JPS63114221A - Method and apparatus for removing semiconductor element from glass substrate - Google Patents
Method and apparatus for removing semiconductor element from glass substrateInfo
- Publication number
- JPS63114221A JPS63114221A JP25993186A JP25993186A JPS63114221A JP S63114221 A JPS63114221 A JP S63114221A JP 25993186 A JP25993186 A JP 25993186A JP 25993186 A JP25993186 A JP 25993186A JP S63114221 A JPS63114221 A JP S63114221A
- Authority
- JP
- Japan
- Prior art keywords
- glass substrate
- solder
- semiconductor element
- ici
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 title claims abstract description 58
- 239000000758 substrate Substances 0.000 title claims abstract description 55
- 239000004065 semiconductor Substances 0.000 title claims description 21
- 238000000034 method Methods 0.000 title claims description 6
- 229910000679 solder Inorganic materials 0.000 claims abstract description 30
- 238000001816 cooling Methods 0.000 claims abstract description 7
- 238000002844 melting Methods 0.000 claims abstract description 7
- 230000008018 melting Effects 0.000 claims abstract description 7
- 239000000155 melt Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims 2
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 8
- 230000002950 deficient Effects 0.000 abstract description 7
- 230000006866 deterioration Effects 0.000 abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 239000000696 magnetic material Substances 0.000 abstract description 6
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000009965 tatting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、液晶表示板、プラズマディスプレー等、透
明ガラス基板上に、半導体素子をフェースダウンで多数
実装する際、不良半導体の取外し方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for removing defective semiconductors when a large number of semiconductor elements are mounted face-down on a transparent glass substrate such as a liquid crystal display board or a plasma display.
液晶表示板に半導体素子（以下ｒｃと略す）を多数個実
装する際、接続不良や故障等が製造中で生ずる事がある
。このような場合には、不具合のＩＣを取外し、良品の
ＩＣと取替えなくてはならない。不具合のＩＣを取外し
た時、ガラス基板上に残存するはんだの量が一定でない
と、良品のＩＣを取替えた際、接合不良を起こす。本発
明は、不具合のＩＣを取外した際、残存するはんだの量
を一定にする為、ガラス基板を冷却し、不具合のＩＣを
、放電アーク光による光ビームで加熱する事により、Ｉ
Ｃのフェース面のはんだがン容融すると同時に、ＩＣ背
面に付加された引離し力でＩＣがガラス基板から取外さ
れる。When mounting a large number of semiconductor elements (hereinafter abbreviated as rc) on a liquid crystal display board, connection failures, failures, etc. may occur during manufacturing. In such a case, the defective IC must be removed and replaced with a good IC. If the amount of solder remaining on the glass substrate is not constant when a defective IC is removed, a bonding failure will occur when a good IC is replaced. The present invention cools the glass substrate and heats the defective IC with a light beam generated by discharge arc light in order to maintain a constant amount of solder remaining when the defective IC is removed.
At the same time as the solder on the face of the IC melts, the IC is removed from the glass substrate by a pulling force applied to the back of the IC.
従来は、ガラス基板５を予熱板１２で予熱し、ＩＣ１の
背面に真空吸引具１１を付加し、ＩＣＩを常に冷却しな
がら引離す力を付加して、赤外線ランプ１３でガラス基
板５の裏面を加熱し、はんだ２ａを溶融させ、ＩＣＩを
取外していた。Conventionally, the glass substrate 5 is preheated with a preheating plate 12, a vacuum suction tool 11 is added to the back of the IC 1, a force is applied to separate the ICI while constantly cooling it, and the back surface of the glass substrate 5 is heated with an infrared lamp 13. The ICI was removed by heating and melting the solder 2a.
従来の方法では、溶融がはんだ２８部で発生し、ガラス
基板５のパターン８上にはんだ２ａが少量残存する。新
しい良品の［Ｃ１を前記はんだ２ａ上に位置合せし、加
熱によりはんだ２ａと新しいはんだ２を接合せしめる。In the conventional method, melting occurs at the solder 28 portion, and a small amount of solder 2a remains on the pattern 8 of the glass substrate 5. A new good product [C1] is positioned on the solder 2a, and the solder 2a and the new solder 2 are bonded by heating.
液晶表示板等に用いられるガラス基板５上に設置するパ
ターン８は一般に数μｍ以下と薄いので、ＩＣＩの取外
し、再接合時にはんだ２ａの拡散が進行し、パターン８
が劣化する不具合を生ずる。また、予熱板１２でガラス
基板５全体を予熱し、取外すべきＩＣ１部分のガラス基
板５を局部的に加熱するため、液晶表示板では液晶の劣
化やガラス基板５が割れるという不具合もあった。The pattern 8 installed on the glass substrate 5 used for liquid crystal display boards etc. is generally thin, several micrometers or less, so when the ICI is removed and rejoined, the solder 2a spreads and the pattern 8
This causes problems such as deterioration. Further, since the entire glass substrate 5 is preheated by the preheating plate 12 and the glass substrate 5 of the IC 1 portion to be removed is locally heated, there are also problems in the liquid crystal display board such as deterioration of the liquid crystal and breakage of the glass substrate 5.
ｃ問題点を解決するための手段〕
本発明は前記問題点を解決するため、不具合のＩＣＩを
取外す際、はんだ２ｂ部を溶融させ、ＩＣ１を取外すよ
うにするため、ＩＣＩの背面に磁性材料３を固着し、外
部から磁力を与え、ＩＣＩを常にガラス基板５から引離
す方向に力を加えた状態で、ガラス基板５の裏面を冷却
エアー１４で冷却しながら、放電アーク光６の光ビーム
をガラス基板５を透過させて照射し、ＩＣＩのフェース
面をはんだ２の融点以上に加熱し、はんだ２ｂ部が溶融
した時、ＩＣＩを取外す事ができるようにした。Means for Solving Problem c] In order to solve the above problem, the present invention provides a magnetic material 3 on the back side of the ICI in order to melt the solder 2b and remove the IC 1 when removing the defective ICI. is fixed, a magnetic force is applied from the outside, and a force is always applied in the direction of separating the ICI from the glass substrate 5. While cooling the back surface of the glass substrate 5 with cooling air 14, a light beam of discharge arc light 6 is emitted. The ICI was irradiated through the glass substrate 5 to heat the face of the ICI to a temperature higher than the melting point of the solder 2, and when the solder 2b was melted, the ICI could be removed.
上記のように構成したため、ガラス基板５及びパターン
８が加熱されず、ＩＣＩのみ加熱されるため、ＴＣＩの
はんだ２ｂから）８融、引離されるため取外し、再取付
によるパターン８の劣化がなくなり、ガラス基板５を加
熱する事がないので液晶の劣化やガラス基板５が割れる
という不具合がなくなる。また、パターン８に残存する
はんだは、はんだ量、はんだ貰さとも揃うので、新しい
ＩＣを再取付ける際に不具合を生ずる事がない。With the above configuration, the glass substrate 5 and the pattern 8 are not heated, and only the ICI is heated, so that the pattern 8 does not deteriorate when removed and reattached because it is melted and separated from the solder 2b of the TCI. Since the glass substrate 5 is not heated, problems such as deterioration of the liquid crystal and breakage of the glass substrate 5 are eliminated. In addition, since the amount of solder remaining in pattern 8 and the amount of solder are the same, there will be no problem when reattaching a new IC.
以下に、本発明の実施例を図面に基づいて説明する。第
１図は本発明のガラス基板上の半導体素子の取外し方法
を示す断面略図で、第２図は従来の半導体素子の取外し
方法を示す断面略図である。Embodiments of the present invention will be described below based on the drawings. FIG. 1 is a schematic cross-sectional view showing a method for removing a semiconductor element on a glass substrate according to the present invention, and FIG. 2 is a schematic cross-sectional view showing a conventional method for removing a semiconductor element.
取外すべきＩＣＩは、はんだ２によりガラス基板５のパ
ターン８と接合している。前記■Ｃ１の背面に接着剤９
が付いた磁性材料３を貼付ける。The ICI to be removed is bonded to the pattern 8 of the glass substrate 5 by solder 2. Adhesive 9 on the back of the above ■C1
Attach the magnetic material 3 with the mark.
これは、磁性材料３の粉体を接着剤９に分散された磁性
塗料をＩＣＩの背面に塗布しても良い、基板受台１０に
永久磁石４もしくは電磁石をセットし、常に磁界を与え
ておき、基板受台１０上に、磁性材料３を付けたＩＣｉ
を永久磁石４と対向させて、ガラス基板５をセントする
。放電アーク光６の焦点を前記ＩＣＩのフェース面に合
せ、ガラス基板５のパターン８の裏側から冷却エアー１
４を当て、ガラス基板５を冷却しながら、放電アーク光
６のシャッター１５を開くと、放電アーク光６はシャッ
ター１５の下の遮光マスク７′′によりＩＣＩのフェー
ス面に照射され、照射された放電アーク光６は、ガラス
基板５が透明であるため３ｙｉ３？ｒし、ＩＣＩのフェ
ース面に吸収、加熱され、ＩＣＩの温度が上昇する。こ
の時、ＩＣＩをガラス基板５から引離す力を磁力により
行なうので、ＩＣＩを冷却する事がないので、ＩＣＩの
温度上昇が速い。はんだ２ａ部はガラス基板５で冷却さ
れ、はんだ２ｂ部はＴＣｌで加熱される。ＩＣＩの温度
が上昇し、はんだの融点に達すると、ＴＣＩはばんだ２
ｂ部から硼力により引離され、ＩＣＩがガラス基板５か
ら取外される。尚、加熱源として放電アーク光６のほか
に、赤外線ランプ１３も使用する事ができるが、赤外線
ランプ１３の場合は、放電アーク光６よりガラス基板５
の熱吸収が高く、ガラ子基板５が加熱されるので、透明
ガラス基板５を使用する液晶パネル等では放電アーク光
６の方が、ガラス基板５を加熱しないので良い。This can be done by applying a magnetic paint in which powder of magnetic material 3 is dispersed in adhesive 9 to the back of the ICI.A permanent magnet 4 or an electromagnet is set on the board holder 10, and a magnetic field is constantly applied. , ICi with magnetic material 3 attached on board holder 10
The glass substrate 5 is placed so as to face the permanent magnet 4. The discharge arc light 6 is focused on the face of the ICI, and cooling air 1 is supplied from the back side of the pattern 8 on the glass substrate 5.
When the shutter 15 of the discharge arc light 6 is opened while cooling the glass substrate 5, the discharge arc light 6 is irradiated onto the face of the ICI by the light-shielding mask 7'' under the shutter 15. Since the glass substrate 5 is transparent, the discharge arc light 6 is 3yi3? r, is absorbed and heated by the face of the ICI, and the temperature of the ICI rises. At this time, since the force for separating the ICI from the glass substrate 5 is applied by magnetic force, the ICI is not cooled, so the temperature of the ICI increases quickly. The solder 2a portion is cooled by the glass substrate 5, and the solder 2b portion is heated by TCl. When the temperature of the ICI increases and reaches the melting point of the solder, the TCI becomes the solder 2.
It is pulled away from part b by force, and the ICI is removed from the glass substrate 5. In addition to the discharge arc light 6, an infrared lamp 13 can also be used as a heating source; however, in the case of the infrared lamp 13, the glass substrate 5
Since the heat absorption is high and the glass substrate 5 is heated, the discharge arc light 6 is better for liquid crystal panels etc. that use the transparent glass substrate 5 because it does not heat the glass substrate 5.
この発明は以上説明したように、ガラス基板５を加熱す
る事なく、ＩｃＩのみ加熱し、ＴＣＩを取外すので、ガ
ラス基数５上に設置したパターン８を劣化させる事なく
ＩＣＩを取外す事ができ、ガラス割れを発生させない
。As explained above, this invention heats only the IcI without heating the glass substrate 5 and removes the TCI, so the ICI can be removed without deteriorating the pattern 8 installed on the glass base 5. Does not cause cracks.
第１図は、本発明のガラス基板上の半導体素子の取外し
装置の断面を示す略図で、第２図は、従来装置の取外し
方法の断面を示す略図である。
１ ・ ・ ・ Ｉ Ｃ
２・・・はんだ
３・・・磁性材料
４・・・永久磁石
５・・・ガラス基（反
６・・・放電アーク光
７・・・遮光マスク
８・・・パターン
９・・・接着剤
１０・・・基板受台
１１・・・真空吸引具
１２・・・予熱板
１３・・・赤外線ランプ
以上
出願人 セイコー電子工業株式会社
７７″ウス胴丸Ｅの牛譚ｒ木禾子の取′１タトし装置の
許面図第１図
従来に直ハ陪面図
第２図FIG. 1 is a schematic diagram showing a cross section of an apparatus for removing semiconductor elements on a glass substrate according to the present invention, and FIG. 2 is a schematic diagram showing a cross section of a conventional method for removing semiconductor elements on a glass substrate. 1 ・ ・ ・ I C 2... Solder 3... Magnetic material 4... Permanent magnet 5... Glass base (anti-6... Discharge arc light 7... Light-shielding mask 8... Pattern 9 ... Adhesive 10 ... Board holder 11 ... Vacuum suction tool 12 ... Preheating plate 13 ... Infrared lamp and above Applicant Seiko Electronics Co., Ltd. Figure 1 Perspective view of the child handle 1 Tatting device Figure 2
Claims (2)
ーンを設置し、当該金属パターン上に半導体素子をはん
だによって接合せしめた後、このガラス基板から当該半
導体素子を取外す方法において、取外すべき半導体素子
を、常にガラス基板から引離す方向に力を付加した状態
で、前記半導体素子部分に位置するガラス基板の裏側を
冷却しながら、光エネルギーを当該半導体素子の取付位
置に対応するガラス基板の裏側から照射し、ガラス基板
を透過した光エネルギーが、半導体素子の能動面をはん
だの溶融温度以上に加熱し、はんだが溶けると同時に、
ガラス基板から当該半導体素子を取外す事を特徴とした
ガラス基板上の半導体素子の取外し方法。(1) In the method of removing the semiconductor element from the glass substrate after installing a metal pattern to be joined with solder on the front side of the glass substrate and joining the semiconductor element on the metal pattern with solder, the semiconductor element to be removed is While applying force in the direction of separating the glass substrate from the glass substrate, while cooling the back side of the glass substrate located at the semiconductor element part, light energy is applied from the back side of the glass substrate corresponding to the mounting position of the semiconductor element. The light energy that is irradiated and transmitted through the glass substrate heats the active surface of the semiconductor element above the melting temperature of the solder, and at the same time the solder melts.
A method for removing a semiconductor element on a glass substrate, the method comprising removing the semiconductor element from the glass substrate.
接合せしめた後、このガラス基板から当該半導体素子を
取外す装置において、取外すべき半導体素子をガラス基
板から引離す方向の引っ張りを付加する引き剥がし装置
と、ガラス基板を冷却する装置と、ガラス基板の裏から
光エネルギーを照射し、ガラス基板の表側に接合された
半導体素子の能動面をはんだの溶融温度以上に加熱する
装置とから構成されている事を特徴とする半導体素子の
取外し装置。(2) A device for removing a semiconductor device from a glass substrate after bonding a semiconductor device to the front side of a glass substrate with solder includes a peeling device that applies a pull in a direction to separate the semiconductor device to be removed from the glass substrate. It consists of a device that cools the glass substrate, and a device that irradiates light energy from the back side of the glass substrate and heats the active surface of the semiconductor element bonded to the front side of the glass substrate to a temperature higher than the melting temperature of the solder. A semiconductor device removal device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25993186A JPS63114221A (en) | 1986-10-31 | 1986-10-31 | Method and apparatus for removing semiconductor element from glass substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25993186A JPS63114221A (en) | 1986-10-31 | 1986-10-31 | Method and apparatus for removing semiconductor element from glass substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63114221A true JPS63114221A (en) | 1988-05-19 |
Family
ID=17340915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25993186A Pending JPS63114221A (en) | 1986-10-31 | 1986-10-31 | Method and apparatus for removing semiconductor element from glass substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63114221A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5553766A (en) * | 1994-11-21 | 1996-09-10 | International Business Machines Corporation | In-situ device removal for multi-chip modules |
| US5556024A (en) * | 1994-09-29 | 1996-09-17 | International Business Machines Corporation | Apparatus and method for removing known good die using hot shear process |
-
1986
- 1986-10-31 JP JP25993186A patent/JPS63114221A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5556024A (en) * | 1994-09-29 | 1996-09-17 | International Business Machines Corporation | Apparatus and method for removing known good die using hot shear process |
| US5636781A (en) * | 1994-09-29 | 1997-06-10 | International Business Machines Corporation | Apparatus and method for removing known good die using hot shear process |
| US5707000A (en) * | 1994-09-29 | 1998-01-13 | International Business Machines Corporation | Apparatus and method for removing known good die using hot shear process |
| US5738267A (en) * | 1994-09-29 | 1998-04-14 | International Business Machines Corporation | Apparatus and method for removing known good die using hot shear process |
| US5961026A (en) * | 1994-09-29 | 1999-10-05 | International Business Machines Corporation | Apparatus and method for removing known good die using hot shear process |
| US5553766A (en) * | 1994-11-21 | 1996-09-10 | International Business Machines Corporation | In-situ device removal for multi-chip modules |
| US5779133A (en) * | 1994-11-21 | 1998-07-14 | International Business Machines Corporation | In-situ device removal for multi-chip modules |
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