JPS63114256A - Color image sensor - Google Patents
Color image sensorInfo
- Publication number
- JPS63114256A JPS63114256A JP61260256A JP26025686A JPS63114256A JP S63114256 A JPS63114256 A JP S63114256A JP 61260256 A JP61260256 A JP 61260256A JP 26025686 A JP26025686 A JP 26025686A JP S63114256 A JPS63114256 A JP S63114256A
- Authority
- JP
- Japan
- Prior art keywords
- color filter
- image sensor
- interlayer insulating
- insulating film
- color image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011229 interlayer Substances 0.000 claims abstract description 11
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 abstract description 16
- 239000010409 thin film Substances 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 abstract description 2
- 238000001259 photo etching Methods 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 abstract 2
- 230000005693 optoelectronics Effects 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はカラーイメージセンサに閃するものである。[Detailed description of the invention] [Industrial application field] The present invention applies to color image sensors.
一次元密行イメージセンナは、原イ５と同一サイズのセ
ンナ長を持つので光学縮小系を必要とぜず、ファクシミ
リやイメージスキャナの小型化、低価格化に大きく寄与
する。このため、近年その開発が活発化しており、第１
６回内体素子コンフ２レンス論文集（１０８４）Ｐ、５
５６に示すように、光電変換素子と、これを駆動する走
査回路とを同一の石英基板上に集積化した密行イメージ
センサが開発・実用化されている。Since the one-dimensional dense image sensor has the same sensor length as the original image sensor 5, it does not require an optical reduction system and greatly contributes to miniaturization and cost reduction of facsimiles and image scanners. For this reason, its development has become active in recent years, and the first
Collection of 6 Intrabody Elements Conference 2 Papers (1084) P, 5
As shown in 56, a dense image sensor in which a photoelectric conversion element and a scanning circuit for driving the same are integrated on the same quartz substrate has been developed and put into practical use.
この密着イメージセンナの光電変換素子面にカラーフィ
ルタを形成してフルカラー化を行う場合、従来は第３図
に示すように、光電変換素子５と層間絶縁膜２との間に
カラーフィルタ３を形成する方法が考案されていた。When producing full color by forming a color filter on the photoelectric conversion element surface of this contact image sensor, conventionally, as shown in FIG. 3, a color filter 3 is formed between the photoelectric conversion element 5 and the interlayer insulating film 2. A method was devised to do so.
第３図に示すカラーフィルタの膜厚は０．５〜１．８μ
ｍ（色により異なる）、下部電極の膜厚は０．１２μｍ
、光電変換素子５の膜厚は１．２μｍである。即ち第２
図に示す上部電極６はカラーフィルタ３と光電変換素子
５による１、９〜３．２μｍの段差をカバーする必要が
ある。１゜９〜３．２μｍの段差は半導体プロセス中の
段差としてはかなり大きく、第２図の構造を用いると、
」一部電極０は段差部で断線する確率が高くなる。とい
う問題点を有していた。The film thickness of the color filter shown in Figure 3 is 0.5 to 1.8μ.
m (varies depending on color), lower electrode film thickness is 0.12 μm
, the film thickness of the photoelectric conversion element 5 is 1.2 μm. That is, the second
The upper electrode 6 shown in the figure needs to cover a step difference of 1.9 to 3.2 μm between the color filter 3 and the photoelectric conversion element 5. A step difference of 1°9 to 3.2 μm is quite large for a step difference during semiconductor processing, and if the structure shown in Fig. 2 is used,
”There is a high probability that some electrodes 0 will be disconnected at the step portion. There was a problem.
本発明は以上の問題点を解決するもので、その目的は上
部電極６０カバーする段差を平担化し、１部電極の断線
を防止することにある。The present invention is intended to solve the above-mentioned problems, and its purpose is to flatten the step covering the upper electrode 60 and prevent a portion of the electrode from being disconnected.
（問題点を解決するための手段〕
本発明のカラーイメージセンサは、透明絶縁基板１１に
光電変換素子５とそれを駆動する走査回路とを集積化し
たカラーイメージセンサにおいて、層間絶縁膜２に間口
部を設け、該開口部にカラーフィルタ３を形成したこと
を特徴とする。(Means for Solving the Problems) The color image sensor of the present invention is a color image sensor in which a photoelectric conversion element 5 and a scanning circuit for driving it are integrated on a transparent insulating substrate 11. The present invention is characterized in that a color filter 3 is formed in the opening.
（実施例〕
第１図に本発明のカラーイメージセンサの実施例を示す
。１が透明絶縁基板、２が層間絶縁膜、３がカラーフィ
ルタ、４が下部電極、５が光電変換素子、６が上部電極
、７が駆動回路を構成する薄膜トランジスタ（Ｔ＠Ｆ−
Ｔ）であり、第１図〜第３図では簡単のためＴ・Ｆ＠Ｔ
を代表して１個だけ描いである。(Embodiment) Fig. 1 shows an embodiment of the color image sensor of the present invention. 1 is a transparent insulating substrate, 2 is an interlayer insulating film, 3 is a color filter, 4 is a lower electrode, 5 is a photoelectric conversion element, and 6 is a The upper electrode and 7 are thin film transistors (T@F-
T), and in Figures 1 to 3, T・F@T is used for simplicity.
Only one is drawn to represent.
以下、第２図で工程を追いながら説明する。The process will be explained below with reference to FIG.
ます薄膜トランジスタ７を形成後、層間ｍ縁膜２となる
ＳＩＯ，膜を減圧ＣＶＤ法で約０．８μｍ成膜し、光電
変換素子を形成する箇所に弗酸と水の混酸で７オトエツ
チして居間絶縁公開口部８を設ける（第２図−（ａｌ）
、このときの該開口部の面積は少なくともカラーフィル
タ３の面積よりも大きくなくてはならない、これは、該
開口部の面積がカラーフィルタ３０面も１よりも小さい
と、カラーフィルタ３に段差が発生し、素子面の平担化
に寄与しないためである。After forming the thin film transistor 7, an SIO film that will become the interlayer film 2 is formed to a thickness of about 0.8 μm by low pressure CVD, and the area where the photoelectric conversion element will be formed is etched with a mixed acid of hydrofluoric acid and water. Provide insulation opening 8 (Fig. 2-(al)
At this time, the area of the opening must be at least larger than the area of the color filter 3. This is because if the area of the opening is smaller than the area of the color filter 30, the color filter 3 will have a step. This is because it occurs and does not contribute to flattening the element surface.
次に、上記層間絶縁膜開口部８にカラーフィルタ３を形
成する。カラーフィルタは、本実施例ではＴ ｉ Ｏｓ
とＳｉｎ、の誘電多層膜を電子ビーム蒸着で形成するこ
とによって作った干渉フィルタである。干渉フィルタの
膜厚は色により異なるが０．５〜１．８μｍの範囲であ
る。この上に下部電極３となるＩＴＯ膜を０．２μｍス
パッタする。このＩＴＯを弗硝酸を用いて所望の大きさ
にフォトエッチし、続いてＩＴＯマスクでカラーフィル
タをＣＩＩＣＩＦ、プラズマによるドライエツチングで
パタニングする。この上に光電変換素子５となる非晶質
シリコンをプラズマＣＶＤで約１．２μｍ堆積する。こ
の非晶質シリコンをＣＦ４プラズマによるドライエツチ
ングでパタニングする（第２図−（ｂｌ）。このとき、
光電変換素子５の大きさを居間絶縁公開口部８の大きさ
と一致するようにパタニングすると、段差平担化に最も
効果がある。Next, a color filter 3 is formed in the interlayer insulating film opening 8. In this example, the color filter is T i Os
This is an interference filter made by forming dielectric multilayer films of and Sin by electron beam evaporation. The thickness of the interference filter varies depending on the color, but is in the range of 0.5 to 1.8 μm. On top of this, an ITO film that will become the lower electrode 3 is sputtered to a thickness of 0.2 μm. This ITO is photo-etched to a desired size using fluoronitric acid, and then a color filter is patterned using an ITO mask by dry etching using CIICIF and plasma. On top of this, amorphous silicon, which will become the photoelectric conversion element 5, is deposited to a thickness of about 1.2 μm by plasma CVD. This amorphous silicon is patterned by dry etching using CF4 plasma (Fig. 2-(bl). At this time,
Patterning so that the size of the photoelectric conversion element 5 matches the size of the living room insulation opening 8 is most effective in flattening the level difference.
最後に薄膜トランジスタ７の電極取出用コンタクト、１
．−ルをフォトエッチであけ、上部電極０のＡｌ−３ｉ
−Ｃｕ合金を０．７８ｍスパッタ、パタニングする（第
２図−（Ｃ））ことにより、光電変換素子５と薄膜トラ
ンジスタ７の配線とを同時に形成する。この後、能ｖＩ
素子面に保Ｆ！痕のポリイミド膜をり槓ｌてカラーイメ
ージセンサチップが完成する。Finally, the contact for taking out the electrode of the thin film transistor 7, 1
．． - Open the upper electrode 0 by photoetching the Al-3i
By sputtering and patterning -Cu alloy by 0.78 m (FIG. 2-(C)), the photoelectric conversion element 5 and the wiring of the thin film transistor 7 are simultaneously formed. After this, Noh vI
Keep F on the element surface! The remaining polyimide film is removed to complete the color image sensor chip.
以上のような工程で作成したカラーイメージセンサによ
れば、上部電極６の光電変換素子６上での段差が従来例
（第３図）では１．９〜３．２μｍであったのに対し、
同じ場所での上部電極の段差が１．１〜２．４μｍに低
減された。このため、」：配設差部で上部電極６が断線
する割合は従来例に比較して５０％以上減少した。According to the color image sensor produced through the above steps, the step difference between the upper electrode 6 and the photoelectric conversion element 6 was 1.9 to 3.2 μm in the conventional example (FIG. 3);
The height difference of the upper electrode at the same location was reduced to 1.1 to 2.4 μm. Therefore, the rate of disconnection of the upper electrode 6 at the disposed portion was reduced by more than 50% compared to the conventional example.
本発明のカラーイメージセ／すによれば、従来光電変換
素子の段差部で発生する確率が高かった上部電極の断線
率を、従来に比べて５０％以上減らずことができる。こ
のため、本発明はカラーイメージセンサの信頼性、歩留
りの向上、並びにコスト低減に多大の効果をイ「する。According to the color image cell of the present invention, the disconnection rate of the upper electrode, which conventionally had a high probability of occurring at the stepped portion of a photoelectric conversion element, can be reduced by more than 50% compared to the conventional method. Therefore, the present invention has great effects in improving the reliability and yield of color image sensors and reducing costs.
第１図は本発明のカラーイメージセンサの断面図。
第２図１１１〜ＩｃＩは本発明のカラーイメージセンサ
の製造工程図。
第３図は従来のカラーイメージセンサの断面り１゜
１・・・透明絶縁基板
２・・・層間絶縁膜
３・・・カラーフィルタ
４・・・下部電極
５・・・光電変換素子
６・・・上部電極
７・・・薄厚トランジスタ
以 上
出願人 セイコーエプソン株式会社
代理人 弁理士 最 上 務 他１名Ｊ、ＩＱｔ独
第１図
□ Ｉ Ａｐａ彫縛１ｖｌａ４ｔ）ｌ＞
第２図
第３図FIG. 1 is a sectional view of a color image sensor of the present invention. FIG. 2 111 to IcI are manufacturing process diagrams of the color image sensor of the present invention. Figure 3 shows a cross section of a conventional color image sensor with a cross section of 1°1...transparent insulating substrate 2...interlayer insulating film 3...color filter 4...lower electrode 5...photoelectric conversion element 6...・Top electrode 7... Thin thickness transistor or above Applicant Seiko Epson Co., Ltd. Agent Patent attorney Tsutomu Mogami and 1 other person
Figure 2 Figure 3
Claims (2)
する走査回路とを集積化したカラーイメージセンサにお
いて、層間絶縁膜２に開口部を設け、該開口部にカラー
フィルタ３を形成したことを特徴とするカラーイメージ
センサ。(1) In a color image sensor in which a photoelectric conversion element 5 and a scanning circuit for driving it are integrated on a transparent insulating substrate 1, an opening is provided in the interlayer insulating film 2, and a color filter 3 is formed in the opening. A color image sensor characterized by:
フィルタ３の面積よりも大きいことを特徴とする特許請
求の範囲第１項記載のカラーイメージセンサ。(2) The color image sensor according to claim 1, wherein the area of the interlayer insulating film opening 8 is larger than the area of the color filter 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61260256A JPS63114256A (en) | 1986-10-31 | 1986-10-31 | Color image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61260256A JPS63114256A (en) | 1986-10-31 | 1986-10-31 | Color image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63114256A true JPS63114256A (en) | 1988-05-19 |
Family
ID=17345520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61260256A Pending JPS63114256A (en) | 1986-10-31 | 1986-10-31 | Color image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63114256A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140346452A1 (en) * | 2013-05-21 | 2014-11-27 | Samsung Display Co., Ltd. | Organic light-emitting display apparatus and method of manufacturing the same |
-
1986
- 1986-10-31 JP JP61260256A patent/JPS63114256A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140346452A1 (en) * | 2013-05-21 | 2014-11-27 | Samsung Display Co., Ltd. | Organic light-emitting display apparatus and method of manufacturing the same |
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