JPS63121114A - Magnetic recording disk and its manufacture - Google Patents
Magnetic recording disk and its manufactureInfo
- Publication number
- JPS63121114A JPS63121114A JP26552486A JP26552486A JPS63121114A JP S63121114 A JPS63121114 A JP S63121114A JP 26552486 A JP26552486 A JP 26552486A JP 26552486 A JP26552486 A JP 26552486A JP S63121114 A JPS63121114 A JP S63121114A
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetic
- circumferential direction
- substrate
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 229910000531 Co alloy Inorganic materials 0.000 claims abstract description 20
- 238000004544 sputter deposition Methods 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 239000011651 chromium Substances 0.000 claims description 17
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 16
- 229910052804 chromium Inorganic materials 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 5
- 239000010408 film Substances 0.000 description 30
- 230000000052 comparative effect Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 239000000696 magnetic material Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000006249 magnetic particle Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910002441 CoNi Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- SZMZREIADCOWQA-UHFFFAOYSA-N chromium cobalt nickel Chemical compound [Cr].[Co].[Ni] SZMZREIADCOWQA-UHFFFAOYSA-N 0.000 description 1
- ZGDWHDKHJKZZIQ-UHFFFAOYSA-N cobalt nickel Chemical compound [Co].[Ni].[Ni].[Ni] ZGDWHDKHJKZZIQ-UHFFFAOYSA-N 0.000 description 1
- YPHMISFOHDHNIV-FSZOTQKASA-N cycloheximide Chemical compound C1[C@@H](C)C[C@H](C)C(=O)[C@@H]1[C@H](O)CC1CC(=O)NC(=O)C1 YPHMISFOHDHNIV-FSZOTQKASA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
（鉱業上の利用分野）
本発明は磁気記録円盤、とくにスパッタリングによりコ
バルト合金磁性膜を被着させた磁気記録円盤およびその
製造法に圓するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Mining Application) The present invention relates to a magnetic recording disk, particularly a magnetic recording disk having a cobalt alloy magnetic film deposited by sputtering, and a method for manufacturing the same.
（従来の技術）
記録密度の高い合金磁性薄膜を有する磁気記録媒体の研
究−発が近年大いに推進されているが、その中で非磁性
基体上に蒸着法やスパッタリングによりり６４Ｍ１ｋを
被着させた後、その表面にコバルト合金膜を被着させて
なる磁気記録媒体がある。(Prior art) Research into magnetic recording media having alloy magnetic thin films with high recording density has been greatly promoted in recent years, and in this research, 64M1k was deposited on a non-magnetic substrate by vapor deposition or sputtering. There is also a magnetic recording medium in which a cobalt alloy film is deposited on the surface of the magnetic recording medium.
（文献例−−−Ｊｅａｎ Ｐ、 Ｌａｚｚａｒｉ 、
１． Ｍｅｌｎｉｃｋ 。(Literature examples---Jean P, Lazzari,
1. Melnick.
ａｎｄ Ｄｅｎｎｉｓ Ｒａｎｄｅｔ ＠’ｒｈｉｎ
！ｅｖａｐｏｒａｔｅｄ Ｆｌｌｍｓｗｉｔｈ Ｈｌｇ
ｈ Ｃｏｅｒｃｉｖｅ Ｆｏｒｃｅ ” ＩｆＣＥＢ
、 Ｔｒａｎａａｃ−ｔｉｏｎｓ ｏｎ Ｍａｇｎｅｔ
ｉｃｓ 、 ｖｏｌ、 Ｍａｇ −３＊ ／１６５ 。and Dennis Randet @'rhin
! evaporatedFllmswith Hlg
h Coercive Force” IfCEB
, Tranac-tions on Magnet
ics, vol, Mag-3*/165.
１９６７、ＰＰ２０５）＃磁気記録媒体は面内方向で高
い保磁力を示すので、面内記録型として利用される。1967, PP205) #Since magnetic recording media exhibit high coercive force in the in-plane direction, they are used as in-plane recording types.
（発明が解決しようとする間組点）
上記のように、非磁性基体上に被着させたクロム膜を介
し、コバルト合金磁性膜を被Ｎさせた磁気記録媒体は、
そのクロム膜の厚さを増すにつれて保磁力が増大するか
、その磁気軽易軸の方向は等方向すなわちランダムにな
ってしまう。一般に膜の磁性粒子の向きにより出力、ノ
イズ等は異なリ、磁性粒子の磁気容易軸の方向をそろえ
ることにより、その方向の再生出力、ノイズ特性は向上
することが良く知られている。本発明は、クロム膜上の
コバルト合金磁性膜の円周方向の角形比および円周方向
の抗磁力角形比がとくに大きい磁気記録円盤ｒ提供する
ことを目的とするものである。(Interset point to be solved by the invention) As described above, a magnetic recording medium in which a cobalt alloy magnetic film is coated with N via a chromium film deposited on a non-magnetic substrate has the following characteristics:
As the thickness of the chromium film increases, either the coercive force increases or the direction of the magnetic easy axis becomes isotropic, that is, random. It is well known that the output, noise, etc. generally vary depending on the orientation of the magnetic particles in the film, and that by aligning the directions of the magnetic easy axes of the magnetic particles, the reproduction output and noise characteristics in that direction can be improved. An object of the present invention is to provide a magnetic recording disk r in which a cobalt alloy magnetic film on a chromium film has a particularly large circumferential squareness ratio and a circumferential coercive force squareness ratio.
（問題点を解決するための手段〉
発明者らは上記目的を達成するために撫々検討を行った
結果、基体の表面に円周方向に緻密な溝を形成するとと
もに、基体の表面にスパッタリングによりクロム膜を被
着させる際にその雰囲気および基体の温度を特定の範囲
に定めることにより円周方向の角型比および円周方向の
抗磁力角形比がいちじるしく大きくなること全見出し本
発明に至った。(Means for Solving the Problems) In order to achieve the above object, the inventors conducted extensive studies, and found that they formed dense grooves in the circumferential direction on the surface of the base and sputtered the surface of the base. According to the present invention, the squareness ratio in the circumferential direction and the coercive force squareness ratio in the circumferential direction can be significantly increased by setting the atmosphere and the temperature of the substrate within a specific range when depositing a chromium film. Ta.
すなわち、本発明の第１は円周方向に緻密な溝を形成し
た円盤からなる非殊性基体上に、スパッタリングにより
クロム膜、コバルト合金磁性膜および保ｉ！１膜を積層
させた磁気記録円盤でおり、本発明の熟２は円周方向に
緻密な溝を形成した円盤からなる非磁性基体を圧力Ｑ、
３ｍ Ｔｏｒｒ〜３ＱｍＴｏｒｒの不活性ガス中で、１
００〜２５０℃の温度で加熱しながら、スパッタリング
によシフロム１１１ｋ被着させ、ついでスパッタリング
によりコバルト合金磁性膜を被層させ、その上に保護膜
を被着させることを特徴とする磁気記録円盤の製造法で
める。That is, the first aspect of the present invention is to form a chromium film, a cobalt alloy magnetic film, and an i! This is a magnetic recording disk in which one film is laminated.
In an inert gas of 3 m Torr to 3 Q m Torr, 1
A magnetic recording disk characterized in that SiFROM 111k is deposited by sputtering while heating at a temperature of 00 to 250°C, then a cobalt alloy magnetic film is deposited by sputtering, and a protective film is deposited thereon. Determined by manufacturing method.
以下、本発明の詳細な説明する。本発明において非磁性
基体とはアルミニウム合金などの非磁性金属、ボリカー
ポネー）、ＡＢＢ樹脂などの耐熱性樹脂、ガラスなどの
材料を円盤に加工したものである。The present invention will be explained in detail below. In the present invention, the non-magnetic substrate is a material processed into a disc from a material such as non-magnetic metal such as aluminum alloy, polycarbonate), heat-resistant resin such as ABB resin, or glass.
非磁性基体に形成する円周方向に緻密な溝とは円盤の表
面に一心円の溝を刻んだものであり、溝の深さは０．０
２〜０．３．μ諷ていとが好ましく、溝の暢は溝の深さ
と同程度が好ましい。溝の深さが０．０２−より浅いと
円周方向の角型比が向上しない。また０應−より深いと
出力が低下し８／Ｎ比が悪化する。溝と溝の間隔はとく
に限定はないが、１寓μＩＰ越えると円周方向の角型比
の向上度合が低下する。The dense circumferential groove formed on the non-magnetic substrate is a concentric groove carved on the surface of a disk, and the depth of the groove is 0.0.
2-0.3. It is preferable to use ``μ'', and the groove length is preferably about the same as the depth of the groove. If the depth of the groove is less than 0.02, the squareness ratio in the circumferential direction will not improve. Further, if the depth is deeper than 0 -, the output decreases and the 8/N ratio deteriorates. There is no particular limitation on the distance between the grooves, but if it exceeds 1 μIP, the degree of improvement in the squareness ratio in the circumferential direction decreases.
このような＃Ｉｔ−刻むに拡円盤をその軸を中心に回転
させながら研反用のテープを押しらてれはよい。研反用
テープの品種、押しあてる圧力および時間によシ溝の深
さ、幅および溝と溝の間隔を調節することができる。In order to engrave like this, the polishing tape can be pressed while rotating the expanding disk around its axis. The depth and width of the grooves and the spacing between grooves can be adjusted depending on the type of abrasive tape, pressing pressure and time.
つぎにスパッタリングによりクロム膜を被着させる。ス
パッタリングは圧力０−３ ｍ Ｔｏｒｒ （ミリトー
ル請１０−３ ）−ル）〜３ Ｑ ｍ Ｔｏｒｒのアル
♂ン、ヘリウムなど不活性ガス中で行なわなければなら
ない。圧力がＱ、３ ｍ Ｔｏｒｒ未満では放電が不安
定になり裏腹速度が低下する。また、圧力が３ Ｑ ｍ
Ｔｏｒｒ ｋ越えると円周方向の角型比および円周方
向の抗磁力角形比のいずれも低下する。Next, a chromium film is deposited by sputtering. Sputtering must be carried out in an inert gas such as argon or helium at a pressure of 0-3 m Torr (10-3 mTorr) to 3 Q m Torr. If the pressure is less than Q, 3 m Torr, the discharge becomes unstable and the speed decreases. Also, the pressure is 3 Q m
When Torr k is exceeded, both the circumferential squareness ratio and the circumferential coercive force squareness ratio decrease.
まな、スパッタリング時の基体の温度は１００℃〜２５
０℃の範囲内でなければならない、 １００℃未満ある
いは２５０℃を越えると円周方向の角型比および円周方
向の抗磁力角形比のいずれも向上しない。The temperature of the substrate during sputtering is 100°C to 25°C.
It must be within the range of 0°C; if it is less than 100°C or exceeds 250°C, neither the circumferential squareness ratio nor the circumferential coercive force squareness ratio will improve.
クロム膜の厚さは物に限定はないが通常は３０００Ｘ程
度でよい。The thickness of the chromium film is not particularly limited, but it is usually about 3000X.
ついでスパッタリングによｐコバルト合金磁性膜を被着
させる。コバルト合金磁性膜のコバルト合金はコバルト
・ニッケル合金、コバルト・ニッケル・クロム合金など
であゐ。それらの合金の組成および磁性膜の厚さは特に
限定はなく、磁気記録媒体の希望する磁気特性に応じて
任意に定めることができる。コバルト合金磁性膜の被層
条件はとくに限定はないが、通常はクロム膜の被層時と
同じ圧力の不活性ガス中で、かつ同じ基体温度で行なえ
はよい。Then, a p-cobalt alloy magnetic film is deposited by sputtering. Cobalt alloys of cobalt alloy magnetic films include cobalt-nickel alloys, cobalt-nickel-chromium alloys, etc. The composition of these alloys and the thickness of the magnetic film are not particularly limited and can be arbitrarily determined depending on the desired magnetic properties of the magnetic recording medium. There are no particular limitations on the coating conditions for the cobalt alloy magnetic film, but it is usually best to carry out the coating in an inert gas at the same pressure and at the same substrate temperature as when coating the chromium film.
つぎ艮コバルト合金磁性膜の上に保護膜を被着させる。Next, a protective film is deposited on the cobalt alloy magnetic film.
保護膜の種類、被着方法はとくに限定はなく、シリカ、
カーボンなどの材料をスパッタリング、蒸着等の方法で
被着させれによい。There are no particular restrictions on the type of protective film or the method of application; silica,
Materials such as carbon may be deposited by sputtering, vapor deposition, or other methods.
（実施例〉 次に本発明を実施例により具体的に説明する。(Example> Next, the present invention will be specifically explained using examples.
実施例１〜１８
まず、直径９５ｎ、厚さ１．３０のアルミニウム合金（
Ｗ番５０８６）からなる円盤の表面をスビ−ドファム・
ラッピングマシンによシ鏡面研摩したのち、Ｎ１−Ｐメ
ッキを施した。つぎに、円盤を軸を中心に回転速度２０
回転／分で回転させながら研反用のテープ（日本ミクロ
コーティング株式会社展、品ｇｗ＊−３０００，）ｔ−
圧力的１ゆＡ−で３０秒間押し当てることによって円盤
の表面に緻密な溝を形成させた。円盤の表面および破断
面を電子顕微鏡で調べた結果、溝の深さは０．０５μへ
溝の幅は０．０５μ罵、溝と溝の間隔は０．５μ隅であ
った。Examples 1 to 18 First, aluminum alloy (
The surface of the disk made of W No. 5086)
After mirror polishing using a lapping machine, N1-P plating was applied. Next, rotate the disk around the axis at a speed of 20
Grinding tape (Japan Micro Coating Co., Ltd. exhibition, product gw*-3000,) t- while rotating at a rotation/min.
Dense grooves were formed on the surface of the disc by pressing it with a pressure of 1 YA- for 30 seconds. As a result of examining the surface and fracture surface of the disk using an electron microscope, the depth of the grooves was 0.05μ, the width of the grooves was 0.05μ, and the distance between the grooves was 0.5μ at the corner.
前記溝入り基体をスパッタリング装置に入れ、アルプン
ガス圧および基体温度を表１のとおシに設定し、まずク
ロムをターデッドとしてスパッタリング食性ない、基体
上に厚さ３０００又のクロム′ａｔ−被着させた。なお
、ターデッドと基体との距離は６０ｗｇ、クロムの析出
速度は一５００λ／分であつ九。The grooved substrate was placed in a sputtering device, the alponic gas pressure and the substrate temperature were set as shown in Table 1, and chromium was first deposited on the substrate to a thickness of 3000 mm by sputtering as tarded chromium. . The distance between the tarded and the substrate was 60 wg, and the chromium deposition rate was 1,500 λ/min.
つぎに、ターピット′に表１に示す種類のコバルト合金
磁性体に取替え、ガス圧力および基体温度はクロム展の
被着時と同一にして、表１に示す膜厚のコバルト合金磁
性膜を被着させた。なお、コバルト合金磁性体の組成は
Ｃｏ Ｎｉの場合扛Ｃｏが８０原子嘩、Ｎ１が２０原子
俤でめシ、Ｃｏ Ｎｉ Ｃｒの場合はＣｏが６２．５原
子−１Ｎｉが３０７Ｒ子チ、Ｃｒが７．５原子−でめっ
た。また、コバルト合金磁性体の析出速度は５００又／
分で６つ次。Next, the tarpit' was replaced with a cobalt alloy magnetic material of the type shown in Table 1, and a cobalt alloy magnetic film with the film thickness shown in Table 1 was deposited at the same gas pressure and substrate temperature as when depositing chromium. I let it happen. In addition, the composition of the cobalt alloy magnetic material is 80 atoms of Co, 20 atoms of N1 in the case of CoNi, 62.5 atoms of Co-1307R atoms of Ni, and 307R atoms of Cr in the case of CoNiCr. 7.5 atoms were met. In addition, the precipitation rate of cobalt alloy magnetic material is 500 or /
6 next in minutes.
ついで、コバルト合金磁性体の上にスパッタリング法に
より厚さ３００大のカーボン保極膜を被着させた。Next, a carbon retention film having a thickness of 300 mm was deposited on the cobalt alloy magnetic material by sputtering.
得られた磁気記録円盤から１０５ｍＸ１０ｎ＋の試験片
を作成し、円周方向の角形比および円周方向の抗磁力角
形比を測定し九。＄１Ｊ定値は表１に示すとおシである
。なお、角形比の測定は珈研電子社製の振動試料形出力
計（形式ＢＨＶ −５５） １１−用い、外部磁界１０
にエルステッドで行なった。A test piece of 105m x 10n+ was prepared from the obtained magnetic recording disk, and the circumferential squareness ratio and the circumferential coercive force squareness ratio were measured. The fixed value of $1J is shown in Table 1. The squareness ratio was measured using a vibrating sample type output meter (model BHV-55) manufactured by Kaken Denshi Co., Ltd., with an external magnetic field of 10
held in Ørsted.
比較例１〜１８
基体上に溝を形成しなかった（比較例３〜１２および比
較例１５％ １６］、クロム膜被着時のアルプンガス圧
力ｋ ３０ ｒｎ Ｔｏｒｒ ｆ越える圧力とした（比
較例１３．１４）、ま九はクロム膜被着時の基体温度ｔ
−１００℃未満（比較例１．２）もしくは２５０℃を越
える温度にした（比較例１７．１８Ｊ０その他の方法・
条件は表２に示すとお夕実施例１〜１８と同一にして磁
気記録円盤を製造し、各実施例と同じ条件で円周方向の
角形比および円周方向の抗磁力角形比を測定した。測定
値は表２に示すとおりである。Comparative Examples 1 to 18 No grooves were formed on the substrate (Comparative Examples 3 to 12 and Comparative Example 15% 16), and the pressure exceeded the alponic gas pressure k 30 rn Torr f at the time of chromium film deposition (Comparative Example 13). 14), ma9 is the substrate temperature t when the chromium film is deposited.
The temperature was lower than -100℃ (Comparative Example 1.2) or higher than 250℃ (Comparative Example 17.18J0 Other methods
The conditions are shown in Table 2. Magnetic recording disks were manufactured under the same conditions as in Examples 1 to 18, and the circumferential squareness ratio and the circumferential coercive force squareness ratio were measured under the same conditions as in each Example. The measured values are shown in Table 2.
第１図〜＃ｌ＆４＠は上記各実施例および各比較例の結
果をグラフ化したものである。FIGS. 1 to #1 & 4@ are graphs of the results of each of the above-mentioned Examples and Comparative Examples.
（発明の効果ン
表１、表２および石１図〜第４図により明らかなように
、円周方向に緻密な溝を形成した円盤からなる非磁性基
体を圧力Ｑ、５ ｍ Ｔｏｒｒ 〜３０ ｍＴｏｒｒの
不活性ガス中で１００℃〜２５０℃の温度で加熱しなが
ら、スパッタリングによシフロム膜Ｗ＊着させた磁気記
録円盤は円周方向の角形比および円周方向の抗磁力角形
比が大きい。(Effects of the invention) As is clear from Tables 1 and 2 and Figures 1 to 4, a non-magnetic substrate consisting of a disk with dense grooves formed in the circumferential direction was subjected to a pressure Q of 5 mTorr to 30 mTorr. The magnetic recording disk on which the SYFROM film W* is deposited by sputtering while heating at a temperature of 100 DEG C. to 250 DEG C. in an inert gas has a large squareness ratio in the circumferential direction and a large coercive force squareness ratio in the circumferential direction.
第１図〜第４図は各実施例および各比較例の結果ｔグラ
フ化したものである。
第１図・・・アルプンガス圧力と円周方向の角形比の関
係を示す。
８に２図・・・アルプンガス圧力と円周方向の抗磁力角
形比の関係を示す。
第６図・・・基体温度と円周方向の角形比の関係を示す
。
第４図・・・基体温度と円周方向の抗磁力角形比の関係
を示す。
なお、第１図および第２図の横軸は対数スケールである
、
特許出願人 電気化学工業株式会社
第１＠
（［Ｔｏ狩り
第２図
スハ１）７ソン７”？の７ ／Ｖ ｍｌ”ンガス圧力（
ｍＴｏｒｒ）
第３図
７．Ｒ”ｚ７ｉングｆの茎体壜７’ｉ （”Ｃ）第４図FIGS. 1 to 4 are t-graphs of the results of each example and each comparative example. Figure 1 shows the relationship between alponic gas pressure and circumferential squareness ratio. Figure 8 shows the relationship between alponic gas pressure and coercive force squareness ratio in the circumferential direction. Fig. 6 shows the relationship between substrate temperature and circumferential squareness ratio. Fig. 4 shows the relationship between substrate temperature and coercive force squareness ratio in the circumferential direction. The horizontal axes in Figures 1 and 2 are on a logarithmic scale. Patent applicant: Denki Kagaku Kogyo Co., Ltd. gas pressure (
mTorr) Figure 37. Stem body bottle 7'i of R''z7ingf (''C) Fig. 4
Claims (2)
性基体上に、スパッタリングによりクロム膜、コバルト
合金磁性膜および保護膜を積層させた磁気記録円盤。(1) A magnetic recording disk in which a chromium film, a cobalt alloy magnetic film, and a protective film are laminated by sputtering on a non-magnetic substrate consisting of a disk in which dense grooves are formed in the circumferential direction.
性基体を圧力０．３ｍＴｏｒｒ〜３０ｍＴｏｒｒの不活
性ガス中で、１００〜２５０℃の温度で加熱しながら、
スパッタリングによりクロム膜を被着させ、ついでスパ
ッタリングによりコバルト合金磁性膜を被着させ、その
上に保護膜を被着させることを特徴とする磁気記録円盤
の製造法。(2) While heating a non-magnetic substrate consisting of a disk with dense grooves formed in the circumferential direction in an inert gas at a pressure of 0.3 mTorr to 30 mTorr at a temperature of 100 to 250°C,
A method for manufacturing a magnetic recording disk, which comprises depositing a chromium film by sputtering, then depositing a cobalt alloy magnetic film by sputtering, and depositing a protective film thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26552486A JPS63121114A (en) | 1986-11-10 | 1986-11-10 | Magnetic recording disk and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26552486A JPS63121114A (en) | 1986-11-10 | 1986-11-10 | Magnetic recording disk and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63121114A true JPS63121114A (en) | 1988-05-25 |
Family
ID=17418338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26552486A Pending JPS63121114A (en) | 1986-11-10 | 1986-11-10 | Magnetic recording disk and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63121114A (en) |
-
1986
- 1986-11-10 JP JP26552486A patent/JPS63121114A/en active Pending
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