JPS63119310A - Surface acoustic wave resonator - Google Patents

Surface acoustic wave resonator

Info

Publication number
JPS63119310A
JPS63119310A JP26587386A JP26587386A JPS63119310A JP S63119310 A JPS63119310 A JP S63119310A JP 26587386 A JP26587386 A JP 26587386A JP 26587386 A JP26587386 A JP 26587386A JP S63119310 A JPS63119310 A JP S63119310A
Authority
JP
Japan
Prior art keywords
frequency
acoustic wave
surface acoustic
wave resonator
resonance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP26587386A
Other languages
Japanese (ja)
Inventor
Taiji Yamamoto
泰司 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP26587386A priority Critical patent/JPS63119310A/en
Publication of JPS63119310A publication Critical patent/JPS63119310A/en
Pending legal-status Critical Current

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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PURPOSE:To extend the frequency range between the resonance frequency and the frequency for the occurrence of longitudinal mode spurious by setting shapes of interdigital electrodes and grating reflectors to satisfy a specific condition. CONSTITUTION:A ratio P/L of a period pitch P of grating reflectors 22 and 23 to an electrode period L of interdigital electrodes 24 formed on the surface of a piezoelectric substrate 21 by vapor-deposition satisfies the condition expressed with a formula where epsilon is a reflection ratio. Distances between interdigital electrodes 24 and grating reflectors 22 and 23 are so set that a resonance point fr of a resonator and a center frequency fo of the reflection coefficient frequency characteristic of grating reflectors satisfy relations 1.1 fo<=fr<=2.0fr. Thus, the interval between the resonance peak of the surface acoustic wave resonator and the longitudinal mode spurious is extended, and the frequency variable width is extended when it is used in a voltage controlled oscillator.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は電圧制御発振器用弾性表面波共振子に関し、特
に電圧制御発振器の発振周波数可変幅を大幅に広げるこ
とを可能にする弾性表面波共振子に関する。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a surface acoustic wave resonator for a voltage-controlled oscillator, and in particular to a surface acoustic wave resonator that allows a voltage-controlled oscillator to greatly expand the oscillation frequency variable range. Concerning children.

〔従来の技術〕[Conventional technology]

従来、この種の弾性表面波共振子の特性は第4図で示す
ように、交叉指状電極の放射コンダクタンスGaゆ(特
性5)が最も高くなる周波数frがグレーティング反射
器の反射係数周波数特性60中心の周波数fOになるよ
うに設定する。各電極、反射器は金属膜パダーンとして
圧電基板上に形成されパターンの金属膜の圧電基板に対
する機械インピーダンス比をz=1+8(eは反射比)
とおくと、共振子のQ?高くとるために交叉指状電極の
周期りとクレーティング反射器の周期ピッチPP、−1 の条件は r−Σ(1十−’)  とおくのが一般π T、Uho等の論文「みそ格子構造の水晶SAW共振子
の最適性(Optimization of quar
tzSAW reaonator 5tructure
 withgroove grating) K提案さ
れている。
Conventionally, the characteristics of this type of surface acoustic wave resonator are as shown in FIG. Set to the center frequency fO. Each electrode and reflector is formed as a metal film pattern on the piezoelectric substrate, and the mechanical impedance ratio of the patterned metal film to the piezoelectric substrate is z = 1 + 8 (e is the reflection ratio).
Then, the Q of the resonator? In order to increase the height, the conditions for the periodicity of the interdigital electrodes and the periodic pitch PP, -1 of the crating reflector are generally set as r-Σ(10-'). Optimization of quartz SAW resonator structure
tzSAW reaonator 5structure
with groove grating) K has been proposed.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来の弾性表面波共振子の共振特性は第5図に
示すように第4図の反射係数周波数特性の中心に共振点
があるので、共振子として最適条件であると言える。こ
の弾性表面波共振子を電圧制御発振器に用いる場合、発
振周波数は共振周波数よシ低く、電圧に応じ発振周波数
が変化するが、その発振周波数可変幅は第5図に示す縦
モードスプリアス8によって制限をうけ、可変範囲が狭
いという欠点がある。
The resonance characteristics of the conventional surface acoustic wave resonator described above, as shown in FIG. 5, have a resonance point at the center of the reflection coefficient frequency characteristics of FIG. 4, and therefore can be said to be the optimum conditions for a resonator. When this surface acoustic wave resonator is used in a voltage controlled oscillator, the oscillation frequency is lower than the resonant frequency and changes depending on the voltage, but the oscillation frequency variable width is limited by the longitudinal mode spurious 8 shown in Figure 5. However, the disadvantage is that the variable range is narrow.

本発明の目的は、共振周波数と縦モードスプリアスが発
生する周波数の間の周波数範囲を広げた弾性表面波共振
子を提供することにある。
An object of the present invention is to provide a surface acoustic wave resonator in which the frequency range between the resonant frequency and the frequency at which longitudinal mode spurious occurs is widened.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の弾性表面波共振子は、交叉指状電極の電極周期
LK対するグレーティング反射器の周期(1+zs!−
!−りでめ)、かつ共振子の共振点(周π 波数)frt−グレーティング反射器の反射係数周波数
特性の中心周波数fOに対しLlfo≦fr≦!Ofr
  になるように交叉指状電極とグレーティング反射器
との間の距離を設定されている。
The surface acoustic wave resonator of the present invention has a grating reflector period (1+zs!−) with respect to the electrode period LK of the interdigital electrodes.
! - Rideme), and the resonance point of the resonator (period π wave number) frt - For the center frequency fO of the reflection coefficient frequency characteristic of the grating reflector, Llfo≦fr≦! Ofr
The distance between the interdigital electrode and the grating reflector is set so that

〔実施例〕〔Example〕

次に本発明の実施例について図面を参照して説明する。 Next, embodiments of the present invention will be described with reference to the drawings.

第1図は本発明の実施例を示す平面図である。FIG. 1 is a plan view showing an embodiment of the present invention.

図において、圧電基板21の表置には交叉指状11極2
4とクレーティング反射器22.23の導体パターンが
蒸着によつて形成されている。第1図の弾性表面波共振
子の構成は従来ID5itLa表面波共振子と一見類似
しているが、第1図の特徴は、交叉指状電極24(21
%極局期りに対するグレーグインク反射器22.230
周期ピッチPO比rが1 川PI T(1+L17≦℃≦T(1+L5T)であり、かつ共
振子の共振点fr fグレーティング反射器の反射係数
周波数特性の中心周波数fOに対し、 Llfo≦fr≦2.0fr になるように交叉指状電極とグレーティング反射器との
間の距離を設定していることにある。
In the figure, a piezoelectric substrate 21 has 11 interdigital poles 2 on its surface.
4 and the conductor patterns of the crating reflectors 22 and 23 are formed by vapor deposition. Although the structure of the surface acoustic wave resonator shown in FIG. 1 is similar to the conventional ID5itLa surface wave resonator, the feature of FIG.
Greig Ink Reflector for % Polarization 22.230
If the periodic pitch PO ratio r is 1 (1+L17≦℃≦T (1+L5T), and the resonance point frf of the resonator is the center frequency fO of the reflection coefficient frequency characteristic of the grating reflector, then Llfo≦fr≦2 The distance between the interdigital electrode and the grating reflector is set to be .0fr.

第2図は第1図の共振子の交叉指状電極24の放射コン
ダクタンスGuとグレーティング反射器22.23の反
射係数1rlの周波数特性を示す図で、1は放射コンダ
クタンスGaの周波数特性、2は反射係数1r′10周
波数特性である。この図でわかるように、前述の構成条
件によって放射コンダクタンスのピークは反射特性の高
域側の端に位置する。第3図は第1図の共振子の共振特
性を示す。図において、3は共振ピーク、4は縦モード
スプリアスである。共振ピークは従来(第5図)の共振
ピークに比べ高域側にある。
FIG. 2 is a diagram showing the frequency characteristics of the radiation conductance Gu of the interdigitated electrode 24 of the resonator shown in FIG. This is a reflection coefficient 1r'10 frequency characteristic. As can be seen from this figure, the peak of the radiation conductance is located at the high-frequency end of the reflection characteristic due to the above-mentioned configuration conditions. FIG. 3 shows the resonance characteristics of the resonator shown in FIG. In the figure, 3 is a resonance peak, and 4 is a longitudinal mode spurious. The resonance peak is on the higher frequency side compared to the resonance peak of the conventional device (FIG. 5).

本実施例では、共振ピーク3が反射特性1の高域側端に
位置するように弾性表面波共振子の構成条件を設定して
いるので、共振ピーク3と縦モードスプリアス4との間
隔は、第5@O従来の弾性表面波共振子の共振特性と比
べると大晦に広がっている。したがって電圧制御発振器
に用いる場合、発振周波数の可変範囲の広帯域化を可能
にする効果がある。さらに、縦モードスゲリアス40レ
ベルは低減されるという効果もある。
In this example, the configuration conditions of the surface acoustic wave resonator are set so that the resonance peak 3 is located at the high-frequency end of the reflection characteristic 1, so the interval between the resonance peak 3 and the longitudinal mode spurious 4 is as follows. 5th @O Compared to the resonance characteristics of a conventional surface acoustic wave resonator, the resonance characteristics are wider than that of the New Year's Eve. Therefore, when used in a voltage controlled oscillator, it has the effect of widening the variable range of the oscillation frequency. Furthermore, there is also the effect that the vertical mode Sgelius 40 level is reduced.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、弾性表面波共振子
の共振ピークと縦モードスプリアスとの間隔が広まると
いう効果が得られ、電圧制御発振器に使用すれば周波数
可変幅を広げることができる。
As described above, according to the present invention, the effect of widening the interval between the resonance peak of the surface acoustic wave resonator and the longitudinal mode spurious is obtained, and when used in a voltage controlled oscillator, the frequency variable range can be widened.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の実施例を示す平面図、第2図は第1図
の弾性表面波共振子の交叉指状電極の放射コンダクタン
スとグレーティング反射器の反射係数の周波数特性を示
す線図、第3図は第1図の弾性表面波共振子の共振特性
を示す線図、第4図は従来の弾性表面波共振子における
交叉指状電極の放射コンダクタンスとクレーティング反
射器の反射係数の周波数特性を示す線図、第改図は従来
の弾性表面波共振子の共振特性を示す線図である。 工・・・・・・放射コンダクタンス、2・・・・・・反
射特性、3・・・・・・共振ピーク、4・・・・・・縦
モードスプリアス、5°°°°°・放射コンダクタンス
、6・・・・・・反射%性、7・・・・・・共振ピーク
、8・・・・・・縦モードスゲリアス。 第 5 図
1 is a plan view showing an embodiment of the present invention; FIG. 2 is a diagram showing the frequency characteristics of the radiation conductance of the interdigital electrodes of the surface acoustic wave resonator of FIG. 1 and the reflection coefficient of the grating reflector; Figure 3 is a diagram showing the resonance characteristics of the surface acoustic wave resonator shown in Figure 1, and Figure 4 is a diagram showing the radiation conductance of the interdigital electrodes and the frequency of the reflection coefficient of the crating reflector in a conventional surface acoustic wave resonator. Diagram Showing Characteristics The second revised diagram is a diagram showing resonance characteristics of a conventional surface acoustic wave resonator. Engineering: Radiation conductance, 2: Reflection characteristics, 3: Resonance peak, 4: Longitudinal mode spurious, 5°°°°° Radiation conductance , 6... Reflection percentage, 7... Resonance peak, 8... Longitudinal mode sgerious. Figure 5

Claims (1)

【特許請求の範囲】  圧電基板上に金属膜の交叉指状電極とグレーティング
反射器が形成された弾性表面波共振子において、前記金
属膜の前記圧電基板に対する弾性表面波の機械インピー
ダンス比をZ=1+ε(εは反射比)とし、前記交叉指
状電極の電極周期Lに対する前記グレーティング反射器
の周期Pの比P/Lが ▲数式、化学式、表等があります▼ であり、かつ共振点における周波数f_rを前記グレー
ティング反射器の反射係数周波数特性の中心周波数fo
に対し1.1fo≦fr≦2.0foになるように前記
交叉指状電極と前記グレーティング反射器との間の距離
が設定されていることを特徴とする弾性表面波共振子。
[Scope of Claims] In a surface acoustic wave resonator in which interdigitated metal film electrodes and a grating reflector are formed on a piezoelectric substrate, the mechanical impedance ratio of the surface acoustic wave of the metal film to the piezoelectric substrate is defined as Z= 1+ε (ε is the reflection ratio), and the ratio P/L of the period P of the grating reflector to the electrode period L of the interdigital electrode is ▲There are mathematical formulas, chemical formulas, tables, etc.▼, and the frequency at the resonance point is f_r is the center frequency fo of the reflection coefficient frequency characteristic of the grating reflector.
A surface acoustic wave resonator characterized in that a distance between the interdigital electrode and the grating reflector is set so that 1.1fo≦fr≦2.0fo.
JP26587386A 1986-11-07 1986-11-07 Surface acoustic wave resonator Pending JPS63119310A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26587386A JPS63119310A (en) 1986-11-07 1986-11-07 Surface acoustic wave resonator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26587386A JPS63119310A (en) 1986-11-07 1986-11-07 Surface acoustic wave resonator

Publications (1)

Publication Number Publication Date
JPS63119310A true JPS63119310A (en) 1988-05-24

Family

ID=17423279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26587386A Pending JPS63119310A (en) 1986-11-07 1986-11-07 Surface acoustic wave resonator

Country Status (1)

Country Link
JP (1) JPS63119310A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999046856A1 (en) * 1998-03-11 1999-09-16 Fujitsu Limited Surface acoustic wave filter
US6255916B1 (en) 1993-05-27 2001-07-03 Fujitsu Limited Resonator-type surface-acoustic-wave filter for reducing the signal strength of a spurious peak

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60140918A (en) * 1983-12-28 1985-07-25 Toshiba Corp Surface acoustic wave resonator
JPS60213110A (en) * 1984-04-06 1985-10-25 Toyo Commun Equip Co Ltd Two-port type elastic surface wave resonator

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60140918A (en) * 1983-12-28 1985-07-25 Toshiba Corp Surface acoustic wave resonator
JPS60213110A (en) * 1984-04-06 1985-10-25 Toyo Commun Equip Co Ltd Two-port type elastic surface wave resonator

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6255916B1 (en) 1993-05-27 2001-07-03 Fujitsu Limited Resonator-type surface-acoustic-wave filter for reducing the signal strength of a spurious peak
WO1999046856A1 (en) * 1998-03-11 1999-09-16 Fujitsu Limited Surface acoustic wave filter
US6577210B1 (en) 1998-03-11 2003-06-10 Fujitsu Limited Surface acoustic wave filter having plural propagation paths and a coupler

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