JPS63116473A - Method for assembling semiconductor acceleration sensor - Google Patents
Method for assembling semiconductor acceleration sensorInfo
- Publication number
- JPS63116473A JPS63116473A JP61262557A JP26255786A JPS63116473A JP S63116473 A JPS63116473 A JP S63116473A JP 61262557 A JP61262557 A JP 61262557A JP 26255786 A JP26255786 A JP 26255786A JP S63116473 A JPS63116473 A JP S63116473A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- jig
- sensor chip
- solder
- pedestal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 11
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 230000001133 acceleration Effects 0.000 title claims description 9
- 229910000679 solder Inorganic materials 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000000853 adhesive Substances 0.000 claims abstract description 18
- 230000001070 adhesive effect Effects 0.000 claims abstract description 18
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000011888 foil Substances 0.000 abstract description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 238000009434 installation Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野］
本発明は、センサチップを台座を介して基板に固定する
半導体式加速度センサの組付は方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for assembling a semiconductor acceleration sensor in which a sensor chip is fixed to a substrate via a pedestal.
一般的な半導体式加速度センサの組付は方法として考え
られる方法を第２図（ａ）乃至（Ｃ）に示す側面図を用
いて説明する。まず、同図（ａ）に示すように、センサ
チップ１の自由端２に負荷３を半田７等により接着し、
同図（ｂ）に示すように、センサチップ１の固定端４に
台座５を半田７等により接着し、引き続き、同図（Ｃ）
に示す゛ように、台座５を基板６に半田７等により接着
固定する事により組付けるという方法が考えられる。A possible method for assembling a general semiconductor acceleration sensor will be explained using side views shown in FIGS. 2(a) to 2(C). First, as shown in Figure (a), a load 3 is bonded to the free end 2 of the sensor chip 1 with solder 7 or the like.
As shown in Figure (B), the pedestal 5 is bonded to the fixed end 4 of the sensor chip 1 with solder 7, etc.
As shown in FIG. 2, a method of assembling the pedestal 5 by adhesively fixing it to the substrate 6 using solder 7 or the like is conceivable.
（発明が解決しようとする問題点〕
上記の方法によると、これらの接着に３工程を有してお
り、工程数が多いために必然的にコストが高くなる事が
予想される。又、−度半田７をリフローしたものを、再
度リフローしている為に半田７の成分が半田を良好に接
着するために設けられた下地層の中に入り込んでしまい
、その接着強度を低下させるといった不具合が生じて可
能性がある。(Problems to be Solved by the Invention) According to the above method, there are three steps for bonding these, and it is expected that the cost will inevitably increase due to the large number of steps. Since the solder 7 that has been reflowed is reflowed again, the components of the solder 7 get into the base layer that is provided to properly bond the solder, reducing the adhesive strength. It is possible that this may occur.
そこで本発明は、組付は工程の工程数を低減する事によ
り、コストを低下させ、接着部の強度を確保する事を目
的としている。Therefore, the present invention aims to reduce the number of assembly steps, thereby lowering costs and ensuring the strength of the bonded portion.
上記の目的を達成するために本発明は、凹部の形成され
た治具の該凹部内に、その接着面が上を向くようにして
センサチップを挿設し、前記凹部内で該センサチップの
上部に第１の接着手段を介して台座を搭載し、該台座の
接着面に平行な面で前記治具の凹部の形成された側の表
面上に、前記台座を搭載すべく基板を、該台座との間に
第２の接着手段を介して固定し、そして、加熱する事に
より前記基板、前記台座及び前記センサチップの接着を
同時に行う事を特徴とする半導体式加速度゛センサの組
付は方法を採用している。In order to achieve the above object, the present invention includes inserting a sensor chip into the recess of a jig in which the recess is formed, with its adhesive surface facing upward, and inserting the sensor chip in the recess. A pedestal is mounted on the upper part via a first adhesive means, and a substrate is mounted on the surface of the jig on the side where the recess is formed in a plane parallel to the adhesive surface of the pedestal. The assembly of the semiconductor acceleration sensor is characterized in that the substrate, the pedestal, and the sensor chip are simultaneously bonded by being fixed to the pedestal via a second adhesive means and then heated. method is adopted.
以下、本発明を図面に示す実施例を用いて詳細に説明す
る。Hereinafter, the present invention will be explained in detail using embodiments shown in the drawings.
第１図は本発明の一実施例を説明する為の斜視図である
。図において、１０は切欠き部１０ａの形成された治具
であり、その切欠き部１０ａ内には切欠いた体積よりも
小体積の小台座１０ｂが、切欠き部１０ａ内における側
壁１０ｃ、１０ｄに接するように形成されている。尚、
小台座１０ｂの上面は治具１０の上面と平行に形成され
ている。FIG. 1 is a perspective view for explaining one embodiment of the present invention. In the figure, 10 is a jig in which a notch 10a is formed, and within the notch 10a, a small pedestal 10b having a smaller volume than the notched volume is attached to side walls 10c and 10d in the notch 10a. are formed so that they touch each other. still,
The upper surface of the small pedestal 10b is formed parallel to the upper surface of the jig 10.
１１は例えばＳｉ等の半導体からなる半導体式加速度セ
ンサのセンサチップであり、貫通溝ｌｉｄ、ダイヤフラ
ム部１１ｃをエツチングにより形成する事により自由端
ｌｉｅを形成しており、その自由端１１ｅには負荷とし
ての半田層１１ｂが短冊状に複数本形成されている。又
、センサチップ１１の外周で長辺に平行な部分には半田
の濡れ性を向上する為にＮ１−Ａ＋１渾着膜等の下地層
１１ａが形成されている。そして、このセンサチップ１
１を下地層１１ａが上（図中矢印方向）を向くようにし
て小台座１０ｂの上面にその側面が側壁１０ｃ、１０ｄ
に接するように配置する。１２は半田箔であり、センサ
チップ１１の下地層１１ａ上に配置する。Reference numeral 11 denotes a sensor chip of a semiconductor acceleration sensor made of a semiconductor such as Si, and a free end lie is formed by etching a through groove lid and a diaphragm part 11c, and a load is applied to the free end 11e. A plurality of solder layers 11b are formed in a rectangular shape. Further, on the outer periphery of the sensor chip 11, a base layer 11a such as an N1-A+1 binding film is formed on a portion parallel to the long side in order to improve solder wettability. And this sensor chip 1
1 with the base layer 11a facing upward (in the direction of the arrow in the figure), and its side walls 10c, 10d on the upper surface of the small pedestal 10b.
Place it so that it touches. A solder foil 12 is placed on the base layer 11a of the sensor chip 11.
１３は自由端ｌｉｅの図中上方向への変位を制限するた
めに、一方の端面から他方の端面まで凹部１３ａの形成
された台座であり、その材質はセンサチップ１１との熱
膨張係数をあわせるためにＳ、等から成り、又、その凹
部１３ａの形成された側の表面は、半田箔１２上に配置
しており、その表面上にはセンサチップ１１の下地Ｊｉ
ｌｌａと同様の下地層が形成されている。又、そｐ側面
は側壁１０ｃ、１０ｄに接している。そして、その台座
１３の上面にも半田箔１２ａを全面に配置する。１４は
自由端ｌｉｅの図中下方向への変位を制限すべくストッ
パーであり、平板がくの字型に折れ曲がった形をしてお
り、その下面は切欠き部１０ａの下壁１０ｅ上に、又、
小台座１０ｂに接゛するように配置している。そのスト
ッパー１４は例えばコバール等から成りその上面にはＮ
１−ＡＵメッキ等の下地層１４ａが施され、その上に半
田箔１２ｂを配置する。Reference numeral 13 denotes a pedestal in which a recess 13a is formed from one end face to the other end face in order to limit the upward displacement of the free end lie, and its material is made to match the coefficient of thermal expansion with that of the sensor chip 11. The surface on which the concave portion 13a is formed is placed on the solder foil 12, and the base material JI of the sensor chip 11 is placed on the surface of the solder foil 12.
A base layer similar to lla is formed. Further, the rear side is in contact with the side walls 10c and 10d. The solder foil 12a is also placed on the entire upper surface of the pedestal 13. Reference numeral 14 denotes a stopper to limit the downward displacement of the free end lie in the figure, and the stopper has a flat plate bent in a dogleg shape, and its lower surface is placed on the lower wall 10e of the notch 10a, and ,
It is arranged so as to be in contact with the small pedestal 10b. The stopper 14 is made of Kovar, for example, and has an N
1-A base layer 14a such as AU plating is applied, and a solder foil 12b is placed thereon.
１５は台座１３を搭載すべく基板であり、半導体式加速
度センサが例えば金属キャップと金属ベースとから成る
パッケージ内に入れられる場合にはその金属ベースがこ
れに相当する。基板１５には基板固定用のボール１５ａ
及びセンサチップ固定用のボール１５ｂ接続されており
、そのボール１５ａを治具１０にあけられた穴１０ｆに
挿入する事により基板１５を固定している。尚、この基
板１５の表面上で台座１５及びストッパー１４の接着面
と相対する領域にも下地層が形成されている。Reference numeral 15 denotes a substrate on which the pedestal 13 is mounted, and when the semiconductor acceleration sensor is placed in a package consisting of, for example, a metal cap and a metal base, this corresponds to the metal base. The board 15 has balls 15a for fixing the board.
and a ball 15b for fixing the sensor chip are connected, and the board 15 is fixed by inserting the ball 15a into a hole 10f made in the jig 10. Note that a base layer is also formed on the surface of the substrate 15 in a region facing the adhesive surfaces of the pedestal 15 and the stopper 14.
そして、この状態にて治具１０を１８０°反転する。こ
こで、治具１０を反転すると、センサチップ１１、台座
１３、基板１５にはそれらの自重がかかり、適当な圧力
がかかる。そこで、水素炉中にて熱を加え、半田をリフ
ローする事によってセンサチップエ１、台座１３、基板
１５間、及びストッパー１４、基板１５間の接続を行う
。第３図は接着後の状態を示す斜視図であり、図におい
て、第１図と同一構成要素には同一符号を付している。Then, in this state, the jig 10 is turned over by 180 degrees. Here, when the jig 10 is reversed, the sensor chip 11, the pedestal 13, and the substrate 15 are subjected to their own weight, and an appropriate pressure is applied. Therefore, connections are made between the sensor chip 1, the pedestal 13, and the substrate 15, and between the stopper 14 and the substrate 15 by applying heat in a hydrogen furnace and reflowing the solder. FIG. 3 is a perspective view showing the state after adhesion, and in the figure, the same components as in FIG. 1 are given the same reference numerals.
そこで本実施例によると、各々の間の半田付けが一度に
行なわれるので工程が簡略化して、その仔細コストとな
る。又、半田のりフローは一度だけであるので、接着強
度が低下する事がなくなる。Therefore, according to this embodiment, since the soldering between each part is performed at the same time, the process is simplified and the cost is reduced. Furthermore, since the solder paste flows only once, there is no decrease in adhesive strength.
又、治具を反転させた後に半田をリフローしているので
、上述したように各々の間には適当な圧力が加わり、圧
力のかかりすぎによるセンサチップ１１の破損といった
ような不具合を避ける事ができる。In addition, since the solder is reflowed after the jig is reversed, appropriate pressure is applied between each as described above, and problems such as damage to the sensor chip 11 due to excessive pressure can be avoided. can.
尚、本発明は上記実施例に限定される事なく、その主旨
を逸脱しない限り例えば以下に示す如く種々変形可能で
ある。It should be noted that the present invention is not limited to the above embodiments, and can be modified in various ways, for example as shown below, without departing from the spirit thereof.
（１）上記実施例では、治具１０を反転させているが、
この工程は必ずしも必要ではない。しかしながら、治具
１０を反転させない場合には例えば上°記の実施例にお
いて、半田箔１２ａにおける高さの微妙な調整が必要で
あり、その高さを治具１０の上面の高さと同等にするか
、適当な圧力が基板１５から加えられるように、わずか
に高くすればよい。(1) In the above embodiment, the jig 10 is inverted, but
This step is not always necessary. However, if the jig 10 is not inverted, for example in the above embodiment, it is necessary to delicately adjust the height of the solder foil 12a, and make the height equal to the height of the top surface of the jig 10. Alternatively, the pressure may be slightly increased so that an appropriate pressure is applied from the substrate 15.
（２）上記実施例では、各々の間の接着手段として半田
を用いているが、その手段は樹脂等から成る他の接着剤
でもよい。この場合には接着剤は熱を加える事により熱
硬化するわけであるが、同時に複数個所の熱硬化を行う
ことにより、熱ストレスによる劣化を免れえる。(2) In the above embodiment, solder is used as a bonding means between each, but the means may be other adhesives made of resin or the like. In this case, the adhesive is thermally cured by applying heat, but by simultaneously thermally curing multiple locations, deterioration due to thermal stress can be avoided.
（３）上記実施例では、ストッパー１４と基板１５との
間の接着も同時に行っている為に、治具１０に形成され
る切欠き部１０ａは一つの支点に接する二表面に渡って
形成されており、その内に手合１１０ｂを設け、段差を
付ける事によりセンサチップ１１等とストッパー１４と
の高さを調整しているが、ストッパー１４のない構成に
おいては、単に一つの表面をくぼました凹部を形成すれ
ばよい。尚、本発明のいう凹部とは上記実施例からもわ
かるように、複数の表面をくぼまして構成してもよい。(3) In the above embodiment, since the stopper 14 and the substrate 15 are bonded at the same time, the notch 10a formed in the jig 10 is formed across two surfaces that contact one fulcrum. The height of the sensor chip 11, etc. and the stopper 14 is adjusted by providing a step 110b and adding a step, but in a configuration without the stopper 14, there is simply a concave depression in one surface. All you have to do is form. Incidentally, as can be seen from the above embodiments, the recessed portion referred to in the present invention may be formed by recessing a plurality of surfaces.
（４）上記実施例では、自由端ｌｉｅに接着する負荷と
して半田層１１ｂを形成しているが、他のコバール、ガ
ラス等より成る負荷を接着剤、半田等により接着するも
のを使用してもよい。この場合、上記の（１）のように
治具１０を反転させなければよいが、上記実施例のよう
に反転させる場合には、熱を加えた際に負荷が落ちない
ように、負荷との接着は接着剤で行うか、或いは接着手
段として融点の高いものを使用する。(4) In the above embodiment, the solder layer 11b is formed as a load to be bonded to the free end lie, but it is also possible to use a load made of other Kovar, glass, etc. to be bonded with adhesive, solder, etc. good. In this case, it is not necessary to invert the jig 10 as in (1) above, but if it is inverted as in the above embodiment, the Adhesion is carried out with an adhesive, or a material with a high melting point is used as the adhesion means.
以上述べたように、本発明によると、センサチップ、台
座、基板間の接着を同時に行えるので組付は工程の工程
数を低減でき、その分コストを低下させる事ができる。As described above, according to the present invention, since the sensor chip, the pedestal, and the substrate can be bonded at the same time, the number of assembly steps can be reduced, and the cost can be reduced accordingly.
又、熱を加える回数を低減できるので接着部の強度を確
保できるという効果がある。Furthermore, since the number of times heat is applied can be reduced, the strength of the bonded portion can be ensured.
第１図は本発明の一実施例を説明する為の 斜視図、第
２図は従来の方法を説明する為の側面図、第３図は第１
図を用いて説明した実施例の接着後の状態を示す斜視図
である。
１０・・・治具、１０ａ・・・切欠き部、１１・・・セ
ンサチップ、１２．１２ａ、１２ｂ・・・半田箔、１３
・・・台座、１５・・・基板。Fig. 1 is a perspective view for explaining one embodiment of the present invention, Fig. 2 is a side view for explaining a conventional method, and Fig. 3 is a perspective view for explaining an embodiment of the present invention.
FIG. 3 is a perspective view showing the state of the embodiment described with reference to the drawings after adhesion. DESCRIPTION OF SYMBOLS 10... Jig, 10a... Notch, 11... Sensor chip, 12.12a, 12b... Solder foil, 13
... pedestal, 15... board.
Claims (3)
が上を向くようにしてセンサチップを挿設し、前記凹部
内で該センサチップの上部に第１の接着手段を介して台
座を搭載し、該台座の接着面に平行な面で前記治具の凹
部の形成された側の表面上に、前記台座を搭載すべく基
板を、該台座との間に第２の接着手段を介して固定し、
そして、加熱する事により前記基板、前記台座及び前記
センサチップの接着を同時に行う事を特徴とする半導体
式加速度センサの組付け方法。(1) A sensor chip is inserted into the recess of a jig in which the recess is formed, with its adhesive surface facing upward, and the first adhesive is attached to the upper part of the sensor chip within the recess. A pedestal is mounted on the pedestal, and a substrate is mounted on the surface of the jig on the side where the recess is formed in a plane parallel to the adhesive surface of the pedestal, and a second adhesive is placed between the substrate and the pedestal. fixed through means;
A method for assembling a semiconductor acceleration sensor, characterized in that the substrate, the pedestal, and the sensor chip are simultaneously bonded by heating.
求の範囲第１項記載の半導体式加速度センサの組付け方
法。(2) The method for assembling a semiconductor acceleration sensor according to claim 1, wherein the heating is performed after inverting the jig.
である特許請求の範囲第１項又は第２項に記載の半導体
加速度センサの組付け方法。(3) The method of assembling a semiconductor acceleration sensor according to claim 1 or 2, wherein the first adhesive means and the second adhesive means are solder.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61262557A JPS63116473A (en) | 1986-11-04 | 1986-11-04 | Method for assembling semiconductor acceleration sensor |
| DE8787113466T DE3780242T2 (en) | 1986-09-22 | 1987-09-15 | SEMICONDUCTOR ACCELEROMETER. |
| EP19910112458 EP0456285A3 (en) | 1986-09-22 | 1987-09-15 | Semiconductor accelerometer |
| EP87113466A EP0261555B1 (en) | 1986-09-22 | 1987-09-15 | Semiconductor accelerometer |
| EP19910112438 EP0454190A3 (en) | 1986-09-22 | 1987-09-15 | Semiconductor accelerometer |
| US07/098,050 US4829822A (en) | 1986-09-22 | 1987-09-17 | Semiconductor accelerometer |
| KR1019870010447A KR900005635B1 (en) | 1986-09-22 | 1987-09-21 | Semiconductor accelerometer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61262557A JPS63116473A (en) | 1986-11-04 | 1986-11-04 | Method for assembling semiconductor acceleration sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63116473A true JPS63116473A (en) | 1988-05-20 |
Family
ID=17377462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61262557A Pending JPS63116473A (en) | 1986-09-22 | 1986-11-04 | Method for assembling semiconductor acceleration sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63116473A (en) |
-
1986
- 1986-11-04 JP JP61262557A patent/JPS63116473A/en active Pending
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