JPS63117959A - Dielectric ceramic composition - Google Patents
Dielectric ceramic compositionInfo
- Publication number
- JPS63117959A JPS63117959A JP61261831A JP26183186A JPS63117959A JP S63117959 A JPS63117959 A JP S63117959A JP 61261831 A JP61261831 A JP 61261831A JP 26183186 A JP26183186 A JP 26183186A JP S63117959 A JPS63117959 A JP S63117959A
- Authority
- JP
- Japan
- Prior art keywords
- composition
- main component
- ceramic composition
- dielectric ceramic
- component composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims description 31
- 239000000919 ceramic Substances 0.000 title claims description 11
- 238000010586 diagram Methods 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- FKSZLDCMQZJMFN-UHFFFAOYSA-N [Mg].[Pb] Chemical compound [Mg].[Pb] FKSZLDCMQZJMFN-UHFFFAOYSA-N 0.000 claims description 2
- HEPLMSKRHVKCAQ-UHFFFAOYSA-N lead nickel Chemical compound [Ni].[Pb] HEPLMSKRHVKCAQ-UHFFFAOYSA-N 0.000 claims description 2
- LIABKAQKQSUQJX-UHFFFAOYSA-N [Mn].[Pb] Chemical compound [Mn].[Pb] LIABKAQKQSUQJX-UHFFFAOYSA-N 0.000 claims 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 8
- 229910052573 porcelain Inorganic materials 0.000 description 8
- 238000005245 sintering Methods 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000007569 slipcasting Methods 0.000 description 2
- KOAWAWHSMVKCON-UHFFFAOYSA-N 6-[difluoro-(6-pyridin-4-yl-[1,2,4]triazolo[4,3-b]pyridazin-3-yl)methyl]quinoline Chemical compound C=1C=C2N=CC=CC2=CC=1C(F)(F)C(N1N=2)=NN=C1C=CC=2C1=CC=NC=C1 KOAWAWHSMVKCON-UHFFFAOYSA-N 0.000 description 1
- 101000886895 Magnolia grandiflora Alpha-terpineol synthase, chloroplastic Proteins 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、誘電体磁器組成物、特に1000’C以下の
低温で焼結でき、誘電率が高く、室温および高温におけ
る絶縁抵抗が高く、しかも機械的強度の高い誘電体磁器
組成物に関するものである。Detailed Description of the Invention [Industrial Application Field] The present invention provides a dielectric ceramic composition, which can be sintered at a low temperature of 1000'C or less, has a high dielectric constant, has a high insulation resistance at room temperature and high temperature, Furthermore, the present invention relates to a dielectric ceramic composition with high mechanical strength.
「従来の技術とその問題点]
従来、誘電体磁器組成物として、チタン酸バリウム(B
aTi03)を主成分とする磁器が広く実用化されてい
るが、チタン酸バリウムを主成分とするものは、通常1
300’C〜1400°Cと0う高い焼結温度である。"Prior art and its problems" Conventionally, barium titanate (B
Porcelain whose main component is aTi03) has been widely put into practical use, but porcelain whose main component is barium titanate is usually 1.
The sintering temperature is much higher, from 300'C to 1400°C.
このためこれを積層形コンデンサに利用する場合には、
内部電極としてこの焼結温度に耐え得る材料、例えば白
金、パラジウムなどの高価な貴金属を使用しなければな
らず、製造コストが高くなるという欠点がある。積層形
コンテンサを安く作るためには、銀、ニッケルなどを主
成分とする安価な金属が内部電極に使用できるような、
できるだけ低温、特に1000’C以下で焼結できる磁
器が必要である。Therefore, when using this for multilayer capacitors,
A material that can withstand this sintering temperature must be used for the internal electrodes, for example, an expensive noble metal such as platinum or palladium, which has the disadvantage of increasing manufacturing costs. In order to make a laminated capacitor cheaply, it is necessary to use inexpensive metals mainly composed of silver, nickel, etc., which can be used for the internal electrodes.
There is a need for porcelain that can be sintered at as low a temperature as possible, especially below 1000'C.
また誘電体磁器組成物の電気的特性として、誘電率が高
く誘電損失が小さく、絶縁抵抗が高いことが基本的に要
求される。Furthermore, the electrical properties of the dielectric ceramic composition are basically required to have a high dielectric constant, low dielectric loss, and high insulation resistance.
また、積層形チップコンデンサの場合は、チップコンデ
ンサを基板に実装したとき、基板とチップコンデンサを
構成している磁器との熱膨張係数の違いにより、チップ
コンデンサに機械的な歪みが加わり、チップコンデンサ
にクラックが発生したり、破損したりする場合がある。In addition, in the case of multilayer chip capacitors, when the chip capacitor is mounted on a board, mechanical distortion is applied to the chip capacitor due to the difference in thermal expansion coefficient between the board and the porcelain that makes up the chip capacitor. Cracks may occur or damage may occur.
この場合、コンデンサを形成している磁器の機械的強度
が低いほどクラックが入りやすく、容易に破損し信頼性
が低くなるため、磁器の機械的強度をできるだけ増大さ
せることは実用上極めて重要なことである。In this case, the lower the mechanical strength of the porcelain that forms the capacitor, the more likely it is to crack, break easily, and reduce reliability, so it is extremely important for practical purposes to increase the mechanical strength of the porcelain as much as possible. It is.
また誘電体層と絶縁体層などを積層した構造をもってい
る複合積層セラミック部品においては、絶縁体の焼結温
度が850〜1000’Cであること、低コスト化のた
めに銀、ニッケルなどを主成分とする安価な金属を導体
として利用すること、焼結時の複合化による異種物質間
のストレスの売主および絶縁体の収縮特性とのマツチン
グなどのために、1000°C以下で焼結ができ、収縮
特性をコントロールした機械的強度の高い誘電体磁器が
必要である。In addition, in composite laminated ceramic parts that have a laminated structure of dielectric layers and insulator layers, the sintering temperature of the insulator is 850 to 1000'C, and silver, nickel, etc. are mainly used to reduce costs. Sintering is not possible at temperatures below 1000°C due to the use of inexpensive metals as conductors, the stress between dissimilar materials due to compositing during sintering, and the matching with the shrinkage characteristics of insulators. , dielectric porcelain with high mechanical strength and controlled shrinkage characteristics is required.
ところで、Pb(Mg1/2W172)03 PbT
i 03 P b (M(j1/3 N b2/3
) 03系については特開昭55−111011号公
報に開示されているが比抵抗や機械的強度に関する開示
は全くされておらずこの磁器組成物の実用性は明らかで
はなかった。By the way, Pb(Mg1/2W172)03 PbT
i 03 P b (M(j1/3 N b2/3
) 03 series is disclosed in JP-A-55-111011, but there is no disclosure regarding specific resistance or mechanical strength, and the practicality of this ceramic composition was not clear.
本発明は以上述べたような従来の事情に対処してなされ
たもので、1000℃以下の低温領域で焼結でき、誘電
率が高いと共に、誘電損失が小さく、かつ絶縁抵抗の値
が高い優れた電気的特性を有し、ざらに機械的強度も大
きい信頼性の高い磁器組成物を提供することを目的とす
る。The present invention has been made in response to the conventional circumstances described above, and has the advantages of being able to be sintered at a low temperature of 1000°C or less, having a high dielectric constant, low dielectric loss, and high insulation resistance. The object of the present invention is to provide a highly reliable porcelain composition that has good electrical properties and high mechanical strength.
[問題点を解決するための手段]
本発明は、マグネシウム・タングステン酸鉛[Pb (
Mg1/2 Wl/2 ) 03 ] 、f タンME
[PbT+03]およびニッケル・ニオブ酸鉛[Pb
(N i 1/3 N b2/3 > 03 ]からな
る3成構成成物を[P b (Mg1/2 Wl/2
> 03 ] x[PbT ! 03 ]y [Pb(
N ! Nb2/3 >03]7と表わしたときに
(ただしx+y+z=i、oo)、この3成分組成図に
おいて以下の組成点(x= 0.693. y= 0.
297. z= 0.01 ) ・(a)(x= 0.
495. y= 0.495. z= 0.01 )
・(b)(x= 0.195. y= 0.455.
z= 0.35 )・・・(C)(x= 0.10 、
y= 0.40 、 z= 0.50 )・・・(d
)(x= 0.06 、 y= 0.24 、 z=
0.70 > ・(e)を結ぶ線上、およびこの5点に
囲まれる組成範囲にある主成分組成物に副成分としてマ
ンガン・ニオブ酸鉛[Pb (Mn1/3 Nb2/3
> 03 ]を主成分組成物に対して0.05〜1
omo 1%、銀を主成分組成物に対して0.02〜2
.0重量%添加含有せしめてなることを特徴とする誘電
体磁器組成物である。[Means for solving the problems] The present invention provides magnesium lead tungstate [Pb (
Mg1/2 Wl/2 ) 03 ] , f Tan ME
[PbT+03] and nickel lead niobate [Pb
A ternary component consisting of (N i 1/3 N b2/3 > 03
> 03] x [PbT! 03 ]y [Pb(
N! Nb2/3 >03]7 (where x+y+z=i, oo), the following composition points (x= 0.693. y= 0.
297. z= 0.01) ・(a)(x= 0.
495. y=0.495. z=0.01)
・(b) (x= 0.195. y= 0.455.
z= 0.35)...(C)(x= 0.10,
y=0.40, z=0.50)...(d
) (x= 0.06, y= 0.24, z=
0.70 > - Manganese lead niobate [Pb (Mn1/3 Nb2/3
> 03 ] to the main component composition from 0.05 to 1
omo 1%, silver 0.02-2 to main component composition
.. A dielectric ceramic composition characterized in that it contains 0% by weight.
本発明における主成分組成範囲を表す3成分組成図は第
1図で示される。図中、(a) (b) (cHd)お
よび(e)は各組成点を表し、本発明に含まれる組成範
囲は図の斜線で示す範囲およびその境界線上でおる。A three-component composition diagram showing the main component composition range in the present invention is shown in FIG. In the figure, (a), (b), (cHd), and (e) represent each composition point, and the composition range included in the present invention is the range shown by diagonal lines in the figure and its boundary line.
主成分組成範囲を表す3成分組成図において、組成点(
b)(C)および(d)を結ぶ線の外側では、キュリー
点が実用範囲より高温側に大きくずれるため、誘電率が
小さくなる。一方、組成点(a)および(e)を結ぶ線
の外側では、キュリー点が実用範囲より低温側に大きく
ずれるため、誘電率が小さくなり、実用的ではない。ま
た副成分であるPb (Mr11/3 Nb2/3 >
03 (7)添加量が0.05m01%未満では抗折
強度の改善効果が小さく、10mO1%を超えると逆に
抗折強度が小ざくなるため実用的ではない。また副成分
の八〇の添加量が0.02重烙%未満では、収縮率の制
御効果が小さく、2.0重量%を超えると比抵抗が小さ
くなり、実用的ではない。In a three-component composition diagram showing the main component composition range, the composition point (
b) Outside the line connecting (C) and (d), the Curie point deviates significantly to the higher temperature side than the practical range, so the dielectric constant decreases. On the other hand, outside the line connecting composition points (a) and (e), the Curie point deviates significantly to the lower temperature side than the practical range, so the dielectric constant becomes small and it is not practical. In addition, Pb (Mr11/3 Nb2/3 >
(7) If the amount added is less than 0.05 mO1%, the effect of improving the transverse strength is small, and if it exceeds 10 mO1%, the transverse strength decreases, which is not practical. Further, if the amount of the subcomponent 80 added is less than 0.02% by weight, the effect of controlling the shrinkage rate is small, and if it exceeds 2.0% by weight, the specific resistance becomes small, which is not practical.
[実施例]
以下、本発明を実施例および比較例により詳細に説明す
る。[Examples] Hereinafter, the present invention will be explained in detail with reference to Examples and Comparative Examples.
実施例1〜38.比較例1〜22
出発原料として純度99.9%以上の酸化鉛(PbO)
、酸化マグネシウム(Mc+O)、酸化タングステン<
WO3> 、酸化チタン(T!02)、酸化ニッケル(
N i O> 、酸化ニオブ(Nb205)、炭酸マン
ガン(MnCO3)および銀(AQ)を使用し、表1に
示した配合比となるように各々秤量する。次に秤量した
各材料をボールミルにより湿式混合したのち750〜9
00℃で予焼を行ない、この粉末をボールミルで粉砕し
、ろ過、乾燥後、スリップキャスティング成膜法により
グリーンシートにする。Examples 1-38. Comparative Examples 1 to 22 Lead oxide (PbO) with a purity of 99.9% or more as a starting material
, magnesium oxide (Mc+O), tungsten oxide<
WO3>, titanium oxide (T!02), nickel oxide (
N i O>, niobium oxide (Nb205), manganese carbonate (MnCO3), and silver (AQ) are each weighed so as to have the compounding ratio shown in Table 1. Next, the weighed ingredients were wet mixed using a ball mill, and then
Pre-baking is performed at 00°C, and the powder is pulverized in a ball mill, filtered and dried, and then formed into a green sheet by slip casting film formation method.
スリップキャスティング成膜法とは、予焼粉末を有はバ
インダー、@機溶剤、有機可塑剤とともにホモミキサー
で混合し、有機シート上にドクターブレードから流れ出
るスラリーを乾燥し20μ′rrL〜100μmの厚み
にグリーンシートを成膜する技術である。The slip casting film forming method involves mixing pre-fired powder with a binder, organic solvent, and organic plasticizer in a homomixer, and drying the slurry flowing out from a doctor blade onto an organic sheet to a thickness of 20μ'rrL to 100μm. This is a technology for forming green sheets.
この方法で得たグリーンシートを多数枚積層し熱プレス
し、形状20m’、厚み約1mの平板を作成した。次に
各試料を空気中で脱バインダー工程を経たのち900〜
1000°Cの温度で1時間焼結した。A large number of green sheets obtained by this method were laminated and hot pressed to create a flat plate with a shape of 20 m' and a thickness of about 1 m. Next, each sample was subjected to a debinding process in the air, and then
Sintering was performed at a temperature of 1000°C for 1 hour.
焼結した平板の上下面に600℃で銀電極を焼付け、デ
ジタルLCRメーターで周波数1Kl(Z、電圧1yr
、m、s、 、温度20’Cで容量と誘電損失を測定し
、誘電率を算出した。Silver electrodes were baked on the top and bottom surfaces of the sintered flat plate at 600°C, and a frequency of 1 Kl (Z, voltage 1 yr) was measured using a digital LCR meter.
, m, s, The capacitance and dielectric loss were measured at a temperature of 20'C, and the dielectric constant was calculated.
次に超絶縁抵抗計で50Vの電圧を1分間印加して、絶
縁抵抗を温度20’Cで測定し、比抵抗を算出した。Next, a voltage of 50 V was applied for 1 minute using a super insulation resistance meter, the insulation resistance was measured at a temperature of 20'C, and the specific resistance was calculated.
機械的性質を抗折強度で評価するため、焼結した平板か
ら厚ざ1rfun1幅3馴、長さ約15゜の矩形板を1
0枚切り出した。支点間距離を10M度τ[kCI/〜
1を求めた。ただし、ρは支点間距離、tは試料の厚み
、Wは試料の幅でおる。In order to evaluate the mechanical properties in terms of bending strength, one rectangular plate with a thickness of 1rfun1 width of 3mm and a length of approximately 15° was prepared from the sintered flat plate.
I cut out 0 pieces. The distance between the fulcrums is 10M degrees τ [kCI/~
I asked for 1. However, ρ is the distance between the supporting points, t is the thickness of the sample, and W is the width of the sample.
収縮率は850°Cおよび900’Cでの温度で取り出
したサンプルの平板上に形成した収縮率測定用パターン
から寸法を測定し、焼成前の寸法との差から算出した。The shrinkage rate was calculated from the difference between the dimensions of the shrinkage rate measuring pattern formed on the flat plate of the sample taken out at 850°C and 900'C and the size before firing.
このようにして得られた磁器の主成分[Pb(Mg17
2 Wl/2 ) 03 ]X [PbT ! 03
]s。The main component of the porcelain thus obtained [Pb(Mg17
2 Wl/2 ) 03 ]X [PbT ! 03
]s.
[Pb (N !1/3 Nb2/3 )03 ]Zの
配合比x1y、zおよび副成分添加量と誘電率、誘電損
失、20℃の比抵抗、抗折強度および850°Cと90
0’Cの収縮率の関係を表1に示す。[Pb(N!1/3Nb2/3)03]Z blending ratio x1y, z and amount of subcomponents added, dielectric constant, dielectric loss, specific resistance at 20°C, bending strength, and 850°C and 90°C
Table 1 shows the relationship between shrinkage rates at 0'C.
表1に示した結果から明らかなようにPb(MQ1/2
W1/2 > 03 PbT ! 03 Pb
(N ! 1/3 N b2/3 > 03三成分組成
物に副成分として、Pb(M n 1/3 N b2/
3 > 03およびAQを添加含有せしめた本発明の範
囲内のものは、誘電率が3210〜12320と高く、
誘電損失が0.2〜2.9%と小ざく、比抵抗が20’
Cにおいて3.6×1012〜1.9×1013Ω”
cmと高く、抗折強度が1100〜1380 ’KQ/
criiと実用上十分高い値を示し、更に収縮率におい
ては850°Cで9.8〜10.8%、900 ’Cで
12.8〜13.2%に制御されており、この収縮率は
複合積層セラミック部品の絶縁体の収縮率とほぼ一致し
た値になっている。As is clear from the results shown in Table 1, Pb(MQ1/2
W1/2 > 03 PbT! 03 Pb
(N! 1/3 N b2/3 > 03 Pb(M n 1/3 N b2/
3 > 03 and AQ within the range of the present invention have a high dielectric constant of 3210 to 12320,
Dielectric loss is small at 0.2-2.9%, resistivity is 20'
3.6 x 1012 to 1.9 x 1013 Ω at C”
cm, and has a bending strength of 1100 to 1380'KQ/
The shrinkage rate is controlled to 9.8-10.8% at 850°C and 12.8-13.2% at 900'C. This value almost matches the shrinkage rate of the insulator of composite laminated ceramic parts.
実施例および比較例で用いた主成分配合比における各組
成点を第2図に示す。図中、番号1,2゜3・・・20
はそれぞれ表1にあける主成分配合比番号に対応する各
組成点である。FIG. 2 shows each composition point in the blending ratio of the main components used in the Examples and Comparative Examples. In the diagram, numbers 1, 2゜3...20
are each composition point corresponding to the main component blending ratio number shown in Table 1.
[発明の効果]
以上説明したように本発明の誘電体磁器組成物は、焼結
温度が1000’C以下の低温であるため、積層コンデ
ンサの場合内部電極の低価格化を実現できると共に、省
エネルギーや炉材の節約にもなる。[Effects of the Invention] As explained above, since the dielectric ceramic composition of the present invention has a low sintering temperature of 1000'C or less, it is possible to reduce the cost of internal electrodes in multilayer capacitors and save energy. It also saves on furnace materials.
また、得られる磁器組成物は物理的特性、電気的特性に
優れた信頼性の高いものである。Furthermore, the obtained ceramic composition has excellent physical properties and electrical properties and is highly reliable.
第1図は本発明の主成分組成範囲を示す図、第2図は本
発明の主成分組成範囲と実施例および比較例に示した組
成点との関係を示す図である。FIG. 1 is a diagram showing the main component composition range of the present invention, and FIG. 2 is a diagram showing the relationship between the main component composition range of the present invention and the composition points shown in Examples and Comparative Examples.
Claims (1)
酸鉛[PbTiO_3]およびニッケル・ニオブ酸鉛[
Pb(Ni_1_/_3Nb_2_/_3)O_3]か
らなる3成分組成物を[Pb(Mg_1_/_2W_1
_/_2)O_3]_x[PbTiO_3]_y[Pb
(Ni_1_/_3Nb_2_/_3)O_3]_zと
表わしたときに(ただしx+y+z=1.00)、この
3成分組成図において以下の組成点 (x=0.693、y=0、297、z=0.01)(
x=0.495、y=0.495、z=0.01)(x
=0.195、y=0.455、z=0.35)(x=
0.10、y=0、40、z=0.50)(x=0.0
6、y=0.24、z=0.70)を結ぶ線上、および
この5点に囲まれる組成範囲にある主成分組成物に副成
分としてマンガン・ニオブ酸鉛[Pb(Mn_1_/_
3Nb_2_/_3)O_3]を主成分組成物に対して
0.05〜10mol%、銀を主成分組成物に対して0
.02〜2.0重量%添加含有せしめてなることを特徴
とする誘電体磁器組成物。[Claims] Magnesium lead tungstate [Pb (Mg_1_/_2W_1_/_2)O_3], lead titanate [PbTiO_3] and nickel lead niobate [
A three-component composition consisting of [Pb(Mg_1_/_2W_1
___/_2)O_3]_x[PbTiO_3]_y[Pb
(Ni_1_/_3Nb_2_/_3)O_3]_z (however, x+y+z=1.00), the following composition points (x=0.693, y=0, 297, z=0) in this three-component composition diagram .01)(
x=0.495, y=0.495, z=0.01) (x
=0.195, y=0.455, z=0.35) (x=
0.10, y=0, 40, z=0.50) (x=0.0
Manganese lead niobate [Pb(Mn_1_/_
3Nb_2_/_3)O_3] to the main component composition, 0.05 to 10 mol%, and silver to the main component composition, 0.05 to 10 mol%.
.. 1. A dielectric ceramic composition comprising: 0.02 to 2.0% by weight.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61261831A JPS63117959A (en) | 1986-11-05 | 1986-11-05 | Dielectric ceramic composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61261831A JPS63117959A (en) | 1986-11-05 | 1986-11-05 | Dielectric ceramic composition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63117959A true JPS63117959A (en) | 1988-05-21 |
JPH053426B2 JPH053426B2 (en) | 1993-01-14 |
Family
ID=17367341
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61261831A Granted JPS63117959A (en) | 1986-11-05 | 1986-11-05 | Dielectric ceramic composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63117959A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5219810A (en) * | 1991-04-12 | 1993-06-15 | Nec Corporation | Ceramic composition |
US5788876A (en) * | 1994-11-30 | 1998-08-04 | U.S. Philips Corporation | Complex substituted lanthanum-lead-zirconium-titanium perovskite, ceramic composition and actuator |
-
1986
- 1986-11-05 JP JP61261831A patent/JPS63117959A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5219810A (en) * | 1991-04-12 | 1993-06-15 | Nec Corporation | Ceramic composition |
US5788876A (en) * | 1994-11-30 | 1998-08-04 | U.S. Philips Corporation | Complex substituted lanthanum-lead-zirconium-titanium perovskite, ceramic composition and actuator |
Also Published As
Publication number | Publication date |
---|---|
JPH053426B2 (en) | 1993-01-14 |
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