JPS63112745U - - Google Patents
Info
- Publication number
- JPS63112745U JPS63112745U JP350187U JP350187U JPS63112745U JP S63112745 U JPS63112745 U JP S63112745U JP 350187 U JP350187 U JP 350187U JP 350187 U JP350187 U JP 350187U JP S63112745 U JPS63112745 U JP S63112745U
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- generation chamber
- plasma generation
- chamber
- sample stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005192 partition Methods 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Description
第１図Ａは、本考案の一実施例の縦断面図、Ｂ
はその―線断面図、第２図、第３図は、本考
案の他の実施例の縦断面図である。
１，１１，５１……第１プラズマ生成室、２…
…第２プラズマ生成室、３……試料台、４……高
周波コイル、５……永久磁石、６……高周波電源
、２０……マイクロ波導波管、２１……コイル（
磁石）、３０……多孔電極、３１……内側電極、
４１……カソード、４２……タングステンフイラ
メント、４３……アークの正電極、４４……直流
磁場コイル。
FIG. 1A is a vertical cross-sectional view of an embodiment of the present invention, and FIG.
2 and 3 are longitudinal sectional views of other embodiments of the present invention. 1, 11, 51...first plasma generation chamber, 2...
...Second plasma generation chamber, 3...Sample stage, 4...High frequency coil, 5...Permanent magnet, 6...High frequency power supply, 20...Microwave waveguide, 21...Coil (
magnet), 30... porous electrode, 31... inner electrode,
41... cathode, 42... tungsten filament, 43... arc positive electrode, 44... DC magnetic field coil.
Claims (1)
試料台を備えたプラズマ装置において、第１プラ
ズマ生成室と第２プラズマ生成室のあいだに多孔
電極による隔壁を設け、第１プラズマ生成室の電
子を、前記多孔電極の孔を通して、第２プラズマ
生成室に注入し、ガスを電離することで第２プラ
ズマ生成室のプラズマを生成するとともに、前記
の試料台に、交流または直流のバイアス電源を接
続したことを特徴とするプラズマ装置。 a first plasma generation chamber and a second plasma generation chamber;
In a plasma apparatus equipped with a sample stage, a partition wall with a porous electrode is provided between a first plasma generation chamber and a second plasma generation chamber, and electrons from the first plasma generation chamber are passed through the holes of the porous electrode to generate a second plasma. A plasma apparatus characterized in that plasma in a second plasma generation chamber is generated by injecting gas into the chamber and ionizing the gas, and an alternating current or direct current bias power source is connected to the sample stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP350187U JPS63112745U (en) | 1987-01-16 | 1987-01-16 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP350187U JPS63112745U (en) | 1987-01-16 | 1987-01-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63112745U true JPS63112745U (en) | 1988-07-20 |
Family
ID=30783315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP350187U Pending JPS63112745U (en) | 1987-01-16 | 1987-01-16 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63112745U (en) |
-
1987
- 1987-01-16 JP JP350187U patent/JPS63112745U/ja active Pending
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