JPS6311699Y2 - - Google Patents

Info

Publication number

JPS6311699Y2

JPS6311699Y2 JP9135381U JP9135381U JPS6311699Y2 JP S6311699 Y2 JPS6311699 Y2 JP S6311699Y2 JP 9135381 U JP9135381 U JP 9135381U JP 9135381 U JP9135381 U JP 9135381U JP S6311699 Y2 JPS6311699 Y2 JP S6311699Y2

Authority

JP

Japan

Prior art keywords

ohmic electrode

semiconductor

electrode

porcelain

holes

Prior art date

1981-06-20

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

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• 239000004065 semiconductor Substances 0.000 claims description 34
• 229910052573 porcelain Inorganic materials 0.000 claims description 14
• 238000010405 reoxidation reaction Methods 0.000 claims description 11
• 239000003985 ceramic capacitor Substances 0.000 claims description 9
• 239000003990 capacitor Substances 0.000 description 14
• 239000000919 ceramic Substances 0.000 description 7
• BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
• 229910052709 silver Inorganic materials 0.000 description 4
• 239000004332 silver Substances 0.000 description 4
• 238000007796 conventional method Methods 0.000 description 3
• 238000004519 manufacturing process Methods 0.000 description 3
• 239000000203 mixture Substances 0.000 description 3
• 229910052782 aluminium Inorganic materials 0.000 description 2
• XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
• 229910002113 barium titanate Inorganic materials 0.000 description 2
• JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
• 229910003460 diamond Inorganic materials 0.000 description 2
• 239000010432 diamond Substances 0.000 description 2
• 238000000605 extraction Methods 0.000 description 2
• 230000002093 peripheral effect Effects 0.000 description 2
• 229910052715 tantalum Inorganic materials 0.000 description 2
• GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
• 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
• 229910010413 TiO 2 Inorganic materials 0.000 description 1
• WREOVXQYNRJYAJ-UHFFFAOYSA-N [Sb].[Zn].[Ag] Chemical compound [Sb].[Zn].[Ag] WREOVXQYNRJYAJ-UHFFFAOYSA-N 0.000 description 1
• 229910021523 barium zirconate Inorganic materials 0.000 description 1
• DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 description 1
• 239000011230 binding agent Substances 0.000 description 1
• 230000015572 biosynthetic process Effects 0.000 description 1
• 229910010293 ceramic material Inorganic materials 0.000 description 1
• 239000011248 coating agent Substances 0.000 description 1
• 238000000576 coating method Methods 0.000 description 1
• 230000007423 decrease Effects 0.000 description 1
• 239000003989 dielectric material Substances 0.000 description 1
• 230000000694 effects Effects 0.000 description 1
• 238000010292 electrical insulation Methods 0.000 description 1
• 239000002003 electrode paste Substances 0.000 description 1
• 238000005516 engineering process Methods 0.000 description 1
• 238000010304 firing Methods 0.000 description 1
• 238000009413 insulation Methods 0.000 description 1
• 239000012212 insulator Substances 0.000 description 1
• 238000004898 kneading Methods 0.000 description 1
• 230000001590 oxidative effect Effects 0.000 description 1
• 239000010970 precious metal Substances 0.000 description 1
• 238000005476 soldering Methods 0.000 description 1