するからである。
According to the present invention, Ta is added to the rare earth-iron alloy thin film.
By adding 3 to 8 at. moreover,
This effect can be increased by concentrating Ta on the surface of the recording film. Further, by creating a Ta concentration gradient in the direction perpendicular to the disk surface, the effect of improving corrosion resistance can be greatly increased, and this is a result of further promoting the formation of a passive state. On the other hand, by creating a Ta concentration gradient in the direction parallel to the disk surface, corrosion from the outer circumferential portion or the inner circumferential portion can be significantly suppressed. This is because Ta has the same effect in this case as before.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は実施例1における耐食性試験結果を示す図、第
2図は実施例1〜4のディスクの断面構造の模式図であ
る。第3図〜第7図は実施例2〜6における耐食性試験
結果を示す図、第8図は実施例5及び6におけるディス
クの断面構造の模式%式% 4・・・Kerr回転角のTa濃度依存性、5・・・保
磁力のT a ′aa度依存性6・・・キュリー温度の
78m度依存性、7−80℃−95%RH−500hr
後のMsの変化のT a :a度依存性、8− I N
  NaCjl hq中に100分保存後の光透過率の
Ta濃度依存性、9・・・200℃大気中に100hr
保存後のMsの変化のTa濃度依存性、10・・・θに
のTa濃度依存性、11・・・HCのTa濃度依存性、
12・・・TcのTa濃度依存性、13−80℃−95
%RH−500h r後のMsの変化のTa濃度依存性
、14・・・IN−NaCQい中に100分保存後の光
透過率のTa濃度依存性、15・・・200’C大気中
に100hr保存後のMsのTa濃度依存性。 16・・・OにのTa濃度依存性、17・・・HcのT
a濃度依存性、18・・・TcのT a a度依存性、
19−80℃−95%RH500hr後のMsの変化の
Ta濃度依存性、20− I N  N a CQ a
q中に100分浸せき後の光透過率のT a a度依存
性、21−200℃大気中に100hr保存後のMsの
変化のTa濃度依存性、22・・・基板、23・・・光
磁気記録膜。 yIc1図 第2図 13図 1粂力Y:J((ム外) 6、、、Q、?諸論1を 第午図 1邊加量い一1幻 第 5図 TcL井力O量 (ム”/−) lao’cスj(イ(−、+0okp@7冒支つ”””
 Ms QLAぴ551jLK’fFt”第6図
FIG. 1 is a diagram showing the corrosion resistance test results in Example 1, and FIG. 2 is a schematic diagram of the cross-sectional structure of the disks of Examples 1 to 4. Figures 3 to 7 are diagrams showing the corrosion resistance test results in Examples 2 to 6, and Figure 8 is a schematic diagram of the cross-sectional structure of the disk in Examples 5 and 6. Dependency, 5...T a 'aa degree dependence of coercive force 6...78 m degree dependence of Curie temperature, 7-80°C-95%RH-500hr
T a of subsequent change in Ms: a degree dependence, 8-IN
Ta concentration dependence of light transmittance after storage in NaCjl hq for 100 minutes, 9...100 hours in 200℃ air
Ta concentration dependence of change in Ms after storage, 10... Ta concentration dependence on θ, 11... Ta concentration dependence of HC,
12... Ta concentration dependence of Tc, 13-80°C-95
%RH - Ta concentration dependence of change in Ms after 500 hours, 14...Ta concentration dependence of light transmittance after storage for 100 minutes in IN-NaCQ, 15...in 200'C atmosphere Ta concentration dependence of Ms after storage for 100 hours. 16...Ta concentration dependence on O, 17...T of Hc
a concentration dependence, 18... Tc T a degree dependence,
19- Ta concentration dependence of change in Ms after 500 hr at 80°C and 95% RH, 20- I N N a CQ a
T a degree dependence of light transmittance after 100 minutes immersion in Q, Ta concentration dependence of change in Ms after storage in air at 21-200°C for 100 hours, 22...Substrate, 23...Light magnetic recording film. yIc1 Figure 2 Figure 13 Figure 1 Kume force Y: J ((Mu outside) 6,,,Q,? ”/-) lao'csuj(Lee(-, +0okp@7 blasphemy)”””
Ms QLApi551jLK'fFt"Figure 6

Claims (1)

【特許請求の範囲】 1、基板に対して垂直方向に磁化容易軸を有する希土類
−鉄族系元素を主体とする光磁気ディスクの記録媒体に
おいて、これにTaを3原子パーセント以上、8原子パ
ーセント以下添加したことを特徴とする光磁気記録媒体
。 2、光磁気記録媒体におけるTa(7)添加において、
Ta濃度に膜厚方向に組成勾配をもたせたことを特徴と
する特許請求の範囲第1項の光磁気記録媒体。 3、光磁気記録媒体におけるTaの添加において、Ta
濃度に基板面と水平方向に組成の勾配をもたせたことを
特徴とする特許請求の範囲第1項の光磁気記録媒体。
[Scope of Claims] 1. A magneto-optical disk recording medium mainly composed of rare earth-iron group elements having an axis of easy magnetization perpendicular to the substrate, containing at least 3 atomic percent and 8 atomic percent Ta. A magneto-optical recording medium characterized by containing the following additives: 2. In Ta(7) addition in magneto-optical recording media,
2. The magneto-optical recording medium according to claim 1, wherein the Ta concentration has a composition gradient in the film thickness direction. 3. In adding Ta to magneto-optical recording media, Ta
2. The magneto-optical recording medium according to claim 1, wherein the concentration has a composition gradient in a direction horizontal to the substrate surface.
JP61267515A 1986-11-12 1986-11-12 Magneto-optical recording medium Expired - Lifetime JP2539397B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61267515A JP2539397B2 (en) 1986-11-12 1986-11-12 Magneto-optical recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61267515A JP2539397B2 (en) 1986-11-12 1986-11-12 Magneto-optical recording medium

Publications (2)

Publication Number Publication Date
JPS63122034A true JPS63122034A (en) 1988-05-26
JP2539397B2 JP2539397B2 (en) 1996-10-02

Family

ID=17445911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61267515A Expired - Lifetime JP2539397B2 (en) 1986-11-12 1986-11-12 Magneto-optical recording medium

Country Status (1)

Country Link
JP (1) JP2539397B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63253555A (en) * 1987-01-14 1988-10-20 ミネソタ マイニング アンド マニユフアクチユアリング カンパニー Stable magnetooptical recording medium
JPH0191341A (en) * 1987-09-30 1989-04-11 Sharp Corp Magneto-optical recording medium
JPH03269847A (en) * 1990-03-12 1991-12-02 Internatl Business Mach Corp <Ibm> High-anticorrosive optical magnetic recording media

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5984358A (en) * 1982-11-04 1984-05-16 Seiko Instr & Electronics Ltd Photomagnetic recording medium
JPS6153703A (en) * 1984-08-23 1986-03-17 Seiko Instr & Electronics Ltd Photomagnetic recording medium
JPS6184803A (en) * 1984-10-03 1986-04-30 Oki Electric Ind Co Ltd Photo-magnetic recording medium
JPS6187307A (en) * 1984-10-03 1986-05-02 Oki Electric Ind Co Ltd Photomagnetic recording material
JPS62232736A (en) * 1986-04-02 1987-10-13 Oki Electric Ind Co Ltd Photomagnetic recording medium
JPS62252550A (en) * 1986-04-25 1987-11-04 Seiko Instr & Electronics Ltd Magneto-optical recording medium

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5984358A (en) * 1982-11-04 1984-05-16 Seiko Instr & Electronics Ltd Photomagnetic recording medium
JPS6153703A (en) * 1984-08-23 1986-03-17 Seiko Instr & Electronics Ltd Photomagnetic recording medium
JPS6184803A (en) * 1984-10-03 1986-04-30 Oki Electric Ind Co Ltd Photo-magnetic recording medium
JPS6187307A (en) * 1984-10-03 1986-05-02 Oki Electric Ind Co Ltd Photomagnetic recording material
JPS62232736A (en) * 1986-04-02 1987-10-13 Oki Electric Ind Co Ltd Photomagnetic recording medium
JPS62252550A (en) * 1986-04-25 1987-11-04 Seiko Instr & Electronics Ltd Magneto-optical recording medium

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63253555A (en) * 1987-01-14 1988-10-20 ミネソタ マイニング アンド マニユフアクチユアリング カンパニー Stable magnetooptical recording medium
JPH0191341A (en) * 1987-09-30 1989-04-11 Sharp Corp Magneto-optical recording medium
JPH03269847A (en) * 1990-03-12 1991-12-02 Internatl Business Mach Corp <Ibm> High-anticorrosive optical magnetic recording media

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